• KSII Transactions on Internet and Information Systems (TIIS)
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• v.10 no.8
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• pp.3701-3727
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• 2016

Recently Service Function Chaining (SFC) is promising to innovate the network service mode in modern networks. However, a feasible implementation of SFC is still difficult due to the need to achieve functional equivalence with traditional modes without sacrificing performance or increasing network complexity. In this paper, we present a configurable network service chaining (CNSC) mechanism to provide services for network traffics in a flexible and optimal way. Firstly, we formulate the problem of network service chaining and design an effective service chain construction framework based on integrating software-defined networking (SDN) with network functions virtualization (NFV). Then, we model the service path computation problem as an integer liner optimization problem and propose an algorithm named SPCM to cooperatively combine service function instances with a network utility maximum policy. In the procedure of SPCM, we achieve the service node mapping by defining a service capacity matrix for substrate nodes, and work out the optimal link mapping policies with segment routing. Finally, the simulation results indicate that the average request acceptance ratio and resources utilization ratio can reach above 85% and 75% by our SPCM algorithm, respectively. Upon the prototype system, it is demonstrated that CNSC outperforms other approaches and can provide flexible and scalable network services.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.1
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• pp.17-23
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• 2005

The switching characteristics of MOS-Controlled Thyristor(MCT) is studied with variation of the channel length and impurity concentration in ON and OFF FET channel. The proposed MCT power device has the lateral structure and P-epitaxial layer in substrate. Two dimensional MEDICI simulator and PSPICE simulator are used to study the latch-up current and forward voltage-drop from the characteristics of I-V and the switching characteristics with variation of channel length and impurity concentration in P and N channel. The channel length and N impurity concentration of the proposed MCT power device show the strong affect on the transient characteristics of current and power. The N channel length affects only on the OFF characteristics of power and anode current, while the N doping concentration in P channel affects on the ON and OFF characteristics.

• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.3
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• pp.166-176
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• 2007

Radio frequency (RF) microelectromechanical systems (MEMS) have been pursued for more than a decade as a solution of high-performance on-chip fixed, tunable and reconfigurable circuits. This paper reviews our research work on RF MEMS switches and switching circuits in the past five years. The research work first concentrates on the development of lateral DC-contact switches and capacitive shunt switches. Low insertion loss, high isolation and wide frequency band have been achieved for the two types of switches; then the switches have been integrated with transmission lines to achieve different switching circuits, such as single-pole-multi-throw (SPMT) switching circuits, tunable band-pass filter, tunable band-stop filter and reconfigurable filter circuits. Substrate transfer process and surface planarization process are used to fabricate the above mentioned devices and circuits. The advantages of these two fabrication processes provide great flexibility in developing different types of RF MEMS switches and circuits. The ultimate target is to produce more powerful and sophisticated wireless appliances operating in handsets, base stations, and satellites with low power consumption and cost.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.311-311
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• 2013

The resistance switching memory devices have several advantages to take breakthrough for the limitation of operation speed, retention, and device scale. Especially, the metal-oxide materials such as ZnO are able to fabricate on the flexible and visible transparent plastic substrate. Also, the quantum dots (QDs) embedded in dielectric layer could be improve the ratio between the low and the high resistance becauseof their Coulomb blockade, carrier trap and induced filament path formation. In this study, we irradiated 0.2-MeV-electron beam on the ZnO/QDs/ZnO structure to control the defect and oxygen vacancy of ZnO layer. The metal-oxide QDs embedded in ZnO layer on Pt/glass substrate were fabricated for a memory device and evaluated electrical properties after 0.2-MeV-electron beam irradiations. To formation bottom electrode, the Pt layer (200 nm) was deposited on the glass substrate by direct current sputter. The ZnO layer (100 nm) was deposited by ultra-high vacuum radio frequency sputter at base pressure $1{\times}10^{-10}$ Torr. And then, the metal-oxide QDs on the ZnO layer were created by thermal annealing. Finally, the ZnO layer (100 nm) also was deposited by ultra-high vacuum sputter. Before the formation top electrode, 0.2 MeV liner accelerated electron beams with flux of $1{\times}10^{13}$ and $10^{14}$ electrons/$cm^2$ were irradiated. We will discuss the electrical properties and the physical relationships among the irradiation condition, the dislocation density and mechanism of resistive switching in the hybrid memory device.

• Current Optics and Photonics
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• v.3 no.1
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• pp.66-71
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• 2019

Application of liquid crystal (LC) materials to a flexible device is challenging because the bending of LC displays easily causes change in thickness of the LC layer and orientation of LCs, resulting in deterioration in a displayed image quality. In this work, we demonstrate a prototype device combining a flexible polymer substrate and an optically isotropic LC-polymer composite in which the device consists of interdigitated in-plane switching electrodes deposited on a flexible colorless polyimide substrate and the composite consisting of nano-sized LC droplets in a polymer matrix. The device can keep good electro-optic characteristics even when it is in a bending state because the LC orientation is not disturbed in both voltage-off and -on states. The proposed device shows a high potential to be applicable for future flexible LC devices.

• Journal of Applied Reliability
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• v.16 no.1
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• pp.1-6
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• 2016

Purpose: Fluorine doped tin oxide (FTO) bottom electrode for $Ta_2O_5$ based RRAM was studied to apply for transparent resistive switching memory devices owing to its superior transparency, good conductivity and chemical stability. Methods: $ITO/Ta_2O_5/FTO$ (ITF) and $ITO/Ta_2O_5/Pt$ (ITP) devices were fabricated on glass and Si substrate, respectively. UV-visible (UV-VIS) spectroscopy was used to examine transparency of the ITF device and its band gap energy was determined by conventional Tauc plot. Electrical properties, such as electroforming and voltage-induced RS characteristics were measured and compared. Results: The device with an FTO bottom electrode showed good transparency (>80%), low forming voltage (~-2.5V), and reliable bipolar RS behavior. Whereas, the one with Pt electrode showed both bipolar and unipolar RS behaviors unstably with large forming voltage (~-6.5V). Conclusion: Transparent and conducting FTO can successfully realize a transparent RRAM device. It is concluded that FTO electrode may form a stable interface with $Ta_2O_5$ switching layer and plays as oxygen ion reservoir to supply oxygen vacancies, which eventually facilitates a stable operation of RRAM device.

• Journal of Sensor Science and Technology
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• v.28 no.2
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• pp.71-75
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• 2019

This paper proposes the extension of the dynamic range in complementary metal oxide semiconductor (CMOS) image sensors (CIS) using switching operation of in-pixel inverter. A CMOS inverter is integrated in each unit pixel of the proposed CIS for switching operations. The n+/p-substrate photodiode junction capacitances are added to each unit pixel. When the output voltage of the photodiode is less than half of the power supply voltage of the CMOS inverter, the output voltage of the CMOS inverter changes from 0 V to the power supply voltage. Hence, the output voltage of the CMOS inverter is adjusted by changing the supply voltage of the CMOS inverter. Thus, the switching point is adjusted according to light intensity when the supply voltage of the CMOS inverter changes. Switching operations are then performed because the CMOS inverter is integrated with in each unit pixel. The proposed CIS is composed of a pixel array, multiplexers, shift registers, and biasing circuits. The size of the proposed pixel is $10{\mu}m{\times}10{\mu}m$. The number of pixels is $150(H){\times}220(V)$. The proposed CIS was fabricated using a $0.18{\mu}m$ 1-poly 6-metal CMOS standard process and its characteristics were experimentally analyzed.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.573-573
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• 2012

High quality $VO_2$ thin films were successfully grown on GaN substrate by optimizing oxygen partial pressure during the growth using RF sputtering technique. The $VO_2$ thin film grown on GaN substrate exhibited an unusual metal insulator transition behavior, which was known to be observed only either in doped sample or under uniaxial stress. Raman spectra also confirmed that metal insulator transition occurred from monoclinic M1 to rutile R phase via monoclinic M2 phase with increasing temperature. We believe that large lattice mismatch between $VO_2$ and GaN substrate may cause M2 phase to be thermodynamically stable. Optical transmittance and its electrical switching behavior were carefully investigated to elucidate the underlying physics of its metal insulator transition behavior. This study may lead to a unique opportunity to better understand the growth mechanism of M2 phase dominant $VO_2$ thin films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.8
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• pp.720-723
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• 2005

We studied the quantitativity of the image sticking which is occured by the resicual DC in the fringe-electric field switching (FFS) mode. Actually, in the FFS mode driven by the strong fringe electric field, the asymmetric residual DC was formed in the bottom substrate. It made the impurity ion stick to the alignment layer such as polyimde layer. Thus, the differnece of the luminance existes after the stress check pattern is applied to the panel so that we can see the image sticking. This image sticking decreases as the residual DC value between specific patterns decreases. Therefore, it is necessary to control the residual DC for the FFS mode with the high image quality. It is possible to eliminate the image stiking when the extra pixel voltage is applied through the circuit tunning for reducing the difference of residual DC accroding to the panel position.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.629-632
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• 2009

We have proposed a novel viewing angle controllable display of in-plane switching (IPS) mode with single panel. One pixel of this device is divided to two regions, in which main pixel shows image and sub pixel for viewing angle control. In initial state, the liquid crystal of sub pixel is homogeneous aligned on substrate for wide viewing angle mode. On the other hand, after applying voltage, the liquid crystal of sub pixel tilts up for narrow viewing angle mode. The proposed device has advantage for the function for simple manufacturing process and good viewing angle control with single panel.