• 제목/요약/키워드: substrate model

검색결과 805건 처리시간 0.028초

Temperature Dependence of the Deposition Behavior of Yttria-stabilized Zirconia CVD Films: Approach by Charged Cluster Model

  • Hwang, Nong-Moon;Jeon, In-Deok;Latifa Gueroudji;Kim, Doh-Yeon
    • 한국세라믹학회지
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    • 제38권3호
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    • pp.218-224
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    • 2001
  • Yttria-stabilized zirconia (YSZ) films were deposited with varying temperatures of ZrCl$_4$between 250~55$0^{\circ}C$ with YCl$_3$and the substrate at 100$0^{\circ}C$. Nanoamperes per square centimeter of the electric current were measured in the reactor during deposition and the current increased with increasing evaporation temperature of ZrCl$_4$. The zirconia nanometer size clusters were captured on the grid membrane near the substrate during the CVD process and observed by transmission electron microscopy (TEM). The deposition rate decreased with increasing evaporation temperature of ZrCl$_4$. A cauliflower-shaped structure was developed at 25$0^{\circ}C$ then gradually changed to a faceted-grain structure above 35$0^{\circ}C$. Dependence of the growth rate and the morphological evolution on the evaporation temperature of ZrCl$_4$was approached by the charged cluster model.

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PLAD법에 의한 탄소 플라즈마의 모델링 (The Modelling of Carbon Plume by Pulsed-laser ablation Method)

  • 소순열;정해덕;이진;박계춘;김창선;문채주
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 영호남 합동 학술대회 및 춘계학술대회 논문집 센서 박막 기술교육
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    • pp.41-45
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    • 2006
  • The study on laser-ablation plasmas has been strongly interested in fundamental aspects of laser-solid interaction and consequent plasma generation. In particular, this plasma has been widely used for the deposition of thin solid films and applied to the semiconductors and insulators. In this paper, we developed and discussed the generation of carbon ablation plasmas emitted by laser radiation on a solid target, graphite. The progress of carbon plasmas by laser-ablation was simulated using Monte-Carlo particle model under the pressures of vacuum, 1 Pa, 10 Pa and 66 Pa. At the results, carbon particles with low energy were deposited on the substrate as the pressure becomes higher. However, there was no difference of deposition distributions of carbon particles on the substrate regardless of the pressure.

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Ar 플라즈마 상태에서의 탄소 입자 운동 모델링 (The Motion of Carbon Plume in Ar Plasmas)

  • 소순열;정해덕;이진;박계춘;김창선;문채주
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 영호남 합동 학술대회 및 춘계학술대회 논문집 센서 박막 기술교육
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    • pp.15-19
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    • 2006
  • A pulsed laser ablation deposition (PLAD) technique is an excellent method for the fabrication of amorphous carbon (a-C) films, because it can generate highly energetic carbon clusters on a substrate. This paper was focused on the understanding and analysis of the motion of C particles in laser ablation assisted by Ar plasmas. The simulation has carried out under the pressure P=50 mTorr of Ar plasmas. Two-dimensional hybrid model consisting of fluid and Monte-Carlo models was developed and three kinds of the ablated particles which are carbon atom (C), ion ($C^+$) and electron were considered in the calculation of particle method. The motions of energetic $C^+$ and C deposited upon the substrate were investigated and compared. The interactions between the ablated particles and Ar gas plasmas were discussed.

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Deposition of Yttria Stabilized Zirconia by the Thermal CVD Process

  • In Deok Jeon;Latifa Gueroudji;Nong M. Hwang
    • The Korean Journal of Ceramics
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    • 제5권2호
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    • pp.131-136
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    • 1999
  • Yttria stabilized zirconia(YSZ) films were deposited on porous NiO substrates and quartz plates by the thermal CVD using $ZrCl_4, YCl_3$ as precursors, and $O_2$ as a reactive gas at atmospheric pressure. The evaporation temperature of $ZrCl_4$ was varied from $250^{\circ}C$ to $550^{\circ}C$ while the temperatures of $YCl_3$ and the substrate were varied from $1000^{\circ}C$ to $1030^{\circ}C$. As the evaporation temperature of $ZrCl_4$ increased, the deposition rate of $ZrO_2$ decreased, contrary to our expectation. As a result of the decreased deposition rate of $ZrO_2$, the yttria content increase. The high evaporation temperature of $ZrCl_4$ makes the well-faceted crystal while the low evaporation temperature leads to the cauliflower-shaped structure. The dependence of the evaporation temperature on the growth rate and the morphological evolution was interpreted by the charged cluster model.

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Dynamic stability analysis of a rotary GPLRC disk surrounded by viscoelastic foundation

  • Liang, Xiujuan;Ji, Haixu
    • Geomechanics and Engineering
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    • 제24권3호
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    • pp.267-280
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    • 2021
  • The research presented in this paper deals with dynamic stability analysis of the graphene nanoplatelets (GPLs) reinforced composite spinning disk. The presented small-scaled structure is simulated as a disk covered by viscoelastic substrate which is two-parametric. The centrifugal and Coriolis impacts due to the spinning are taken into account. The stresses and strains would be obtained using the first-order-shear-deformable-theory (FSDT). For Poisson ratio, as well as various amounts of mass densities, the mixture rule is employed, while a modified Halpin-Tsai model is inserted for achieving the elasticity module. The structure's boundary conditions (BCs) are obtained employing GPLs reinforced composite (GPLRC) spinning disk's governing equations applying principle of Hamilton which is based on minimum energy and ultimately have been solved employing numerical approach called generalized-differential quadrature-method (GDQM). Spinning disk's dynamic properties with different boundary conditions (BCs) are explained due to the curves drawn by Matlab software. Also, the simply-supported boundary conditions is applied to edges 𝜃=𝜋/2, and 𝜃=3𝜋/2, while, cantilever, respectively, is analyzed in R=Ri, and R0. The final results reveal that the GPLs' weight fraction, viscoelastic substrate, various GPLs' pattern, and rotational velocity have a dramatic influence on the amplitude, and vibration behavior of a GPLRC rotating cantilevered disk. As an applicable result in related industries, the spinning velocity impact on the frequency is more effective in the higher radius ratio's amounts.

Hot-Carrier로 인한 PMOSFET의 소자 수명시간 예측 모델링(I) (A Lifetime Prediction Modeling for PMOSFET degraded by Hot-Carrier (I))

  • 정우표;류동렬;양광선;박정태;김봉렬
    • 전자공학회논문지A
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    • 제30A권8호
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    • pp.49-56
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    • 1993
  • In this paper, we present a new lifetime prediction model for PMOSFET by using the correlation between transconductance degradation and substrate current influence. The suggested model is applied to a different channel structured PMOSFET, dgm/gm of both SC-PMOSFET and BC-PMOSFET appear with one straigth line about Qbib, therefore, this model is independent of channel structure. The suggested model is applied to a different drain structured SC-PMOSFET. Unlike S/D structured SC-PMOSFET, dgm/gm of LDD structured SC-PMOSFET appears with one straight line about Qb, therefore, this model is dependent of drain structure.

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다층 구조에 대한 새로운 strain 해석 모델 (A new strain analysis model in epitaxial multilayer system)

  • 장동현;심종인
    • 한국광학회:학술대회논문집
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    • 한국광학회 2007년도 하계학술발표회 논문집
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    • pp.237-238
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    • 2007
  • A new strain analysis model, so called the stress matched model, in an epitaxial multilayer system is proposed. The model makes it possible to know the strain, the stress, the elastic strain energy in each epitaxial layer. Analytical formulas of strain parameters in each epitaxial layer are derived under assumptions that the substrate thickness is finite and the in-plane lattice constant is the same for all epitaxial layers for dislocation free growth. As an example, the model is applied to a 405nm InGaN/InGaN multiple quantum well laser diode. Analysis result shows that AlxGa1-xN layer with Al mole fraction of 0.06 and the thickness of 6${\mu}m$ is one of good templates for a laser. In fact, this layer structure coincides with experimentally optimized one.

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Analysis of the Cross Talk Mechanism in Capacitive Micromachined Ultrasonic Transducers

  • Rho, Yongrae;Khuri-Yakub, Butrus T.
    • The Journal of the Acoustical Society of Korea
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    • 제20권3E호
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    • pp.31-37
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    • 2001
  • Finite element model of a cMUT is constructed using the commercial code ANSYS to analyze the cross talk mechanism. Calculation results of the complex load impedance seen by single capacitor cells are presented, and then followed by a calculation of the plane wave real load impedance seen by a parallel combination of many cells that are used to make a transducer. Cross talk between 1-D array elements is found to be due to two main sources: coupling through a Stoneley wave propagating at the transducer-water interface and coupling through Lamb waves propagating in the substrate. To reduce the cross talk level, the effect of various structural variations of the substrate are investigated, which include a change of its thickness and etched trenches or polymer walls between array elements.

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전도와 복사를 고려한 전자 장비의 자연대류 냉각에 관한 연구 (A Study on the Natural Convection Cooling of Electronic Device Considering Conduction and Radiation)

  • 이관수;백창인;김우승
    • 설비공학논문집
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    • 제7권2호
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    • pp.266-275
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    • 1995
  • A numerical investigation on the conduction-natural convection-surface radiation conjugate heat transfer in the enclosure having substrate and chips has been performed. A 2-dimensional simulation model is developed by considering heat transfer by conduction, convection and radiation. The solutions to the equation of radiative transfer are obtained by the discrete ordinates method using S-4 quadrature. The effects of Rayleigh number and the substrate-fluid thermal conductivity ratio on the cooling of chip are analyzed. The result shows that radiation is the dominant heat transfer mode in the enclosure.

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분자동역학을 이용한 나노 인덴테이션과 상변화 해석 연구 (Molecular Dynamic Simulation of Nano Indentation and Phase Transformation)

  • 김동언;손영기;임성한;오수익
    • 한국소성가공학회:학술대회논문집
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    • 한국소성가공학회 2003년도 추계학술대회논문집
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    • pp.339-346
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    • 2003
  • Molecular dynamic simulations of nano indentation on single-crystal silicon (100) surface were performed using diamond indentor. Silicon substrate and diamond indentor were modeled diamond structure with Tersoff potential model. Phase transformation of silicon, incipient plastic deformation, change of incident temperature distribution are investigated through the change of potential energy distribution, displacement-load diagram, the change of kinetic energy distribution and displacements of silicon atoms. Phase transformation is highly localized and consists of a high-density region surrounding the tip. Axial load linearly increased according to the indenting depth. Number of atoms with high kinetic energy increased at the interface between substrate and indentor tip.

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