• The Journal of the Korea institute of electronic communication sciences
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• 제11권11호
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• pp.1047-1052
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• 2016

In this paper, we propose the CSLR(: Complementary Single Loop Resonators)-loaded inset fed patch antenna with a conducting reflector to improve the radiation patterns. Reflector of the proposed antenna is located below about ${\lambda}_0/4$ from the ground plane of the patch, the size is about two times of the patch. The proposed antenna is designed and fabricated on the substrate which has a dielectric constant and thickness with 2.5 and 0.787 mm, respectively. Simulation results are obtained by using the HFSS, 3D EM Solver based Finite Element Method(: FEM). The resonant frequency and matching characteristics of the antenna with reflector are substantially the same as when there is no change in the antenna without reflector, it is confirmed that radiation patterns are significantly improved by the reflector.

• Progress in Superconductivity and Cryogenics
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• 제15권4호
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• pp.15-20
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• 2013

We investigated the flux pinning properties of both 10 mol% Zr-and Sn-doped $YBa_2Cu_3O_{7-{\delta}}$ (YBCO) films with the same thickness of ~350 nm for a comparative purpose. The films were prepared on the $SrTiO_3$ (STO) single crystal substrate by the metal-organic deposition (MOD) process. Compared with Sn-doped YBCO film, Zr-doped one exhibited a significant enhancement in the critical current density ($J_c$) and pinning force density ($F_p$). The anisotropic $J_{c,min}/J_{c,max}$ ratio in the field-angle dependence of $J_c$ at 77 K for 1 T was also improved from 0.23 for Sn-doped YBCO to 0.39 for Zr-doped YBCO. Thus, the highest magnetic $J_c$ values of 9.0 and $2.9MA/cm^2$ with the maximum $F_p$ ($F_{p,max}$) values of 19 and $5GN/m^3$ at 65 and 77 K for H // c, respectively, could be achieved from Zr-doped YBCO film. The stronger pinning effect in Zr-doped YBCO film is attributable to smaller $BaZrO_3$ (BZO) nanoparticles (the average size ${\approx}28.4$ nm) than $YBa_2SnO_{5.5}$ (YBSO) nanoparticles (the average size ${\approx}45.0$ nm) incorporated in Sn-doped YBCO film since smaller nanoparticles can generate more defects acting as effective flux pinning sites due to larger incoherent interfacial area for the same doping concentration.

• Proceedings of the KIEE Conference
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• 대한전기학회 2008년도 제39회 하계학술대회
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• pp.1246-1247
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• 2008

With recent advanced in portable electric devices, wireless sensor, MEMS and bio-Mechanics device, the new typed power supply, not conventional battery but self-powered energy source is needed. Particularly, the system that harvests from their environments are interests for use in self powered devices. For very low powered devices, environmental energy may be enough to use power source. Therefore, in other to made piezoelectric energy harvesting device, PMN-PZT thick film was formed by the screen printing method on the Ag/Pd coated alumina substrate. The layer was 8 layers and slurry where a-terpineol, ethycellulose, ferro B-75001 as Vehicle, PMN-PZT powder used are fabricated by ball mill. The output power quality was be also investigated by changing the load resistance, weight and frequency. The made piezoelectric energy harvesting device was resulted from the conditions of 33$k{\Omega}$, 0.25g, 197Hz respectively. The thick film was prepared at the condition of 2.75Vrms, and its power was 230${\mu} W$ and its thickness was 56${mu}m$. The piezoelectric energy harvesting device output voltage was increased, when the load weight, load resistance was increasing and resonance frequency was diminishing. The other side, resonance frequency was diminished, when the weight was increasing. And output power was continuously it changed by load resistance, output voltage, weight and resonance frequency.

• Transactions of the Korean Society of Mechanical Engineers A
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• 제34권4호
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• pp.475-480
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• 2010

The thermal barrier coating of a gas turbine blade was degraded by isothermal heating in a furnace and by varying the exposure time and temperature. Then, a micro-Vickers hardness test was conducted on the cross section of the bond coat and Ni-based superalloy substrate. Further, the thickness of TGO(Thermally Grown Oxide) was measured by using an image analyzer, and the changes in the microstructure and element contents in the coating were analyzed by using an optical microscope and by performing SEM-EDX analysis. No significant change was observed in the Vickers hardness of the bond coat when the coated specimen was degraded at a high temperature; delamination was observed between the top coat and the bond coat when the coating was degraded for 50 h at a temperature $1,151^{\circ}C$.

• Journal of the Korea Institute of Information and Communication Engineering
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• 제9권3호
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• pp.602-608
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• 2005

We have studied to obtain the SAW filter for the Single Phase Unidirectional Transduce. (SPUDT), was formed on the Langasite substrate and was evaporated by Aluminum-Copper alloy and then we performed computer-simulated by simulator. We can fabricate that the block weighted type IDT as an input transducer of the filter and the withdrawal weighted type IDT as an output transducer of the filter from the results of our computer-simulations. Also, we have performed to obtain the properly conditions about impedance matching of the SAW filter for SPUDT. We have employed that the number of pairs of the input and output IDT are 50 pairs and the thickness and the width of reflector are 5000A and $3.6{\mu}m$, respectively. And the width of IDT' fingers is $2.4{\mu}m$, and the space between IDT' finger and reflector is $2.0{\mu}m$. Frequency response of the fabricated SAW filter has the property that the center frequency is about 190MHz and bandwidth at the 3dB is probably 7.7MHz after when we have matched impedance. Also, we could obtain that ripple characteristics is less than 0.4dB and standing wave ratio is probably 1.5 after when we have matched impedance.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.63-63
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• 2010

Using both experimental and theoretical approaches, we have investigated the adsorption properties of an organic molecule (HATCN), which is used in OLEDs as an efficient hole injection layer, on metal and inert surfaces. We have also studied the structural and electronic properties of such interfaces and the dependences on deposition thickness. We have observed different trends in work function changes with different surfaces. Our photoelectron spectroscopic measurements have revealed an abnormal phenomenon in HATCN on a metal (Cu) surface: the work function decreases at lower coverage (~monolayer) of HATCN on a metal (Cu) surface, but it increases back and becomes higher than that of a bare Cu surface at higher coverage. It has, on the contrary, been observed that the work function of graphene surface just increases as the HATCN coverage increases. Our first-principles density functional calculations has not only verified our experimental observations, but also disclosed the underlying mechanism of such abnormal and different work function behaviors. We have found that the change in work function results from mutual polarization induced by the geometrical deformation and the bond dipole formed at the interface due to the charge redistribution. At low coverage of HAT-CN on Cu substrate, the former reduces the work function significantly by pulling down the vacuum level, while the latter tends to push up the vacuum level resulting in the work function increase.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.178-178
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• 2010

With the scaling down of ULSI(Ultra Large Scale Integration) circuit of CMOS(Complementary Metal Oxide Semiconductor)based electronic devices, the electronic devices become more faster and smaller size that are promising field of semiconductor market. However, very narrow line width has some disadvantages. For example, because of narrow line width, deposition of conformal and thin barrier is difficult. Besides, proportion of barrier width is large, thus resistance is high. Conventional PVD(Physical Vapor Deposition) thin films are not able to gain a good quality and conformal layer. Hence, in order to get over these side effects, deposition of thin layer used of ALD(Atomic Layer Deposition) is important factor. Furthermore, it is essential that copper atomic diffusion into dielectric layer such as silicon oxide and hafnium oxide. If copper line is not surrounded by diffusion barrier, it cause the leakage current and devices degradation. There are some possible methods for improving the these secondary effects. In this study, TaNx, is used of Tertiarybutylimido tris (ethylamethlamino) tantalum (TBITEMAT), was deposited on the 24nm sized trench silicon oxide/silicon bi-layer substrate with good step coverage and high quality film using plasma enhanced atomic layer deposition (PEALD). And then copper was deposited on TaNx barrier using same deposition method. The thickness of TaNx was 4~5 nm. TaNx film was deposited the condition of under $300^{\circ}C$ and copper deposition temperature was under $120^{\circ}C$, and feeding time of TaNx and copper were 5 seconds and 5 seconds, relatively. Purge time of TaNx and copper films were 10 seconds and 6 seconds, relatively. XRD, TEM, AFM, I-V measurement(for testing leakage current and stability) were used to analyze this work. With this work, thin barrier layer(4~5nm) with deposited PEALD has good step coverage and good thermal stability. So the barrier properties of PEALD TaNx film are desirable for copper interconnection.

• Journal of the Korean Vacuum Society
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• 제17권1호
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• pp.46-50
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• 2008

Optical images on the porous silicon exhibiting Febry-Perot fringe pattern have been prepared by using an electrochemical etching of p-type silicon wafer (boron-doped,<100> orientation, resistivity $0.8{\sim}1.2m{\Omega}-cm$) and beam projector. The images remained in the substrate displayed an optical images correlating to the optical pattern and could be useful for optical data storage. A decrease in the effective optical thickness of the Febry-Perot layers was observed, indicative of a change in refractive index induced by exposing of porous silicon to the white light. This provides the ability to fabricate complex optical encoding in the surface of silicon.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.361.2-361.2
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• 2014

Transition metal dichalcogenides (MoS2, WS2, WSe2, MoSe2, NbS2, NbSe2, etc.) are layered materials that can exhibit semiconducting, metallic and even superconducting behavior. In the bulk form, the semiconducting phases (MoS2, WS2, WSe2, MoSe2) have an indirect band gap. Recently, these layered systems have attracted a great deal of attention mainly due to their complementary electronic properties when compared to other two-dimensional materials, such as graphene (a semimetal) and boron nitride (an insulator). However, these bulk properties could be significantly modified when the system becomes mono-layered; the indirect band gap becomes direct. Such changes in the band structure when reducing the thickness of a WS2 film have important implications for the development of novel applications, such as valleytronics. In this work, we report for the controlled synthesis of large-area (~cm2) single-, bi-, and few-layer WS2 using a two-step process. WOx thin films were deposited onto a Si/SiO2 substrate, and these films were then sulfurized under vacuum in a second step occurring at high temperatures ($750^{\circ}C$). Furthermore, we have developed an efficient route to transfer these WS2 films onto different substrates, using concentrated HF. WS2 films of different thicknesses have been analyzed by optical microscopy, Raman spectroscopy, and high-resolution transmission electron microscopy.

• Korean Journal of Materials Research
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• 제20권5호
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• pp.267-270
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• 2010

Sn doped $In_2O_3$ (ITO) and ITO/Cu/ITO (ICI) multilayer films were prepared on glass substrates with a reactive radio frequency (RF) magnetron sputter without intentional substrate heating, and then the influence of the Cu interlayer on the methanol gas sensitivity of the ICI films were considered. Although both ITO and ICI film sensors had the same thickness of 100 nm, the ICI sensors had a sandwich structure of ITO 50 nm/Cu 5 nm/ITO 45 nm. The ICI films showed a ten times higher carrier density than that of the pure ITO films. However, the Cu interlayer may also have caused the decrement of carrier mobility because the interfaces between the ITO and Cu interlayer acted as a barrier to carrier movement. Although the ICI films had two times a lower mobility than that of the pure ITO films, the ICI films had a higher conductivity of $3.6{\cdot}10^{-4}\;{\Omega}cm$ due to a higher carrier density. The changes in the sensitivity of the film sensors caused by methanol gas ranging from 50 to 500 ppm were measured at room temperature. The ICI sensors showed a higher gas sensitivity than that of the ITO single layer sensors. Finally, it can be concluded that the ICI film sensors have the potential to be used as improved methanol gas sensors.