• Progress in Superconductivity and Cryogenics
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• v.24 no.2
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• pp.19-22
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• 2022

We studied the effect of substrate-induced strain state on the superconducting transition in GdBa₂Cu₃O_7-x(GdBCO)/La_0.7Sr_0.3MnO₃ (LSMO) bilayers deposited on a LaAlO₃ (LAO) substrate. The stain state of LSMO is controlled by increasing the thickness from 20 nm to 80 nm. Analyses on the extended X-ray absorption fine structure (EXAFS) measurements reveal difference in the direction of MnO₆ octahedral distortion depending on the LSMO thickness, which leads to a difference in anisotropy of magnetization of LSMO layer. The superconducting transitions of our system are strongly correlated with the magnetic anisotropy accompanied by the MnO₆ octahedron distortion in a specific direction. This result suggests the possibility of improving the superconducting transition in the GdBCO/LSMO bilayer system by controlling the degree of competition between superconductivity and ferromagnetism via adjusting strain state in the LSMO layer.

• Korean Journal of Materials Research
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• v.23 no.1
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• pp.35-40
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• 2013

In this study, the influence on the surface passivation properties of crystalline silicon according to silicon wafer thickness, and the correlation with a-Si:H/c-Si heterojunction solar cell performances were investigated. The wafers passivated by p(n)-doped a-Si:H layers show poor passivation properties because of the doping elements, such as boron(B) and phosphorous(P), which result in a low minority carrier lifetime (MCLT). A decrease in open circuit voltage ($V_{oc}$) was observed when the wafer thickness was thinned from $170{\mu}m$ to $50{\mu}m$. On the other hand, wafers incorporating intrinsic (i) a-Si:H as a passivation layer showed high quality passivation of a-Si:H/c-Si. The implied $V_{oc}$ of the ITO/p a-Si:H/i a-Si:H/n c-Si wafer/i a-Si:H/n a-Si:H/ITO stacked layers was 0.715 V for $50{\mu}m$ c-Si substrate, and 0.704 V for $170{\mu}m$ c-Si. The $V_{oc}$ in the heterojunction solar cells increased with decreases in the substrate thickness. The high quality passivation property on the c-Si led to an increasing of $V_{oc}$ in the thinner wafer. Short circuit current decreased as the substrate became thinner because of the low optical absorption for long wavelength light. In this paper, we show that high quality passivation of c-Si plays a role in heterojunction solar cells and is important in the development of thinner wafer technology.

• Korean Journal of Materials Research
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• v.8 no.6
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• pp.493-498
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• 1998

CdTe films were deposited by close spaced sublimation with various substrate temperatures, cell areas, and thicknesses of CdTe and ITO layers and their effects on the CdS/CdTe solar cells were investigated. The resistivity of CdTe layers employed in this study was 3$\times$ $10^{4}$$\Omega$cm For constant substrate temperature the optimum substrate ternperature for CdTe deposition was $600^{\circ}C$. To obtain larger grain size and more compact microstructure, CdTe film was initially deposited at 62$0^{\circ}C$, and then deposited at 54$0^{\circ}C$. The CdTe film was annealed at 62$0^{\circ}C$ and $600^{\circ}C$ sequentially to maintain the CdTe film quality. The photovoitaic cell efficiency improved by the "two-wave" process. For constant substrate temperature, the optimum thickness for CdTe was 5-6$\mu m$. Above 6$\mu m$ CdTe thickness, the bulk resistance of CdTe film degraded the cell performance. As the cell area increased the $V_{oc}$ remained almost constant, while $J_{sc}$ and FF strongly decreased because of the increase of lateral resistance of the ITO layer. The optimum thickness of the ITa layer in this study was 300~450nm. In this experiment we obtained the efficiency of 9.4% in the O.5cm' cells. The series resistance of the cell should be further reduced to increase the fill factor and improve the efficiency.

• Textile Coloration and Finishing
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• v.35 no.4
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• pp.196-205
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• 2023

Water-dispersed pigment is on-going study for without air pollution in the textile and print industry. Primer treatment is essential for the substrate to improve the printing quality of eco-friendly water-dispersed pigment ink. Otherwise in the case of untreated primer, the water-dispersed pigment ink will dry onto the surface and cause defective images. This study was conducted on film substrate coating (primer) to fix eco-friendly water-dispersed pigment ink on film substrate. The drying, bleeding, and color strength of the pigment ink were examined depending on the composition and mixing ratio of the coating solution. The mixing ratio of silica gel in the coating film is increased to 0, 0.5, 1, 2 and 3 and results that DK-1-3 of silica gel ratio of 1 showed the lowest bleeding such as 52%, the letter thickness of 0.76mm and DK-1-5 of SG ratio of 3 showed the highest bleeding such as 304%, the letter thickness of 2.02mm. The mixing ratio of SPA in the coating film is increased to 2.5, 5, 7.5, SPA ratio of 7.5 has a bleeding ratio of 9% and letter thickness of 0.544mm. It showed the closest value to 0.5mm. According to the result, the optimal mixing ratio of binder, polymer coagulant, silica gel is 100:7.5:1.

• Progress in Superconductivity
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• v.9 no.1
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• pp.102-106
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• 2007

YBCO films have been synthesized using a spray pyrolysis method. We used nitrates of Y, Ba, Cu as precursors. Deposition was made on $LaAlO_3$ (100) single crystal substrate by spraying the mist of aqueous precursor solution generated by a concentric nozzle. The distance between concentric nozzle and substrate was 15 cm. C-axis oriented films were obtained at deposition temperature of $740{\sim}800^{\circ}C$ and working pressure of 20 Torr. Oxygen partial pressure was 3 Torr and substrate was transported with the speed ranging from 0.23 cm/min to 0.7 cm/min by reel to reel. Scanning electron microscope (SEM) and X-ray diffraction (XRD) observation revealed that films are smooth and highly textured with (001) planes parallel to substrate. Highest critical current density (Jc) was $1.38\;MA/cm^2$ at 77K and self-field for the film with a thickness of $0.5\;{\mu}m$ prepared at a substrate temperature of $780^{\circ}C$ and $PO_2\;=3\;Torr$. The effect of temperature on the microstructure and YBCO phase formation will be discussed.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.47 no.10
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• pp.67-73
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• 2010

In this paper, the effect of a finite substrate on the mutual coupling of a pair of microstrip patch antennas along the H -plane is investigated. The mutual coupling of a pair of microstrip patch antennas can be reduced using the interference effect due to the phase difference by a variety of routes of the surface wave. In the case of the substrate with $\varepsilon_r$=10 and thickness of 3.2 mm, the mutual coupling is reduced by 4.85 dB on the substrate size with the strong mutual coupling, while the mutual coupling is reduced by 34.28 dB on the substrate size with the weak mutual coupling when the distance between the antenna centers is varied from 0.5 $\lambda_0$ to 1.0 $\lambda_0$. In the case of optimization substrate size, the decreasing rate of the mutual coupling with the increase of the distance between the antenna centers is very large. Good agreements between the image method and full wave simulation results are obtained.

• Mycobiology
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• v.43 no.4
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• pp.423-434
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• 2015

The study was conducted to compare the effects of different agro-wastes on the growth, yield, and nutritional composition of oyster mushrooms Pleurotus ostreatus (PO) and Pleurotus cystidiosus (PC). Seven substrate formulas including sawdust (SD), corncob (CC), sugarcane bagasse (SB) alone and in combination of 80 : 20, 50 : 50 ratio between SD and CC, SD and SB were investigated. The results indicated that different substrate formulas gave a significant difference in total colonization period, characteristics of fruiting bodies, yield, biological efficiency (BE), nutritional composition and mineral contents of two oyster mushrooms PO and PC. The results showed that increasing CC and SB reduced C/N ratio, and enhanced some mineral contents (Ca, P, and Mg) of substrate formulas. The increased amount of CC and SB of substrate formulas enhanced protein, ash, mineral contents (Ca, K, Mg, Mn, and Zn) of fruiting bodies of both mushrooms. Substrates with 100% CC and 100% SB were the most suitable substrate formulas for cultivation of oyster mushrooms PO and PC in which they gave the highest values of cap diameter, stipe thickness, mushroom weight, yield, BE, protein, fiber, ash, mineral content (Ca, K, and Mg) and short stipe length. However, substrate formula 100% CC gave the slowest time for the first harvest of both mushrooms PO and PC (46.02 days and 64.24 days, respectively). It is also found that the C/N ratio of substrate formulas has close correlation with total colonization period, mushroom weight, yield, BE and protein content of mushroom PO and PC.

• Korean Journal of Materials Research
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• v.34 no.1
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• pp.55-62
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• 2024

Fluorine-doped tin oxide (FTO) has been used as a representative transparent conductive oxide (TCO) in various optoelectronic applications, including light emitting diodes, solar cells, photo-detectors, and electrochromic devices. The FTO plays an important role in providing electron transfer between active layers and external circuits while maintaining high transmittance in the devices. Herein, we report the effects of substrate rotation speed on the electrical and optical properties of FTO films during ultrasonic spray pyrolysis deposition (USPD). The substrate rotation speeds were adjusted to 2, 6, 10, and 14 rpm. As the substrate rotation speed increased from 2 to 14 rpm, the FTO films exhibited different film morphologies, including crystallite size, surface roughness, crystal texture, and film thickness. This FTO film engineering can be attributed to the variable nucleation and growth behaviors of FTO crystallites according to substrate rotation speeds during USPD. Among the FTO films with different substrate rotation speeds, the FTO film fabricated at 6 rpm showed the best optimized TCO characteristics when considering both electrical (sheet resistance of 13.73 Ω/□) and optical (average transmittance of 86.76 % at 400~700 nm) properties with a figure of merit (0.018 Ω^-1).

• Journal of the Korean Professional Engineers Association
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• v.21 no.1
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• pp.5-12
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• 1988

The purpose of this paper is to investigate on the optimum coating thickness layer of TiC-Al$_2$O$_3$ coated cemented carbide tool. Chemical Vapor Deposition (CVD) of a thick film of TiC-A1$_2$O$_3$ on a cemented carbide produces an intermediate layer, $1.5mutextrm{m}$, 4.5${\mu}{\textrm}{m}$, 7.5${\mu}{\textrm}{m}$ 10.5${\mu}{\textrm}{m}$, 4 kind of TiC between the substrate and the $1.5mutextrm{m}$ constant thick A1$_2$O$_3$ coating. Experiments were carried out with the test relationship between coating thickness and shear angle, surface roughness, cutting force, microphotograph of crater wear, flank wear, tool life. From the experimental results, it was found that the optimum coating thickness of TiC-A1$_2$O$_3$ is 6${\mu}{\textrm}{m}$. Although the coating thickness layer 9${\mu}{\textrm}{m}$. 12${\mu}{\textrm}{m}$ have a much loger tool wear than an 3${\mu}{\textrm}{m}$, 6${\mu}{\textrm}{m}$ coating tool in cutting condition feed 0.05mm/rev, and the condition of feed 0.2mm/rev, 0.3mm/rev has upon in the shot time phenomenon of chipping.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.287-290
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• 1998

It was investigated that the dielectric properties of ferroelectric materials using PZT-5A and PZT thin films. PZT-5A was 20mm diameters, 0.71mm, 0.51mm and 0.41mm thickness respectively and having c-axis preferred orientation. Electrodes(Al) were deposited by evaporation method. PZT thin film was deposited on Pt/SiO$_2$/Si substrate by RF magnetron sputtering method, and annealed at 750$^{\circ}C$ with RTA. Dielectric constants were measured automatically by computer measuring system. Dielectric constants were changed rapidly from 817 to 888 in 0.41mm thickness PZT-5A, 823 to 890 in 0.51mm and 822 to 839 in 0.71mm as the electric field grown. In the case of PZT thin film, dielectric constants were changed from 724 to 1173 in 4500${\AA}$ thickness, 721 to 1204 in 5500${\AA}$ thickness and 811 to 1407 in 7000${\AA}$ thickness.