• Progress in Superconductivity
• /
• v.14 no.2
• /
• pp.99-101
• /
• 2012

Fluorescent yield X-ray absorption fine structure (XAFS) spectroscopy is useful for analyzing local structure of specific elements in matrices. We developed an XAFS apparatus with a 100-pixel superconducting tunnel junction (STJ) detector array with a high sensitivity and a high resolution for light-element dopants in wide-gap semiconductors. An STJ detector has a pixel size of $100{\mu}m$ square, and an asymmetric layer structure of Nb(300 nm)-Al(70 nm)/AlOx/Al(70 nm)-Nb(50 nm). The 100-pixel STJ array has an effective area of $1mm^2$. The XAFS apparatus with the STJ array detector was installed in BL-11A of High Energy Accelerator Research Organization, Photon Factory (KEK PF). Fluorescent X-ray spectrum for boron nitride showed that the average energy resolution of the 100-pixels is 12 eV in full width half maximum for the N-K line, and The C-K and N-K lines are separated without peak tail overlap. We analyzed the N dopant atoms implanted into 4H-SiC substrates at a dose of 300 ppm in a 200 nm-thick surface layer. From a comparison between measured X-ray Absorption Near Edge Structure (XANES) spectra and ab initio FEFF calculations, it has been revealed that the N atoms substitute for the C site of the SiC lattice.

• Journal of Astronomy and Space Sciences
• /
• v.21 no.4
• /
• pp.481-492
• /
• 2004

We report the successful fabrication and I-V curve superconductivity test results of the Nb/Al-based superconducting tunnel junctions. STJs with side-lengths of 20, 40, 60 and $80{\mu}m$ were fabricated by deposition of polycrystalline Nb/Al/AlOx/Al/Nb 5-layer thin films incorporated on a 3-inch Si wafer. STJ was designed by $Tanner^{TM}$ L-Edit 8.3 program, and fabricated in SQUID fabrication facility, KRISS. S-layer STJ thin-films were fabricated using UV photolithography, DC magnetron sputtering, Reactive ion etching, and CVD(Chemical Vapor Deposition) techniques. Superconducting state test for STJ was succeeded in 4K with liquid helium cooling system. Their performance indicators such ie energy gap, normal resistance, normal resistivity, dynamic resistance, dynamic resistivity, and quality factor were measured from I-V curve. Fabricated Nb/Al STJ shows $11\%$ higher FWHM energy resolution than genuine Nb STJ.

• Bulletin of the Korean Space Science Society
• /
• 2004.10b
• /
• pp.68-68
• /
• 2004

• Bulletin of the Korean Space Science Society
• /
• 2008.10a
• /
• pp.37.3-37.3
• /
• 2008

STJ(Superconducting Tunnel Junction) technique offers next generation photon detectors exhibiting high energy resolution, high quantum efficiency and photon counting ability over the broad wavelength range from X-ray to NIR. We report the succcess in fabrication of Ta/Al-AlOx-Al/Ta and Nb/Al-AlOx-Al/Nb micro structure deposited on sapphire substrates using various techniques including UV photolithography, DC Sputtering, RIE, and PECVD technique. The characterization experiment was undertaken in an Adiabatic Demagnetization Refrigerator at an operating temperature below 50mK. The details of experimental investigations for electrical characterization of STJ of $20\sim80{\mu}m$ in side-lengths are discussed. The measured I-V curves were used to derive The detector performance indicators such as energy gap, energy resolution, normal resistance, normal resistivity, dynamic resistance, dynamic resistivity, and quality factor.