• 제목/요약/키워드: temperature photoluminescence spectrum

검색결과 127건 처리시간 0.037초

저온 photoluminescence 스펙트럼 및 형광체 합성에 관한 연구 (A Study on Phosphor Synthetic and Low Temperature Photoluminescence Spectrum)

  • 김수용
    • 조명전기설비학회논문지
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    • 제24권4호
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    • pp.10-16
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    • 2010
  • 본 논문에서는 ZnO와 $Ga_2O_3$ 분말을 1 : 1의 mole비로 혼합하고 여기에 Mn을 첨가하여 Ar 주입 상태와 진공 상태에서 조성된 $ZnGa_2O_4$ : Mn을 합성하였다. 제작된 $ZnGa_2O_4$ : Mn의 발광 스펙트럼 관찰을 하여 산소의 성분 변화가 발광 특성에 미치는 영향을 설명하였다. 또한 저온의 Photoluminescence(PL) 스펙트럼으로부터 Mn의 site symmetry가 발광 스펙트럼에 미치는 영향을 설명하였다.

캐스팅법으로 제작한 Poly(3-hexylthiophene)의 흡수스펙트럼에 따른 형광 특성 (Characteristics of Electronic Absorption Spectrum and Photoluminescence in Cast-Poly(3-hexylthiophene) Films)

  • 김주승;구할본;조재철
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1998년도 추계학술대회 논문집
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    • pp.57-60
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    • 1998
  • Poly(3-hexylthiophene)(P3HT) was synthesized by use of FeCl$_3$ as a oxidizing agent at $25^{\circ}C$. The infrared spectrum of our polymer gave good evidence for the conjugation of 3-hexylthiophene monomer unit. P3HT contains the HT(head-to-tail) linkage larger than 64% based on NMR analysis. Electronic absorption and photoluminescence studies show that cast films of P3HT have three exciting state. Absorption spectrum was separated with three maximum peaks by Giese-French method and shifted to the shorter wavelength with increasing temperature. Separated absorption spectrum of P3HT is well adapted to PL peak appeared at longer wavelength. Low temperature PL spectrum is well separated at 669nm, 733nm and 812nm.

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ZnGa2O4:Mn 형광체 합성 및 발광 특성에 관한 연구 (A study on luminescence a specific character and ZnGa2O4:Mn phosphor synthetic)

  • 김수용;지석근
    • 한국정보통신학회:학술대회논문집
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    • 한국해양정보통신학회 2009년도 춘계학술대회
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    • pp.703-708
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    • 2009
  • 본 논문에서는 ZnO와 $Ga_2O_3$ 분말을 1:1의 mole비로 혼합하고 여기에 Mn을 첨가하여 Ar이나 진공 분위기에서 $ZnGa_2O_4$ : Mn을 합성하였다. 제작된 $ZnGa_2O_4$ : Mn의 발광 스펙트럼, 표면 사진 및 성분비를 측정하여 산소의 성분 변화가 발광 특성에 미치는 영향을 규명하고자 하였다. 또한 저온의 Photoluminescence(PL) 스펙트럼으로부터 Mn의 site symmetry가 발광 스펙트럼에 미치는 영향을 설명하였다.

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Temperature Driven Phase Transition of Organic-Inorganic Halide Perovskite Single Crystals

  • Byun, Hye Ryung;Kim, Hyo In;Byun, Su Jeong;Park, Dae Young;Jeong, Mun Seok;Byeon, Clare Chisu
    • Journal of the Korean Physical Society
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    • 제73권11호
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    • pp.1729-1734
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    • 2018
  • Organic-inorganic halide perovskite single crystals undergo phase transition of being cubic, tetragonal, or orthorhombic depending on the temperature. We investigated the $CH_3NH_3PbBr_{3-x}I_x$ single crystals grown by the inverse temperature crystallization method with temperature-dependent UV-Vis absorption and photoluminescence. From the temperature-dependent absorption measurement, the optical band gap is extracted by derivation of absorption spectrum fitting and Tauc plot. In our results, $CH_3NH_3PbBr_{3-x}I_x$ single crystals show that an abrupt change in optical band gap, PL peak position and intensity appears around 120 K - 170 K regions, indicating the phase transition temperature.

Poly(3-hexylthiophene)의 PL 발광 메카니즘에 관한 연구 (A Study on the Mechanism of Photoluminescence in Poly(3-hexylthiophene))

  • 김주승;서부완;구할본
    • 한국전기전자재료학회논문지
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    • 제14권2호
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    • pp.133-138
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    • 2001
  • We studied the optical properties of poly(3-hexylthiophene) for applying to the emitting material of organic electro luminescent device. The infrared spectrum and NMR of synthesized polymer gave good evidence for the conjugation of 3-hexylthiophene monomer unit. We confirmed that poly(3-hexylthiophene) contains the HT(head-to-tail)-HT(head-to-Tail) linkage larger than 65% based on NMR analysis. FTIR and raman spectroscopy show that poly(3-hexylthiophene) has two main vibration levels which have an energy about 0.18eV and 0.36eV. Electronic absorption spectra shifted to the shorter wavelength with increasing temperature, which is related to a conformational transition of the polymer. Photoluminescence spectrum generated at low temperature(10K) is separated at 669nm, 733nm and 812nm that it's because of phonon energy generated from the lattice vibration.

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간편한 CdSe 나노 입자의 합성: 입자크기를 결정하는 반응온도의 효과 (Easy and Simple Synthesis of CdSe Nanocrystals: The Effect of Reaction Temperature for The Determination of Nanoparticle Size)

  • 김성진
    • 통합자연과학논문집
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    • 제2권3호
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    • pp.219-223
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    • 2009
  • Easy and simple synthesis of CdSe nanocrystals was achieved through sol-gel process. CdSe nanocrystals were synthesized from the reaction of cadmium oxide and selenium in the prescence of trioctylphosphine oxide, tributylphosphine, octadecene, octadecylamine, and stearic acid. The effect of reaction temperature for the determination of size of CdSe nanocrystals was investigated after the addition of selenium. The reaction temperature for the growth of CdSe nanocrystals was increased by every $20^{\circ}C$ from 170 to 190, 210, 230, 250, 270, and $290^{\circ}C$. When the reaction temperature was higher, the absorption wavelength in the absorption spectrum was increased which indicated that the size of CdSe nanocrystals was increased. The emission wavelength in the photoluminescence spectrum was increased from 438 to 489, 542, 591, 643, 692, and 745 nm, as the size of CdSe nanocrystals was increased. The control of the reaction temperature illustrated that the color tuning of emission wavelength were successfully obtained.

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Photoluminescence Characteristics of ZnO Nano Needle-like Rods grown by the Hot Wall Epitaxy Method

  • Eom, Sung-Hwan;Choi, Yong-Dae
    • Transactions on Electrical and Electronic Materials
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    • 제8권5호
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    • pp.191-195
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    • 2007
  • We investigated photoluminescence characteristics of ZnO nano needle-like rods grown on a c-plane $AL_2O_3$ substrate by the hot wall epitaxy method. The nano-rods were vertically well aligned along the ZnO c-axis. The diameters of the ZnO nano-rods ranged from 20 nm to 30 nm and their lengths were between 600 and 700 nm. In the photoluminescence spectrum at 10 K, the exciton emission bound to the neutral donor dominated while defect related emission was weakly observed. With a further increase of temperature, the free exciton emission appeared and eventually became dominant at room temperature.

적외선 센서 재료로 사용되는 고순도 ZnTe박막의 평가 (Evaluation of the High Purity ZnTe which is an Far-Infrared Sensor Material)

  • Kim, B.J.
    • 한국표면공학회지
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    • 제35권5호
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    • pp.305-311
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    • 2002
  • Optical measurements have been used to study the biaxial tensile strain in heteroeptaxial ZnTe epilayers on the (100) GaAs substrate by hot wall epitaxy (HWE) with Zn reservoir. It is effect on the low-temperature photoluminescence spectrum of the material. Optimum growth condition has been determined by a four-crystal rocking curve (FCRC) and a low temperature photoluminescence measurement (PL). It was found that Zn partial pressure from Zn reservoir has a strong influence on the quality of grown films. Under the determined optimum growth condition, ZnTe epitaxial films with thickness of 0.72~24.8$\mu\textrm{m}$ were grown for studying the effect of the thickness on crystalline quality. The PL and FCRC results indicated that the quality of ZnTe films becomes higher rapidly with increase of thickness up to 6$\mu\textrm{m}$. The best value of the FWHM of the four crystal rocking curve, 66 arcsec, was obtained on the film with 12$\mu\textrm{m}$ in thickness. The PL spectrum shows the splitted strong free exciton emissions and very weak deep band emissions. These results show the high quality of films.

단결정 MnF2(1.5% EuF3)의 Photoluminescence (Photoluminescence of the Single Crystal MnF2(1.5% EuF3))

  • 권순혁;남균;김철구
    • 한국자기학회지
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    • 제17권1호
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    • pp.1-5
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    • 2007
  • Rutile 구조를 가진 반강자성체 $MnF_2$와 단결정 $MnF_2(1.5%\;EuF_3)$의 Infra-Red 흡수 스펙트럼과 Photoluminescence 측정을 했다. 측정된 Data의 분석을 통해서 $EuF_3$가 1.5% 첨가된 $MnF_2$와 순수한 $MnF_2$의 광학적 성질의 차이를 밝혀내고, Eu의 첨가에 의해 나오는 PL은 $Eu^{3+}$의 f-d 전이에 의한 것임을 확인했다.

Point-defect study from low-temperature photoluminescence of ZnSe layers through the post-annealing in various ambient

  • Lee, Sang-Youl;Hong, Kwang-Joon;Kim, Hae-Jeong
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2010년도 하계학술대회 논문집
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    • pp.378-378
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    • 2010
  • The ZnSe epilayers were grown on the GaAs substrate by hot wall epitaxy. After the ZnSe epilayers treated in the vacuum-, Zn-, and Se-atmosphere, respectively, the defects of the epilayer were investigated by means of the low, temperature photoluminescence measurement. The dominant peaks at 2.7988 eV and 2.7937 eV obtained from the PL spectrum of the as-grown ZnSe epilayer were found to be consistent with the upper and the lower polariton peak of the exciton, $I_2$ ($D^{\circ}$, X), bounded to the neutral donor associated with the Se-vacancy. This donor-impurity binding energy was calculated to be 25.3 meV. The exciton peak, $I_l^d$, at 2.7812 eV was confirmed to be bound to the neutral acceptor corresponded with the Zn-vacancy.

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