• 대한치과보철학회지
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• 제43권6호
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• pp.727-735
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• 2005

Statement of problem. Platform switching in implant prosthesis has been used for esthetic and biological purpose. But there are few reports for this concept. Purpose. The purpose of this study is evaluation of platform switching in wide implant by three dimensional finite element analysis. Materials and Methods. The single implant and prosthesis was modeled in accordance with the geometric designs for Osstem implant system. Three-dimensional finite element models were developed for (1) a wide diameter 3i type titanium implant 5 mm in diameter, 13 mm in length with wide cemented abutment, titanium alloy abutment screw, and prosthesis (2) a wide diameter 3i type titanium implant 5 mm in diameter, 13 mm in length with regular cemented abutment, titanium alloy abutment screw and prosthesis(platform switching) was made for finite element analysis. The abutment screws were subjected to a tightening torque of 30 Ncm. The amount of preload was hypothesized to 650N, and round and flat type prostheses were loaded to 200 N. Four loading offset point (0, 2, 4, 6 mm from the center of the implants) were evaluated. Models were processed by the software programs HyperMesh and ANSA. The PAM-CRASH 2G simulation software was used for analysis of stress. The PAM-VIEW and HyperView were used for post processing. Results. The results from experiment were as follows; 1. von Mises stress value is increased in order of bone, abutment, implant and abutment screw. 2. von Mises stress of abutment screw is lower when platform switching. 3. von Mises stress of implant is lower when platform switching until loading offset 4 mm. 4. von Mises stress of abutment is similar between each other. 5. von Mises stress of bone is slightly higher when platform switching. Conclusion. The von Mises stress pattern of implant components is favor when platform switch ing but slightly higher in bone stress distribution than use of wide abutment. The research about stress distribution is essential for investigation of the cortical bone loss.

• 한국자기학회지
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• 제21권6호
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• pp.193-197
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• 2011

두께가 다른 CoPt 자성막을 전기도금법으로 제작하여 자화역전 기구와 자기상호작용이 자기역전 부피에 미치는 영향을 연구하였다. 자기모멘트 감쇠의 시간의존성과 잔류자기화 곡선 측정결과로부터 모든 시료의 지배적인 자화역전 기구는 자벽고착에 의한 자벽이동임을 알 수 있었다. 자기점성계수 및 비가역 자화율로부터 구한 자기역전 부피는 시료의 두께 및 인가 자기장의 세기에 거의 무관하게 일정하였으나, 자기역전 부피로부터 구한 역전 직경의 크기는 두께가 두꺼울수록 감소하는 경향을 보였다. 이와 같은 현상은 자벽고착에 의해 제어되는 자벽운동과 쌍극자 상호작용에 의한 것으로 판단된다.

• 대한기계학회논문집B
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• 제24권3호
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• pp.459-466
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• 2000

Flow characteristics of turbulent elliptic jets were experimentally investigated using a single-frame PIV system. A sharp-edged elliptic nozzle with aspect ratio(AR) of 2 was tested and the experimental results were compared with those of circular jet having the same equivalent diameter($D_e$). The Reynolds number based on the nozzle exit velocity and nozzle equivalent diameter was about $1{\times}10^4$. The spreading rate along the major and minor axis are different remarkably. The jet half width along the major axis decreases at first and then increases with going downstream. But along the minor axis the jet width increases steadily. The elliptic jet of AR=2 has one switching points at $X/D_e=2$ within the near field. Turbulence properties are also found to be significantly different along the major and minor axis planes.

• 대한전기학회논문지:전기기기및에너지변환시스템부문B
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• 제52권7호
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• pp.315-319
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• 2003

We improved quench properties of a superconducting fault current limiter (SFCL) based on YBCO thin films by their serial and parallel combinations. The SFCL consisted of 6 switching elements fabricated of 4 inch-diameter YBCO thin films. The quench currents of the switching elements were distributed between 33.9 A and 35.6 A. Simple serial connection resulted in imbalanced power dissipation between switching elements even at the quench current difference of 0.6 A. On the other hand, $2{\times}2$ and $3{\times}2$ stack combinations produced simultaneous quenches. The $3{\times}2$ stack combination showed better simultaneous quench behavior than the $2{\times}2$ stacks. This is suggested to be because the currents between switching elements in parallel connection of the $3{\times}2$ stacks were more effectively redistributed than the $2{\times}2$ stacks.

• 한국자기학회지
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• 제10권5호
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• pp.232-236
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• 2000

Cr을 하지층으로 사용한 CoSm 박막은 고기록밀도 수평 자기기록 매체로 가능성이 커 이에 대한 관심이 집중되고 있다. 본 연구에서는 dc 마그네트론 스퍼터링법으로 제작한 CoSm 박막의 자기적 성질의 Ar 가스 스퍼터링 압력 의존성을 조사하였다. 특히 고기록밀도 자기기록 매체에서 magnetic switching volume V＊은 자기기록 매체에 기록된 정보의 열적 안정성, 자화반전 및 잡음을 이해하는데 중요한 자료가 된다. 따라서 본 연구에서는 동일 조건에서 제작한 하지층 Cr위에 스퍼터링 압력을 달리하여 자성층 CoSm을 성장시켜 switching volume의 스퍼터링 압력 의존성을 규명하도록 하였다. 연구 결과 switching volume은 스퍼터링 압력이 증가할수록 감소하며, 그 크기는 9.0-5.2$\times$$10^{-18}$ $cm^3$ 범위 내에 있었다. Switching volume V＊를 이용하여 계산한 switching 단위의 크기는 22 nm 보다 작으며, 이 크기는 고기록 밀도수평 자기기록매체의 열적 안정성에 대한 Sharrock 조건을 만족한다.

• 대한치과의사협회지
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• 제53권9호
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• pp.644-655
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• 2015

Purpose: This study was conducted to evaluate the effect of the fixture abutment connection type and diameter on the screw joint stability in external butt joint for 2nd surgery and internal cone connected type implant system for 1st and 2nd surgery using ultimate fracture strength. Materials and Methods: USII system, SSII system and GSII system of Osstem Implant were used. Each system used the fixture with two different diameters and cement-retained abutments, and tungsten carbide / carbon coated abutment screws were used. Disc shaped stainless steel metal tube was attached using resin-based temporary cement. The experimental group was divided into seven subgroups, including the platform switching shaped specimen that uses a regular abutment in the fixture with a wide diameter in USII system. A static load was increased to the metal tube at 5mm deviated point from the implant central axis until it reached the compression bending strength at a rate of 1mm/min. Then the deformations and patterns of fracture in threaded connection were compared. Results and Conclusion: 1. In the comparison between the Regular diameter, compression bending strength of SSII system was higher than USII system and GSII system. There was no significant difference between USII system and GSII system. 2. In the comparison between wide diameter, compression bending strength was increased in the order of GSII system, USII system, and SSII system. 3. In comparison between the implant diameter, compression bending strength of the wide diameter was greater than the regular diameter in any system(P<0.05). 4. There was no significant difference between the platform switching (III group) and the regular diameter (I group) in USII system. 5. In USII system, fracture of abutment screw and deformation of both fixture and abutment were observed in I, II and III subgroups. 6. Failure pattern of SSII system, which was the fracture of abutment screw and deformation of the abutment and fixture, was observed in both IV and V subgroups. Fracture of some fixtures was observed in subgroup V. 7. Failure pattern of GSII system, which was the fracture of the abutment screw and deformation of the fixture and the abutment, was observed in both VI and VII subgroups. Apart from other subgroups, subgroup VII demonstrated no bending neither the fracture at the top of the fixture. The compressive deformation of internal slope in the fixture was the only thing observed in subgroup VII.

• 구강회복응용과학지
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• 제31권1호
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• pp.33-44
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• 2015

목적: 본 연구는 platform matching, platform switching을 시행한 임플란트의 변연골 소실을 비교하여 platform switching 개념의 임상적 의의를 평가하고자 한다. 연구 재료 및 방법: 원광대학교 치과병원 임플란트 센터에서 치료를 진행한 환자를 대상으로 임플란트 식립 시기, 직경, 길이, 지대주 연결방법 및 보철물 연결고정 유무를 조사하였다. 변연골 소실량을 측정하기 위해서 Emago advanced v5.6 프로그램을 사용하여 임플란트 식립 시와 가장 최근 내원 시의 치근단 방사선 사진을 비교하였다. 결과: 환자 82명의 임플란트 150개를 대상으로 6 - 63개월 동안 관찰한 결과 platform matching 임플란트는 $1.16{\pm}0.54mm$, platform switching 임플란트는 $0.68{\pm}0.27mm$의 변연골 소실을 나타내었다. 결론: Platform switching을 시행함으로써 임플란트의 변연골 소실을 줄이는 효과가 있는 것으로 사료된다.

• 한국세라믹학회지
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• 제39권1호
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• pp.92-98
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• 2002

Pb(Zr$_{0.8}$Ti$_{0.2}$)O$_3$강유전체 음극의 상부 전극 크기를 변화시키며(500$mu extrm{m}$~900$\mu\textrm{m}$)비대칭 전극 구조에서의 전자 방출에 대하여 연구하였다. 펄스 전기장을 가했을 때 나타나는 분극 반전에 의한 전류 밀도는 상부 전극 크기를 감소시킴에 따라 증가하였다. 이것은 비대팅 전극 구조에 의해 강유전체 표면에서 stray-field가 발생하고, stray field가 전극의 모서리 부근의 강유전체 표면 하부에도 분극 반전을 발생시켰기 때문이다. 전기장 전산모사를 통하여 이러한 stay-field의 존재 가능성을 예측할 수 있었고, 분극 반전에 의한 전류 밀도 측정 결과 stray-field가 미치는 거리는 약 11-l4$\mu\textrm{m}$이었다. 전자방출의 문턱전계는 항전계 의 약 3배인 61-68kV/cm이었으며, 문턱전계가 단순히 강유전체의 항전계에 의해 결정되는 것이 아니라, 강유전 음극의 구조에 의해 결정되는 stray-field의 세기와 stray-field가 미치는 거리에 영향을 받음을 전산모사를 통해 예측할 수 있었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 하계학술대회 논문집 A
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• pp.336-338
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• 2002

We improved quench properties of a superconducting fault current limiter (SFCL) based on YBCO thin films by their serial and parallel combinations. The SFCL consisted of 6 switching elements fabricated of 4 inch-diameter YBCO thin films. Simple serial connection resulted in imbalanced power dissipation between switching elements even at the quench current difference of 0.6A. On the other hand, $2{\times}2\;and\;3{\times}2$ stack combinations produced simultaneous quenches. The $3{\times}2$ stack combination showed better simultaneous quench behavior than the $2{\times}2$ stacks. This is suggested to be because the currents between switching elements in parallel connection of the $3{\times}2$ stacks were more effectively redistributed than the $2{\times}2$ stacks.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 센서 박막재료 반도체재료 기술교육
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• pp.141-144
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• 2002

We present current limiting properties of 1.2kV/70A superconducting fault current limiter based on YBCO thin films. This is consisted of 6 wafers (3 parallel ${\times}$ 2 serial connection) with 4 inch-diameter YBCO thin film. The quench current Iq of the switching elements vary between 33.9 and 35.6 A. Within the difference of 0.5 A in the sum of quench current Iq in two stacks, the serial connection of the stacks showed the simultaneous quench behavior in applied power of 1.2 kV /70 A.