• Fire Science and Engineering
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• v.21 no.4
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• pp.25-31
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• 2007

The combustion characteristics and combustion heat of sandwich panel cores were analysed using variable external irradiation level. The characteristics such as ignition time, critical heat flux, ignition temperature and surface temperature profile were measured. Fuel samples were exposed to incident heat fluxes from 15 to $50\;kW/m^2$. For the measurement of various combustion characteristics, the size of specimen was $100\;mm\;{\times}\;100\;mm\;{\times}\;50\;mm$ and the samples were 3 different kinds. As results, Type B showed the best characteristics in measurement of combustion heat and ignition temperature and Type C showd the best characteristics in critical heat flux and surface temperature profile than that of the other two. In conclusion, we knew that Type C had the best performance in fire safety from all data of this study.

• Membrane Journal
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• v.15 no.4
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• pp.349-354
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• 2005

YSZ (yttria-stabilized zirconia) determined with an electrolyte that analyzed thermal stability along sintering condition and an electric characteristic. As sintering temperature increases by SEM, grain grows and it showed that pore decreases relatively. and confirmed effect by grain size. It evaluated that particle internal resistance and electric performance by resistance in an electrolyte and electricity conductivity measurement through ac impedance measurement in temperature of $800\~1000^{\circ}C$ in 2-probe method In order to recognize an electric characteristic. In dry process and wet process, density was each 6.13, 6.25 $g/cm^3$ and the relative density was each 98, 99$\%$ when sintering condition is $1400^{\circ}C$.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2016.10a
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• pp.527-530
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• 2016

This paper presents curvature-compensated reference circuits operating under low-voltage condition and achieving low-power consumption with $0.35-{\mu}m$ standard CMOS process. The proposed circuit can operate under less than 1-V supply voltage by using MOS transistors operating in weak-inversion region. The simulation results shows a low temperature coefficient by using the proposed curvature compensation technique. It generates a graph-shape temperature characteristic that looks like a sine curve, not a bell-shape characteristic presented in other published BGRs without curvature compensation. The proposed circuits operate with 0.9-V supply voltage. First, the voltage reference circuit consumes 176nW power and the temperature coefficient is $26.4ppm/^{\circ}C$. The current reference circuit is designed to operate with 194.3nW power consumption and $13.3ppm/^{\circ}C$ temperature coefficient.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.49 no.5
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• pp.437-446
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• 2021

As flying vehicle's speed is getting faster, the magnitude of aerodynamic heating is getting bigger. High-speed vehicle's exterior skin is heated to hundreds of degrees, and electrical equipments inside the vehicle are heated, simultaneously. Since allowable temperature of electrical equipments is low, they are vulnerable to effect of aerodynamic heating. These days, lots of techniques are applied to estimate temperature of electrical equipments in flight condition, and to make them thermally safe from heating during flight. In this paper, new model building technique for thermal safety analysis is introduced. To understand internal thermal transient characteristic of electrical equipment, simple heating experiment was held. From the result of experiment, we used our new building technique to build thermal analysis model which reflects thermal transient characteristic of original equipment. This model can provide internal temperature differences of electrical equipment and temperature change of specific unit which is thermally most vulnerable part in the equipment. So, engineers are provided much more detailed thermal analysis data for thermal safety of electrical equipment through this technique.

• Journal of the Korean Vacuum Society
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• v.7 no.s1
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• pp.57-77
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• 1998

Heteroepitaxial $Y_2O_3$ films were grown on a Si(111) substrate by ionized cluster beam deposition(ICBD) in ultra high vacuum, and its qualities such as crystllitnity, film stress, and morphological characteristics were investigated using the various measurement methods. The crystallinity was investigated by x-ray diffraction (XRD) and reflection high energy electron diffraction (RHEED). Interface crystallinity was also examined by Rutherford backscattering spectroscopy(RBS) channeling, transmission electron microscopy(TEM). The stress of the films was measured by RBS channeling and XRD. Surface and interface morphological characteristics were investigated by atomic force microscopy (AFM) and x-ray scattering method. Comparing the interface with the surface characteristics, we can conclude that many defects at the interface region were generated by interface reaction between the yttrium metal and SiO2 layer and by ion beam characteristic such as shallow implantation, so that they influenced the film qualities. The film quality was dominantly depended on the characteristic temperature range. In the temperature range from $500^{\circ}C$ to $600^{\circ}C$, the crystallinity was mainly improved and the surface roughness was drastically decreased. On the other hand, in the temperature range from $600^{\circ}C$ to $700^{\circ}C$, the compressive stress and film density were dominantly increased, and the island size was more decreased. Also the surface morphological shape was transformed from elliptical shape to triangular. The film stress existed dominantly at the interface region due to the defects generation.

• Proceedings of the Korea Institute of Fire Science and Engineering Conference
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• 2005.05a
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• pp.255-260
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• 2005

• Proceedings of the Optical Society of Korea Conference
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• 2009.02a
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• pp.517-518
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• 2009

• Proceedings of the KWS Conference
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• 2006.10a
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• pp.262-264
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• 2006

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2008.06a
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• pp.791-792
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• 2008

• Proceedings of the KIEE Conference
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• 1985.07a
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• pp.189-190
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• 1985