• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.159-159
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• 2011

Among the semiconductor ternary compounds in the I-III-$VI_2$ series, $CulnS_2$ ($CulnSe_2$) are one of the promising materials for photovoltaic applications because of the suitability of their electrical and optical properties. The $CuInS_2$ thin film is one of I-III-$VI_2$ type semiconductors, which crystallizes in the chalcopyrite structure. Its direct band gap of 1.5 eV, high absorption coefficient and environmental viewpoint that $CuInS_2$ does not contain any toxic constituents make it suitable for terrestrial photovoltaic applications. A variety of techniques have been applied to deposit $CuInS_2$ thin films, such as single/double source evaporation, coevaporation, rf sputtering, chemical vapor deposition and chemical spray pyrolysis. This is the first report that $CuInS_2$ thin films have been prepared by Aerosol Jet Deposition (AJD) technique which is a novel and attractive method because thin films with high deposition rate can be grown at very low cost. In this study, $CuInS_2$ thin films have been prepared by Aerosol Jet Deposition (AJD) method which employs a nozzle expansion. The mixed fluid is expanded through the nozzle into the chamber evacuated in a lower pressure to deposit $CuInS_2$ films on Mo coated glass substrate. In this AJD system, the characteristics of $CuInS_2$ films are dependent on various deposition parameters, such as compositional ratio of precursor solution, flow rate of carrier gas, stagnation pressure, substrate temperature, nozzle shape, nozzle size and chamber pressure, etc. In this report, $CuInS_2$ thin films are deposited using the deposition parameters such as the compositional ratio of the precursor solution and the substrate temperature. The deposited $CuInS_2$ thin films will be analyzed in terms of deposition rate, crystal structure, and optical properties.

• Journal of the Korean Institute of Telematics and Electronics
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• v.21 no.5
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• pp.90-99
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• 1984

A onetimensional distribution of the temperature and the heat source in the SOI (silicon-on-insulator) multi-layer structure illuminated by tungsten lamps from both sides was obtained by solving the heat equation in steady state on a finite difference grid using successive over-relaxation method. The heat source distribution was obtained by considering such features as spectral components of the light source, multiple reflection at the internal interfaces, temperature and frequency dependence of the light absorption coefficient, etc. The front and back surface temperatures, which are boundary conditions for the heat equation, were derived from a requirement that they satisfy the radiation conditions. The radiation flux as well as the conduction flux was considered in modelling the thermal behaviour at the internal interfaces. Since the temperature and the heat source profiles are strongly dependent upon each other, the calculation of each profile was iterated using the updated profile of the other until they are consistent with each other. The experimental temperature at the front surface of the wafer as measured by Pyrometer was about 1200$^{\circ}$K, while the simulated temperature was 1120$^{\circ}$K.

• Journal of Korean Society of Forest Science
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• v.90 no.1
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• pp.43-54
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• 2001

Genetic differentiation of populations is resulted from the environmental and the genetic effects, and the interactions between them. Whereas, the major factors influencing to the genetic differentiation within populations are the gene flow induced by seed or pollen dispersial, the microsite heterogeneity, and the density-dependent distribution of individuals. For the purpose of studying spatial genetic structure and the distribution pattern of Korean pines(Pinus koraiensis), we set up one $100{\times}100m$ plot at a Korean pine stand in Quercus mongolica community on Mt. Jumbong in Korea. To estimate the coefficient of spatial autocorrelation as Moran's index and an analogue, simple block distance, isozyme markers were analyzed in 325 Korean pines. For 11 polymorphic loci observed in 9 enzyme systems, the average percentage of polymorphic loci, the observed and expected heterozygocity were 72.2% 0.200, and 0.251, respectively. It was revealed the excess of homozygotes was observed in the plot, which suggests that here may be more number of consanguineous trees than expected. On the basis of isozyme genotypes observed in this study, 325 trees were classified into 147 groups in which the maximum number of trees for one group was 34. From the distance class of 24-32m, the genetic heterogeneity began to increase. The variation of simple block distance against the growth performance by tree height and diameter also showed the same trend at 24~32m class. According to high fixation index(F=0.204), the spatial genetic structure within a stand, the analysis of the growth performance, and the distribution patterns of identical genotypes, we inferred that the genetic structure of a Korean pine stand in Mt. Jumbong has been maintained rather density-dependent mechanism than the gene flow, such as the pollen dispersial or the heavy input of seeds following the forest gaps. The genetic patchy size was determined between 24~32m, which suggests that the selection of individuals for the ex situ conservation of Korean pine in Mt. Jumbong may be desirable to be made with the spatial distance over 37 meters between trees.

• Journal of Sensor Science and Technology
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• v.9 no.1
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• pp.1-8
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• 2000

One of today's very critical and sensitive accurate accelerometer which can be used higher temperature than $200^{\circ}C$ and corrosive environment, is particularly demanded for automotive engine. Because silicon is a material of large temperature dependent coefficient, and the piezoresistors are isolated with p-n junctions, and its leakage current increase with temperature, the performance of the silicon accelerometer degrades especially after $150^{\circ}C$. In this paper, The temperature characteristic of a accelerometer using silicon on insulator (SOI) structure is studied theoretically, and compared with experimental results. The temperature coefficients of sensitivity and offset voltage (TCS and TCO) are related to some factors such as thermal residual stress, and are expressed numerically. Thermal stress analysis of the accelerometer has also been carried out with the finite-element method(FEM) simulation program ANSYS. TCS of this accelerometer can be reduced to control the impurity concentration of piezoresistors, and TCO is related to factors such as process variation and thermal residual stress on the piezoresistors. In real packaging, The avarage thermal residual stress in the center support structure was estimated at around $3.7{\times}10^4Nm^{-2}^{\circ}C^{-1}$ at sensing resistor. The simulated ${\gamma}_{pT}$ of the center support structure was smaller than one-tenth as compared with that of the surrounding support structure.

• The Korean Journal of Ecology
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• v.15 no.2
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• pp.103-115
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• 1992

This dissertation, which has been prepared in the region of cheju(33o31'N, 126o32'E) from may,1987 to appril, 1989, is to elucidate the dominant characteristics of early stages in secondary succession, by examining the life history of erigeron annuus for the seeding depth of a seed was dependent upon the degree of shading. That is, on the area of ocm,the more tense the shading was, the more germination percentage was increased, while, in the case of 1.5cm, it was somewhat increased, when shading bwcame ess and less tense. The rosette of e. annuus, through its relative light intensity was decreased by shading, up to 5% of natural light, showed some strong shade tolerance, which had no difficulty in matter production. The species diversity of mixed-species community was the highest in the middle of April, the lowest in the last of may. The dominance index was the highest in the late may, the lowest in the middle of April. Toward the end of may, the occupation rate of dominance species was the highest. There was a neutral relationship between intraspecific and interspecific, owing to the differentiation of its niche, temporally and spatially. Productive structure of the community revealed a narrow leaf type which was concentratively distributed in the mid part of community height. The relative light intensity of community ground surface was 6.1%, the leaf inclination 60o,the extinction coefficient(k) 0.4, biomass of community 1,045.6 g.d.w./m2,T/Rratio 9.3, C/Frate 7.0 and sumgermanition, shade toarance and community characteristics on erigeron annuus l.in chejumed leaf area index 3.88. through the various life cycles o e.annuus, we can say that it decreases mortality of seeding caused by some stress and disturbance, for germination lasts for a long time at any opportunity available, and it promotes population growth. The strong shade tolerance of a rosette and the variableness of a life from differentiate the niche between intraspecific and interspecific within the community, and avoid the direct competition between them, thus poromoting community growth.

• Journal of Advanced Marine Engineering and Technology
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• v.35 no.4
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• pp.414-420
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• 2011

Thermal stress analysis of a planar anode-supported SOFC considering electrochemical reactions has been performed under operating conditions where average current density varies from 0 to 2000 $A/m^2$. For the case of the 2000 $A/m^2$ operating condition, Structural stress analysis based on the temperature distributions obtained from the CFD analysis of the unit cell has also been done. From this one way Fluid-Structure Interaction(FSI) analysis, Maximum Von-Mises stress under negligible temperature gradient fields occurs when cell components are perfectly bonded. The maximum stress of the electrolyte, cathode and anode in a unit cell SOFC is 262.58MPa, 28.55MPa and 15.1MPa respectively. The maximum thermal stress is critically dependent on static friction coefficient.

• Tunnel and Underground Space
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• v.22 no.1
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• pp.22-31
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• 2012

In this study, scaled model tests were performed to investigate the stability of an asymmetrical twin tunnels constructed in rock mass comprising alternating layers of sandstone and shale. Each of tunnels had a differently shaped section, where the one was already constructed tunnel including lining structure but the other was planned to be under construction. Four types of test models which had respectively different pillar widths and loading conditions were experimented, where both crack initiating pressures and deformation behaviors around tunnels were investigated. The cracks of pillar mainly began to appear at the interfaces of alternating layers, following additional shear displacement between layers was confirmed as one of the most important factors of pillar failure in case of the model of pillar width 0.5D. The models with shallower pillar widths proved to be unstable because of lower crack initiating pressures and more tunnel convergences than the models with thicker pillar widths. The failure and deformation behaviors of tunnels were also dependent on the loading conditions, where the model of coefficient of lateral pressure 1.0 was more stable than the other model. Futhermore, the results of FLAC analysis were qualitatively coincident with the experimental results.

• Applied Chemistry for Engineering
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• v.5 no.3
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• pp.385-394
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• 1994

Numerical solutions were obtained to the model equations for various of the parameters characterizing the pore structure, effective internal diffusion, and the chemical reaction constant. The conversion was decreased with the cause of pore closure at the surface of reacting particles, reduction of porosity, surface area of reaction and effective diffusion coefficient in the solid with the progress of reaction. Total conversion was strongly dependent on the local conversion at surface. According to the decreasing of impregnated concentration of the copper oxide and the increase of the flue gases concentration, total conversion was increased. The conversion was affected by gas flow rate and pore size distribution in the reacting solid.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.4 s.33
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• pp.13-22
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• 2004

In MEMS devices, packaging induced stress or stress induced structure deformation become increasing concerns since it directly affects the performance of the device. In this paper, deformation behavior of MEMS gyroscope package subjected to temperature change is investigated using high-sensitivity moire interferometry. Using the real-time moire setup, fringe patterns are recorded and analyzed at several temperatures. Temperature dependent analyses of warpages and extensions/contractions of the package are presented. Linear elastic behavior is documented in the temperature region of room temperature to $125^{\circ}C$. Analysis of the package reveals that global bending occurs due to the mismatch of thermal expansion coefficient between the chip, the molding compound and the PCB. Detailed global and local deformations of the package by temperature change are investigated, concerning the variation of natural frequency of MEMS gyro chip.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.6
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• pp.554-559
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• 2005

Ni/Cr thin film is very interesting material as thin film resistors, filaments, and humidity sensors because their relatively large resistivity, more resistant to oxidation and a low temperature coefficient of resistance (TCR). These interesting properties of Ni/Cr thin films are dependent upon the preparation conditions including the deposition environment and subsequent annealing treatments. Ni/Cr thin films of 250 nm were deposited by DC magnetron sputtering on $Al_2O_3/Si$ substrate with 2-inch Ni/Cr (80/20) alloy target at room temperature for 45 minutes. Annealing treatments were performed at $400^{\circ}C,\;500^{\circ}C,\;and\;600^{\circ}C$ for 6 hours in air or $H_2$ ambient, respectively. The clear crystal boundaries without crystal growth and the densification were accomplished when the pores were disappeared in air ambient. Most of surface was oxidic including NiO, $Ni_2O_3$ and $Cr_xO_y$(x=1,2, y=2,3) after annealing in air ambient. The crystal growth in $H_2$ ambient was formed and stabilized by combination with each other due to the suppression of oxidized substance on film surface. Most oxidic Ni was restored when the oxidic Cr was present due to its stability in high-temperature $H_2$ ambient.