• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.64-64
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• 2000

Since its discovery in 1991, the carbon nanotube has attracted much attention all over the world; and several method have been developed to synthesize carbon nanotubes. According to theoretical calculations, carbon nanotubes have many unique properties, such as high mechanical strength, capillary properties, and remarkable electronical conductivity, all of which suggest a wide range of potential applications in the future. Here we report the synthesis in the catalytic decomposition of acetylene at ~65 $0^{\circ}C$ over Ni deposited on SiO2, For the catalyst preparation, Ni was deposited to the thickness of 100-300A using effusion cell. Different approaches using porous materials and HF or NH3 treated samples have been tried for synthesis of carbon nanotubes. It is decisive step for synthesis of carbon nanotubes to form a round Ni particles. We show that the formation of round Ni particles by heat treatment without any pre-treatment such as chemical etching and observe the similar size of Ni particles and carbon nanotubes. Carbon nanotubes were synthesized by chemial vapour deposition ushin C2H2 gas for source material on Ni coated Si substrate. Ni film gaving 20~90nm thickness was changed into Ni particles with 30~90nm diameter. Heat treatment of Ni fim is a crucial role for the growth of carbon nanotube, High-resolution transmission electron microscopy images show that they are multi-walled nanotube. Raman spectrum shows its peak at 1349cm-1(D band) is much weaker than that at 1573cm-1(G band). We believe that carbon nanotubes contains much less defects. Long carbon nanotubes with length more than several $\mu$m and the carbon particles with round shape were obtained by CVD at ~$650^{\circ}C$ on the Ni droplets. SEM micrograph nanotubes was identified by SEM. Finally, we performed TEM anaylsis on the caron nanotubes to determine whether or not these film structures are truly caron nanotubes, as opposed to carbon fiber-like structures.

• Journal of the Korean Vacuum Society
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• v.9 no.3
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• pp.254-257
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• 2000

We report spectroscopic ellipsometric (SE) measurements on $Cd_{1-x}Mg_x/Te$ (0$\leq$x$\leq$0.43) films grown on GaAs substrate. When compared with previous bulk data, at first, current spectrum shows clear interference oscillations below $E_0$ band gap energy, which means the transparent characteristic of direct transition material below $E_0$ edge. It proves that the film samples used for this work have the most interrupted surface of high quality reported so far by SE. Secondly the best resolution of $E_2$-peak is observed, so we can report clear splitting of E$_2$and $E_0'$ band gap energies. We also performed the multilayer calculation necessary to remove this interference oscillations to observe $E_0'$ band gap energy of $Cd_{1-x}Mg_x/Te$ (x=0.23) film.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.1
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• pp.70-75
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• 1997

An improved technique based upon an electron beam evaporation system has been developed to prepare cubic thin films In crystalline semiconductors. Zinc blonde CdSe epilayers were grown on GaAs(100) substrate by an e-beam evaporation method. The lattice parameter obtained from (400) reflection is $6.077\AA$, which is in excellent agreement with the value reported in the literature for zinc blonde CdSe. The orientation of the as-grown CdSe epilayer is determined by electron channeling patterns. The crystallinity of epitaxial CdSe layers were investigated on the double crystal X-ray rocking curve. The carrier concentration and mobility of epilayers deduced by Hall effect measurement are about $10^{18}{\textrm}{cm}^{-3}$, $10^2\textrm{cm}^2/V{\cdot}sec$ at room temperature, respectively. The photocurrent spectrum peak of the epilayer at 30 K exhibits a sharp change at 1.746 eV due to the free exciton of cubic CdSe.

• Journal of the Korean Magnetics Society
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• v.17 no.1
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• pp.18-21
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• 2007

The hexagonal $HoMn_{1-x}-Fe_xO_3$(x=0.00, 0.05) thin films were prepared using pulsed laser deposition(PLD) method on $Pt/Ti/SiO_2/Si$ substrate. The microstructure and magnetic properties have been studied by x-ray diffraction(XRD), atomic force microscopy (AFH), scanning electron microscope(SEM:), x-ray photoelectron spectroscopy(XPS), and conversion electron $M\"{o}ssbauer$ spectroscopy(CEMS). From the analysis of the x-ray diffraction patterns, the crystal structure for all films was found to be a hexagonal($P6_3cm$), which was preferentially grown along(110) direction. The lattice constant $c_0$ of the film with x=0.05 was close to that of single crystal, whereas lattice constant $a_0$ with respect to single crystal shows a slight decrease. This difference of lattice parameters between film and single crystal was caused by the lattice mismatch between the film and $Pt/Ti/SiO_2/Si$ substrate. Conversion electron $M\"{o}ssbauer$ spectrum of $HoMn_{0.95}Fe_{0.05}O_3$ thin film shows an asymmetry doublet absorption ratio at room temperature, which is due to the oriented direction of crystallographic domains. This is corresponding with analysis of x-ray diffraction. The quadrupole splitting(${\Delta}E_Q$) at room temperature is found to be $1.62{\pm}0.01mm/s$. This large ${\Delta}E_Q$ was caused by asymmetry environment surrounding Fe ion.

• Korean Journal of Materials Research
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• v.22 no.2
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• pp.103-109
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• 2012

Red-emitting $Eu^{3+}$-activated $(Y_{0.95-x}Al_x)VO_4$ (0 < x $\leq$ 0.12) nanophosphors with the particle size of ~30 nm and the high crystallinity have been successfully synthesized by a hydrothermal reaction. In the synthetic process, deionized water as a solvent and ethylene glycol as a capping agent were used. The crystalline phase, particle morphology, and the photoluminescence properties of the excitation spectrum, emission intensity, color coordinates and decay time, of the prepared $(Y_{0.95-x}Al_x)VO_4:Eu^{3+}$ nanophosphors were compared with those of the $YVO_4:Eu^{3+}$. Under 147 nm excitation, $(Y_{0.95-x}Al_x)VO_4$ nanophosphors showed strong red luminescence due to the $^5D_0-^7F_2$ transition of $Eu^{3+}$ at 619 nm. The luminescence intensity of $YVO_4:Eu^{3+}$ enhanced with partial substitution of $Al^{3+}$ for $Y^{3+}$ and the maximum emission intensity was accomplished at the $Al^{3+}$ content of 10 mol%. By the addition of $Al^{3+}$, decay time of the $(Y,Al)VO_4:Eu^{3+}$ nanophosphor was decreased in comparison with that of the $YVO_4:Eu^{3+}$ nanophosphor. Also, the substitution of $Al^{3+}$ for $Y^{3+}$ invited the improvement of color coordinates due to the increase of R/O ratio in emission intensity. For the formation of transparent layer, the red nanophosphors were fabricated to the paste with ethyl celluloses, anhydrous terpineol, ethanol and deionized water. By screen printing method, a transparent red phosphor layer was formed onto a glass substrate from the paste. The transparent red phosphor layer exhibited the red emission at 619 nm under 147 nm excitation and the transmittance of ~80% at 600 nm.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.5
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• pp.224-230
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• 2001

The characteristics of $NO/N_2O$ annealed reoxidized nitrided oxide being studied as super thin gate oxide and gate dielectric layers of Non-Volatile Semiconductor Memory (NVSM) were investigated by Dynamic Secondary Ion Mass Spectrometry (D-SIMS), Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS), and Auger Electron Spectroscopy (AES). The specimen was annealed by $NO/N_2O$ after initial oxide process and then rcoxidized for nitrogen redistribution in nitrided oxide. Out-diffusion of incorporated nitrogen during the wet oxidation in reoxidation process took place more strongly than that of the dry oxidation. It seems to indicate that hydrogen plays a role in breaking the Si N bonds. As reoxidation proceeds, incorporated nitrogen of $NO/N_2O$ annealed nitrided oxide is obsen-ed to diffuse toward the surface and substrate at the same time. ToF-SIMS results show that SiON species are detected at the initialoxide interface, and Si,NO species near the new $Si_2NO$ interface that formed after reoxidation. These SiON and $Si_2NO$ species most likely to relate to the origin of the state of memory charge traps in reoxidized nitrided oxide, because nitrogen dangling bonds of SiON and silicon dangling bonds of $Si_2NO$ are contained defects associated with memory effect.

• Journal of Sensor Science and Technology
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• v.8 no.1
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• pp.10-15
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• 1999

White emission thin film electroluminescent device was fabricated using ZnS for phosphor layer and BST ferroelectric thin film for insulating layer. For fabrication conditions of BST thin film, stoichiometry of target was $Ba_{0.5}Sr_{0.5}TiO_3$, substrate temperature was $400^{\circ}C$, working pressure was 30 mTorr, and A:$O_2$ ratio was 9:1. At this time, dielectric constant was 209 at 1kHz frequency. For phosphor layer ZnS:Mn, ZnS:Tb, and ZnS:Ag were used. Mixing rates of activators were respectively 0.8, 0.8, and 1 wt%. Total thickness of phosphor tapers was 500 nm, thickness of lower insulating layer was 200 nm, and thickness of upper insulating layer was 400 nm. In this conditions, luminescence threshold voltage of thin film electroluminescent device was $95\;V_{rms}$, maximum brightness was $3,000\;cd/m^2$ at $150\;V_{rms}$. Luminescence spectrum peak was observed at region of blue(450 nm), green(550 nm), and red(600 nm).

• Applied Chemistry for Engineering
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• v.10 no.1
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• pp.105-111
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• 1999

When the preparation method of iron silicide films possess the annealing process, the interfacial state of the films is not fine. The good quality films were obtained as the plasma was used without annealing processing. Since the injected precursors were various active species in the plasma state, the organic compound was contained in the prepared films. We confirmed the formation of Fe-Si bonds as well as the organic compound by Fe and Si vibration mode in Raman scattering spectrum at $250cm^{-1}$ and Ft-IR. Because of epitaxy growth being progressed by the high energy of plasma at the low temperature of substrate, iron silicide was epitaxially grown to ${\beta}$-phase that had lattice structure such as [220]/[202] and [115]. Band gap of the prepared films had value of 1.182~1.174 eV and optical gap energy was shown value of 3.4~3.7 eV. The Urbach tail and the sub-band-gap absorptions were appeared by organic compound in films. We knew that the prepared films by plasma were obtained a good quality films because of being grown single crystal.

• Biomolecules & Therapeutics
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• v.23 no.2
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• pp.189-194
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• 2015

P450 1A2 is responsible for the metabolism of clinically important drugs and the metabolic activation of environmental chemicals. Genetic variations of P450 1A2 can influence its ability to perform these functions, and thus, this study aimed to characterize the functional significance of three P450 1A2 allelic variants containing nonsynonymous single nucleotide polymorphisms (P450 $1A2^*8$, R456H; $^*15$, P42R; $^*16$, R377Q). Variants containing these SNPs were constructed and the recombinant enzymes were expressed and purified in Escherichia coli. Only the P42R variant displayed the typical CO-binding spectrum indicating a P450 holoenzyme with an expression level of ~ 170 nmol per liter culture, but no P450 spectra were observed for the two other variants. Western blot analysis revealed that the level of expression for the P42R variant was lower than that of the wild type, however the expression of variants R456H and R377Q was not detected. Enzyme kinetic analyses indicated that the P42R mutation in P450 1A2 resulted in significant changes in catalytic activities. The P42R variant displayed an increased catalytic turnover numbers ($k_{cat}$) in both of methoxyresorufin O-demethylation and phenacetin O-deethylation. In the case of phenacetin O-deethylation analysis, the overall catalytic efficiency ($k_{cat}/K_m$) increased up to 2.5 fold with a slight increase of its $K_m$ value. This study indicated that the substitution P42R in the N-terminal proline-rich region of P450 contributed to the improvement of catalytic activity albeit the reduction of P450 structural stability or the decrease of substrate affinity. Characterization of these polymorphisms should be carefully examined in terms of the metabolism of many clinical drugs and environmental chemicals.

• Korean Journal of Optics and Photonics
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• v.23 no.2
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• pp.64-70
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• 2012

We analyzed the changes in electrical and optical characteristics of 1 $mm^2$ multiple-quantum-well (MQW) blue LEDs grown on a c-plane sapphire substrate after a stress test. Experiments were performed by injecting 50 mA current for 200 hours to TO-CAN packaged sample chips. We selected the value of injection current for stress through the junction-temperature measurement by using the forward-voltage characteristics of a diode to maintain a sufficiently low junction temperature during the test. The junction temperature at the selected injection current of 50 mA was 308 K. Experiments were performed under the assumption that the average junction temperature of 308 K did not affect the characteristics of the ohmic contact and the GaN-based materials. Before and after the stress test, we measured and analyzed current-voltage, light-current, light distribution on the LED surface, wavelength spectrum and relative external quantum efficiency (EQE). After the stress test, it was observed experimentally that the optical power and the relative EQE decreased. We theoretically investigated and experimentally proved that these phenomena are due to the increased nonradiative recombination rate caused by the increased defect density.