• 센서학회지
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• 제2권1호
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• pp.65-74
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• 1993

본(本) 연구(硏究)에서는 소형(小型) 정전유도형(靜電誘導型) 모터를 제작하고 이 모터에 인가하는 3상(相) 교류전압(交流電壓) 및 주파수(周波數)를 가변(可變)하였을 때의 회전자(回轉字)의 회전속도(回轉速度)의 특성을 실험적으로 검토하였다. 또한 정전유도형(靜電誘導型) 모터의 작동기구상(作動機構上) 회전자(回轉字) 표층물질(表層物質) 및 내층물질(內層物質)의 표면저항율(表面抵抗率), 비유전율(比誘電率) 및 전하완화시정수(電荷緩和時定數)를 변화시켜 회전자(回轉字) 및 고정자(固定子) 사이의 전계강도(電界强度) 및 회전자(回轉字) 표면물질상(表面物質上)의 표면유기전하(表面誘起電荷)의 분포(分布) 및 유기속도(誘起速度)를 변화시킴으로서 소형(小型) 정전유도형(靜電誘導型) 모터의 회전자의 회전속도에 미치는 영향을 검토하였다. 실험(實驗) 결과(結果), 회전자(回轉字) 표층물질(表層物質)의 비유전율(比誘電率), 표면저항률(表面抵抗率) 및 전하완화시정수(電荷緩和時定數) 및 내층물질(內層物質)의 비저항율(比抵抗率)이 모터의 회전속도(回轉速度)에 매우 큰 영향을 미침이 확인되었다. 또한 모터에 인가하는 3상(相) 전원(電源)의 전압(電壓) 및 주파수(周波數)도 모터의 회전(回轉)에 매우 큰 영향을 주며, 회전속도(回轉速度)는 인가전압(印加電壓) 및 주파수(周波數)에 일차(一次) 비례(比例)하여 증가함을 보여주었다. 회전자의 표층물질(表層物質)이 $BaTiO_{3}$ 80% 내층물질(內層物質)이 Cu 일때 무부하(無負荷) 최대속도(最大速度)는 4.5 kV, 220 Hz에서 5500 rpm이 얻어졌다.

• 한국세라믹학회지
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• 제30권11호
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• pp.933-940
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• 1993

SO42-/Al2O3 powder was prepared by the coprecipitation method from the Al(NO3)3.9H2O and NH4OH and followed by being treated with various concentrations of sulfuric acid. The characterization of these powders was performed with XRD, BET and FT-IR. The surface charge density at alumina/KCl(aq) interface was measured by potentiometric titration method. From the experimental data it was shown that acid strength, specfic surface area, and structure of surface treated alumina were independent on the amount of exchanged SO42-. However, the acid amounts of alumina were increased with the amounts of SO42- formed on alumina surface. The relation between the acid amount of SO42- ion exchanged alumina surface and the surface charge density for SO42-/Al2O3/KCl(aq) interface was investigated.

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2002년도 추계총회 및 연구발표회 초록집
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• pp.86.2-86
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• 2002

• 한국세라믹학회지
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• 제33권7호
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• pp.823-831
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• 1996

Due to the intrinsic low surface activation of ${\gamma}$-alumina it has been used limitely in practice. Accordingly forward enhancing its utility ${\gamma}$-alumina surface was treated with slfuricf aicd nitric acid and chloric acid respec-tively. Subsequently the effects of surface activity on the surface electrical characteristics were investigated. The ${\gamma}$-alumina was prepared by the precipitation of aluminium nitrate [Al(NO3)3.9H2O] using ammonia water as a precipitator and it was chemically treated with such acids mentioned above. The surface and morphology of the acid-treated ${\gamma}$-alumina were analysed by XRD, BET and the surface activities were measured by the amine titration methods. The interfacial properties of the ${\gamma}$-alumina dispersed in electrolyte solution were esti-mated by the surface charge density measured using potentiometric tiration. Based on the relation between surface charge density and the acid amount the following results were drawn for the surface and interfacial electrical properties ; Acidic properties of surface-treated alumina increase with anion load on alumina surface. P. Z. C decreases with acid amount on alumina surface. The surface charge densities were apart from electrolyte ionic strength. The acidity of ${\gamma}$-alumina is linearly dependent on the P. Z,.C when the ${\gamma}$-alumina was dispersed in aqueous electrolyte solution.

• JSTS:Journal of Semiconductor Technology and Science
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• 제10권2호
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• pp.100-106
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• 2010

The impact of surface quantization on device parameters of a Si metal oxide semiconductor (MOS) capacitor has been analyzed in the present work. Variation of conduction band bending, position of discrete energy states, variation of surface potential, and the variation of inversion carrier concentration at charge centroid have been analyzed for different gate voltages, substrate doping concentrations and oxide thicknesses. Oxide thickness calculated from the experimental C-V data of a MOS capacitor is different from the actual oxide thickness, since such data include the effect of surface quantization. A correction factor has been developed considering the effect of charge centroid in presence of surface quantization at strong inversion and it has been observed that the correction due to surface quantization is crucial for highly doped substrate with thinner gate oxide.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 추계학술대회 논문집 전기물성,응용부문
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• pp.197-200
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• 2005

As Plasma Immersion ion Implantation (PIII) using a conducting grid is very useful to reduce the effect of capacitance and charging in surface modification. If the bias voltage applied to the conducting grid is in the range of hundreds of volts, the effects of surface charge and space charge substantially affect the incident ion energy and ion current to the surface. In this paper, through an 1d and a 2d PIC simulation the time varying formation of the space charge and surface charge is analyzed. Experiment with the optimally designed grid on the basis of the simulation results is conducted, and the results of both cases with grid and without grid are compared. In our work with Poly Urethane(PU), the improvement of adhesion is yielded by increasing surface roughness and decreasing Si component of PU.

• 전기의세계
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• 제28권10호
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• pp.48-54
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• 1979

The electrification phenomena of polymerized materials is governed by the competitive processes of the charge generation and the charge dissipation. In this paper, The charged particles were supplied on the naked upper surface of the polyethylene film from a point corona discharge with a screen electrode which controls the potential difference across the film. The charging current with the corona charging was found to be larger than that obtained with the electric charging on the MIM structure and the discharge current was found to flow in the same direction as that of the charging current. these results can suggest that the charge injection occurs from the interface between the polethylene surface and the accumulated charge layer, the injected charge are trapped and the space charge is established.

• 한국진공학회지
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• 제4권S2호
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• pp.156-162
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• 1995

For a stimulating neural electrode, the charge density should be as large as possible to provide adequate stimulation of the nervous system while allowing for miniaturization of the electrode. Since iridium oxide is able to produce high charge densities while preventing undesirable reactions due to charge storage, it has become a promising material for neural prostheses. Successful production of stable Ir and Ir oxide films on various substrates now limits the use of this material. Ir was deposited on two differently prepared surface of (mirror finish, passivation) surgical Ti-6AI-4V with several methods. Ion beam mixing of sputter deposited Ir films on passivated Ti-6AI-4V produced stable and good adherent Ir films. It was found that the increase in charge density of pure Ir on continuous cyclingis due to the accumulation of the oxide phase ( associated with a large surface area) in which the valence state of iridium changes and the double-layer capacitance increases. This study also showed that the double layer capacitance is equally or even more responsible for the high charge density of anodically formed Ir oxide.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권4호
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• pp.226-231
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• 2000

In this paper, we present new method to analyze the space charge effect on the electrical characteristics in polymer. It is new measurement system and analysis method that have not reported yet. By using this measurement system, we make observation to space charge accumulated on the surface of polymer at AC voltage, so it is examined to verify the correlation of space charge and partial discharge(PD). In the result of experiment, it can be known that PD pattern is related more closely to space charge accumulated on the surface of polymer than in the inner part, and applied voltage in the air is ruled by this dynamic partial discharge. Also, above critical voltage, the space charge accumulated on the surface of polymer have no effect to the magnitude of PD and the applied voltage in the air. It has been known that the electric power of the dissolution system is proportioned to the frequency and the magnitude of applied voltage, but we can know by this result of the experiment that the efficiency of the dissolution is not related to the rise of voltage above critical voltage.

• 한국전기전자재료학회논문지
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• 제18권4호
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• pp.350-356
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• 2005

We report the space charge and the surface potential of the interface between metal and copper(Ⅱ)-phthalocyanine(CuPc) thin films by measuring the microwave reflection coefficients S/sub 11/ of thin films using a near-field scanning microwave microscope(NSMM). CuPc thin films were prepared on Au and Al thin films using a thermal evaporation method. Two kinds of CuPc thin films were prepared by different substrate heating conditions; one was deposited on preheated substrate at 150。C and the other was annealed after deposition. The microwave reflection coefficients S/sub 11/ of CuPc thin films were changed by the dependence on grain alignment due to heat treatment conditions and depended on thickness of CuPc thin films. Electrical conductivity of interface between metal and organic CuPc was changed by the space charge of the interface. By comparing reflection coefficient S/sub 11/ we observed the electrical conductivity changes of CuPc thin films by the changes of surface potential and space charge at the interface.