• 한국진공학회지
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• 제9권1호
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• pp.48-59
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• 2000

Electrochromic NiO films were prepared by using an electron-beam deposition method. The influence of the preparation conditions, especially the substrate temperature, on the electrochemical stability of film was investigated. The optical properties and stability of as-deposited films strongly depended on the substrate temperature during deposition. The NiO film prepared at a substrate temperature of 150~$200^{\circ}C$ was found to be the stabel when subjected to 5000cycles in a 0.5M solution of KOH between -6.0 and +0.8V. The best electrochromic parameters after 5000cycles were obtained for samples with substrate temperature of $150^{\circ}C$. The obtained electrochromic parameters are CE=-0.049($\lambda$=550nm), $\Delta$OD=0.88($\lambda$=550nm)$\textrm{cm}^2$/mC, Qin=-18.11mC/$\textrm{cm}^2$ and Qleft= 14.8mC/$\textrm{cm}^2$.

• Bulletin of the Korean Chemical Society
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• 제18권6호
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• pp.640-643
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• 1997

Pure titanium dioxide $(TiO_2)$ films were prepared by pulsed laser deposition on a single crystal Si(100) substrate. We have investigated the growth of crystalline titanium dioxide films with respect to substrate temperature and ambient oxygen pressure. The structural properties of the films were analyzed by X-ray diffraction. We found that the anatase as well as the rutile phases could be formed from the original rutile phase of the target $TiO_2$. At 0.75 torr of ambient oxygen pressure, the structure of $TiO_2$ film was amorphous at room temperature, anatase between 300 and 600 ℃, a mixture of anatase and rutile between 700 and 800 ℃, and only rutile at 900 ℃ and above. However, at a low ambient oxygen pressure, the rutile phase became dominant; the only rutile phase was obtained at the ambient oxygen pressure of 0.01 torr and the substrate temperature of 800 ℃. Therefore, the film structures were largely influenced by substrate temperature and ambient oxygen pressure.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계합동학술대회 논문집
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• pp.153-157
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• 2002

This paper deals with the relationships between MgO manufacturing condition and misfiring at low temperature. The characteristics of MgO are affected by substrate temperature and MgO deposition current. In this study. the. substrate temperature was varied from $100^{\circ}C$ to $200^{\circ}C$. And the MgO deposition current was varied from 5mA to 20mA. As a result. the misfiring at low temperature was decreased in the panels with substrate temperature $200^{\circ}C$ and MgO deposition current 5mA. These results may be explained that the higher substrate temperature and lower MgO deposition current makes the denser film formation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.422-426
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• 2003

Cu thin films of $6000{\AA}$ thickness were deposited by Electron Beam Evaporation(EBE) method on the glass. The resistivity properties and adhesion of Cu thin films were investigated by various annealing and substrate temperature. Cu thin films were annealed in the air and vacuum condition for 10 min after the deposition. The resistivity and adhesion(the force required to separate films from substrates) was measured by 4-point probe and scratch testing. The resistivity of non-annealing Cu thin films was distinguished more substrate temperature loot than substrate temperature R.T, $200^{\circ}C$. In the case of air condition annealing, as heating temperature was increased, the resistivity was decreased. In the case of vacuum condition annealing, the resistivity was increased at heating temperature $200^{\circ}C$. The best resistivity($1.72\;{\mu}{\Omega}{\cdot}cm$) of Cu thin films was obtained by the air condition heating temperature $200^{\circ}C$ at the substrate heating temperature $100^{\circ}C$. As a result of scratch testing, adhesion was increased by annealing. And maximum adhesion had 600 gf.

• 한국초전도ㆍ저온공학회논문지
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• 제14권1호
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• pp.1-3
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• 2012

LMO($LaMnO_3$) buffer layer of superconducting coated conductor was deposited on IBAD-MgO template in the plasma atmosphere at $650^{\circ}C$ which is relatively low compared with conventional deposition temperature of more than $800^{\circ}C$. Deposition method of LMO was DC sputtering, and target and deposition chamber were connected to the cathode and anode respectively. When DC voltage was applied between target and chamber, plasma was formed on the surface of target. The tape substrate was located with the distance of 10 cm between target and tape substrate. When anode bias was connected to the tape substrate, electrons were attracted from plasma in target surface to the tape substrate, and only tape substrate was heated by electron bombardment without heating any other zone. The effect of electron bombardment on the surface of substrate was investigated by increasing bias voltage to the substrate. We found out that the sample of electron bombardment had the effect of surface heating and had good texturing at low controlling temperature.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2007년도 추계학술대회 논문집
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• pp.139-140
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• 2007

• 한국표면공학회지
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• 제51권2호
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• pp.126-132
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• 2018

SnS thin films with different substrate temperatures ($150 {\sim}300^{\circ}C$) as process parameters were grown on soda-lime glass substrates by RF magnetron sputtering. The effects of substrate temperature on the structural and optical properties of SnS thin films were investigated by X-ray diffraction (XRD), Raman spectroscopy (Raman), field-emission scanning electron microscopy (FESEM), energy dispersive X-ray spectroscopy (EDS), and Ultraviolet-visible-near infrared spectrophotometer (UV-Vis-NIR). All of the SnS thin films prepared at various substrate temperatures were polycrystalline orthorhombic structures with (111) planes preferentially oriented. The diffraction intensity of the (111) plane and the crystallite size were improved with increasing substrate temperature. The three major peaks (189, 222, $289cm^{-1}$) identified in Raman were exactly the same as the Raman spectra of monocrystalline SnS. From the XRD and Raman results, it was confirmed that all of the SnS thin films were formed into a single SnS phase without impurity phases such as $SnS_2$ and $Sn_2S_3$. In the optical transmittance spectrum, the critical wavelength of the absorption edge shifted to the long wavelength region as the substrate temperature increased. The optical bandgap was 1.67 eV at the substrate temperature of $150^{\circ}C$, 1.57 eV at $200^{\circ}C$, 1.50 eV at $250^{\circ}C$, and 1.44 eV at $300^{\circ}C$.

• 한국연소학회지
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• 제7권4호
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• pp.21-28
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• 2002

Synthesis of carbon nanotubes and nanofibers on a metal substrate by an ethylene fueled inverse diffusion flame was illustrated. Stainless steel plates were used for the catalytic metal substrate. Multi-walled carbon nanotubes and nanofibers with a diameter range of 30-80nm were found on the substrate. The temperature of the substrate played an important role in the formation of carbon nanotubes and nanofibers. The pathway to the nanotubes and nanofibers could be determined by the temperature history of the substrate.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2007년도 추계학술대회 논문집
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• pp.19-19
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• 2007

• 한국자기학회지
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• 제12권2호
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• pp.46-50
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• 2002

110$\AA$ 두께의 Mumetal 박막을 자기장하에서 기판온도를 변화시키면서 제작하고, 고진공 분위기에서 자기장중 열처리를 수행하였다. 박막에 유도되는 자기이방성은 인가자기장 방향에서 30$^{\circ}$간격으로 180$^{\circ}$까지 자기이력곡선을 측정하여 조사하였다. 기판 온도가 증가할수록 용이축 방향의 보자력은 감소하였으나 일축이방성은 인가자기장 방향에서 벗어났다. 20$0^{\circ}C$에서 한 시간 동안 자기장중 열처리를 수행하면 기판온도에 상관없이 일축이방성이 향상되었다. 기판온도가 5$0^{\circ}C$ 이하일때 4.3 Oe의 이방성 자기장을 나타냈으며 기판온도가 증가할수록 이방성 자기장은 감소하였다. Mumetal 박막의 일축이방성은 열처리 전후 모두 5$0^{\circ}C$에서 가장 잘 유도되었다.