• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
• /
• pp.156.2-156.2
• /
• 2016

The variation of the surface structure of the Al adsorbed W(110) planes according to the coverage and the substrate temperature has been investigated using LEED and ISS When the Al atoms were adsorbed on the W(110) surface at room temperature, a p($1{\times}1$) of the fcc (111) face were found at the coverage higher than 4 ML. When the substrate temperature was kept at 900 K during Al adsorption and the coverage was 1.0 ML, the surface revealed a p($1{\times}1$) of the bcc(110) face and when the coverage is 1.5 ML, the surface showed a p($1{\times}1$) of the bcc (110) face together with a p($1{\times}1$) double domain structure (fcc (111) face) rotated ${\pm}3^{\circ}$ from the [100] direction of the W(110) surface. When Al atoms were adsorbed on the W(110) surface at the substrate temperature of 1000 K and the coverage was higher than 1.0 ML, the surface revealed a p($1{\times}1$) of the bcc(110) face together with p($1{\times}1$) double domain structure(fcc(111) face) rotated ${\pm}3^{\circ}{\sim}5^{\circ}$ from the [100] direction of the W(110) surface. When Al atoms were adsorbed on the W(110) surface at the substrate temperature of 1100 K and the coverage was 0.5 ML, Al atoms formed a p($2{\times}1$) double domain structure When the coverage was 1.0 ML, the double domain hexagonal structure (fcc(111) face) rotated ${\pm}5^{\circ}$ from the [100] direction of the W(110) surface and another distorted hexagonal structure was found. Low-energy electron diffraction results along with ion scattering spectroscopy results showed that the Al atoms followed the Volmer-Weber growth mode at high temperature.

• 생태와환경
• /
• 제50권3호
• /
• pp.355-361
• /
• 2017

담수에 서식하는 참실지렁이(Tubifex tubifex)가 수온 변화에 따라 보이는 반응과 하상의 구성에 대한 선호성을 분석하였다. 수온이 증가할 때 참실지렁이는 활동성이 증가하였다. $10{\sim}16^{\circ}C$의 낮은 온도에서 50% 이상의 개체가 몸을 수축하고 꼬여있는 상태로 관찰되었으며, $24^{\circ}C$ 이상의 온도에서는 대부분의 개체가 몸을 꼬임 없이 이완시킨 상태로 관찰되었다. 하상입자의 크기가 다른 여러 하상을 이용한 실험에서는 가장 작은 입자인 미사-진흙 (silt-clay, <0.063 mm)을 선호하였다.

• 센서학회지
• /
• 제18권5호
• /
• pp.343-348
• /
• 2009

$NiO{\cdot}(Co_{0.25}Mn_{0.75})_2O_3$(Mn-Ni-Co) and $Ba_{0.5}Sr_{0.5}TiO_3$(BST) thick films were screen printed on Pt patterned alumina substrate to investigate the effects of sintering temperature on humidity and temperature sensing properties of ceramic sensors. A raise in sintering temperature increased resistance and B constant of the Mn-Ni-Co temperature sensor. This may have derived from the synergic effects of the reduction in charge carriers caused by the substitution of Co for Mn as well as the formation of microcracks from the difference in thermal expansion coefficients. Dependence of resistance on humidity of the Mn-Ni-Co temperature sensor, however, was not found. BST films sintered at temperatures in the range of $1100^{\circ}C$ to $1150^{\circ}C$ showed excellent humidity sensing properties. The BST humidity sensor was faster in its response than the Mn-Ni-Co temperature sensor. The humidity sensor, however, proved to be unstable under various temperatures, suggesting a need for a temperature stabilizing device. In contrast, the Mn-Ni-Co temperature sensor was stable under humid conditions.

• 한국재료학회지
• /
• 제11권12호
• /
• pp.1042-1046
• /
• 2001

Co-22%Cr alloy films are promising for high-density perpendicular magnetic recording media with their perpendicular anisotropy and large coercivity of 3000 Oe. We observed that a self organized nano structure(SONS) of fine ferromagnetic Co-enriched phase and paramagnetic Cr-enriched phase appears inside the grain of Co-Cr magnetic alloy thin films at the elevated substrate temperature after do-sputtering. We prepared 1000 $\AA$-thick Co-22%Cr films on 2000 $\AA$- SiO$_2$/Si(100) substrates at the deposition rate of 100 $\AA$/min with substrate temperatures of 3$0^{\circ}C$, 10$0^{\circ}C$, 15$0^{\circ}C$, 20$0^{\circ}C$, 30$0^{\circ}C$, and 40$0^{\circ}C$, respectively. We employed a vibrating sample magnetometer(VSM) to measure the B-H loops showing the saturation magnetifation, coercivity, remanence in in- plane and out- of- plane modes. In- plane coercivity, perpendicular coercivity, and perpendicular remanence increased as substrate temperature increased, how-ever they decreased after 30$0^{\circ}C$ slowly. Transmission electron microscope (TEM) characterization revealed that the self organized nano structure (SONS) appears at the elevated substrate temperature, which forms fine Co-enriched phases inside a grain, then it eventually affect the perpendicular magnetic property. Our results imply that we may tune the perpendicular magnetic properties with SONS obtained at appropriate substrate temperature.

• 한국전기전자재료학회논문지
• /
• 제24권4호
• /
• pp.340-344
• /
• 2011

Thermoelectric bismuth telluride ($Bi_2Te_3$) films were deposited on $4^{\circ}$ off oriented (001) GaAs substrates using a modified metal organic chemical vapor deposition (MOCVD) system. The effects of substrate temperature on surface morphologies, crystallinity, electrical properties and thermoelctric properties were investigated. Two dimensional growth mode (2D) was observed at substrate temperature lower than $400^{\circ}C$. However, three dimensional growth mode (3D) was observed at substrate temperature higher than $400^{\circ}C$. Change of growth mechanism from 2D to 3D was confirmed with environmental scanning electron microscope (E-SEM) and X-ray diffraction analysis. Seebeck coefficients of all samples have negative values. This result indicates that $Bi_2Te_3$ films grown by modified MOCVD are n-type. The maximum value of Seebeck coefficient was -225 ${\mu}V/K$ and the power factor was $1.86{\times}10^{-3}\;W/mK^2$ at the substrate temperature of $400^{\circ}C$. $Bi_2Te_3$ films deposited using modified MOCVD can be used to fabricate high-performance thermoelectric devices.

• 한국전자통신학회논문지
• /
• 제18권6호
• /
• pp.1067-1072
• /
• 2023

본 연구에서는 본 연구에서는 펄스 레이저 증착법으로 기판온도에 따른 AZO(Al₂O₃ : 3 wt %)박막을 제작하여, 구조적 특성과 전기적 및 광학적 특성을 조사하였다. 기판온도 400℃ 에서 증착한 AZO박막에서 가장 우수한 (002) 배향성을 나타내었으며, 이때의 반가폭은 0.42° 였다. 전기적 특성을 조사한 결과, 기판온도가 상승함에 따라 캐리어 농도와 이동도는 증가하였고 비저항은 감소하였다. 가시광 영역에서의 평균 투과도는 기판온도에 상관없이 85% 이상의 높은 값을 나타내었고, 기판온도에 상승함에 따라 캐리어 농도가 증가하고 이로 인해 에너지 밴드갭이 넓어지는 Burstein-Moss효과도 관찰할 수 있었다. 기판온도 400℃ 에서 증착한 AZO박막의 비저항과 재료평가지수는 각각 6.77 × 10^-4 Ω·cm 과 1.02 × 10⁴ Ω^-1·cm^-1 로 가장 우수한 값을 나타내었다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2009년도 추계학술대회 논문집
• /
• pp.203-203
• /
• 2009

Low temperature annealing for oxide TFTs including IGZO on PI substrate is the essential process to fabricate flexible display devices, since low heat-resistance on PI and PEN substrates limits the temperature range. Laser annealing is one of the promising candidates for low temperature process, and it has been used for various application in semiconductor and LCD fabrication. We irradiated laser to solution-based IGZO thin films on PI substrate were irradiated to laser beam, and investigated laser damage of PI layer. Based on transmittance analysis, wavelength(532nm) and scan speed(1000mm/s) is the optimized condition for laser irradiation about ink-Jet printed oxide TFTs on PI substrates.

• Carbon letters
• /
• 제10권3호
• /
• pp.230-233
• /
• 2009

In this study, a low temperature growth of high-quality carbon nanotubes on glass substrate using a local surface heating without heating damage to substrate was tried and characterized. The local joule heating was induced to only Ni/Ti metal film on glass substrate by applying voltage to the film. It was estimated that local surface joule heating method could heat the metal surface locally up to around $1200^{\circ}C$ by voltage control. We could successfully obtain high-quality carbon nanotubes grown at $300^{\circ}C$ by applying 125 V for joule heating as same as carbon nanotubes grown at $900^{\circ}C$.

• 반도체디스플레이기술학회지
• /
• 제16권1호
• /
• pp.112-115
• /
• 2017

ITO thin films were grown on the glass substrate under various oxygen gas flow and substrate temperature by using FTS (Facing Target Sputtering) system. To investigate properties of as-prepared films for transparent electrical devices, we employed four-point probe, UV-VIS spectrometer, X-ray diffractometer (XRD), scanning electron microscopy (SEM), Hall Effect measurement system and Atomic Force Microscope (AFM). As a results, all of prepared samples has high transmittance of over 80 % in the visible range (300-800 nm). Their resistivity increased as a function of oxygen gas flow and substrate temperature due to their crystal structure and oxygen defect in the films. As-prepared films have a resistivity of under $10^{-4}({\Omega}-cm)$.

• 한국표면공학회지
• /
• 제40권5호
• /
• pp.209-213
• /
• 2007

Change of the plasma volume by pulse frequency in a bipolar pulsed DC unbalanced magnetron sputtering was investigated. As increasing the frequency at off duty 10% and at a constant power, the plasma volume was lengthened in vertical direction from the AZO target. When there is an electrically floated substrate, the vertical length of the plasma area was not affected by the pulse frequency. Instead, the diameter of the plasma volume was increased. We found that the temperature rise of a substrate was affected by the pulse frequency, too. As increasing it, the maximum temperature rise of a glass substrate was decreased from $132^{\circ}C\;to\;108^{\circ}C$.