• Korean Journal of Food Science and Technology
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• v.46 no.2
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• pp.256-261
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• 2014

This study was conducted to determine the effect of gamma-ray and electron-beam irradiation on dried spices (black pepper, red pepper, parsley, and basil) using the photostimulated luminescence (PSL), thermoluminescence (TL) and electron spin resonance (ESR) methods. The spices were irradiated at 0, 1, 5, and 10 kGy. All non-irradiated spices had photon counts (PCs) less than 700 PCs. The PCs of three irradiated spices (red pepper, parsley, and basil) were clearly distinguishable from those of non-irradiated ones, exhibiting PSL signals higher than 5000 PCs. However, negative PSL counts (<700 PCs) were obtained for most irradiated black pepper, except those irradiated with 5 kGy gamma rays and 10 kGy electron-beams. TL glow curves of the irradiated spices showed a higher peak at $150-250^{\circ}C$. TL ratios were found to be less than 0.1 for non-irradiated spices and higher than 0.1 for irradiated ones. No ESR signal was observed for any irradiated spice except red pepper, which displayed cellulose-based ESR spectra. Therefore, the results suggest that the PSL, TL, and ESR methods are effective detection techniques for dried spices irradiated with electron beams as well as gamma rays.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.107-108
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• 2008

The spectacular development of AMLCDs, been made possible by a-Si:H technology, still faces two major drawbacks due to the intrinsic structure of a-Si:H, namely a low mobility and most important a shift of the transfer characteristics of the TFTs when submitted to bias stress. This has lead to strong research in the crystallization of a-Si:H films by laser and furnace annealing to produce polycrystalline silicon TFTs. While these devices show improved mobility and stability, they suffer from uniformity over large areas and increased cost. In the last decade we have focused on microcrystalline silicon (${\mu}c$-Si:H) for bottom gate TFTs, which can hopefully meet all the requirements for mass production of large area AMOLED displays [1,2]. In this presentation we will focus on the transfer of a deposition process based on the use of $SiF_4$-Ar-$H_2$ mixtures from a small area research laboratory reactor into an industrial gen 1 AKT reactor. We will first discuss on the optimization of the process conditions leading to fully crystallized films without any amorphous incubation layer, suitable for bottom gate TFTS, as well as on the use of plasma diagnostics to increase the deposition rate up to 0.5 nm/s [3]. The use of silicon nanocrystals appears as an elegant way to circumvent the opposite requirements of a high deposition rate and a fully crystallized interface [4]. The optimized process conditions are transferred to large area substrates in an industrial environment, on which some process adjustment was required to reproduce the material properties achieved in the laboratory scale reactor. For optimized process conditions, the homogeneity of the optical and electronic properties of the ${\mu}c$-Si:H films deposited on $300{\times}400\;mm$ substrates was checked by a set of complementary techniques. Spectroscopic ellipsometry, Raman spectroscopy, dark conductivity, time resolved microwave conductivity and hydrogen evolution measurements allowed demonstrating an excellent homogeneity in the structure and transport properties of the films. On the basis of these results, optimized process conditions were applied to TFTs, for which both bottom gate and top gate structures were studied aiming to achieve characteristics suitable for driving AMOLED displays. Results on the homogeneity of the TFT characteristics over the large area substrates and stability will be presented, as well as their application as a backplane for an AMOLED display.