• Clinical and Experimental Pediatrics
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• 제52권6호
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• pp.667-673
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• 2009

목 적 : TLR2는 숙주의 항결핵 방어면역의 중요한 역할을 하는 것으로 알려져 있다. 본 연구는 BCG 접종 후 발생한 화농성 림프절염 환자 단핵구에서 TLR2의 발현과 TLR2 리간드 자극에 의한 $TNF-{\alpha}$와 IL-6의 생성을 조사하여 화농성 림프절염 발병과 TLR2의 연관성을 알아보고자 하였다. 방 법 : BCG 접종 후 발생한 화농성 림프절염 환자 16명과 건강 대조군 10명의 말초 혈액에서 단핵구를 분리하고, TLR2 리간드인 Pam3CSK4로 자극한 후 유세포분석과 역전사중합효소반응을 이용하여 TLR2의 발현을 측정하였고, 자극 후 $TNF-{\alpha}$와 IL-6의 생성을 측정하여 TLR2의 발현 정도를 간접적으로 조사하였다. 결 과 : BCG 접종 후 발생한 화농성 림프절염 환자 단핵구의 TLR2 발현 정도($3.39{\pm}1.2%$)는 대조군($4.64{\pm}2.6%$)에 비하여 유의하게 감소하였고, 단핵구 자극에 의한 $TNF-{\alpha}$와 IL-6의 생성도 대조군($TNF-{\alpha}$, $1,098.5{\pm}94.3pg/mL$; IL-6, $6,696.3{\pm}544.3pg/mL$)에 비하여 환자군($TNF-{\alpha}$, $775.5{\pm}60.8pg/mL$; IL-6, $4,645.8{\pm}583.9pg/mL$)에서 유의하게 감소하였다. 그리고 자극 시간에 따른 TLR2 발현 정도와 $TNF-{\alpha}$와 IL-6의 생성 증가가 유사한 양상을 나타내었다. 결 론 : 본 연구의 결과에서 BCG 접종 후 발생한 화농성 림프절염 환자군 단핵구의 TLR2 발현 감소가 연관되어 있고, M. bovis BCG의 리간드 인식에 TLR2가 관여함을 추정할 수 있다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.100-101
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• 2012

The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.

• 한국자기학회지
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• 제22권3호
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• pp.85-90
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• 2012

$Nd_2Fe_{14}B$ 화합물 결정의 산화 및 미세 $Nd_2Fe_{14}B$ 결정입자의 보자력에 미치는 산화의 영향을 조사하였다. $Nd_2Fe_{14}B$ 화합물 결정의 산화속도는 $Nd_{15}Fe_{77}B_8$ 합금 잉곳 중의 과잉 성장시킨 $Nd_2Fe_{14}B$ 결정립을 이용하여 조사하였다. $Nd_2Fe_{14}B$ 화합물 결정의 산화는 이 결정상의 ${\alpha}$-Fe, $Fe_3B$, 및 Nd 산화물 복합상으로의 분해에 의해 일어 났다. $Nd_2Fe_{14}B$ 화합물 결정의 산화속도는 결정 방위와는 무관하였다. 산화반응 속도 식은 단순한 직선관계로 나타났다. $Nd_2Fe_{14}B$ 화합물 결정의 산화에 대한 활성화에너지는 약 26.8 kJ/mol로 계산되었다. HDDR 처리한 $Nd_{15}Fe_{77}B_8$ 합금을 볼밀링하여 임계단자구 크기에 유사한 미세한 $Nd_2Fe_{14}B$ 결정입자를 제조하고, 이 입자들을 이용하여 보자력에 미치는 산화의 영향을 조사하였다. 임계단자구 크기에 유사한 미세한 $Nd_2Fe_{14}B$ 결정입자(${\fallingdotseq}0.3\;{\mu}m$)는 9 kOe 이상의 높은 보자력을 가졌다. 그러나, 이 보자력은 공기 중에서 온도 상승에 따라 급격하게 저하하였다($200^{\circ}C$에서 2 kOe 이하). 이러한 급격한 보자력의 감소는 산화에 의해 미세 입자의 표면에 형성된 연자성 ${\alpha}$-Fe 및 $Fe_3B$ 상 때문으로 판단되었다.