• 한국재료학회지
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• 제2권3호
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• pp.180-190
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• 1992

ZMR공정에서 발생하기 쉬운 폴리실리콘의 엉김현상(agglomeration), 슬림, 그리고 실리콘기판이 국부적으로 녹는 현상 등을 방지하기 위한 방법과 재결정화된 박막의 질을 향상시키기 위하여 폴리실리콘과 보호 산화막(capping oxide)두계를 변화시킨 실험 결과를 서술한다. 폴리실리콘의 엉김현상은 폴리실리콘과 보호 산화막 그리고 폴리실리콘과 매몰 산화막(buried oxide)의 계면에서의 wetting각과 관계되는데, 엉김현상을 방지하기 위해서는 암모니아 가스 분위기에서 $1100^{\circ}$C, 3시간 동안 열처리하여 폴리실리콘과 보호 산화막 그리고 폴리실리콘과 매몰 산화막의 계면에 질소를 주입시키면 된다. 실리콘 기판의 뒷면이 국부적으로 녹아 SOI구조가 파괴되는 현상과 슬립은 실리콘 기판의 뒷면을 모래타격(sandblast)하여 약 $20{\mu}m$의 거칠기를 가지도록 했을때 방지할 수 있었다. 재결정화된 폴리실리콘의 두께가 두꺼워짐에 따라 재결정화된 박막에서 subboundary의 간격은 넓어지고, 재결정화된 실리콘 두께의 균일성은 보호 산화막이 두꺼울수록 향상된다. 폴리실리콘의 두께를 $1{\mu}m$로 하였을때 subboundary의 간격은 약 $70-120{\mu}m$정도였고 폴리실리콘의 두께가 $1{\mu}m$이고 보호산화막의 두께가 $2.5{\mu}m$일때, 재결정화 후 실리콘의 두게 균일도는 약 ${\pm}200{\AA}$정도였다.

• KIEE International Transactions on Electrophysics and Applications
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• 제4C권3호
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• pp.106-110
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• 2004

The operating condition of the OLED (organic light-emitting diode) is very sensitive to electrode thickness properties. The electrode thickness is a significant issue in the construction of OLEDs because of its transparency, high conductivity and high efficiency as an injector into organic materials. We carried out a systematic study to optimize the electrode thickness conditions in Indiumtin oxide (ITO), Molybdenum (Mo) and Aluminum (Al). Further, we measured electrode thickness under standard conditions [ITO 1500$\AA$, Mo 2600$\AA$, Al 1500$\AA$]. We also evaluated power consumption. In addition, we analyzed substrate uniformity with IVL measurement results. From these results, it is known that the electrode thickness should be optimized in order to accomplish optimal power efficiency.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.313-316
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• 2003

The lead zirconate titanate, $Pb(Zr_{0:52}Ti_{0:48})O_3$, films of $0.5\;{\mu}m,\;1\;{\mu}m$ and $2\;{\mu}m$ thickness were fabricated on $Pt/Ti/SiO_2/Si$ substrate by the rf magnetron sputtering method. The PZT films were annealed using by a rapid thermal annealing (RTA) method. The thickness dependence of the film structure, dielectric properties, Polarization-electric field hysteresis loops and capacitance-voltage characteristics were investigated over the thickness range of $0.5\;{\mu}m,\;1\;{\mu}m$ and $2\;{\mu}m$. According to the XRD patterns of the films, (110) peak intensity increases with film thickness increased. The increase of PZT films thickness leads to the decrease of the remanent polarization and the dielectric constant.

• Journal of Magnetics
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• 제2권1호
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• pp.16-21
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• 1997

Those were investigated, the crystallographic, morphological, and magnetic properties of barium ferrite film (SiO2/Si substrate) prepared by sol-gel dip coating. Appropriate sol was prepared by dissolvin barium and iron nitrate in ethylene glycol at 80$^{\circ}C$. To obtain the films, thermally oxidized p-type silicon substrate with (111) of crystallographic orientation were dipped into the sol, dried at 250$^{\circ}C$ to remove organic material, and heated at 800$^{\circ}C$ for 3 hours in air for the crystallization of barium ferrite. It was found that the particles of barium ferrite formed on the substrate exhibited needle-like shape placing parallel to the substrate and its c-axis is long axis direction. There was tendency that the coercive force in horizontal direction to the substrate was higher than that in vertical direction to it. This tendency was profound in large thickness.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 하계학술대회 논문집 C
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• pp.1178-1180
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• 1995

In this paper, structual, optical and electrical properties of CdTe thin films prepared by electron beam evaporation method were studied. The crystal structure of CdTe films deposited at substrate temperature of $100{\sim}400^{\circ}C$ was zincblend type with preferential orientation of the (111)plane parallel to the substrate. The result of optical absoption and transmittance show that solar radiation with energy larger than band gap is almost completely absorbed within an about $2{\mu}m$ thickness of the evaporated CdTe layer and optical band gap of the CdTe film was larger with increasing substrate temperature. The resistivity of CdTe films deposited on the glass substrate was about $10^5{\sim}10^7{\Omega}cm$.

• Current Photovoltaic Research
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• 제8권1호
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• pp.1-5
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• 2020

The most important factor in enhancing the performance of an optical device is to minimize reflection and increasing transmittance of light for a broad wavelength range. The choice of appropriate coating material is crucial in decreasing reflection losses at the substrate. The purpose of this review is to highlight anti-reflection coating (ARC) materials that can be applied to silicon solar cell and glass substrate for minimizing reflection losses. The optical and electrical behavior of ARC on a substrate is highly dependent on thickness and refractive index (RI) of ARC films that are being deposited on it. The coating techniques and performance of single and multi-layered ARC films after coated on a substrate in a wide range of wavelength spectrum will be studied in the paper.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1991년도 추계학술대회 논문집
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• pp.12-16
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• 1991

Cadmium sulphide films with thickness of 0.6∼1.2$\mu\textrm{m}$ were deposited onto corning 7059 glass substrate under a vacuum of 5${\times}$10$\^$-6/ Torr. Source and substrate temperature ranges used were 800∼1100$^{\circ}C$ and 100∼200$^{\circ}C$, respectively. The microstructures and semiconducting properties of the films were studied using X-ray diffraction, UV-VIS-IR spectrophotometer and Hall measurement unit. Electrical resistivity and optical transmission of the CdS films decrease with an increase in source temperature while they increase with an increase in substrate temperature. The resistivity of the film evaporated at 1100$^{\circ}C$ varied from 7${\times}$10$^3$ohm-cm at the substrate temperature of 100$^{\circ}C$ to 2${\times}$10$\_$6/ohm-cm at 190$^{\circ}C$. All the films had hexagonal structure and strong texture with c-axis of grains normal to the substrate glass.

• 한국전기전자재료학회논문지
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• 제17권3호
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• pp.329-332
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• 2004

ZnO thin films were grown with different plume-substrate angles by pulsed laser deposition (PLD) to control the amount of ablated species arriving on a substrate per laser shot. The angles between plume propagation direction and substrate plane (P-S angle) were 0$^{\circ}$, 45$^{\circ}$ and 90$^{\circ}$. The growth time was changed in order to adjust film thickness. From the XRD pattern exhibiting a dominant (002) and a minor (101) XRD peak of ZnO, all films were found to be well oriented along c-axis. From the AFM image, it was found that the grain size of ZnO thin film was increased, as P-S angle decreased. UV intensity investigated by PL (Photoluminescence) increased as P-S angle decreased.

• 산업기술연구
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• 제35권
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• pp.89-94
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• 2015

Graphene is a carbon-based two dimensional honeycomb lattice with monoatomic thickness and has attracted much attention due to its superior mechanical, electronic, and physical properties. Here, we present a synthesis of high quality graphene on Pt substrate using a chemical vapor deposition (CVD). We optimized synthesis condition with various parameters such as synthesis temperature, time, and cooling rate. Based on the results, we concluded that graphene synthesis is driven by mainly carbon adsorption on surface rather than precipitation of carbon which is dominant in other metal substrate. In addition, Pt substrate can be repeatedly used several times with high quality graphene.

• 한국표면공학회지
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• 제28권6호
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• pp.343-351
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• 1995

Titanium nitride films have been prepared on various substrates (silicon wafer, HSS) by cathode arc ion plating process to measure microhardness, adhesion and wear-resistant behaviors by changing the substrate bias voltages (0∼-300V), thickness and roughness. Microhardnesses were measured by micro vickers hardness tester, the adhesion strengths were evaluated by acoustic signals through the scratch test with incremental applied load. As the substrate bias voltages were increased, the ｛111｝ orientation was predominant, the microhardnesses and adhesion strengths of tool steel were observed to be stronger than those of without subatrate bias voltage. Adhesion strengths of the substrate bias were 4-7 times higher than those of without the substrate bias, confirmed by SEM with EDX. Wear resistances were used pin-on-disk tribotester and TiN costing reduced the abrasive wear. As the substrate bias was increased, the weight loss and the friction coefficient was decreased.