• The Korean Journal of Ceramics
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• v.4 no.3
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• pp.222-226
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• 1998

$Cu_3N$ film deposited on silicon oxide substrate by r.f. reactive sputtering technique. Synthesis and properties of copper nitride film were investigated for its possible application to Cu metallization as adhesive interlayer between copper and $SiO_2. Cu_3N$ film was synthesized at the substrate temperature ranging from $100^{\circ}C$ to $200^{\circ}C$ and at nitrogen gas ratio above $X_{N2}=0.4. Cu_3N, CuN_x$, and FGM-structured $Cu/CuN_x$ films prepared in this work passed Scotch-tape test and showed improved adhesion property to silicon oxide substrate compared with Cu film. Electrical resistivity of copper nitride film had a dependency on its lattice constant and was ranged from 10-7 to 10-1 $\Omega$cm. Copper nitride film was, however, unstable when it was annealed at the temperature above $400^{\circ}C$.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1234-1235
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• 2006

Considering the idea that some properties, especially the mechanical properties of $Ni_3Al$ at ambient temperature can be improved by adding of some substitutional/interstitial elements, our goal was to obtain these materials starting from mechano-composites powders. In this aim, using mechanical alloying techniques three type of mechano-composite powders starting from elemental powders were obtained. Then, by reactive sintering in argon atmosphere at temperature over $900^{\circ}C$, alloyed $Ni_3Al$ materials were realized. This paper presents our research results regarding the microstructural aspects and phase formation in obtained materials.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.339-342
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• 1997

The optical properties of WO$_3$thin films deposited by RF magnetron reactive sputtering were studied. The substrate was an ITO(indium-tin-oxide) glass(100$\Omega$/ ). The optical properties are examined by different deposition conditions. RF power, substrate temperature, $O_2$concentraction. Ar flow rate, working pressure and thickness are 40~60W, 25~30$0^{\circ}C$, 10%, 54~72sccm, 5~20m7orr and 1200~2400$\AA$, respectively. All these films were colorless, light yellow and found to be amorphous in structure by X-ray diffraction analysis. When RF power, substrate temperature, $O_2$concentraction, Ar flow rate, working pressure and thickness are 40W, $25^{\circ}C$, 10%, 72sccm, 20mTorr and 2400$\AA$, respectively the values of transmittance of the WO$_3$thin films in visible region are about 80%.

• Journal of Surface Science and Engineering
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• v.29 no.5
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• pp.330-337
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• 1996

A rf reactive sputter deposition technique was adopted to deposit ferroelectric lead zirconate titanate (PZT) thin films with high rate from a ZrTi alloy target combined with PbO pellets. Deposition characterisitics including the effects of PbO are ratio were discussed. A new deposition mode called the quasi-metallic mode was observed. Perovskite PZT films were prepared at a growth temperature as low as$ 450^{\circ}C$. However, because the target structure is unstable, weproposed a mixture target consisted of Zr, Ti and PbO. Fundamental experiments were investigated using the powder target. Perovskite PZT film could be obtained at $450^{\circ}C$ with better electrical properties also.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.173-176
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• 1997

The III-V nitride semiconductor InN thin films which have the direct bandgap in visible light wavelength region have been deposited on Si(100) substrates and AIN/Si(100) substrates by rf reactive sputtering. InN thin films have been investigated on the structural, and electrical properties according to the sputtering parameters such as total pressure, rf power, and substrate temperature. It is found that optimal conditions required for fabricating InN thin films with high crystal Quality, low carrier concentration, high Hall mobility are total pressure 5mTorr, rf power 60W, substrate temperature 6$0^{\circ}C$ . InN thin films deposited on the AIN(60min.)/Si(100) substrates arid AIN(120min.)/Si(100) substrates showed remarkably high crystal quality and electrical properties. It is known that AIN buffer layer is to decrease free energy at interface between InN film and Si substrate, and then promoting lateral growth of InN films.

• Journal of the Korean Vacuum Society
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• v.9 no.1
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• pp.42-47
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• 2000

The amorphous vanadium oxide thin films for thin-film rechargeable lithium batteries were fabricated by r.f. reactive sputtering at room temperature. As the experimental parameter, oxygen partial pressure was varied during sputtering. At high oxygen partial pressures(>30%), the as-deposited films, constant current charge/discharge characteristics were carried out in 1M $LiPF_6$, EC:DMC+1:1 liquid electrolyte using lithium metal as anode. The specific capacity of amorphous $V_2O_5$ after 200cycles of operation at room temperature was higher compared to crystalline $V_2O_5$. The amorphous vanadium oxide thin film and crystalline film showed about 60$\mu$Ah/$\textrm{cm}^2\mu\textrm{m}$ and about 38$\mu$Ah/$\textrm{cm}^2\mu\textrm{m}$, respectively. These results suggest that the battery capacity of the thin film vanadium oxide cathode strongly depends on the crystallinity.

• Textile Coloration and Finishing
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• v.19 no.3
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• pp.18-25
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• 2007

The fixing behaviors of anthraquinone disperse dyes containing dimethylamino substituent, such as C. I. Disperse Violet 26(D.V.26) and C. I. Disperse Blue 14(D.V.14), or containing diamino substituent, such as C. I. Disperse Blue 73(D.B.73), and monochlorotriazinyl azo reactive dyes, such as C. I. Reactive Orange 13(R.O.13), C. I. Reactive Red 3(R.R.3). C. I. Reactive Yellow 2(R.Y.2) on polyester/cotton blend(P/C) fabrics were examined for the one-step printing of P/C fabrics. The high temperature steaming of $175^{\circ}C$ is the most satisfactory fixing method for P/C one-step printing with above disperse and reactive dyes among the four different fixing methods: $175^{\circ}C$ steaming, $102^{\circ}C$ steaming${\rightarrow}175^{\circ}C$ steaming, $190^{\circ}C$ thermosol, $102^{\circ}C$ steaming${\rightarrow}190^{\circ}C$ thermosol. $190^{\circ}C$ thermosol is unfit to fix R.R.3 and R.Y.2 whose heat stability is poor. It was found that D.V.26 and D.B.14 containing dimethylamino substituent are unstable for heat and alkali, but D.B.73 is stable for them to print P/C blend fabrics with R.O.13 which is also stable for heat. Therefore we found that D.B.73, R.O.13 and a pair of D.B.73 and R.O.13 were very suitable for one-step printing of P/C blend fabrics.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.109-110
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• 2006

In bio applications, high temperature coefficient of resistance (TCR) at $30^{\circ}C{\sim}40^{\circ}C$ is especially important for a temperature sensor. In this work, single phase-vanadium dioxide ($VO_2$) thin films for temperature sensor were fabricated by reactive DC magnetron sputtering and post-annealing method. VOx thin films deposited by reactive sputtering in a controlled $Ar/O_2$ atmosphere can be transformed into single phase-$VO_2$ films by post-annealing in $N_2$ atmosphere. The grown $VO_2$ thin films have a moderate resistance at room temperature and very high TCR at room temperature and transition temperature, respectively 2.88%/K and 15.8%/K. A detailed structural characterization is performed by SEM, XRD and RBS. SEM morphology image indicates that grains of fabricated $VO_2$films are homogeneous and ball-like in shape. A fact that the films contain only single phase-$VO_2$ is obtained by XRD and RBS analysis. After deposition, the sensors were fabricated by micromachining technology. Silicon nitride membrane and black nickel were used for a thermal isolation structure and absorption layer. In the vicinity of room temperature, the TCR of sensors was enough high to apply for bio sensors.

• The Korean Journal of Rheology
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• v.1 no.1
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• pp.12-19
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• 1989

Polymer fluid flow and polymerization reaction occur simultaneously during the reactive polymer processing. The viscosity and physical properties change as thereaction proceeds and the crystallization and vitrifica-tion occur as the T,,,and the Tg of the polymerizing fluid exceeds the reaction temperature within the mold.

• Journal of Korea Foundry Society
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• v.17 no.1
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• pp.58-66
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• 1997

The main aim of the present study is to investigate the effects of several processing parameters on the characteristics of Fe-Al alloy preform manufactured by reactive sintering process. The processing parameters include preform composition of 25, 40, 50, 60 and 75at.%Al, compacting pressure of 10, 20 and $30kg/cm^2$, and mean Al particle size of 29, 66 and $187{\mu}m$. Mean Fe particle size was $39{\mu}m$. The density of preform processed under same compacting pressure was not affected by changing Al composition. The preform with Al compositions of 25, 40, 50 and 60at.% Al swelled after reactive sintering process, thus having lower density than the green compacts. The preform with Al compositions of 75at.%Al, however, shrinked after reactive sintering process, thus having higher density than the green compacts. Ignition temperature increased with increasing compacting pressure, and increased with increasing Al composition at the fixed compacting pressure. And adiabatic temperature decreased with increasing compacting pressure at the fixed Al composition, and increased with increasing Al composition at the fixed compacting pressure. The size of compound particles increased with increasing Al composition. Especially, The size of compound particles increased largely in the case of 75at.%Al. It was observed that 50at.%Al preform have three dimentional network structure having a homogeneous and fine decreasing Al particle size.