• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.22 no.12
• /
• pp.1023-1027
• /
• 2009

Cadmium sulfide (CdS) thin film for flexible optical device applications were prepared at $H_2/(Ar+H_2)$ flow ratios on polyethersulfon (PES) flexible polymer substrates at room temperature by radio frequency magnetron sputtering technique. The CdS thin films deposited at room temperature showed a (002) preferred orientation and the smooth surface morphologies. Films deposited at a hydrogen flow ratio of 25% exhibited a photo- and dark-sheet resistance of about 50 and $2.7\;{\times}\;10^5\;{\Omega}/square$, respectively. From the result of the bending test, CdS films exhibit a strong adhesion with the PES polymer substrates and the $Al_2O_3$ passivation layer deposited on the CdS films only shows an increase of the resistance of 8.4% after exposure for 120 h in air atmosphere.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.30 no.3
• /
• pp.180-184
• /
• 2017

In this study, we examine the electrical properties of diketopyrrolopyrrole (DPP) containing polymer semiconductors that have been reported to show high performance with ambipolar characteristics. We prepared three different DPP based polymer semiconductors (PDPPTPT, PDPP3T, and PDPP2T-TT) and fabricated organic thin film transistors (OTFTs) with ambipolar polymer semiconductors as an active layer. All three DPP polymers showed only p-type properties at initial measurements. However, after annealing in vacuum oven for 24 hours, it was found that the DPP based polymers have both p-type and n-type properties. It is speculated that the residual impurities supposedly regarded as a strong electron trap source were eliminated during the vacuum process.

• Atmosphere
• /
• v.19 no.4
• /
• pp.331-344
• /
• 2009

A sensitivity study has been performed using ARPS (Advanced Regional Prediction System) version 5.2.10 in a downslope windstorm case of 12-13 February 2006. The purpose of this study was to find out the role of the inversion layer of temperature mainly in relation to the strength of the downslope winds over the Yeongdong region located downstream of the Taebaek mountains. Under the conditions of N (Brunt-$V{\ddot{a}}is{\ddot{a}}la$ frequency)=0.008 and N=0.016, the effects of the presence of the inversion layer, its variation of height of the layer, and the depth of the layer were identified. The sensitivity experiments suggested that the inversion layer effected the downstream wind speed of the mountains under both conditions of N=0.008 and N=0.016, and notably when the inversion layer was located near the mountain crest the downstream wind speed of the mountains was strong (~ $27ms^{-1}$) only under the condition of N=0.016. In addition, when the atmosphere was rather stable (N=0.016) and the depth of the layer was relatively thin (765 m) the downstream wind speed of the mountains was the strongest (~ $30ms^{-1}$) among the sensitivity experiments.

• 한국가시화정보학회:학술대회논문집
• /
• 2002.11a
• /
• pp.117-120
• /
• 2002

An experimental research has been carried out for flow control of the shock wave/turbulent boundary-layer interaction utilizing aeroelastic mesoflaps. Various shapes and thicknesses of the mesoflap are tested to achieve different deflections of the flap, and ail the results are compared to the solid-wall reference case without flow-control mechanism. Quantitative variation of skin friction has been measured downstream of the interactions using the laser interferometer skin friction meter, and qualitative skin friction distribution has been obtained by observing the interference fringe pattern on the oil-film surface. A strong spanwise variation in the fringe patterns with a narrow region of separation near the centerline is noticed to form behind the shock structure, which phenomenon is presumed partially related to three-dimensional flow structures associated with both the sidewalls and the bottom test surface. The effect of the shape of the cavity is also observed and it is noticed that the shape of the cavity is not negligible.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.07a
• /
• pp.207-210
• /
• 2005

In order to investigate the influence of the homo buffer layer on the microstructure of the ZnO thin film, undoped ZnO buffer layer were deposited on sapphire (0001) substrates by ultra high vaccum pulsed laser deposition (UHV-PLD) and molecular beam eiptaxy (MBE). After high temperature annealing at $600^{\circ}C$ for 30min, undoped ZnO buffer layer was deposited with various oxygen pressure (35~350mtorr). On the grown layer of undoped ZnO, Arsenic-doped(l, 3wt%) ZnO layers were deposited by UHV-PLD. The optical property of the ZnO was analyzed by the photoluminescence (PL) measurement. From $\Theta-2\Theta$ XRD analysis, all the films showed strong (0002) diffraction peak, and this indicates that the grains grew uniformly with the c-axis perpendicular to the substrate surface. Field emission scanning electron microscope (FE-SEM) revealed that microstructures of the ZnO were varied with oxygen pressure, arsenic doping level, and the deposition method of undoped ZnO buffer layers. The films became denser and smoother in the cases of introducing MBE-buffer layer and lower oxygen pressure during As-doped ZnO deposition. Higher As-doping concentration enhanced the columnar-character of the films.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.304-304
• /
• 2011

We investigated the effect of different spin direction of anti-ferromagnetic layer on the magnetic properties of ferromagnetic layer in Fe-NiO and Fe-CoO bi-layer systems. For Fe-NiO system, we prepared the clean MgO(001) surface half-covered with 20 nm Ag films as a substrate for magnetic layers. Then we grew NiO wedge layers on the substrate, and added 8 monolayer(ML) Fe layers on the wedge layer. We examined magnetic properties of the bi-layer system using the surface magnetic optical Kerr effect(SMOKE) and X-ray magnetic linear dichroism(XMLD). From SMOKE measurement we observed the coercivity enhancement due to the set-up of anti-ferromagnetic order of NiO films in both of the Fe/NiO/MgO(001) and Fe/NiO/Ag/MgO(001) system. The most remarkable results in our observation is that the coercivity enhancement of Fe/NiO/Ag/MgO(001) is much larger than that of Fe/NiO/MgO(001). XMLD experiments confirmed the out-of-plane spin direction of NiO layers in Fe/NiO/MgO(001) and in-plane spin-direction of NiO layers in Fe/NiO/Ag/MgO(001), and we concluded that the origin of large enhancement of coercivity is due to the strong parallel coupling between Fe layers and NiO layers. We also confirmed that this strong parallel coupling maintained across the thin Ag layer inserted between Fe and NiO layers. For Fe-CoO system, we prepared Fe/CoO/Ag(001) and Fe/CoO/MnO(001) systems and observed much larger coercivity enhancement in Fe/CoO/Ag(001).

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.171-171
• /
• 2012

We have studied the effects of plasma treatments on CdS buffer layers in CIGS thin film solar cells. The CdS layers were deposited on CIGS films by chemical bath deposition (CBD) method. The RF plasma treatments of the CdS thin films were performed with Ar, $O_2 and $N_2 gases, respectively. After plasma treatments, the solar cells with Al:ZnO/i-ZnO/CdS/CIGS structures were fabricated. The surface properties of the CdS/CIGS thin films after plasma treatments were investigated with SEM, EDX and AFM measurements. The electrical properties of manufactured solar cell were discussed with the results of current-voltage measurements. The plasma treatments have a strong influence on the open circuit voltage (VOC) and the fill factor of the solar cells. Finally, a correlation between the surface properties of CdS layer and the efficiencies of the CIGS thin film solar cells is discussed.

• Journal of the Korean institute of surface engineering
• /
• v.44 no.2
• /
• pp.68-73
• /
• 2011

A Ni-W thin-film was synthesized by electrodeposition, and its corrosion resistance and electrical surface conductivity were investigated. Amount of tungsten in the Ni-W thin-film increased linearly with current density during the electrodeposition, and crack-free and low-crystalline Ni-21 at.%W coating layer was obtained. Corrosion resistances of the Ni-W thin-films were examined with an anodic polarization method and a storage test in a strong sulfuric acid solution. As a result, the Ni-21 at.%W thin-film exhibited the greatest corrosion resistance, and maintained the electrical surface conductivity even after the severe corrosion test, which could be applicable as a surface treatment for advanced metallic bipolar plates in fuel cell or redox flow battery systems.

• Korean Journal of Materials Research
• /
• v.19 no.7
• /
• pp.349-355
• /
• 2009

Metal thin film patterns on a LTCC substrate, which was connected through inner via and metal paste for electrical signals, were formed by a screen printing process that used electric paste, such as silver and copper, in a conventional method. This method brought about many problems, such as non uniform thickness in printing, large line spaces, and non-clearance. As a result of these problems, it was very difficult to perform fine and high resolution for high frequency signals. In this study, the electric signal patterns were formed with the sputtered metal thin films (Ti, Cu) on an LTCC substrate that was coated with protective oxide layers, such as $TiO_2$ and $SiO_2$. These electric signal patterns' morphology, surface bonding strength, and effect on electro plating were also investigated. After putting a sold ball on the sputtered metal thin films, their adhesion strength on the LTCC substrate was also evaluated. The protective oxide layers were found to play important roles in creating a strong design for electric components and integrating circuit modules in high frequency ranges.

• Korean Journal of Crystallography
• /
• v.14 no.2
• /
• pp.93-104
• /
• 2003

The crystals of group-Ⅲ nitride semiconductors with wurtzite structure exhibit a strong polarity. Especially, GaN has characteristics of different growth rate, anisotropic electrical and optical properties due to the polarity. In this work, GaN epilayer was grown and the polarities of the crystals were observed by the chemical wet etching and SP-EFM. GaN thin films were deposited on c-plane A1₂O₃ substrate under the variations of growth conditions by HVPE such as the deposition temperature of the buffer layer, the deposition time, the ratio of Group-V and Ⅲ and the deposition temperature of the film. The adquate results were obtained under the conditions of 500℃, 90 seconds, 1333 and 1080℃, respectively. It is observed that the GaN layer grown without the buffer layer has N-polarity and the GaN layer grown on the buffer layer has Ga-polarity. Fine crystal single particles were grown on c-plane A1₂O₃ and SiO₂, layer. The external shape of the crystal shows ｛10-11｝｛10-10｝(000-1) planes as expected in the PBC theory and anisotropic behavior along c-axis is obvious. As a result of etching on each plane, (000-1) and ｛10-11｝planes were etched strongly due to the N-polarity and ｛10-10｝ plane was not affected due to the non-polarity. In the case of the crystal grown on c-plane A1₂O₃, two types of crystals were grown. They were hexagonal pyramidal-shape with ｛10-11｝plane and hexagonal prism with basal plane. The latter might be grown by twin plane reentrant edge (TPRE) growth.