• 제목/요약/키워드: temperature dependance

검색결과 80건 처리시간 0.026초

Nano-composites 절연파괴강도의 온도의존성 (Temperature dependance of Dielectric strength in Nano-composites)

  • 이강원;이혁진;김종환;신종열;홍진웅
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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    • pp.256-257
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    • 2008
  • Recently, with the increase of demand of electricity, electric cable or electric transfer machine are rapidly developed and meet the demand with the extra high voltage and massive capacity, the dangers of electrical accident of insulator are increasing by the electric stress, insulation degradation and insulation breakdown in insulator. In this paper, it is investigated that the temperature dependance of dielectric strength in nano-composites. We obtained that breakdown voltage of 0.4 [wt%] specimens is higher than the other $SiO_2$ content.

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Bi계 은시스산화물초전도테프의 쿠엔치전파특성의 온도의존성 (Temperature Dependance of Propagation Velocity in a Silver Sheathed Bi-family Superconducting Oxid Tape)

  • 김석범;아오끼게스케;이시야마아쯔시
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1994년도 하계학술대회 논문집 A
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    • pp.76-78
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    • 1994
  • Owing to the discover of oxide superconducting over critical temperature100K, it is being made experimentally somewhere under the possibility that there is superconducting magnet by cooling liquid nitrogen. The issues of thermal stability and quench process of Low-Tc superconductor has been studied and used application of oxide superconducting magnets. However the quench propagation property of oxide superconductor, especially experimental data about thermal behavior has not been reported yet. Therefore we measured the effect of temperature dependance of quench propagation velocity, Vq, by using the short samples made up of silver sheathed Bismuth-family (2223phase) superconducting oxide tape.

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ITO 박막의 공정변수에 따른 특성 연구 (Dependance of the Process Parameters on the Characteristic of the ITO Thin Films)

  • 김소라;서정은;김상호
    • 한국표면공학회지
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    • 제37권3호
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    • pp.158-163
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    • 2004
  • ITO thin film was deposited on the glass by RF magnetron sputtering. Dependance of the process parameters such as thickness, target-to-substrate distance, substrate temperature and oxygen partial pressure on the transmittance and electrical resistance of ITO film were investigated. The deposition conditions for getting better optical and electrical ITO characteristics were the 1800-$2300\AA$ thickness, 65mm substrate-to-target distance, $350^{\circ}C$ substrate temperature and 8% oxygen partial pressure. At these conditions, the transmittance and sheet resistance of the ITO film were 83.3% and 77.86Ω/$\square$, respectively.

FeCoB계 아몰퍼스 자성박막의 인덕턴스의 주파수 의존성 (Frequency Dependance of Inductance of FeCoB Amorphous Magnetic Films)

  • 신용진;소대화;김현욱;서강수;임재근
    • 한국전기전자재료학회논문지
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    • 제11권5호
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    • pp.413-417
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    • 1998
  • In this paper, we investigate frequency dependance of inductance of FeCoB amorphous magnetic films. $(Fe_{1-x}Co_x)_{79}Si_2B_{19}$ was used as the basic composition of amorphous magnetic film having near zero magnetostriction. The amorphous magnetic films were fabricated with x=0.94 and x=0.95 by using sputtering method at high frequency. The films were anneald under non-magnetic field and near crystallization temperatures(30min at $280^{\circ}C$, 30min and 1hr at $400^{\circ}C$, respectively). As the results of the experiments with the fabricated films, the lowest coercive force was 0.084[Oe] at 400[W] of the input power and the crystallization temperature was $360^{\circ}C$ . In the case 30min at 40$0^{\circ}C$ the inductance value in the low frequency with x=0.95 was higher by 488% than that with x=0.94. The quality factor Q was below 0.7 for all samples. We obtained the highest quality value at 400[KHz] with 30min at $280^{\circ}C$ and x=0.94. The value was about 0.62. Also, the quality factor value was about 0.35 at 1[MHz] with 30min at $280^{\circ}C$ and x=0.95.

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A17075합금의 고온 크리프 활성화에너지의 상태의존성 (State Dependence of Activation Energies for High Temperature Creep of A17075 Alloy)

  • 조용이;김희송
    • 대한기계학회논문집
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    • 제17권1호
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    • pp.131-140
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    • 1993
  • 본 연구에서는 A17075의 활성화에너지의 각 변수 의존성을 온도 보상시간과 Zener-Hollomon 개변수를 써러 조사하고 가장 신빙성이 있는 Miller에 의한 현상론적 크리프식을 조사 연구하였다.

트랜스콘덕터 기반 추아회로의 온도변화에 따른 카오스 다이내믹스 (Chaotic Dynamics of a Tansconductor-based Chua's Circuit According to Temperature Variation)

  • 신봉조;송한정
    • 한국전기전자재료학회논문지
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    • 제25권9호
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    • pp.686-691
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    • 2012
  • In this paper, we designed a Chua's chaotic circuit using transcondcutor based nonlinear resistor. Proposed chaotic circuit consist of L, C, R and transcondcutor based Chua's diode. We performed SPICE simulation for chaotic dynamics such as time seriesform, frequency analysis and phase plane of the circuit. Chaotic dynamics of the circuit was analysed according to MOS size variation of the operational transconductance amplifier. Also, we performed SPICE circuit analysis for temperature dependance of the circuit. SPICE results showed that chaotic dynamics of the circuit varied according to the temperature variation and chaotic signals were generated in specific temperature conditions.