• The Journal of Korean Academy of Prosthodontics
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• v.43 no.6
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• pp.727-735
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• 2005

Statement of problem. Platform switching in implant prosthesis has been used for esthetic and biological purpose. But there are few reports for this concept. Purpose. The purpose of this study is evaluation of platform switching in wide implant by three dimensional finite element analysis. Materials and Methods. The single implant and prosthesis was modeled in accordance with the geometric designs for Osstem implant system. Three-dimensional finite element models were developed for (1) a wide diameter 3i type titanium implant 5 mm in diameter, 13 mm in length with wide cemented abutment, titanium alloy abutment screw, and prosthesis (2) a wide diameter 3i type titanium implant 5 mm in diameter, 13 mm in length with regular cemented abutment, titanium alloy abutment screw and prosthesis(platform switching) was made for finite element analysis. The abutment screws were subjected to a tightening torque of 30 Ncm. The amount of preload was hypothesized to 650N, and round and flat type prostheses were loaded to 200 N. Four loading offset point (0, 2, 4, 6 mm from the center of the implants) were evaluated. Models were processed by the software programs HyperMesh and ANSA. The PAM-CRASH 2G simulation software was used for analysis of stress. The PAM-VIEW and HyperView were used for post processing. Results. The results from experiment were as follows; 1. von Mises stress value is increased in order of bone, abutment, implant and abutment screw. 2. von Mises stress of abutment screw is lower when platform switching. 3. von Mises stress of implant is lower when platform switching until loading offset 4 mm. 4. von Mises stress of abutment is similar between each other. 5. von Mises stress of bone is slightly higher when platform switching. Conclusion. The von Mises stress pattern of implant components is favor when platform switch ing but slightly higher in bone stress distribution than use of wide abutment. The research about stress distribution is essential for investigation of the cortical bone loss.

• Journal of the Korean Magnetics Society
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• v.21 no.6
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• pp.193-197
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• 2011

The thickness dependence of the magnetic switching volumes in electrodeposited CoPt films was investigated from the magnetization reversal and the magnetic interaction behavior. As the sample thickness is increased, the field difference between the wall pinning field ($H_{DW}$) and the nucleation field ($H_N$) as well as the absolute value of ${\Delta}$area are increased. Therefore, the decrement tendency of the switching diameter with increasing sample thickness can be well explained by the domain wall motion controlled by the domain wall pinning and the strength of dipolar interaction.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.24 no.3
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• pp.459-466
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• 2000

Flow characteristics of turbulent elliptic jets were experimentally investigated using a single-frame PIV system. A sharp-edged elliptic nozzle with aspect ratio(AR) of 2 was tested and the experimental results were compared with those of circular jet having the same equivalent diameter($D_e$). The Reynolds number based on the nozzle exit velocity and nozzle equivalent diameter was about $1{\times}10^4$. The spreading rate along the major and minor axis are different remarkably. The jet half width along the major axis decreases at first and then increases with going downstream. But along the minor axis the jet width increases steadily. The elliptic jet of AR=2 has one switching points at $X/D_e=2$ within the near field. Turbulence properties are also found to be significantly different along the major and minor axis planes.

• The Transactions of the Korean Institute of Electrical Engineers B
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• v.52 no.7
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• pp.315-319
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• 2003

We improved quench properties of a superconducting fault current limiter (SFCL) based on YBCO thin films by their serial and parallel combinations. The SFCL consisted of 6 switching elements fabricated of 4 inch-diameter YBCO thin films. The quench currents of the switching elements were distributed between 33.9 A and 35.6 A. Simple serial connection resulted in imbalanced power dissipation between switching elements even at the quench current difference of 0.6 A. On the other hand, $2{\times}2$ and $3{\times}2$ stack combinations produced simultaneous quenches. The $3{\times}2$ stack combination showed better simultaneous quench behavior than the $2{\times}2$ stacks. This is suggested to be because the currents between switching elements in parallel connection of the $3{\times}2$ stacks were more effectively redistributed than the $2{\times}2$ stacks.

• Journal of the Korean Magnetics Society
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• v.10 no.5
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• pp.232-236
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• 2000

CoSm thin films with a Cr underlayer have received continuous attention as a potential material for a high density longitudinal magnetic recording media. In this study the Ax gas sputtering pressure effects on the magnetic properties of CoSm thin films, which were fabricated by using a dc magnetron sputtering machine, were investigated. The magnetic switching volume is especially important parameter to understand the thermal stability of the written information, magnetization reversal process and media noise. Therefore, in this paper the effects of sputtering pressure on the magnetic switching volume of CoSm thin films grown on Cr underlayer with the same sputtering conditions was studied. As the Ar sputtering pressure during sputtering of the CoSm magnetic layer increases from 5 to 30 mTorr, the measured switching volumes decreased from 9.0 to 5.2$\times$10$^{-18}$ cm$^3$. The calculated diameter of switching unit from V＊ was less than 22 nm, which satisfies the Sharrock's requirement on the thermal stability of the high density longitudinal magnetic recording media.

• The Journal of the Korean dental association
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• v.53 no.9
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• pp.644-655
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• 2015

Purpose: This study was conducted to evaluate the effect of the fixture abutment connection type and diameter on the screw joint stability in external butt joint for 2nd surgery and internal cone connected type implant system for 1st and 2nd surgery using ultimate fracture strength. Materials and Methods: USII system, SSII system and GSII system of Osstem Implant were used. Each system used the fixture with two different diameters and cement-retained abutments, and tungsten carbide / carbon coated abutment screws were used. Disc shaped stainless steel metal tube was attached using resin-based temporary cement. The experimental group was divided into seven subgroups, including the platform switching shaped specimen that uses a regular abutment in the fixture with a wide diameter in USII system. A static load was increased to the metal tube at 5mm deviated point from the implant central axis until it reached the compression bending strength at a rate of 1mm/min. Then the deformations and patterns of fracture in threaded connection were compared. Results and Conclusion: 1. In the comparison between the Regular diameter, compression bending strength of SSII system was higher than USII system and GSII system. There was no significant difference between USII system and GSII system. 2. In the comparison between wide diameter, compression bending strength was increased in the order of GSII system, USII system, and SSII system. 3. In comparison between the implant diameter, compression bending strength of the wide diameter was greater than the regular diameter in any system(P<0.05). 4. There was no significant difference between the platform switching (III group) and the regular diameter (I group) in USII system. 5. In USII system, fracture of abutment screw and deformation of both fixture and abutment were observed in I, II and III subgroups. 6. Failure pattern of SSII system, which was the fracture of abutment screw and deformation of the abutment and fixture, was observed in both IV and V subgroups. Fracture of some fixtures was observed in subgroup V. 7. Failure pattern of GSII system, which was the fracture of the abutment screw and deformation of the fixture and the abutment, was observed in both VI and VII subgroups. Apart from other subgroups, subgroup VII demonstrated no bending neither the fracture at the top of the fixture. The compressive deformation of internal slope in the fixture was the only thing observed in subgroup VII.

• Journal of Dental Rehabilitation and Applied Science
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• v.31 no.1
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• pp.33-44
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• 2015

Purpose: This study is to evaluate the clinical significance of the platform switching concept by comparing the marginal bone loss around platform-matched and platform-switched implants. Materials and Methods: Date of implant placement, diameter, length, implant-abutment connection type and absence of splinting prosthesis were investigated on patients who performed treatment with implant placement at Wonkwang University Dental Hospital Implant Center. To measure the marginal bone loss around implants, periapical radiographs of patient were used when implant was placed and when visited the center most recently by using the program, Emago advanced v5.6. Results: As a result of observing on 150 implants of 82 patients for 6 - 63 months, platform-matched implants showed $1.16{\pm}0.54mm$, platform-switched implants showed $0.68{\pm}0.27mm$ of marginal bone loss. Conclusion: It was considered that there is the positive effect to reduce marginal bone loss around platform-switched implants.

• Journal of the Korean Ceramic Society
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• v.39 no.1
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• pp.92-98
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• 2002

To investigate the electrode structural effect on the ferroelectric electron emission, the electric field distribution in a 2-dimensional structure was calculated as a function of upper electrode diameter, and the switching charge density and emission charge were measured simultaneously. The simulation of the electric field distribution showed that an asymmetric electrode structure could cause a stray field on the bare surface of the ferroelectric cathode near the edge of upper electrode. The distance of stray field from the electrode edge increased with increasing ferroelectric thickness, but it did not depend on the upper electrode diameter. The switching charge density increased more on the cathode with smaller upper electrode diameter. This was attributed to the stray field on the bare ferroelectric surface near the electrode edge, because the stray field for the asymmetric ferroelectric cathode enhanced polarization switching near the electrode edge. From the switching charge density, the distance of stray field from the electrode edge was calculated as about 11-14${\mu}{\textrm}{m}$. The threshold voltage of electron emission was 61-68 kV/cm, which was almost 3 times lager than the coercive voltage. The threshold voltage was not determined just by coercive voltage, but by strength and distance of the stray-field, which largely depended on the geometrical structure of ferroelectric cathode.

• Proceedings of the KIEE Conference
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• 2002.07a
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• pp.336-338
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• 2002

We improved quench properties of a superconducting fault current limiter (SFCL) based on YBCO thin films by their serial and parallel combinations. The SFCL consisted of 6 switching elements fabricated of 4 inch-diameter YBCO thin films. Simple serial connection resulted in imbalanced power dissipation between switching elements even at the quench current difference of 0.6A. On the other hand, $2{\times}2\;and\;3{\times}2$ stack combinations produced simultaneous quenches. The $3{\times}2$ stack combination showed better simultaneous quench behavior than the $2{\times}2$ stacks. This is suggested to be because the currents between switching elements in parallel connection of the $3{\times}2$ stacks were more effectively redistributed than the $2{\times}2$ stacks.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.141-144
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• 2002

We present current limiting properties of 1.2kV/70A superconducting fault current limiter based on YBCO thin films. This is consisted of 6 wafers (3 parallel ${\times}$ 2 serial connection) with 4 inch-diameter YBCO thin film. The quench current Iq of the switching elements vary between 33.9 and 35.6 A. Within the difference of 0.5 A in the sum of quench current Iq in two stacks, the serial connection of the stacks showed the simultaneous quench behavior in applied power of 1.2 kV /70 A.