• 전기학회논문지P
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• 제59권3호
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• pp.325-329
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• 2010

Capacitor has been used principally for the power factor compensation long ago. However now it does as passive filter to reduce harmonics of nonlinear load with reactor. Most of the customer's low-voltage feeder has been designed with approximately balanced and connected at the 3 phase four wire system. But voltage and current unbalance is appeared by the mixing operation of single or three phase load etc. The addition of reactor at the condenser may rise its terminal voltage. Voltage and current values above rating can act on electrical stress on the condenser. In this paper, we calculated and measured that voltage, current and capacity of condenser are changed under the voltage balance. We conclude that magnitude and deviation of phase voltage act on major point of electrical stress.

• 전력전자학회논문지
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• 제21권1호
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• pp.10-18
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• 2016

In this study, an efficient clamp is proposed to reduce the switch voltage stress of a forward converter. The proposed clamp consists of a conventional LC snubber, a tertiary winding, and a diode. When the switch is turned OFF, the magnetizing inductor energy of the transformer is recovered directly into the flyback output, which is the tertiary winding and diode network, instead of circulating in the LC snubber. Therefore, switch voltage stress and circulating current caused by the magnetizing inductor energy are reduced. This condition improves the efficiency of the forward converter with limited switch voltage stress. A theoretical analysis and the design guidelines of the proposed converter are provided. Experimental results are also reported.

• 조명전기설비학회논문지
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• 제12권3호
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• pp.114-123
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• 1998

The multi-resonant converter(MRC) minimizes a parasitic oscillation by using the resonant tank circuit absorbed parasitic reactances existing in a converter circuit. So it si possible that the converter operated at a high frequency has a high efficiency because the losses are reduced. Such a MHz high frequency applications provide a high power density [W/inch3] of the converter. But the resonant voltage stress across a switch of the resonant tank circuit is 4~5 times a input voltage. This h호 voltage stress increases the conduction loss because of on-resistance of a MOSFET with higher rating. Thus, in this paper we proposed the alternated multi-resonant converter (AT MRC) differ from the clamp mode multi-resonant converter and applicated it to the forward MRC. The AT forward MRC can reduce the voltage stress to 2~3 times a input voltage by using two series input capacitor. The control circuit is simple because tow resonant switches are driven directly by the output pulse of the voltage controled oscillator. This circuit type is verified through the experimental converter with 48V input voltage, 5V/50W output voltage/power and PSpice simulation. the measured maximum voltage stress is 170V of 2.9 times the input voltage and the maximum efficiency of 81.66% is measured.

• Journal of Power Electronics
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• 제13권2호
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• pp.186-196
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• 2013

This paper presents a low voltage-stress AC-linked charge equalizing system for balancing the energy in a serially connected, valve-regulated lead acid battery string using a modular converter that consists of multiple transformers coupled together. Each converter was coupled through an AC-linked bus to increase the overall energy transfer efficiency of the system and to eliminate the problem of the unbalanced charging of batteries. Previous solutions are based on centralized and modularized topologies. A centralized topology requires a redesign of the hardware and related components. It also faces a high voltage stress when the number of batteries is expanded. Modularized solutions use low-voltage-stress, double-stage, DC-linked topologies which leads to poor energy transfer efficiency. The proposed solution uses a low-voltage stress, AC-linked, modularized topology that makes adding more batteries easier. It also has a better energy transfer efficiency. To ensure that the charge equalization system operates smoothly and safely charges batteries, a small intelligent microcontroller was used in the control section. The efficiency of this charge equalization system is 85%, which is 21% better than other low-voltage-stress DC-linked charging techniques. The validity of this approach was confirmed by experimental results.

• 대한전기학회논문지:전기기기및에너지변환시스템부문B
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• 제54권11호
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• pp.540-546
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• 2005

This paper presents a boost circuit topology driving in high - frequency It solves the problem which arised from hard-switching in high-frequency using a period of resonant circuit and operating under the principle of ZCS turn-on and ZCZVS turn-off commutation schemes. In the existing circuit, it has the high voltage and current stress in free- wheeling diode. But in the proposed circuit, it has voltage and current stress which is lower than voltage and current stress of existing circuit with modifing a location of free-wheeling diode. In this paper, it explained the circuit operation of each mode and the waveform of each mode. Also the experiment results compare the voltage and current stress of free-wheeling diode in the existing circuit with the voltage and current stress of that in the proposed circuit. Moreover, it compares and analyzes the proposed circuit's efficiency with the existing circuit's efficiency according to the change of load current.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2008년도 하계학술대회 논문집
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• pp.505-507
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• 2008

A conventional active-clamp forward (ACF) converter is a favorable candidate in low-to-medium power applications. However, the switches suffer from high voltage stress, i.e., sum of the input voltage and the reset capacitor voltage. Therefore, it is not suitable for high input voltage applications such as a front-end converter of which the input voltage is about 400-$V_{dc}$. To solve this problem, three-switch ACF (TS-ACF) converter, which employs two main switches and one auxiliary switch with low voltage stress, is proposed. Utilizing low-voltage rated switches, the proposed converter is promising for high input voltage applications with high efficiency and low cost.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.428-431
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• 2003

In this paper, the stress induced leakage currents of thin silicon oxides is investigated in the ULSI implementation with nano structure transistors. The stress and transient currents associated with the on and off time of applied voltage were used to measure the distribution of high voltage stress induced traps in thin silicon oxide films. The stress and transient currents were due to the charging and discharging of traps generated by high stress voltage in the silicon oxides. The transient current was caused by the tunnel charging and discharging of the stress generated traps nearby two interfaces. The stress induced leakage current will affect data retention in electrically erasable programmable read only memories. The oxide current for the thickness dependence of stress current, transient current, and stress induced leakage currents has been measured in oxides with thicknesses between $113.4{\AA}$ and $814{\AA}$, which have the gate area 10-3cm2. The stress induced leakage currents will affect data retention and the stress current, transient current is used to estimate to fundamental limitations on oxide thicknesses.

• Transactions on Electrical and Electronic Materials
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• 제4권6호
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• pp.32-37
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• 2003

In this paper, the trap characteristics of thin silicon oxides is investigated in the ULSI implementation with nano structure transistors. The stress and transient currents associated with the on and off time of applied voltage were used to measure the distribution of high voltage stress induced traps in thin silicon oxide films. The stress and transient currents were due to the charging and discharging of traps generated by high stress voltage in the silicon oxides. The transient current was caused by the tunnel charging and discharging of the stress generated traps nearby two interfaces. The stress induced leakage current will affect data retention in electrically erasable programmable read only memories. The oxide current for the thickness dependence of stress current, transient current, and stress induced leakage currents has been measured in oxides with thicknesses between 113.4nm and 814nm, which have the gate area 10$\^$-3/ $\textrm{cm}^2$. The stress induced leakage currents will affect data retention, and the stress current and transient current is used to estimate to fundamental limitations on oxide thicknesses.

• 대한전기학회논문지:전기기기및에너지변환시스템부문B
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• 제53권9호
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• pp.576-583
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• 2004

This paper presents a buck circuit topology of high-frequency with a single switching device. It solved the problem which arised from hard-switching in high-frequency using a resonant snubber and operating under the principle of ZCS turn-on and ZVS turn-off commutation schemes. In the existing circuit, it has the voltage stress that is almost twice of input voltage in a free-wheeling diode. In the proposed circuit, it has the voltage stress that is lower than input voltage with modifing a location of free -wheeling diode. In this paper, it expained the circuit operation of each mode and analyzed feedback-loop stabilization. Also it confirmed the waveform of each mode with simulation result. The experiment result verified the simulation waveform and compared the voltage stress of a free -wheeling diode in the exsiting circuit with the voltage stress of that in the proposed circuit. Moreover, it compares and analyzes the proposed circuit's efficiency with the hard-switching circuit's efficiency according to the change of load current.

• 한국전기전자재료학회논문지
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• 제29권10호
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• pp.595-600
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• 2016

In this paper, the oxide currents of thin silicon oxides is investigated. The oxide currents associated with the on time of applied voltage were used to measure the distribution of voltage stress induced traps in thin silicon oxide films. The stress induced leakage currents were due to the charging and discharging of traps generated by stress voltage in the silicon oxides. The stress induced leakage current will affect data retention in memory devices. The oxide current for the thickness dependence of stress current and stress induced leakage currents has been measured in oxides with thicknesses between $109{\AA}$, $190{\AA}$, $387{\AA}$, and $818{\AA}$ which have the gate area $10^{-3}cm^2$. The oxide currents will affect data retention and the stress current, stress induced leakage current is used to estimate to fundamental limitations on oxide thicknesses.