• Journal of Electrochemical Science and Technology
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• v.10 no.1
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• pp.89-97
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• 2019

As a promising candidate for anode materials in lithium ion battery (LIB), tungsten trioxide ($WO_3$) and tungsten disulfide ($WS_2$) nanocrystals were synthesized, and their electrochemical properties were comprehensibly studied using a half cell. One-dimensional $WO_3$ nanowires with uniform diameter of 10 nm were synthesized by hydrothermal method, and two-dimensional (2D) $WS_2$ nanosheets by unique gas phase sulfurization of $WO_3$ using $H_2S$. $WS_2$ nanosheets exhibits uniformly 10 nm thickness. The $WO_3$ nanowires and $WS_2$ nanosheets showed maximum capacities of 552 and $633mA\;h\;g^{-1}$, respectively, after 100 cycles. Especially, the capacity of $WS_2$ is significantly larger than the theoretical capacity ($433mA\;h\;g^{-1}$). We also examined the cycling performance using a larger size $WO_3$ and $WS_2$ nanocrystals, showing that the smaller size plays an important role in enhancing the capacity of LIBs. The larger capacity of $WS_2$ nanosheets than the theoretical value is ascribed to the lower charge transfer resistance of 2D nanostructures.

• Current Photovoltaic Research
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• v.4 no.1
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• pp.16-20
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• 2016

$Cu_2ZnSnS_4$ (CZTS) thin films were fabricated by successive electrodeposition of layers of precursor elements followed by sulfurization of an electrodeposited Cu-Zn-Sn precursor. In order to improve quality of the CZTS films, we tried to optimize the deposition condition of absorber layers. In particular, I have conducted optimization experiments by changing the Cu-layer deposition time. The CZTS absorber layers were synthesized by different Cu-layer conditions ranging from 10 to 16 minutes. The sulfurization of Cu/Sn/Zn stacked metallic precursor thin films has been conducted in a graphite box using rapid thermal annealing (RTA). The structural, morphological, compositional, and optical properties of CZTS thin films were investigated using X-ray diffraction (XRD), Field emission scanning electron microscopy (FE-SEM), Raman spectroscopy, and X-ray Flourescenece Spectrometry (XRF). Especially, the CZTS TFSCs exhibits the best power conversion efficiency of 4.62% with $V_{oc}$ of 570 mV, $J_{sc}$ of $18.15mA/cm^2$ and FF of 45%. As the time of deposition of the Cu-layer to increasing, the properties were confirmed to be systematically changed. And we have been discussed in detail below.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.35.1-35.1
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• 2011

New photovoltaic (PV) materials and manufacturing approaches are needed for meeting the demand for lower-cost solar cells. The prototypal thin-film photovoltaic absorbers (CdTe and $Cu(In,Ga)Se_2$) can achieve solar conversion efficiencies of up to 20% and are now commercially available, but the presence of toxic (Cd,Se) and expensive elemental components (In, Te) is a real issue as the demand for photovoltaics rapidly increases. To overcome these limitations, there has been substantial interest in developing viable alternative materials, such as $Cu_2ZnSnS_4$ (CZTS) is an emerging solar absorber that is structurally similar to CIGS, but contains only earth abundant, non-toxic elements and has a near optimal direct band gap energy of 1.4~1.6 ev and a large absorption coefficient of ${\sim}10^4\;cm^{-1}$. The CZTS absorber layers are grown and investigated by various fabrication methods, such as thermal evaporation, e-beam evaporation with a post sulfurization, sputtering, non-vacuum sol-gel, pulsed laser, spray-pyrolysis method and electrodeposition technique. In the present work, we report an alternative method for large area deposition of CZTS thin films that is potentially high throughput and inexpensive when used to produce monolithically integrated solar panel modules. Specifically, we have developed an aqueous chemical approach based on chemical bath deposition (CBD) with a subsequent sulfurization heat treatment. Samples produced by our method were analyzed by scanning electron microscopy, X-ray diffraction, transmission electron microscopy, absorbance and photoluminescence. The results show that this inexpensive and relatively benign process produces thin films of CZTS exhibiting uniform composition, kesterite crystal structure, and good optical properties. A preliminary solar cell device was fabricated to demonstrate rectifying and photovoltaic behavior.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.266.1-266.1
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• 2016

최근 태양전지에 대한 연구가 활발하기 이루어지고 있다. 그 중 본 연구에선 태양전지에 사용될 광흡수층에 대한 연구로 광흡수층은 광흡수계수와 밴드갭의 영향을 받고 SnS가 적합한 특성을 지니고 있다고 판단하여 이에 대한 합성과 특성에 대한 연구를 진행 하였다. SnxSy 박막은 Electrochemical deposition, Spray pyrolysis deposition, Furnace를 이용하는 등 다양한 방법이 있다. 이러한 방법들은 대부분 막질이 좋지 않다고 알려져 있는데 그 중 Furnace를 이용하는 방법은 간단하며 넓은 면적에 쉽게 증착이 가능하다는 장점이 있지만 S의 양과 온도에 민감하다. 본 연구에서는 Sn과 SnO 박막을 전구체로 사용하였으며 S의 양과 온도를 조절하여 로를 이용하여 합성하였다. 이에 대한 조성 및 구조적 특성을 분석하기 위해 XRD를 전기적 특성을 확인하기 위하여 Hall effect measurement를 통하여 측정하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.336-336
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• 2016

We have investigated magneto-transport properties in a MoS2 lateral spin-valve structures for different ferromagnetic CoFe electrode shapes and MoS2 channel lengths. For these devices, high quality and large-scale MoS2 thin films were synthesized through sulfurization of epitaxial MoO3 films and these sulfurized-MoO3 thin films properties are in good agreements with measurements on exfoliated MoS2 film. Magneto-transport measurements show a clear rectangular magnetoresistance signal of 0.16% and a spin polarization of 0.00012%. By using the one-dimensional spin diffusion equation, we extracted the spin diffusion length and coefficient, finding them to be 12 nm and $1.44{\times}10-3cm2/s$, respectively. These small values of magnetoresistance and spin polarization could be enhanced by appeasement of conductivity mismatch between the ferromagnet and semiconductor interface.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2017.05a
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• pp.167.1-167.1
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• 2017

전이금속 디칼코게나이드는 서로 다른 전이 금속원소와 칼코겐 원소의 결합으로 이루어진 층상 구조의 물질이다. 그 중 텅스텐 이황화물($WS_2$)은 전이금속 화합물로써 풍부한 매장량으로 인하여 가격면에서 매우 저렴하며, 높은 온도에서도 잘 견딜 수 있는 열 내구성이 강해 물 분해 반응에서 촉매로 사용될 수 있는 가능성이 제시되었다. 이러한 $WS_2$을 매장량이 적은 고비용의 백금계 촉매를 대체하기 위한 물질로서 많은 연구가 활발히 진행되고 있다. 본 연구에서는 $WO_3$ 콜로이드 용액을 전기 영동 및 황화 처리 이용하여 $WS_2$를 합성하여 수소 발생 반응(Hydrogen Evolution Reaction, HER)촉매로서의 가능성을 확인하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.03b
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• pp.17-17
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• 2010

Polycrystalline $CuInS_2$ thin films were performed from S/In/Cu Stacked elemental layer(SEL) method with post annealing. In thin method, the thin films were annealed in Vacuum of $10^{-3}$ torr or in S ambient. $CuInS_2$ thin films were manufctured by using the evaporation and the annealing with vacuum quartz furnace of sulfurization process was used in the vacuum chamber to the substrate temperature on the glass substrate the annealing temperature and characteristics thereof were investigated. The physical properties of the thin film were investigated under various fabrication conditions including the substrate temperature annealing time by XRD, FE-SEM, and Hall measurement system.

• Journal of Korea Foundry Society
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• v.40 no.6
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• pp.135-145
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• 2020

Aluminum cast iron has excellent oxidation resistance, sulfurization resistance, and corrosion resistance. However, the ductility at room temperature is insufficient, and at temperatures above 600?, the strength drops sharply and practicality is limited. In the case of heat-resistant cast iron, high-temperature materials containing Cr and Ni account for 30 to 50% or more. However, these high-temperature materials are expensive. Aluminum heat-resistant cast iron is considered as a substitute for expensive heat-resistant materials. Oxidation due to the aging temperature and holding time conditions increases more in 0 wt.% Al-cast iron than in 2 and 4 wt.% Al-cast iron according to oxidized weight and gravimetric oxide layer thickness measurements. As a result of observing the cross-section of the oxide layer, it was found to contain 0 wt.% of Al-cast iron silicon oxide-containing SiO₂ or Fe₂SiO₄ oxide film. In cast iron containing aluminum, the thickness of the internal oxide layer due to aluminum increases as the aging temperature and retention time increase, and the amount of the iron oxide layer generated on the surface decreases.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.98.2-98.2
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• 2010

$CuInS_2$ thin films were synthesized by sulfurization of Cu/In Stacked elemental layer deposited onto glass Substrates by vacuum furnace annealing at temperature 200[$^{\circ}C$]. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInS_2$ thin films with non-stoichiometry composition. $CuInS_2$ thin film was well made at the heat treatment 200[$^{\circ}C$] of SLG/Cu/In/S stacked elemental layer which was prepared by thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1 : 1 : 2. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM and hall measurement system. At the same time, carrier concentration, hall mobility and resistivity of the thin films was $9.10568{\times}10^{17}$ [$cm^{-3}$], 312.502 [$cm^2/V{\cdot}s$] and $2.36{\times}10^{-2}$ [${\Omega}{\cdot}cm$], respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.688-688
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• 2013

Al-doped ZnO (AZO) thin films have attracted a lot of attention as a cheap transparent conducting oxide (TCO) material that can replace the expensive Sn-doped In2O3. In particular, AZO thin films are widely used as a window layer of chalcogenide-based thin film solar cells such as Cu(In,Ga)Se2 and Cu2ZnSnS4 (CZTS). Mostly important requirements for the window layer material of the thin film solar cells are the high transparency and the low sheet resistance, because they influence the light absorption by the activelayer and the electron collection from the active layer, respectively. In this study, we prepared the AZO thin films by RF magnetron sputtering using a ZnO/Al2O3 (98：2wt%) ceramic target, and the effect of the sputtering condition such as the working pressure, RF power, and the working distance on the optical, electrical, and crystallographic properties of the AZO thin films was investigated. The AZO thin films with optimized properties were used as a window layer of CZTS thin film solar cells. The CZTS active layers were prepared by the electrochemical deposition and the subsequent sulfurization process, which is also one of the cost-effective synthetic approaches. In addition, the solar cell properties of the CZTS thin film solar cells, such as the photocurrent density-voltage (J-V) characteristics and the external quantum efficiency (EQE) were investigated.