• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2000.04a
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• pp.179-182
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• 2000

The dynamic softening behavior of type 430 ferritic stainless steel could be characterized by the hot torsion test in the temperature range of 900-110$0^{\circ}C$ and the strain rate range of 0.05-5/sec. It is found that the continuous dynamic recrystallization (CDRX) was a major dynamic softening mechanism. The effects of process variables strain ($\varepsilon$) stain rate($\varepsilon$)and temperature (T) on CDRX could be individually established from the analysis of flow stress curves and microstructure. The effect of CDRX individually established from the analysis of flow stress curves and microstructure. The effect of CDRX increased with increasing strain rate and decreasing temperature in continuous deformation. The multipass deformation processes were performed with 10 pass deformations. The CDRX effect occurred in multipass deformatioon. The grain refinement could be achieved from multipass deformation The grain refinement increased with increasing strain rate and decreasing temperature. Also the CDRX in multipass deformation was affected by interpass time and pass strain. The total strain was to be found key parameter to occur CDRX.

• Journal of the Korean Ceramic Society
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• v.31 no.2
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• pp.206-212
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• 1994

Effects of the film deposition process parameters on the properties such as deposition rate, etch rate, refractive index, stress and step coverage of plasma enhanced chemical vapor deposited (PECVD) tetraethylorthosilicate glass (TEOS) SiO2 film were investigated and analysed using SEM, FTIR and SIMS techniques. Increasing TEOS flow or decreasing O2 flow increased the deposition rate and the compressive stress of the oxide film but produced a less denser film. The deposition rate decreased owing to the decrease in the sticking coefficient of the TEOS and the O2 molecules onto the substrate Si with increasing the substrate temperature. Increasing the substrate temperature produced a denser film with a lower etch rate and the higher refractive index by lowering SiOH and moisture contents. Increasing the rf power increases the ion bombardment energy. This increase in energy, in turn, increases the deposition rate and tends to make the film denser. No appreciable changes were found in the deposition rate but the refractive index and the stress of the film decreased with increasing the deposition pressure. The carbon content in the plasma TEOS CVD oxide film prepared under our standard deposition conditions were very low according to the SIMS analysis results.

• The Korean Journal of Ecology
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• v.19 no.3
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• pp.231-240
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• 1996

The germination responses of Cassia mimosoides var. nomame seeds to temperature were examined under various conditions. The temperature range allowing germination was $20~40^{\circ}C$, and the linear relationship between the germination rate and temperature appeared to exist between $28~38^{\circ}C$ The total thermal time required for germination (10~80%) of C. mimosoides seeds ranged from 259 Kh (degree Kelvin$\times$hours) to 421 Kh and base temperature range was relatively constant, i.e., $23.39~26.68^{\circ}C$. In the increasing temperature (IT) regime, C. mimosoides seeds started to germinate at $16^{\circ}C$ and showed greater germination rate with increasing temperatures. The final germination rate was 64% at $36^{\circ}C$. On the other hand, in the decreasing temperature (DT) regime, the seeds began to germinate at $36^{\circ}C$, and the final germination rate was 52% at $20^{\circ}C$. An induced dormancy occurred at $16^{\circ}C$ in the DT regime.

• Journal of the Semiconductor & Display Technology
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• v.12 no.4
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• pp.49-54
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• 2013

In this study, we have investigated the effect of the substrate temperature and oxygen flow rate on the characteristics of IZO thin films for the OLED (organic light emitting diodes) devices. For this purpose, IZO thin films were deposited by RF magnetron sputtering at room temperature and $300^{\circ}C$ with various $O_2$ flow rate. In order to investigate the influences of the oxygen, the flow rate of oxygen in argon mixing gas has been changed from 0.1sccm to 0.5sccm. IZO thin films deposited at room temperature show amorphous structure, whereas IZO thin films deposited at $300^{\circ}C$ show crystalline structure having an (222) preferential orientation regardless of $O_2$ flow rate. The electrical resistivity of IZO film increased with increasing flow rate of $O_2$ under Ar+$O_2$. The change of electrical resistivity with increasing flow rate of $O_2$ was mainly interpreted in terms of the charge carrier concentration rather than the charge carrier mobility. The electrical resistivity of the amorphous-IZO films deposited at R.T. was lower than that of the crystalline-IZO thin films deposited at $300^{\circ}C$. The change of electrical resistivity with increasing substrate temperature was mainly interpreted in terms of the charge carrier mobility rather than the charge carrier concentration. All the films showed the average transmittance over 85% in the visible range. The current density and the luminance of OLED devices with IZO thin films deposited at room temperature in 0.1sccm $O_2$ ambient gas are the highest amongst all other films. The optical band gap energy of IZO thin films plays a major role in OLED device performance, especially the current density and luminance.

• Journal of the Semiconductor & Display Technology
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• v.11 no.4
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• pp.25-30
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• 2012

In this study, we have investigated the effect of the substrate temperature and oxygen flow rate on the characteristics of IZO thin films for the organic light emitting diodes (OLED) devices. For this purpose, IZO thin films were deposited by RF magnetron sputtering at room temperature and $300^{\circ}C$ with various $O_2$ flow rate. In order to investigate the influences of the oxygen, the flow rate of oxygen in argon mixing gas has been changed from 0.1sccm to 0.5sccm. IZO thin films deposited at room temperature show amorphous structure, whereas IZO thin films deposited at $300^{\circ}C$ show crystalline structure having an (222) preferential orientation regardless of $O_2$ flow rate. The electrical resistivity of IZO film increased with increasing flow rate of $O_2$ under $Ar+O_2$. The change of electrical resistivity with increasing flow rate of $O_2$ was mainly interpreted in terms of the charge carrier concentration rather than the charge carrier mobility. The electrical resistivity of the amorphous-IZO films deposited at R.T. was lower than that of the crystalline-IZO thin films deposited at $300^{\circ}C$. The change of electrical resistivity with increasing substrate temperature was mainly interpreted in terms of the charge carrier mobility rather than the charge carrier concentration. All the films showed the average transmittance over 83% in the visible range.

• Journal of the Semiconductor & Display Technology
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• v.12 no.2
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• pp.33-37
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• 2013

In this study, we have investigated the effect of the substrate temperature and hydrogen flow rate on the characteristics of IZO thin films for the organic light emitting diodes (OLED) devices. For this purpose, IZO thin films were deposited by RF magnetron sputtering at room temperature and $300^{\circ}C$ with various $H_2$ flow rate. In order to investigate the influences of the oxygen, the flow rate of hydrogen in argon mixing gas has been changed from 0.1sccm to 0.9sccm. IZO thin films deposited at room temperature show amorphous structure, whereas IZO thin films deposited at $300^{\circ}C$ show crystalline structure having an (222) preferential orientation regardless of $H_2$ flow rate. The electrical resistivity of IZO film decreased with increasing flow rate of $H_2$ under Ar+$H_2$. The change of electrical resistivity with increasing flow rate of $H_2$ was mainly interpreted in terms of the charge carrier concentration rather than the charge carrier mobility. The electrical resistivity of the amorphous-IZO films deposited at R.T. was lower than that of the crystalline-IZO thin films deposited at $300^{\circ}C$. The increase of electrical resistivity with increasing substrate temperature was interpreted in terms of the decrease of the charge carrier mobility and the charge carrier concentration. All the films showed the average transmittance over 83% in the visible range.

• Journal of Environmental Science International
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• v.13 no.7
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• pp.667-674
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• 2004

The objective of this study was to investigate the effects of pH and temperature on the formation of bromate, which is ozonation by-products, during ozonation. In this experiment, the operating parameters including pH 3 ～ 10 and temperature 15 ～ $30^{\circ}C$ were studied. Through the study for the bromate formation, reaction rate constant, and ozonation effect index on pH and temperature, the results obtained are as follows. At the same initial pH condition, the increase of pH shown similar trends even if the reaction variables such as temperature and reaction time of ozonation were exchanged. As pH and temperature were increasing, the bromate concentration was increased but bromine(HOBr+OBr) was decreased with increasing pH from 3 to 10. The activation energy(J/mol) for bromate formation decreased with increasing pH. The rate constants of bromate formation for the reaction of ozone and bromide, and ozone dosage coefficient$(K_{0})$ increased with temperature and pH. Ozonation effect index(OI) decreased with increasing temperature and pH.

• Korean Journal of Pharmacognosy
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• v.42 no.1
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• pp.82-88
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• 2011

This study was carried out to investigate the optimum conditions for extraction of soluble acidic polysaccharides from ginseng marc. Method of carbazole-sulfuric acid was applied to determine the amount of acidic polysaccharides in ginseng marc. The amounts of soluble acidic polysaccharides in water extract of ginseng marc were increased with increasing extraction temperature. The contents of acidic polysaccharides were not significantly different despite the extraction time increasing from 0.5 hours to 6 hours. To estimate the rehydration rate of the freeze dried polysaccharide, the extracted acidic polysaccharide fraction powder was determined the amount of soluble acidic polysaccharides by carbazole-sulfuric acid method again. The rehydration rate of acidic polysaccharides from water-extract of red ginseng marc at room temperature was 100%. On the other hand, the rehydration rate of acidic polysaccharide of red ginseng marc at boiling temperature was about 50%. The rehydration rate of acidic polysaccharides from water-extract of white ginseng marc at room temperature was 50%. The rehydration rate of acidic polysaccharide of red ginseng marc at boiling temperature was about 40%. The rate of soluble acidic polysaccharide of Red Ginseng is higher than that of White Ginseng. We can find out the maximum extraction method of soluble acidic polysaccharide from ginseng marc.

• Proceedings of the Korean Nuclear Society Conference
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• 1996.05c
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• pp.193-198
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• 1996

The effect of dynamic strain aging (DSA) on the leak-before-break (LBB) analysis was estimated through the evaluation of leakage-size-crack and flaw stability in SA106 Gr.C piping steel. Also. the results were represented as a form of "LBB allowable load window". In the DSA temperature region. the leakage-size-crack length was smaller than that at other temperatures and it increased with increasing tensile strain rate. In the results of flaw stability analysis. the lowest instability load appeared at the temperature corresponding to minimum J- R curve which was caused by DSA. The instability load near the plant operating temperature depended on the loading rate of J-R data. and decreased with increasing tensile strain rate. These are due to the strain hardening characteristic and strain rate sensitivity of DSA. In the "LBB allowable load window". LBB allowable region was the narrowest at the temperature and loading conditions where DSA occurs.

• Transactions of Materials Processing
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• v.6 no.2
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• pp.102-109
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• 1997

The multistage deformation and stress relaxation were carried out to investigate the strain induced precipitation by torsion tests in the range of 1000~80$0^{\circ}C$, 0.05~5/sec for V-microalloyed steel. The starting temperature and time for the initiation of precipitation were determined by stress relaxation tests. The distribution of precipitates increased, as the strain rate increased and the mean size of precipitates was found to be about 10~30nm. The precipitation starting time$(P_s)$ decreased with increasing strain rate and the amount of pre-strain. The effect of deformation conditions on the no-recrystallization temperature$(T_nr)$ was also determined in the multistage deformation. $T_nr$ Tnr decreased with increasing the strain and strain rate. In the controlled rolling simulation, grain refinement and precipitation hardening effects could be achieved by the alternative large pass strain at the latter half pass stage under the condition of low temperature and high strain rate.