• 한국전자통신학회논문지
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• 제11권11호
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• pp.1047-1052
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• 2016

본 논문에서는 인셋 급전한 패치의 접지면에 Complementary Single Loop Resonators(: CSLRs)을 배열한 안테나의 복사패턴을 개선하기 위하여 도체 반사판 사용을 제안하였다. 제안된 안테나의 반사판은 패치의 접지면으로부터 약 ${\lambda}_0/4$ 아래에 위치하고, 크기는 패치의 약 2배 정도이다. 유전율 2.5, 두께 0.787 mm인 마이크로스트립 기판을 사용하여 안테나를 설계, 제작하여 실험하였고, Finite Element Method(: FEM) 기반의 3D EM Solver인 HFSS를 사용하여 시뮬레이션 하였다. 실험결과, 반사판이 있는 경우의 안테나 공진주파수와 정합특성은 반사판이 없을 때와 거의 동일하게 변화가 없었으나, 복사패턴은 반사판에 의해 상당히 개선되었음을 확인하였다.

• 한국초전도ㆍ저온공학회논문지
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• 제15권4호
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• pp.15-20
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• 2013

We investigated the flux pinning properties of both 10 mol% Zr-and Sn-doped $YBa_2Cu_3O_{7-{\delta}}$ (YBCO) films with the same thickness of ~350 nm for a comparative purpose. The films were prepared on the $SrTiO_3$ (STO) single crystal substrate by the metal-organic deposition (MOD) process. Compared with Sn-doped YBCO film, Zr-doped one exhibited a significant enhancement in the critical current density ($J_c$) and pinning force density ($F_p$). The anisotropic $J_{c,min}/J_{c,max}$ ratio in the field-angle dependence of $J_c$ at 77 K for 1 T was also improved from 0.23 for Sn-doped YBCO to 0.39 for Zr-doped YBCO. Thus, the highest magnetic $J_c$ values of 9.0 and $2.9MA/cm^2$ with the maximum $F_p$ ($F_{p,max}$) values of 19 and $5GN/m^3$ at 65 and 77 K for H // c, respectively, could be achieved from Zr-doped YBCO film. The stronger pinning effect in Zr-doped YBCO film is attributable to smaller $BaZrO_3$ (BZO) nanoparticles (the average size ${\approx}28.4$ nm) than $YBa_2SnO_{5.5}$ (YBSO) nanoparticles (the average size ${\approx}45.0$ nm) incorporated in Sn-doped YBCO film since smaller nanoparticles can generate more defects acting as effective flux pinning sites due to larger incoherent interfacial area for the same doping concentration.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 제39회 하계학술대회
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• pp.1246-1247
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• 2008

With recent advanced in portable electric devices, wireless sensor, MEMS and bio-Mechanics device, the new typed power supply, not conventional battery but self-powered energy source is needed. Particularly, the system that harvests from their environments are interests for use in self powered devices. For very low powered devices, environmental energy may be enough to use power source. Therefore, in other to made piezoelectric energy harvesting device, PMN-PZT thick film was formed by the screen printing method on the Ag/Pd coated alumina substrate. The layer was 8 layers and slurry where a-terpineol, ethycellulose, ferro B-75001 as Vehicle, PMN-PZT powder used are fabricated by ball mill. The output power quality was be also investigated by changing the load resistance, weight and frequency. The made piezoelectric energy harvesting device was resulted from the conditions of 33$k{\Omega}$, 0.25g, 197Hz respectively. The thick film was prepared at the condition of 2.75Vrms, and its power was 230${\mu} W$ and its thickness was 56${mu}m$. The piezoelectric energy harvesting device output voltage was increased, when the load weight, load resistance was increasing and resonance frequency was diminishing. The other side, resonance frequency was diminished, when the weight was increasing. And output power was continuously it changed by load resistance, output voltage, weight and resonance frequency.

• 대한기계학회논문집A
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• 제34권4호
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• pp.475-480
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• 2010

가스터빈 블레이드는 터빈 가동 시 발생하는 고온화염으로부터 블레이드를 보호하고, 구조물의 표면 온도를 안전한 수준으로 낮추기 위하여 블레이드 표면에 열차폐 코팅(TBC; Thermal barrier coating)을 하여 사용하고 있다. 본 논문에서는 가스터빈 1단 블레이드에 적용되는 코팅 방식을 이용하여 코인형 시험편을 제작하였고 열화 온도 및 유지 시간의 변화에 따른 코팅 계면 산화물의 성장 거동을 분석하였다. 코팅 단면에 대하여 코팅 계면 산화물의 두께와 마이크로 비커스 경도를 측정하여 열화 특성을 평가 하였다. 또한 성분분석을 통하여 미세조직의 변화를 관찰함으로써 열차폐 코팅의 열적 열화특성을 평가하였다.

• 한국정보통신학회논문지
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• 제9권3호
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• pp.602-608
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• 2005

단상 단방향 형태의 표면 탄성파 필터 제작하기 위하여 Langasite 기판위에 빗살무늬 변환기를 형성시켜 모의실험을 수행하였으며, 전극재료로는 Al-Cu를 사용하였다. 모의실험을 바탕으로 입력단에는 IDT를 직렬형태로 연결시킨 block 형태로 하중을 가하는 전극 방법을 쓰고 출력단은 withdrawal 형태로 하중을 가하는 방법을 써서 제작하였다. 이를 바탕으로 단상 단방향 형태의 표면 탄성파 필터 적절한 임피던스 정합 조건도 얻고자 하였다. Langasite 기판 위에 형성시킨 입출력 빗살무늬 변환기 전극 수는 50쌍, 두께는 $5000{\AA}$으로 하였으며, 반사기 폭은 $3.6{\mu}m$이며, 전극 폭은 $2.4{\mu}m$이고, 전극과 반사기 사이의 간격은 $2.0{\mu}m$으로 하였다. 제작한 필터의 임피던스 정합 후 주파수 특성에서 중심 주파수는 190MHz, 대역폭은 7.7MHz 정도로 측정되었으며, 리플 특성은 0.4dB 이하이고, 정재파 비는 1.5정도로 측정되었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.63-63
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• 2010

Using both experimental and theoretical approaches, we have investigated the adsorption properties of an organic molecule (HATCN), which is used in OLEDs as an efficient hole injection layer, on metal and inert surfaces. We have also studied the structural and electronic properties of such interfaces and the dependences on deposition thickness. We have observed different trends in work function changes with different surfaces. Our photoelectron spectroscopic measurements have revealed an abnormal phenomenon in HATCN on a metal (Cu) surface: the work function decreases at lower coverage (~monolayer) of HATCN on a metal (Cu) surface, but it increases back and becomes higher than that of a bare Cu surface at higher coverage. It has, on the contrary, been observed that the work function of graphene surface just increases as the HATCN coverage increases. Our first-principles density functional calculations has not only verified our experimental observations, but also disclosed the underlying mechanism of such abnormal and different work function behaviors. We have found that the change in work function results from mutual polarization induced by the geometrical deformation and the bond dipole formed at the interface due to the charge redistribution. At low coverage of HAT-CN on Cu substrate, the former reduces the work function significantly by pulling down the vacuum level, while the latter tends to push up the vacuum level resulting in the work function increase.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.178-178
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• 2010

With the scaling down of ULSI(Ultra Large Scale Integration) circuit of CMOS(Complementary Metal Oxide Semiconductor)based electronic devices, the electronic devices become more faster and smaller size that are promising field of semiconductor market. However, very narrow line width has some disadvantages. For example, because of narrow line width, deposition of conformal and thin barrier is difficult. Besides, proportion of barrier width is large, thus resistance is high. Conventional PVD(Physical Vapor Deposition) thin films are not able to gain a good quality and conformal layer. Hence, in order to get over these side effects, deposition of thin layer used of ALD(Atomic Layer Deposition) is important factor. Furthermore, it is essential that copper atomic diffusion into dielectric layer such as silicon oxide and hafnium oxide. If copper line is not surrounded by diffusion barrier, it cause the leakage current and devices degradation. There are some possible methods for improving the these secondary effects. In this study, TaNx, is used of Tertiarybutylimido tris (ethylamethlamino) tantalum (TBITEMAT), was deposited on the 24nm sized trench silicon oxide/silicon bi-layer substrate with good step coverage and high quality film using plasma enhanced atomic layer deposition (PEALD). And then copper was deposited on TaNx barrier using same deposition method. The thickness of TaNx was 4~5 nm. TaNx film was deposited the condition of under $300^{\circ}C$ and copper deposition temperature was under $120^{\circ}C$, and feeding time of TaNx and copper were 5 seconds and 5 seconds, relatively. Purge time of TaNx and copper films were 10 seconds and 6 seconds, relatively. XRD, TEM, AFM, I-V measurement(for testing leakage current and stability) were used to analyze this work. With this work, thin barrier layer(4~5nm) with deposited PEALD has good step coverage and good thermal stability. So the barrier properties of PEALD TaNx film are desirable for copper interconnection.

• 한국진공학회지
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• 제17권1호
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• pp.46-50
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• 2008

Febry-Perot 프린지 패턴의 광 반사성을 가지고 있는 다공성 실리콘을 이용하여 암호화된 광학 이미지를 제작하였다. 암호화된 광학이미지 다공성 실리콘 샘플은 p-type 실리콘 웨이퍼 (boron-doped,<100> orientation, resistivity $0.8{\sim}1.2m{\Omega}-cm$)를 이용하여 빔 프로젝트의 광원과 전기화학적 식각을 통하여 만들어 졌다. 광학 이미지 다공성 실리콘 샘플은 전기화학적 식각과정에 빔 프로젝트의 광원에 의하여 톡특한 Febry-Perot 프린지 패턴을 나타낸다. 실리콘 웨이퍼의 광 반사성의 프린지 패턴을 퓨리에 변환을 통하여 유효광학두께를 측정하고 실리콘웨이퍼에 암호화 시킨 광학이미지를 제작하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.361.2-361.2
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• 2014

Transition metal dichalcogenides (MoS2, WS2, WSe2, MoSe2, NbS2, NbSe2, etc.) are layered materials that can exhibit semiconducting, metallic and even superconducting behavior. In the bulk form, the semiconducting phases (MoS2, WS2, WSe2, MoSe2) have an indirect band gap. Recently, these layered systems have attracted a great deal of attention mainly due to their complementary electronic properties when compared to other two-dimensional materials, such as graphene (a semimetal) and boron nitride (an insulator). However, these bulk properties could be significantly modified when the system becomes mono-layered; the indirect band gap becomes direct. Such changes in the band structure when reducing the thickness of a WS2 film have important implications for the development of novel applications, such as valleytronics. In this work, we report for the controlled synthesis of large-area (~cm2) single-, bi-, and few-layer WS2 using a two-step process. WOx thin films were deposited onto a Si/SiO2 substrate, and these films were then sulfurized under vacuum in a second step occurring at high temperatures ($750^{\circ}C$). Furthermore, we have developed an efficient route to transfer these WS2 films onto different substrates, using concentrated HF. WS2 films of different thicknesses have been analyzed by optical microscopy, Raman spectroscopy, and high-resolution transmission electron microscopy.

• 한국재료학회지
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• 제20권5호
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• pp.267-270
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• 2010

Sn doped $In_2O_3$ (ITO) and ITO/Cu/ITO (ICI) multilayer films were prepared on glass substrates with a reactive radio frequency (RF) magnetron sputter without intentional substrate heating, and then the influence of the Cu interlayer on the methanol gas sensitivity of the ICI films were considered. Although both ITO and ICI film sensors had the same thickness of 100 nm, the ICI sensors had a sandwich structure of ITO 50 nm/Cu 5 nm/ITO 45 nm. The ICI films showed a ten times higher carrier density than that of the pure ITO films. However, the Cu interlayer may also have caused the decrement of carrier mobility because the interfaces between the ITO and Cu interlayer acted as a barrier to carrier movement. Although the ICI films had two times a lower mobility than that of the pure ITO films, the ICI films had a higher conductivity of $3.6{\cdot}10^{-4}\;{\Omega}cm$ due to a higher carrier density. The changes in the sensitivity of the film sensors caused by methanol gas ranging from 50 to 500 ppm were measured at room temperature. The ICI sensors showed a higher gas sensitivity than that of the ITO single layer sensors. Finally, it can be concluded that the ICI film sensors have the potential to be used as improved methanol gas sensors.