• Korean Journal of Materials Research
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• v.19 no.4
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• pp.224-227
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• 2009

Nanofabrication is an essential process throughout industry. Technologies that produce general nanofabrication, such as e-beam lithography, dip-pen lithography, DUV lithography, immersion lithography, and laser interference lithography, have drawbacks including complicated processes, low throughput, and high costs, whereas nano-transfer printing (nTP) is inexpensive, simple, and can produce patterns on non-plane substrates and multilayer structures. In general nTP, the coherency of gold-deposited stamps is strengthened by using SAM treatment on substrates, so the gold patterns are transferred from stamps to substrates. However, it is hard to apply to transfer other metallic materials, and the existing nTP process requires a complicated surface treatment. Therefore, it is necessary to simplify the nTP technology to obtain an easy and simple method for fabricating metal patterns. In this paper, asnTP process with poly vinyl alcohol (PVA) mold was proposed without any chemical treatment. At first, a PVA mold was duplicated from the master mold. Then, a Mo layer, with a thickness of 20 nm, was deposited on the PVA mold. The Mo deposited PVA mold was put on the Si wafer substrate, and nTP process progressed. After the nTP process, the PVA mold was removed using DI water, and transferred Mo nano patterns were characterized by a Scanning electron micrograph (SEM) and Energy Dispersive spectroscopy (EDS).

• Journal of the Korean Magnetics Society
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• v.9 no.2
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• pp.91-97
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• 1999

YIG $(Y_3Fe_5O_{12})$ films with 4~80 ${\mu}{\textrm}{m}$ thickness were epitaxially grown on GGG $(Gd_3Ga_5O_{12})$ substrates by LPE (liquid phase epitaxy) techniques. Using various melts having different chemical composition the growth temperature was varied as a parameter. Growth rate, surface morphology, chemical composition, lattice constant, saturation magnetization, and magnetic resonance of the films were investigated. Lattice mismatch between the substrate and film Δa, saturation magnetization, and magnetic resonance line width ΔH increased, decreased, and increased, respectively, as undercooling temperature ΔT increased. The films grown by using the melt with larger R$_1$and smaller R$_3$had smaller ΔH. The major origin of the increase of ΔH was the increase of Δa. It is considered that the magnetic field in the film became locally inhomogeneous with the increase of Δa due to the increase of inhomogenity in stress distribution to the film depth direction. Therefore, in order to grow YIG films with small microwave loss it is necessary to grow films at small ΔT using the melt with large R$_1$and small R$_3$resulting in a small Δa.

• Journal of the Korean Vacuum Society
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• v.7 no.4
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• pp.355-360
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• 1998

Epitaxial $Ba_{0.5}Sr_{0.5}TiO_3$thin films of two different thickness (~250 $\AA$ and ~1340 $\AA$) on MgO(001) prepared by a pulsed laser deposition method were studied by synchroton x-ray scattering measurements. The film initially grew on MgO(001) with a cube-on-cube relationship, maintaining it during further growth. As the film grew, the surface of the film became rough significantly, but the interface between the film and the substrate seemed to have changed little. In the early stage, the film was highly strained in a tetragonal structure with the longer axis parallel to the surface normal direction. As the growth proceeded further, it was mostly relaxed to a cubic structure with the lattice parameter of the bulk value and the mosaic distribution improved significantly in both in-plane and out-of-plane directions.

• Korean Journal of Materials Research
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• v.3 no.2
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• pp.166-174
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• 1993

Abstract The crack resistance of PSG(Phosphosilicate Glass) and PE-SiN(Plasma Enhanced CVD S${i_2}{N_4}$)films deposited on aluminium thin films on Si substrate was analyzed in this study. PSG was deposited by AP-CVD and PE- SiN by PE-CVD. All the films underwent repeated heat cycles at 45$0^{\circ}C$for 30 min. Crack formation and development were examined between each heat cycle. The crack behavior was found to be closely related to the stresses in the films. The stress induced by the difference in thermal expansion behavior between the passivation layers and underlying aluminum film may cause the crack. Crack resistance decreases as the thickness of PSG films increases due to the high tensile stress of the films. Phosphorus in the PSG films releases tensile stress and consequently the stress of the films tends to show compressive stress. As a result, crack resistance increased as the concentratin of P in the PSG films increased. Crack resistance in the PE-SiN films also increased with compressive stress. An experimental model to predict crack generation in the PSG and PE-SiN films during heat cycle was suggested.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.12 no.1
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• pp.62-68
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• 1999

Ferroelectric $Sr_{0.7}/B_{2.3}(Ta_{1-x}Nb_x)_2O_9$(x=0, 0.1, 0.2, 0.3) thin films were deposited on $Pt/SiO_2/Si$ substrate by MOD(Metalorganic Decomposition) process. Metal carboxylate and metal alkoxide were used as precursors, and 2-methoxyethanol, xylene as solvents. After spin coating, thin films were pre-annealed at $400^{\circ}C$, followed by RTA(Rapid Thermal Annealing) and final annealing at $800^{\circ}C$ in oxygen atmosphere. These procedures were repeated three times to obtain thin films with the thickness of $2000{\AA}$. To enhance the nucleation and growth of layered-perovskite phase, thin films were rapid-thermally annealed above $720^{\circ}C$ in oxygen atmosphere. As RTA temperature increased, fluorite phase was transformed to layered-perovskite phase. And the change of Nb contents affected dielectric / electrical properties and microstructure. The ferroelectric characteristics of $Sr_{0.7}/B_{2.3}(Ta_{1-x}Nb_x)_2O_9$ thin film were Pr=8.67 $\mu{C}/cm^2$, Ec=62.4kV/cm and $I_{L}=1.4\times10^{-7}A/cm^2$ at the applied voltage of 5V, respectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.3
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• pp.292-298
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• 2011

In this paper, a voltage controlled injection-locked oscillator(VC-ILO) is proposed for wideband applications. From the control of the free-running frequency by a varactor diode, the wide frequency locking range can be obtained for low-level injected signals. The proposed VC-ILO is implemented on an FR-4 substrate with a thickness of 0.8 mm. The free-running frequencies of the oscillator is 2.39~2.52 GHz at the control voltage of 0~5 V. While the frequency locking range of over 50 MHz is presented for -10 dBm injected signal level at a fixed frequency, the locking range of over 90 MHz can be achieved for -30 dBm by controlling the free-running frequency.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.7
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• pp.774-783
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• 2012

In this paper, a periodically corrugated transmission line is proposed. The proposed transmission line can reduce crosstalk between transmission lines. The corrugated transmission line can adjust the amount of inductive coupling and capacitive coupling equally. Thus, the crosstalk is effectively reduced because the inductive coupling and capacitive coupling cancel each other. The corrugated transmission line is fabricated on RO4003 substrate with a dielectric constant of 3.38 and a thickness of 0.508 mm. The simulated far-end crosstalks of conventional transmission line and corrugated transmission line with a period of A=1 mm have maximum values of -3.6 dB and -22 dB, respectively, up to 30 GHz. Measurement results showed that far-end crosstalks of the conventional and corrugated transmission line have maximum values of -6.3 dB and -20.5 dB, respectively, up to 30 GHz.

• Journal of the Korean Ceramic Society
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• v.32 no.5
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• pp.617-625
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• 1995

In order to reduce reflectance of soda-lime glass having average reflectance of 7.35% and refractive index of 1.53, single (SiO2), double (SiO2/20SiO2-80ZrO2), and triple (SiO2/ZrO2/75SiO2-25ZrO2) layers were designed and fabricated on the glass substrate by Sol-Gel method. Stble sols of SiO2-ZrO2 binary system for antireflective (AR) coatings were synthesized with tetraethyl orthosilicate (TEOS) and zirconium n-butoxide as precursors and ethylacetoacetate (EAcAc) as a chelating agent in an atmosphere environment. Films were deposited on soda-lime glass at the withdrawal rates of 3~11 cm/min using the prepared polymeric sols by dip-coating and they were heat-treated at 45$0^{\circ}C$ for 10 min to obtain homogeneous, amorphous and crack-free films. In case of SiO2-ZrO2 binary system, refractive index of film increased with an increase of ZrO2 mol%. Designed optical constant of films could be obtained through varying the withdrawal rate. In the visible region (380~780nm), reflectance was measured with UV/VIS/NIR Spectrophotometer. Average reflectances of the prepared single-layer [SiO2 (n=1.46, t=103nm)], double-layer [SiO2 (n=1.46, t=1-4nm)/20SiO2-80ZrO2 (n=1.81, t=82nm)], and triple-layer [SiO2 (n=1.46, t=104nm)/ZrO2 (n=1.90, t=80nm)/75SiO2-25ZrO2 (n=1.61, t=94 nm)] were 4.74%, 0.75% and 0.38%, respectively.

• Journal of the Korean Ceramic Society
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• v.36 no.8
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• pp.791-798
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• 1999

The preparation method of yttria-stabilized zirconia(YSZ) thin film for an anode support type solid oxide fuel cell(SOFC) by electrophoretic deposition(EPD) and dip-coating was studied. And the difference in both preparation method was investigated through basic understanding of processing parameters which may significantly affect weight microstruxcture and defect of film. In dip-coating the thickness of film increased with time until 30 s and then the weight of film decreased with time due to particle falling off from the coagulated film. In EPD although the weight of film increased with time and applied constant-current sagging of the film was observed when the applied current was less that 0.035 mA/$cm^2$ and more than 120 s. Since YSZ thin film by EPD on porous substrate was dense smooth and homogeneous it was expected to be suitable for the electrolyte of an anode support type SOFC.

• Journal of the Korean Ceramic Society
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• v.50 no.4
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• pp.301-307
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• 2013

SiC hollow fiber was fabricated by curing, dissolution and sintering of Al-PCS fiber, which was melt spun the polyaluminocarbosilane. Al-PCS fiber was thermally oxidized and dissolved in toluene to remove the unoxidized area, the core of the cured fiber. The wall thickness ($t_{wall}$) of Al-PCS fiber was monotonically increased with an increasing oxidation curing time. The Al-PCS hollow fiber was heat-treated at the temperature between 1200 and $2000^{\circ}C$ to make a SiC hollow fibers having porous structure on the fiber wall. The pore size of the fiber wall was increased with the sintering temperature due to the decomposition of the amorphous $SiC_xO_y$ matrix and the growth of ${\beta}$-SiC in the matrix. At $1400^{\circ}C$, a nano porous wall with a high specific surface area was obtained. However, nano pores grew with the grain growth after the thermal decomposition of the amorphous matrix. This type of SiC hollow fibers are expected to be used as a substrate for a gas separation membrane.