• Proceedings of the Korean Society of Propulsion Engineers Conference
• /
• 2012.05a
• /
• pp.429-434
• /
• 2012

Ignition delay of micro/nano aluminum particles is caused by aluminum oxide shell. The method of minimizing this ignition delay is proposed in the study. Generating and heating of particles are processed at the same time. As soon as heated particles are produced, they immediately contact with oxygen. Chemical reaction is induced on the contact surface instead of crystallization of oxide shell. Finally particles are ignited. Aluminum particles are generated by laser ablation on an aluminum plate using Nd:YAG pulse laser. Injected particles are confirmed through visualization of particles using scattering method. $CO_2$ continuous laser supplies heat to aluminum plate and generated particles. Trace of burning particles is observed in the experiment.

• Korean Journal of Metals and Materials
• /
• v.49 no.1
• /
• pp.46-51
• /
• 2011

Real-time formation of $L1_0$ phase of FePt nanoparticles in the gas phase during ultrasonic-spray pyrolysis is first discussed in the present study. Without any post heat treatment, $L1_0$ phase of FePt nanoparticles appeared at the temperature above $900^{\circ}C$ in the gas phase synthesis. X-ray diffractometry (XRD) and transmission electron microscopy (TEM) studies revealed that FePt nanoparticles less than 10 nm in size contained small volume of $L1_0$ fct phase. However, in other samples obtained at the temperature below $900^{\circ}C$, iron oxide phase co-existed and no evidence of phase transformation was found. Thus, it is anticipated that the time of flight of particles required for crystallization and phase transformation was extended according to the increase of the collision rate. Finally, magnetic properties represented by coercivity and saturation magnetization and functional groups on the particle surface were discussed based on VSM and FT-IR results.

• Korean Journal of Metals and Materials
• /
• v.49 no.11
• /
• pp.874-881
• /
• 2011

The present study describes a new technique to extract the primary silicon from an Al-Si alloy melt using centrifugal force during its solidification. The primary silicon was separated from an Al-50 wt.%Si alloy by centrifugal force in the form of a foam, which facilitated subsequent acid leaching to extract the pure silicon due to its wide surface area. The foam recovery after centrifugal separation was decreased as centrifugal acceleration was increased. The final recovery after acid leaching became closer to the solid fraction of the alloy, which was calculated from the Al-Si binary phase diagram, with increasing centrifugal acceleration due to the effective removal of the attached Al on the foam. The purity of the primary silicon obtained by the centrifugal separation method was over 99.99%, with only aluminum being also present.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
• /
• v.21 no.2
• /
• pp.271-281
• /
• 2023

A study was conducted on the vitrification of the rare earth oxide waste generated from the PyroGreen process. The target rare earth waste consisted of eight elements: Nd, Ce, La, Pr, Sm, Y, Gd, and Eu. The waste loading of the rare earth waste in the developed borosilicate glass system was 20wt%. The fabricated glass, processed at 1,200℃, exhibited uniform and homogeneous surface without any crystallization and precipitation. The viscosity and electrical conductivity of the melted glass at 1,200℃ were 7.2 poise and 1.1 S·cm^-1, respectively, that were suitable for the operation of the vitrification facility. The calculated leaching index of Cs, Co, and Sr were 10.4, 10.6, and 9.8, respectively. The evaluated Product Consistency Test (PCT) normalized release of the glass indicated that the glass satisfied the requirements for the disposal acceptance criteria. Furthermore, the pristine, 90 days water immersed, 30 thermal cycled, and 10 MGy gamma ray irradiated glasses exhibited good compressive strength. The results indicated that the fabricated glass containing rare earth waste from the PyroGreen process was acceptable for the disposal in the repository, in terms of chemical durability and mechanical strength.

• Nuclear Engineering and Technology
• /
• v.55 no.9
• /
• pp.3121-3125
• /
• 2023

Neutron conversion detectors that use ¹⁰B-enriched boron carbide are feasible alternatives to ³He-based detectors. We prepared boron carbide films at micron-scale thickness using direct-current magnetron sputtering. The structural characteristics of natural B₄C films, including density, roughness, crystallization, and purity, were analyzed using grazing incidence X-ray reflectivity, X-ray diffraction, X-ray photoelectron spectroscopy, time-of-flight secondary ion mass spectrometry, and scanning electron microscopy. A beam profile test was conducted to verify the practicality of the ¹⁰B-enriched B₄C neutron conversion layer. A clear profile indicated the high quality of the neutron conversion of the boron carbide layer.

• Journal of the Mineralogical Society of Korea
• /
• v.10 no.1
• /
• pp.18-32
• /
• 1997

Analysis of geological data, relating to occurrence and formation of diamonds as well as host rocks, inclined author to have different outlook on the diamond genesis and to establish a proposition on their formation at pneumatolytic-hydrothermal conditions near superficial Earth zones. Based on that theoretical foundations and experimental works, the first low-pressure and low-temperature hydrothermal diamond synthesis from water solution in pressure autoclave was executed. As a result, the natural diamond seed crystal grew bigger ad coupling of the synthetic diamond single-crystalline grains were obtained. SEM documentation proofs that parallely paragenetic crystallization of quartz and diamond, and nucleation of new octahedral diamond crystals brush take place on the seed crystal surface. Forecast of none times growth of diamond industrial application at 2000 and seventeen times at 2010 with reference to 1995, needs technology of large and pure single-crystals diamond synthesis. Growth of the stable and destressed diamond single-crystals in the pseudo-metastable diamond plot, may be realized with processes going through the long time and with participation of free radicals catalysts admixtures only. Sol-gel colloidal processes are an example of environment which form stable crystals in thermodynamically unstable conditions through a long time. Paper critically discusses a whole way of studies on the diamond synthesis, from high-pressure and high-temperature processes through chemical vapour deposition up to hydrothermal experiments.

• Korean Journal of Materials Research
• /
• v.33 no.5
• /
• pp.222-228
• /
• 2023

Transition metal oxides formed by a single or heterogeneous combination of transition metal ions and oxygen ions have various types of crystal structures, which can be classified as layered structures and non-layered structures. With non-layered structures, it is difficult to realize a two-dimensional structure using conventional synthesis methods. In this study, we report the synthesis of cobalt oxide into wafer-scale nanosheets using a surfactant-assisted method. A monolayer of ionized surfactant at the water-air interface acts as a flexible template for direct cobalt oxide crystallization below. The nanosheets synthesized on the water surface can be easily transferred to an arbitrary substrate. In addition, the synthesizing morphological and crystal structures of the nanosheets were analyzed according to the reaction temperatures. The electrochemical properties of the synthesized nanosheets were also measured at each temperature. The nanosheets synthesized at 70 ℃ exhibited higher catalytic properties for the oxygen evolution reaction than those synthesized at other temperatures. This work suggests the possibility of changing material performance by adjusting synthesis temperature when synthesizing 2D nanomaterials using a wide range of functional oxides, resulting in improved physical properties.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.11a
• /
• pp.67-67
• /
• 2009

Due to the scaling down of the dielectrics thickness, the leakage currents arising from electron tunneling through the dielectrics has become the major technical barrier. Thus, much works has focused on the development of high k dielectrics in both cases of memories and CMOS fields. Among the high-k materials, $Al_2O_3$ considered as good candidate has been attracting much attentions, which own some good properties as high dielectric constant k value (~9), a high bandgap (~2eV) and elevated crystallization temperature, etc. Due to the easy control of ion energy and flux, low ownership and simple structure of the inductively coupled plasma (ICP), we chose it for high-density plasma in our study. And the $BCl_3$ was included in the gas due to the effective extraction of oxygen in the form of BClxOy compound. In this study, the etch characteristic of ALD deposited $Al_2O_3$ thin film was investigated in $BCl_3/N_2$ plasma. The experiment were performed by comparing etch rates and selectivity of $Al_2O_3$ over $SiO_2$ as functions of the input plasma parameters such as gas mixing ratio, DC-bias voltage and RF power and process pressure. The maximum etch rate was obtained under 15 mTorr process perssure, 700 W RF power, $BCl_3$(6 sccm)/$N_2$(14 sccm) plasma, and the highest etch selectivity was 1.9. We used the x-ray photoelectron spectroscopy (XPS) to investigate the chemical reactions on the etched surface. The Auger electron spectroscopy (AES) was used for elemental analysis of etched surface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.140-140
• /
• 2009

The Metal-ferroelectric-semiconductor (MFS) structure has superior advantages such as high density integration and non-destructive read-out operation. However, to obtain the desired electrical characteristics of an MFS structure is difficult because of interfacial reactions between ferroelectric thin film and Si substrate. As an alternative solution, the MFS structure with buffer insulating layer, i.e. metal-ferroelectric-insulator-semiconductor (MFIS), has been proposed to improve the interfacial properties. Insulators investigated as a buffer insulator in a MFIS structure, include $Ta_2O_5$, $HfO_2$, and $ZrO_2$ which are mainly high-k dielectrics. In this study, we prepared the Dy-doped $La_2O_3$ solution buffer layer as an insulator. To form a Dy-doped $La_2O_3$ buffer layer, the solution was spin-coated on p-type Si(100) wafer. The coated Dy-doped $La_2O_3$ films were annealed at various temperatures by rapid thermal annealing (RTA). To evaluate electrical properties, Au electrodes were thermally evaporated onto the surface of the samples. Finally, we observed the surface morphology and crystallization quality of the Dy-doped $La_2O_3$ on Si using atomic force microscopy (AFM) and x-ray diffractometer (XRD), respectively. To evaluate electrical properties, the capacitance-voltage (C-V) and current density-voltage (J-V) characteristics of Au/Dy-doped La2O3/Si structure were measured.

• The Korean Journal of Ceramics
• /
• v.3 no.2
• /
• pp.116-123
• /
• 1997

A chemically stabilized $\beta$-cristobalite, which is stabilized by stuffing cations of $Ca^{2+}$ and $Al^{3+}$, was prepared by a solution-polymerization route employing Pechini resin or PVA solution as a polymeric carrier. The polymeric carrier affected the crystallization temperature, morphology of calicined powder, and particle size distribution. In case of the polyvinyl alcohol (PVA) solution process, a fine $\beta$-cristobalite powder with a narrow particle size distribution (average particle size : 0.3$\mu\textrm{m}$) and a BET specific surface area of 72 $\m^2$/g was prepared by an attrition-milling for 1 h after calcination at 110$0^{\circ}C$ for 1h. Wider particle size distribution and higher specific surface area were observed for the $\beta$-cristobalite powder derived from Pechini resin. The cubie(P1-to-tetraganalb) phase transformation in polynystalline $\beta$-cristobalite was induced at approximately 18$0^{\circ}C$. Like other materials showing transformation toughening, a critical size effect controlled the $\beta$-to-$\alpha$ transformation. Densifed cristobalite sample had some cracks in its internal texture after annealing. The cracks, occurred spontaneoulsy on cooling, were observed in the sample with an average grain sizes of 4.0 $\mu\textrm{m}$ or above. In case of the sintered cristobalite having a composition of CaO.$2Al_2O_3$.40SiO$_2$, small amount of amorphous phase and slow grain growth during annealing were observed. Shear stress-induced transformation was also observed in ground specimen. Cristobalite having a composition of CaO.2Al2O3.80SiO2 showed a more sensitive response to shear stress than the CaO.$2Al_2O_3$.40SiO$_2$ type cristobalite. Shear-induced transformation resulted in an increase of volume about 13% in $\alpha$-cristobalite phase on annealing for above 10 h in the case of the former composition.