• Journal of the Semiconductor & Display Technology
• /
• v.18 no.4
• /
• pp.120-123
• /
• 2019

The effect of surface plasmon on ZTO thin films was investigated. The phenomenon of depletion occurring in the interface of the ZTO thin film created a potential barrier and the dielectric layer of the depletion formed a non-mass particle called plasmon. ZTO thin film represents n-type semiconductor features, and surface current by plasma has been able to obtain the effect of improving electrical efficiency as a result of high current at positive voltage and low current at negative voltage. It can be seen that the reduction of electric charge due to recombination of electronic hole pairs by heat treatment of compound semiconductors induces higher surface current in semiconductor devices.

• Journal of the Korean Society for Nondestructive Testing
• /
• v.34 no.5
• /
• pp.377-383
• /
• 2014

An addressable conducting network (ACN) makes it possible to monitor the condition of a structure using the electrical resistance between electrodes on the surface of a carbon fiber reinforced plastics (CFRP) structure. To improve the damage detection reliability of the ACN, the contact resistances between the electrodes and CFRP laminates needs to be minimized. In this study, silver nanoparticle electrodes were fabricated via printed electronics techniques on a CFRP composite. The contact resistance between the silver electrodes and CFRP were measured with respect to various fabrication conditions such as the sintering temperature of the silver nano-ink and the surface roughness of the CFRP laminates. The interfaces between the silver electrode and carbon fibers were observed using a scanning electron microscope (SEM). Based on this study, it was found that the lowest contact resistance of $0.3664{\Omega}$ could be achieved when the sintering temperature of the silver nano-ink and surface roughness were $120^{\circ}C$ and 0.230 a, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.19-19
• /
• 2009

TiNxOy/TiNx multilayer thin films with a high resistance (~ k$Omega$) were deposited on SiO2/Si substrates at room temperature by sputtering. The TiNx thin films show island and smooth surface morphology in samples prepared by dc and rf magnetron sputtering, respectively. TiNxOy/TiNx multilayer has been developed to control temperature coefficient of resistance (TCR) by the incorporation of TiNx layer (positive TCR) inserted into TiNxOy layers(negative TCR). Electrical and structural properties of sputtered TiNxOy/TiNx multilayer films were investigated as a function of annealing temperature. In order to achieve a stable high resistivity, multilayer films were annealed at various temperatures in oxygen ambient. Samples annealed at 700 oC for 1 min exhibit a good TCR value and a stable high resistivity.

• Elastomers and Composites
• /
• v.33 no.4
• /
• pp.246-254
• /
• 1998

In order to investigate the characteristics of resistance and conduction of vulcanized styrene butadiene rubber (SBR)/ carbon black (CB) composites, surface/ volume resistivity, point to point resistance, decay time, and electrical conduction experiments with four different kinds of non-conductive carbon black were measured. When about 50phr of carbon black were loaded in SBR, all resistivites suddenly decreased and critical region (Rc) was shown. Current densities of SBR/CB composites showed critical point (Pc) and increased with the electric fields. Electrical conduction mechanisms of SBR/CB composites could be considered as the ohmic conduction at low electric fields and the space charge limited conduction (SCLC) at high electric fields, respectively.

• Proceedings of the KIEE Conference
• /
• 2011.07a
• /
• pp.1463-1464
• /
• 2011

An indium thin oxide(ITO) is used as a substrate material for organic light-emitting diodes(OLEDs) and organic photovoltaic cells. This study examined the effects of an $O_2$ plasma treatment on the electrical properties of an organic photovoltaic cell. The four probe method and Atomic force microscope(AFM) revealed the lowest surface resistance at the plasma treatment intensity of 250 [W] and the lowest average surface roughness of 2.0 [nm] at 250 [W]. The lowest average resistance of 17 [${\Omega}$/sq] was also observed at 250 [W] 40 [sec]. The $O_2$ plasma treatment device and a basic device in a structure of CuPc/C60/BCP/Al on ITO glass were fabricated by thermal evaporation, respectively. When the $O_2$ plasma treatment was used to the ITO, The experimental results revealed that the power conversion efficiency(PCE) indicated 65 [%] higher in the PCE than that without the plasma treatment.

• Korean Journal of Materials Research
• /
• v.18 no.5
• /
• pp.259-265
• /
• 2008

The corrosion and degradation factors of a current collector in a molten carbonate fuel cell (MCFC) were investigated to determine the optimized coating thickness of nickel on STS316L. The results show that the surface morphology and electrical properties depended on the nickel coating thickness. The surface morphology gradually changed from a flat to a porous structure along as the nickel coating thickness decreased, and the electrical resistance of the nickel-coated STS316L increased as the nickel coating thickness decreased. This can be attributed to the diffusion of elements of Fe and Cr from the substrate through the nickel grain boundaries. Additionally, carburization in the metal grains or grain boundaries in an anodic environment was found to influence the electrical properties due to matrix distortion. The resistance of Cr-oxide layers formed in an anodic environment causes a drop in the potential, resulting in a decrease in the system efficiency.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.20 no.3
• /
• pp.234-239
• /
• 2007

This paper describes the TiW ohmic contact characteristics under the surface treatment of the polycrystalline 3C-SiC thin film grown on $SiO_2/Si(100)$ wafers by APCVD. The poly 3C-SiC surface was polished by using CMP(chemical mechanical polishing) process and then oxidized by wet-oxidation process, and finally removed SiC oxide layers. A TiW thin film as a metalization process was deposited on the surface treated poly 3C-SiC layer and was annealed through a RTA(rapid thermal annealing) process. TiW/poly 3C-SiC was investigated to get mechanical, physical, and electrical characteristics using SEM, XRD, XPS, AFM, optical microscope, I-V characteristic, and four-point probe, respectively. Contact resistivity of the surface treated 3C-SiC was measured as the lowest $1.2{\times}10^{-5}{\Omega}cm^2$ at $900^{\circ}C$ for 45 sec. Therefore, the surface treatments of poly 3C-SiC are necessary to get better contact resistance for extreme environment MEMS applications.

• Korean Journal of Materials Research
• /
• v.23 no.6
• /
• pp.322-328
• /
• 2013

The relationship the between electrical properties and surface roughness (Ra) of a wet-etched silicon wafer were studied. Ra was measured by an alpha-step process and atomic force microscopy (AFM) while varying the measuring range $10{\times}10$, $40{\times}40$, and $1000{\times}1000{\mu}m$. The resistivity was measured by assessing the surface resistance using a four-point probe method. The relationship between the resistivity and Ra was explained in terms of the surface roughness. The minimum error value between the experimental and theoretical resistivities was 4.23% when the Ra was in a range of $10{\times}10{\mu}m$ according to AFM measurement. The maximum error value was 14.09% when the Ra was in a range of $40{\times}40{\mu}m$ according to AFM measurement. Thus, the resistivity could be estimated when the Ra was in a narrow range.

• Korean Journal of Materials Research
• /
• v.23 no.6
• /
• pp.316-321
• /
• 2013

The electrical properties and surface morphology changes of a silicon wafer as a function of the HF concentration as the wafer is etched were studied. The HF concentrations were 28, 30, 32, 34, and 36 wt%. The surface morphology changes of the silicon wafer were measured by an SEM ($80^{\circ}$ tilted at ${\times}200$) and the resistivity was measured by assessing the surface resistance using a four-point probe method. The etching rate increased as the HF concentration increased. The maximum etching rate 27.31 ${\mu}m/min$ was achieved at an HF concentration of 36 wt%. A concave wave formed on the wafer after the wet etching process. The size of the wave was largest and the resistivity reached 7.54 $ohm{\cdot}cm$ at an 30 wt% of HF concentration. At an HF concentration of 30 wt%, therefore, a silicon wafer should have good joining strength with a metal backing as well as good electrical properties.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.4 no.1
• /
• pp.3-12
• /
• 1967

This study has been endeavored to deposit resistance films of tin oxide on the cylindrical Pyrex glass rods. In this report, at first an outline of the film formation is described and later some electrical properities of the resistance films manufactured through new method is discussed in detail. Because the new method which is called, "Chemical Vapour Reaction Process", is not only easy to get stable resistance films, but also doesn't need vacuum systtem, it seems to be a promising fundamental process to go into flow system mass production. Electrical properties of resistance films made by the new mathod are similar to or surpassing those by provious method (for example splay method). The top data thus obtained shows that surface resistivity is 25ohm/sq. with 12 ppm in temperature coefficient of resistor. resistor.