• Proceedings of the Materials Research Society of Korea Conference
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• 1995.11a
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• pp.2-2
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• 1995

• Proceedings of the Korean Society for Language and Information Conference
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• 1996.02a
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• pp.277-288
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• 1996

• Proceedings of the Korean Fiber Society Conference
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• 1997.10a
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• pp.344-348
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• 1997

• Bulletin of the Korean Chemical Society
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• v.20 no.8
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• pp.957-960
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• 1999

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.355-355
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• 2016

There has been an explosive development of nanocrystal (NC) synthesis and application due to their composition-dependent specific properties. Despite the composition, shape, and size of NCs foremost determine their physicochemical properties, the surface state and molecule conjugation also drastically change their characteristics. To make practical use of NCs, it is a prerequisite to understand the NC surface state and the degree to which they have been modified because the reaction occurs on the interface between the NCs and the surrounding medium. We report in here an analysis method to identify conjugated ligands and their binding states on semiconductor nanocrystals based on their molecular information. Surface science techniques, such as time-of-flight secondary-ion mass spectrometry (ToF-SIMS) and FT-IR spectroscopy, are adopted based on the micro-aggregated sampling method. Typical trioctylphosphine oxide-based synthesis methods of CdSe/ZnS quantum dots (QDs) have been criticized because of the peculiar effects of impurities on the synthesis processes. Since the ToF-SIMS technique provides molecular composition evidence on the existence of certain ligands, we were able to clearly identify the n-octylphosphonic acid (OPA) as a surface ligand on CdSe/ZnS QDs. Furthermore, the complementary use of the ToF-SIMS technique with the FT-IR technique could reveals the OPA ligands' binding state as bidentate complexes.

• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.1
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• pp.13-20
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• 2003

Both MgO and $Sc_2O_3$ are shown to provide low interface state densities (in the $10^{11}{\;}eV^{-1}{\;}cm{\;}^{-2}$ range)on n-and p-GaN, making them useful for gate dielectrics for metal-oxide semiconductor(MOS) devices and also as surface passivation layers to mitigate current collapse in GaN/AlGaN high electron mobility transistors(HEMTs).Clear evidence of inversion has been demonstrated in gate-controlled MOS p-GaN diodes using both types of oxide. Charge pumping measurements on diodes undergoing a high temperature implant activation anneal show a total surface state density of $~3{\;}{\times}{\;}10^{12}{\;}cm^{-2}$. On HEMT structures, both oxides provide effective passivation of surface states and these devices show improved output power. The MgO/GaN structures are also found to be quite radiation-resistant, making them attractive for satellite and terrestrial communication systems requiring a high tolerance to high energy(40MeV) protons.

• The Korean Journal of Ceramics
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• v.6 no.4
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• pp.339-342
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• 2000

In the present study, we attempted to apply DV-X$\alpha$ method to expressing the reactivity of materials. The expression of reactivity was discussed by comparison between ${\gamma}$-C$_2$G having hydraulic activity and ${\gamma}$-C$_2$S not having hydraulic activity at normal conditions. It was found that the model cluster used for calculation can finely reproduce the bulk and surface states using with and without point charge, respectively. The hydration state was also represented by placing OH￣ on the surface of the cluster. It was calculated that the bond strength of the first layer (as surface) was bigger than that of inner layers (as bulk) for ${\gamma}$-C$_2$S while that of the first layer for ${\gamma}$-C$_2$G was smaller than that of inner layers. Subsequently a model in which OH￣ is coordinated on Ca at the surface was also calculated. The bond strength with OH￣ was stronger than that without OH￣, while for ${\gamma}$-C$_2$G the bond strength with OH￣ was weaker than that without OH￣. From these results, it is concluded that the hydraulic activity depends on whether the bond strength for hydrated state becomes weaker than that unhydrated state or not.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.146.2-146.2
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• 2013

Copper is considered to be the most promising substrate for the growth of high-quality and large area graphene by chemical vapor deposition (CVD), in particular, on the (111) facet. Because the interactions between graphene and Cu substrates influence the orientation, quality, and properties of the synthesized graphene, we studied the interactions using angle-resolved photoemission spectroscopy. The evolution of both the Shockley surface state of the Cu(111) and the ${\pi}$ band of the graphene was measured from the initial stage of CVD growth to the formation of a monolayer. Graphene growth was initiated along the Cu(111) lattice, where the Dirac band crossed the Fermi energy (EF) at the K point without hybridization with the d-band of Cu. Then two rotated domains were additionally grown as the area covered with graphene became wider. The Dirac energy was about -0.4 eV and the energy of the Shockley surface state of Cu(111) shifted toward the EF by ~0.15 eV upon graphene formation. These results indicate weak interactions between graphene and Cu, and the electron transfer is limited to that between the Shockley surface state of Cu(111) and the ${\pi}$ band of graphene. This weak interaction and slight lattice mismatch between graphene and Cu resulted in the growth of rotated graphene domains ($9.6^{\circ}$ and $8.4^{\circ}$), which showed no significant differences in the Dirac band with respect to different orientations. These rotated graphene domains resulted in grain boundaries which would hinder a large-sized single monolayer growth on Cu substrates.

• Bulletin of the Korean Chemical Society
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• v.33 no.3
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• pp.775-778
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• 2012

The potential energy surfaces of ammonia molecule adsorptions on the symmetrically chlorinated Si(100)-$2{\times}1$ surface were explored with SIMOMM:MP2/6-31G(d). It was found that the initial nucleophilic attack by ammonia nitrogen to the surface Si forms a $S_N2$ type transition state, which eventually leads to an HCl molecular desorption. The second ammonia molecule adsorption requires much less reaction barrier, which can be rationalized by the surface cooperative effect. In general, it was shown that the surface Si-Cl bonds can be easily subjected to the substitution reactions by ammonia molecules yielding symmetric surface Si-$NH_2$ bonds, which can be a good initial template for subsequent surface chemical modifications. The ammonia adsorptions are in general more facile than the corresponding water adsorption, since ammonia is better nucleophile.

• International Journal of Naval Architecture and Ocean Engineering
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• v.11 no.1
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• pp.70-81
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• 2019

An improved three dimensional Rankine source method is developed to solve numerically water wave problems in time domain. The free surface and body surface are both represented by continuous panels rather than a discretization by isolated points. The integral of Rankine source 1/r on free surface panel is calculated analytically instead of numerical approximation. Due to the exact algorithm of Rankine source integral applied on the free surface and body surface, a space increment free surface source distribution method is developed and much smaller amount of source panels are required to cover the fluid domain surface than other numerical approximation methods. The proposed method shows a higher accuracy and efficiency compared to other numerical methods for various water wave problems.