• 한국항해항만학회지
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• 제27권5호
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• pp.505-511
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• 2003

본 논문에서는 UHF(470∼806 MHz) 대역에서 전송장치로 사용 가능한 DTV 중계기용 1 Watt 급 구동증폭단을 설계 및 제작하였다. 구동증폭단은 유전율 2.53, 두께 0.8 mm 기판을 사용하여, 전치증폭기 및 1 Watt 단위증폭기를 단일기판상에 집적화 하였다. 바이어스 전압 28 V DC, 전류 900 mA를 구동증폭단에 인가하였을 때, 470∼806 MHz의 대역에서 53.5 dB 이상의 이득, $\pm$0.5 dB의 이득 평탄도 및 -12 dB 이하의 입ㆍ출력 반사손실이 나타났다. 또한 출력전력이 1 Watt일 때 사용주파수 대역에서 2 MHz 주파수 간격의 두 신호를 구동증폭단에 입력하여 설계사양보다 우수한 48 dBc 이상의 상호변조왜곡 특성이 나타남을 알 수 있었다.

• Journal of Microbiology and Biotechnology
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• 제17권11호
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• pp.1826-1832
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• 2007

We describe the fabrication of poly(ethylene glycol) diacrylate (PEG-DA) hydrogel microstructures with a high aspect ratio and the use of hydrogel microstructures containing the enzyme ${\beta}$-galactosidase (${\beta}$-Gal) or glucose oxidase (GOx)/horseradish peroxidase (HRP) as biosensing components for the simultaneous detection of multiple analytes. The diameters of the hydrogel microstructures were almost the same at the top and at the bottom, indicating that no differential curing occurred through the thickness of the hydrogel microstructure. Using the hydrogel microstructures as microreactors, ${\beta}$-Gal or GOx/HRP was trapped in the hydrogel array, and the time-dependent fluorescence intensities of the hydrogel array were investigated to determine the dynamic uptake of substrates into the PEG-DA hydrogel. The time required to reach steady-state fluorescence by glucose diffusing into the hydrogel and its enzymatic reactions with GOx and HRP was half the time required for resorufin ${\beta}$-D-galactopyranoside (RGB) when used as the substrate for ${\beta}$-Gal. Spatially addressed hydrogel microarrays containing different enzymes were micropatterned for the simultaneous detection of multiple analytes, and glucose and RGB solutions were incubated as substrates. These results indicate that there was no cross-talk between the ${\beta}$-Gal-immobilizing hydrogel micropatches and the GOx/HRP-immobilizing micropatches.

• 한국항행학회논문지
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• 제24권2호
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• pp.142-147
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• 2020

본 논문에서는 WCDMA (1.92 ~ 2.17 GHz) 용 개방 종단된 슬롯을 가지는 소형화된 CPW 급전 폴디드 슬롯 안테나를 새롭게 제안하였다. 안테나의 소형화를 위해 개방 종단된 슬롯과 비대칭 접지면이 사용되었으며, 안테나의 크기는 35×70 ㎟, 두께는 1.6 mm, 유전상수가 4.3인 FR-4 기판에 설계 및 제작 되었다. 제안하는 안테나의 측정된 임피던스 대역폭(|S₁₁|≤-10dB)은 400 MHz (1.86 GHz ~ 2.26 GHz)를 얻어 충분히 사용하고자 하는 대역을 만족했다. 또한 안테나의 이득은 2 dBi이고, 방사패턴은 다이폴 안테나와 유사하게 E-Plane에서 8자 형태를 H-plane에서는 무지향 패턴을 보여 방향에 따른 수신 전계강도의 변화가 없어야하는 무선통신기기 및 이동통신단말기에 유용하게 활용이 될 수 있을 것으로 기대된다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.45-49
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• 2001

We have investigated physical and electrical properties of the Hf $O_2$/HfS $i_{x}$/ $O_{y}$ thin film for alternative gate dielectrics in the metal-oxide-semiconductor device. The oxidation of Hf deposited directly on the Si substrate results in the H $f_{x}$/ $O_{y}$ interfacial layer and the high-k Hf $O_2$film simultaneously. Interestingly, the post-oxidation N2 annealing of the H102/H1Si70y thin films reduces(increases) the thickness of an amorphous HfS $i_{x}$/ $O_{y}$ layer(Hf $O_2$ layer). This phenomenon causes the increase of the effective dielectric constant, while maintaining the excellent interfacial properties. The hysteresis window in C-V curves and the midgap interface state density( $D_{itm}$) of Hf $O_2$/HfS $i_{x}$/ $O_{y}$ thin films less than 10 mV and ~3$\times$10$^{11}$ c $m^{-2}$ -eV without post-metallization annealing, respectively. The leakage current was also low (1$\times$10-s A/c $m^2$ at $V_{g}$ = +2 V). It is believed that these excellent results were obtained due to existence of the amorphous HfS $i_{x}$/ $O_{y}$ buffer layer. We also investigated the charge trapping characteristics using Fowler-Nordheim electron injection: We found that the degradation of Hf $O_2$/HfS $i_{x}$/ $O_{y}$ gate oxides is more severe when electrons were injected from the gate electrode.e electrode.e.e electrode.e.

• 한국전기전자재료학회논문지
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• 제13권6호
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• pp.526-532
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• 2000

The paste on the glass or fabrication of the PDP(Plasma Display Panel) barrier rib was selectively etched using focused A $r_{+}$ laser(λ=514 nm) and Nd:YAG(λ=532, 266 nm) laser irradiation. The depth of the etched grooves increase with increasing a laser fluence and decreasing a laser beam scan speed. Using second harmonic of Nd:YAG laser(532 nm) the etching threshold laser fluence was 6.5 mJ/c $m^2$ for the sample of PDP barrier rib. The thickness of 180 ${\mu}{\textrm}{m}$ of the sample on the glass was clearly removed without any damage on the glass substrate by fluence of 19.5J/c $m^2$beam scan speed of 20${\mu}{\textrm}{m}$ /s. In order to increase the etch rate of the barrier rib material barrier rib samples heated by a resistive heater during laser irradiation. The heated sample has many defects and becomes to be fragile. This imperfection of the structure compared to the sample without heat treatment allows the effective etching by the focused laser beam. The etch rates were 65${\mu}{\textrm}{m}$/s and 270 ${\mu}{\textrm}{m}$/s at room temperature and 20$0^{\circ}C$, respectively.y.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2001년도 춘계학술발표회 초록집
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• pp.14-14
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• 2001

Nitride films such as TiN, CrN etc. deposited on glass by PVD processes have been developed for many industrial applications. These nitride films deposited on glass were widely used for not only decorative and optical coatings but also wear and corrosion resistance coatings employed as dies and molds made of glass for the example of lens forming molds. However, the major problem of nitride coatings on glass by PVD process is non-uniform film owing to pin-hole and micro crack. It is estimated that nonuniform coating is influenced by a different surface energy between metal nitrides and glass due to binding states. In this work, therefore, for the evaluation of nucleation and growth mechanism of nitride films on glass TiN and CrN film were synthesized on glass with various nitrogen partial pressure by unbalanced magnetron sputtering. Prior to deposition, for the examination of relationship between surface energy and film microstructure plasma pre-treatment process was carried out with various argon to hydrogen flow rate and substrate bias voltage, duty cycle and frequency by using pulsed DC power supply. Surface energy owing to the different plasma pre-treatment was calculated by the measurement of wetting angle and surface conditions of glass were investigated by X-ray Photoelectron Spectroscopy(XPS) and Atomic Force Microscope(AFM). The microstructure change of nitride films on glass with increase of film thickness were analyzed by X-Ray Diffraction(XRD) and Scanning Electron Microscopy(SEM).

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.41.2-41.2
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• 2011

Recently, scaling down of ULSI (Ultra Large Scale Integration) circuit of CMOS (Complementary Metal Oxide Semiconductor) based electronic devices become much faster speed and smaller size than ever before. However, very narrow interconnect line width causes some drawbacks. For example, deposition of conformal and thin barrier is not easy moreover metallization process needs deposition of diffusion barrier and glue layer. Therefore, there is not enough space for copper filling process. In order to overcome these negative effects, simple process of copper metallization is required. In this research, Cu-V thin alloy film was formed by using RF magnetron sputter deposition system. Cu-V alloy film was deposited on the plane $SiO_2$/Si bi-layer substrate with smooth and uniform surface. Cu-V film thickness was about 50 nm. Cu-V layer was deposited at RT, 100, 150, 200, and $250^{\circ}C$. XRD, AFM, Hall measurement system, and XPS were used to analyze Cu-V thin film. For the barrier formation, Cu-V film was annealed at 200, 300, 400, 500, and $600^{\circ}C$ (1 hour). As a result, V-based thin interlayer between Cu-V film and $SiO_2$ dielectric layer was formed by itself with annealing. Thin interlayer was confirmed by TEM (Transmission Electron Microscope) analysis. Barrier thermal stability was tested with I-V (for measuring leakage current) and XRD analysis after 300, 400, 500, 600, and $700^{\circ}C$ (12 hour) annealing. With this research, over $500^{\circ}C$ annealed barrier has large leakage current. However V-based diffusion barrier annealed at $400^{\circ}C$ has good thermal stability. Thus, thermal stability of vanadium-based thin interlayer as diffusion barrier is good for copper interconnection.

• 한국광학회지
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• 제21권4호
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• pp.175-178
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• 2010

본 논문에서는 은-산화막-은 구조의 박막형 에탈론 기반의 투과형 컬러필터를 제안하고 구현하였다. 제안된 박막형 소자는 전자빔 리소그래피 방식에 비해 넓은 유효면적을 갖고 적외선 대역에서의 차단 특성이 우수하다. 또한 금속의 분산특성 및 두께 그리고 기판의 영향 등을 고려하기 위하여 FDTD 방법을 도입함으로써 제안된 소자를 설계 및 분석하였다. 설계된 청색, 녹색, 적색 필터 소자의 산화막 캐비티 두께는 각각 100, 130, 160 nm였으며, 은 박막의 두께는 25 nm였다. 얻어진 측정결과를 살펴보면, 중심파장은 각각 480, 555, 650 nm, 대역폭은 각각 약 120, 100, 120 nm였으며 투과율은 약 60%였다. 그리고 빔의 입사각에 대한 상대적인 투과율 변화율은 ~1%/degree 였다.

• 대한전자공학회논문지
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• 제25권11호
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• pp.1367-1372
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• 1988

본 논문은 최적의 고출력용 (GaAl) As/GaAs CSP-LOC 레이저 다이오드 구조를 설계하기 위하여 컴퓨터 시뮬레이션 하였다. 실험 데이터를 근거로한 레이저다이오드의 설계변수로 각 층의 두께, 흡수계수, 스트라이프 폭등이 사용되었고 활성층(d2)와 광 도파로층(d3)의 두께가 각각 0.08um, 0.5um일때와 0.1um, 0.4um일때 최적의 안정된 고출력용 CSP-LOC 구조를 얻었다. 따라서 본 노문에서는 실용적인 반도체레이저의 컴퓨터 시뮬레이션 프로그램을 개발하였고 임의의 재료를 갖는 CSP-LOC 구조에 이 프로그램의 적용이 가능하다.

• 한국자기학회지
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• 제10권3호
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• pp.118-122
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• 2000

절연층으로 $Al_2$ $O_3$를 사용한 스핀의존성 터널링 접합에서 절연층의 두께가 자기저항특성에 미치는 효과에 대해 조사하였다. 스핀 의존성 터널링 접합은 3-gun 스퍼터링 시스템에서 4$^{\circ}$tilt-cut (111)Si 기판 위에 증착하였다. 절연층으로 사용된 $Al_2$ $O_3$는 Al을 1~3 nm로 증착한 후에 대기중에서 자연산화시켜 얻었고, 상부와 하부 강자성체 전극은 NiFe와 Co를 사용하였다. 자기저항비는 절연층의 두께가 2 nm인 터널링 접합에서 약 14 %로 최대값을 보였고 접합에 걸리는 터널링 전압이 증가함에 따라 최대 자기저항비는 급격히 감소하는 경향을 보였다.