• Title/Summary/Keyword: substrate layers

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Modeling on Hydrogen Effects for Surface Segregation of Ge Atoms during Chemical Vapor Deposition of Si on Si/Ge Substrates

  • Yoo, Kee-Youn;Yoon, Hyunsik
    • Korean Chemical Engineering Research
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    • v.55 no.2
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    • pp.275-278
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    • 2017
  • Heterogeneous semiconductor composites have been widely used to establish high-performance microelectronic or optoelectronic devices. During a deposition of silicon atoms on silicon/germanium compound surfaces, germanium (Ge) atoms are segregated from the substrate to the surface and are mixed in incoming a silicon layer. To suppress Ge segregation to obtain the interface sharpness between silicon layers and silicon/germanium composite layers, approaches have used silicon hydride gas species. The hydrogen atoms can play a role of inhibitors of silicon/germanium exchange. However, there are few kinetic models to explain the hydrogen effects. We propose using segregation probability which is affected by hydrogen atoms covering substrate surfaces. We derived the model to predict the segregation probability as well as the profile of Ge fraction through layers by using chemical reactions during silicon deposition.

A Study on the Laser Melting Deposition of Mixed Metal Powders to Prevent Interfacial Cracks (레이저 용융 금속 적층 시 결함 방지를 위한 혼합 분말 적층에 관한 연구)

  • Shim, D.S.;Lee, W.J.;Lee, S.B.;Choi, Y.S.;Lee, K.Y.;Park, S.H.
    • Transactions of Materials Processing
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    • v.27 no.1
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    • pp.5-11
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    • 2018
  • Direct energy deposition (DED) technique uses a laser heat source to deposit a metal layer on a substrate. Many researchers have used the DED technique to study the hardfacing of molds and dies. The aim of this study is to obtain high surface hardness and a sound bonding between the AISI M4 deposits and a substrate utilizing a mixed powder that contains M4 and AISI P21 powders. To prevent interfacial cracks between the M4 deposits and the substrate, the mixed powder is pre-deposited onto a JIS S45C substrate, before the deposition of M4 powders. Interfacial defects occurring between the deposits and substrate and changes in the microhardness of the intermediate layer were examined. Observations of the cross-sections of deposited specimens revealed that the interfacial cracks appeared in samples with one and two mixed layers regardless of the mixture ratio. However, the crack was removed by increasing the mixture ratio and the number of intermediate layers. Meanwhile, the microhardness in the mixed layer was found to decrease with increasing ratio of P21 powder in the mixture and that in the upper region of the deposited layers was approximately 800 HV, which was attributed to various alloying elements in the M4 powder.

Co-Firing of Low- and Middle- Permittivity Dielectric Tapes of Fabricating Low-Temperature Co-Fired Ceramics (LTCC용 저/중유전율 유전체 후막의 동시소성)

  • Choi Young-Jin;Park Jeong-Hyun;Ko Won-Jun;Park Jae-Hwan;Nahm Sahn;Park Jae-Gwan
    • Korean Journal of Materials Research
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    • v.14 no.10
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    • pp.731-736
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    • 2004
  • Herein, we report on the co-firing of a low-K wiring substrate and a middle-K functional substrate in LTCC. Firstly, we researched the sintering behavior and dielectric properties of the low-k wiring substrate comprised by alumina and glass frit with ${\varepsilon}_r$, of $\sim7$ and the middle-k functional substrate comprised by $Ba_{5}Nb_{4}O_{15}$ and glass frit with ${\varepsilon}_r$, of $20\sim30$. The warpage and delamination between the hetero layers of the low-K and the middle-K composition were also studied. In particular, physical matching of the hetero layers could be possible by adjusting of the sintering properties of the composition. We observed that an introduction of the glass frit to the low- and middle-K substrate gives rise to a minimization of an effect given by separation of the hetero layers, and modification of the fraction of the glass frit accompanied by a variation of the composition could control the sintering behavior and its beginning temperature. In the case of co-firing of the L03 as the low-K wiring substrate composition and the M03 as the middle-K functional substrate composition at $875^{\circ}C$, we could fabricate a desirable structure of hetero layers without any kinds of structural defects such as separation, warpage, delamination, pore trap, etc. We suppose that the co-firing techniques described in this study would provide a helpful method to fabricate a LTCC multi-functional for the next generation.

Tensile Analysis of Plasma Spray Coating Material by Classification of AE Signals (Acoustic Emission 파형분류에 의한 플라즈마 용사 코팅재의 인장해석)

  • ;;K. ONO
    • Journal of Ocean Engineering and Technology
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    • v.15 no.4
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    • pp.60-65
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    • 2001
  • Thermal spray coating is formed by a process in which melted particles flying with high speed towards substrate, then crash and spread on the substrate surface cooled and solidified in a very short time, Stacking of the particles makes coating. In this study, the exfoliation of $Al_2$O$_3$ and Ni-4.5wt.%Al thermally sprayed coating which were deposited by an atmospheric plasma spray apparatus are investigated using an AE method. A tensile test is conducted on notch specimens in a stress range below the elastic limit of substrate. The wave forms of AE generated from the three coating specimens can be classified by FFT analysis into two types which low frequency(type I waveform is considered to corresponds exfoliation of coating layers and type II waveform corresponds the plastic deformation of notch tip or the resultant fracture of coating. The fracture of the coating layers can estimate by AE event and amplitude, because AE features increase when the deformation generates.

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Stainless Steel Foil Substrates; Robust, Low-Cost, Flexible Active-Matrix Backplane Technology

  • Hong, Yong-Taek;Heiler, Gregory;Cheng, I-Chun;Kattamis, Alex;Wagner, Sigurd
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07b
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    • pp.892-896
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    • 2005
  • In this paper, key issues of stainless steel foil substrates for display applications have been described. We studied and analyzed technical issues on substrate passivation/planarization to control surface roughness and capacitive coupling from conductive substrates. A thick (either multiple or single) passivation/planarization layer needs to be applied on the nonelectronic-grade stainless steel substrate to provide a smooth surface and electrical insulation from the conductive substrate. Especially for large size, high-resolution display applications, low k and thick passivation/planarization layers should be used for appropriate capacitive coupling. Based on our initial study, a unit area capacitance of less than $2nF/cm^2$ of passivation/planarization layers is needed for 32" HD TV OLED displays.

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The Effect of Nitric Acid Catalyst on the Properties of Lead Titanate Thin Films by Sol Gel Spin Coating (졸겔 스핀 코팅에서 질산촉매가 티탄산연 박막의 물성에 미치는 영향)

  • 이전국;정형진;김종희
    • Journal of the Korean Ceramic Society
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    • v.28 no.11
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    • pp.859-864
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    • 1991
  • High quality lead titanate thin films were fabricated by spin coating on a silicon substrate. The resulting dried gel layers were uniform in thickness through 2$\times$2 $\textrm{cm}^2$ area, and polycrystalline perovskite structures developed almost crack free with a heat treatment above 50$0^{\circ}C$ in films with thickness above 360 nm. Metastable pyrochlore structures were observed in films with thickness of 160 nm when heat treated at 500 and $600^{\circ}C$, but these structure did not appear in films with thickness of 360 nm. The thickness dependence in crystal structure of films was studied. by varying the substrate condition and analyzing the interface between the film and substrate. In native oxide films on silicon stbstrates, amorphous dried gel layers were heterogeneously nucleated. Metastable cubic pyrochlore structure could be crystallized in amorphous native oxide.

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Surface Micromachining of TEOS Sacrificial Layers by HF Gas Phase Etching (HF 기상식각에 의한 TEOS 희생층의 표면 미세가공)

  • 장원익;이창승;이종현;유형준
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 1996.11a
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    • pp.725-730
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    • 1996
  • The key process in silicon surface micromachining is the selective etching of a sacrificial layer to release the silicon microstructure. The newly developed anhydrous HF/$CH_3$OH gas phase etching of TEOS (teraethylorthosilicate) sacrificial layers onto the polysilicon and the nitride substrates was employed to release the polysilicon microstructures. A residual product after TEOS etching onto the nitride substrate was observed on the surface, since a SiOxNy layer is formed on the TEOS/nitride interface. The polysilicon microstructures are stuck to the underlying substrate because SiOxNy layer does not vaporize. We found that the only sacrificial etching without any residual product and stiction is TEOS etching onto the polysilicon substrate.

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A Study on Electromagnetic Shield Coating of Ocular Lens (안경렌즈의 전자파 차폐 코팅에 관한 연구)

  • Kim, Ki-Hong;Park, Dae-Jin;Kim, In-Su
    • Journal of Korean Ophthalmic Optics Society
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    • v.11 no.2
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    • pp.115-119
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    • 2006
  • Electromagnetic shielding, transparent ITO coating layers have deposited on ocular lens substrate by magnetron sputtering. We investigated the effect induced by the substrate temperature on coating layer. The characteristics of the coating layers were analyzed using surface profiler, four-point probe, XRD, spectrophotometer and Auger Electron spectroscopy. As substrate temperature became higher, carrier concentration was increased and transmittance in the visible region was increased, too.

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Growth of $CaF_{2}:R^{+3}$ (R=Nd, Er) layers by molecular beam epitaxy (Molecular beam epitaxy법에 의한 희토류 이온$(Nd^{3+},\;Er^{3+})$ 첨가 $CaF_{2}$ 박막의 성장)

  • ;Yefen Chen;Tsuguo Fukuda
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.9 no.1
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    • pp.1-5
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    • 1999
  • The rare-earth ions ($R^{3+}$, R=Nd, Er) doped $CaF_{2}$ layers have been grown on $CaF_{2}$ (111) substrate by molecular beam epitaxy. The surface structure and the crystallinity of $CaF_{2}:R^{3+}$ layers depending on the doping concentration of $R^{3+}$ and layer thickness were studied by reflection high-energy electron diffraction (RHEED). In aspect of application as buffer layer in semiconductor-related hybrid structure, the lattice displacement between $CaF_{2}:R^{3+}$ layers and $CaF_{2}$ (111) substrate was investigated by X-ray rocking curve analysis.

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Thermal Analysis of Silicon Carbide Coating on a Nickel based Superalloy Substrate and Thickness Measurement of Top Layers by Lock-in Infrared Thermography

  • Ranjit, Shrestha;Kim, Wontae
    • Journal of the Korean Society for Nondestructive Testing
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    • v.37 no.2
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    • pp.75-83
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    • 2017
  • In this paper, we investigate the capacity of the lock-in infrared thermography technique for the evaluation of non-uniform top layers of a silicon carbide coating with a nickel based superalloy sample. The method utilized a multilayer heat transfer model to analyze the surface temperature response. The modelling of the sample was done in ANSYS. The sample consists of three layers, namely, the metal substrate, bond coat and top coat. A sinusoidal heating at different excitation frequencies was imposed upon the top layer of the sample according to the experimental procedures. The thermal response of the excited surface was recorded, and the phase angle image was computed by Fourier transform using the image processing software, MATLAB and Thermofit Pro. The correlation between the coating thickness and phase angle was established for each excitation frequency. The most appropriate excitation frequency was found to be 0.05 Hz. The method demonstrated potential in the evaluation of coating thickness and it was successfully applied to measure the non-uniform top layers ranging from 0.05 mm to 1 mm with an accuracy of 0.000002 mm to 0.045 mm.