• Korean Journal of Materials Research
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• v.27 no.7
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• pp.369-373
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• 2017

Unidirectionally solidified TiAl alloys were prepared by optically-heated floating zone method at growth rates of 10 to 70 mm/h in flowing argon. The microstructures and tensile properties of these crystal bars were found to depend strongly on the growth rate and alloy composition. TiAl alloys with composition of 47 and 50 at.%Al grown under the condition of 10 mm/h showed $Ti_3Al({\alpha}_2)/TiAl({\gamma})$ layer structures similar to single crystals. As the growth rate increased, the alloys with 47 and 50 at.%Al compositions showed columnar-grain structures. However, the alloys fabricated under the condition of 10 mm/h had a layered structure, but the alloy with increased growth rate consisted of ${\gamma}$ single phase grains. The alloy with a 53 at.%Al composition showed a ${\gamma}$ single phase regardless of the growth rate. Room-temperature tensile tests of these alloys revealed that the columnar-grained material consisting of the layered structure showed a tensile ductility of larger than 4 % and relatively high strength. The high strength is caused by stress concentration at the grain boundaries; this enhances the secondary slip or deformation twinning across the layered structure in the vicinity of the grain boundaries, resulting in the appreciable ductility.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.682-683
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• 2006

Thermoelectric conversion efficiency of thermoelectric elements can be increased by using a structure combining n-type and p-type semiconductors. From the above point of view, attention was directed at ZnO as a candidate n-type semiconductor material and investigations were made. As the result, a dimensionless figure of merit ZT close to 0.28 (1073K) was obtained for specimens produced by the PCS (Pulse Current Sintering) method with addition of specified quantities of $TiO_2$, CoO, and $Al_2O_3$ to ZnO. It was found that the interstitial $TiO_2$ in the ZnO restrains the grain growth and CoO acts onto the bond between grains. The influence of the inclusion of $TiO_2$ and CoO onto the sintering behavior also was investigated.

• Proceedings of the KIEE Conference
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• 1989.07a
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• pp.314-318
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• 1989

Thin films of undoped and Ga-doped zinc oxide have been prepared by rf sputtering. The films deposited on substrates, which have a columnar structure with the c-axis perpendicular to the substrate surface, consist of very small crystal grains (500-1000 ${\AA}$). Considering doping effects, the electrical resistivity of Ga-doped films decreased by an order of $10^3$ compared to undoped films and the optical transmission was above 80% in the visible range and the optical band gap widened as the Ga content increased.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.132-132
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• 2011

The sheet resistance (Rs) of undoped GaN films on AlN/c-plane sapphire substrate was investigated in which the AlN films were grown by R. F. magetron sputtering method. The Rs was strongly dependent on the AlN layer thickness and semi-insulating behavior was observed. To clarify the effect of crystalline property on Rs, the crystal structure of the GaN films has been studied using x-ray scattering and transmission electron microscopy. A compressive strain was introduced by the presence of AlN nucleation layer (NL) and was gradually relaxed as increasing AlN NL thickness. This relaxation produced more threading dislocations (TD) of edge-type. Moreover, the surface morphology of the GaN film was changed at thicker AlN layer condition, which was originated by the crossover from planar to island grains of AlN. Thus, rough surface might produce more dislocations. The edge and mixed dislocations propagating from the interface between the GaN film and the AlN buffer layer affected the electric resistance of GaN film.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2005.05a
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• pp.69-72
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• 2005

The crystal structure of magnesium is hexagonal close-packed (HCP), so its formability is poor at room temperature. But formability is improved in high temperature with increasing of the slip planes. Purpose of this paper is to know about the mechanical properties of magnesium alloy (AZ31B), before warm and hot forming process. The mechanical properties were defined by the tension and compression tests in various temperature and strain-rate. As the temperature is increased, yield${\cdot}$ultimate strength, K-value, work hardening exponent (n) and anisotropy factor (R) are decreased. But strain rate sensitivity (m) is increased. As strain-rate increased, yield${\cdot}$ultimate strength, K-value, and work hardening exponent (n) are increased. Also, microstructures of grains fine away at high strain-rate. These results will be used in simulations and manufacturing factor for warm and hot forming process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.5
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• pp.410-416
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• 2001

KLN thin films were fabricated on Pt coated Si(100) wafer using an rf-magnetron sputtering method. The grown KLN thin film consists of 4-fold grains. In this experiment, the structure of 4-fold grained thin film was investigated using XRD and SEM measurements. Pt layer was also deposited using the rf-magnetron sputtering method,. XRD measurement showed that he Pt thin film has Gaussian distribution form with strong (111) direction orientation. The KLN thin film has preferred-orientation of (001) direction, and the peak consists of 2 separate peaks; one with broad FWHM and the other with narrow FWHM. The sharp peak is due to single crystal, and combining with Em results, the 4-fold grain consists of singel crystals with c-axis normal to substrate.

• Transactions of Materials Processing
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• v.14 no.7 s.79
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• pp.635-641
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• 2005

The crystal structure of magnesium was hexagonal close-packed (HCP), so its formability was poor at room temperature. But formability was improved in high temperature with increasing of the slip planes. Purpose of this paper was to know about the mechanical properties of magnesium alloy (AZ31B), before warm and hot forming process. The mechanical properties were defined by the tension and compression tests in various temperature and strain-rate. As the temperature was increased, yield·ultimate strength, K-value, work hardening exponent (n) and anisotropy factor (R) were decreased. But strain rate sensitivity (m) was increased. As strain-rate increased, yield·ultimate strength, K-value, and work hardening exponent (n) were increased. Also, microstructures of grains fined away at high strain-rate. These results would be used in simulations and manufacturing factor fer warm and hot forming process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.5
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• pp.497-501
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• 2004

The crystal structure of the GaN film on the AIN buffer layer grown by R. F sputtering with different thickness has been studied using X-ray scattering and transmission electron microscopy(TEM). The interface roughness between the AIN buffer layer and the epitaxial GaN film, due to crossover from planar to island grains, produced edge dislocations. The strain, coming from lattice mismatch between the AIN buffer layer and the epitaxial GaN film, produced screw dislocations. The density of the edge and screw dislocation propagating from the interface between the GaN film and the AIN buffer layer affected the electric resistance of GaN film.

• Bulletin of the Korean Chemical Society
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• v.25 no.2
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• pp.182-184
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• 2004

Fine $La_{2/3}Ca_{1/3}MnO_3$ nanocrystalline powders have been successfully prepared by modified citrate pyrolysis process. The obtained LCMO nanoscale grains have a mean particle size of about 30 nm under optimal treatment conditions. The particle size can be controlled by adjusting processing parameters, such as treatment temperature and calcination time. X-ray diffraction, SEM and magnetoresistance effect were employed to study the crystal structure, morphology and magnetic property of these nanosized powders. A novel MR effect (MR > 45% (0 K < T < 340 K)) at room temperature has been found.

• Korean Journal of Crystallography
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• v.11 no.4
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• pp.191-194
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• 2000

Bi/sub 12/SiO/sub 20/, Bi/sub 12/GeO/sub 20/ and Bi/sub 12/O/sub 20/ compounds with the sillenite crystal structure were synthesized and sintered into the dense ceramic bodies. An analyses of the microwave dielectric properties of the Si, Ge and Ti sillenites showed a permittivity (e) of ∼40 and a negative temperature coefficient of the resonant frequency for all analogues (from -20 to -40 ppm/K). The Qxf value of the Si and Ge sillenites was measured to be ∼8.000 GHz. The Ti analogue shows a significantly lower Qxf value(∼2.500 GHz) and is sensitive to the heat-treatment conditions. By increasing the sintering temperature the size of the grains increases, which correlates with an increase in the Qxf value.