• 한국초전도학회:학술대회논문집
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• v.11
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• pp.45-45
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• 2001

• Progress in Superconductivity
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• v.5 no.2
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• pp.94-97
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• 2004

Step-edge Josephson junctions (SEJ) have been fabricated on sapphire substrates with in situ deposited films of CeO$_2$ buffer layer and YBa$_2$Cu$_3$O$_{7}$ films on the low angle steps. Direct coupled SQUID magnetometers with the SEJ were formed on 1 cm X 1 cm R-plane sapphire substrates. Typical 5-${\mu}{\textrm}{m}$-wide Josephson junctions have R$_{N}$ of 3 Ω and I$_{c}$ of 50 $mutextrm{A}$ at 77 K. The direct coupled SQUID magnetometers were designed to have pickup coils of 50-${\mu}{\textrm}{m}$-wide 16 parallel loops on the 1 cm X 1 cm substrates with outer dimension of 8.8 mm X 8.8 mm. The SEJ SQUID magnetometers exhibit relatively low 1/f noise even with dc bias control, and could be stably controlled by flux-locked loops in the magnetically disturbed environment. Field noise of the do SQUID was measured to be 200∼300 fT/Hz$^{1}$2/in the white noise region and about 2 pT/Hz$^{1}$2/ at 1 Hz when measured with dc bias method.hod.d.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.133-133
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• 1999

We have fabricated and tested a simple circuit of the rapid single-flux-quantum(RSFQ) four-stage shift register using a single layer high-T$_c$ superconducting (HTS) YBa$_2Cu_3O_{7-x}$ (YBCO) thin film structure with 9 step-edge Josephson junctions. The circuit includes two read superconducting quantum interference devices(SQUID) and four stages. To establish a robust HTS RSFQ device fabrication process, we have focussed the reproducible process of sharp and straight step-edge formation as well as the ratio of film thickness to step height t/h. The spread of step-edge junction parameters was measured from each13 junctions with t/h=l/3, l/2, and 2/3 at various temperatures. We have demonstrated the simplified operation of the shift register at 65 K..

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2002.02a
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• pp.127-130
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• 2002

Step-edge dc SQUID magnetometers have been fabricated on sapphire substrate. Ce$O_{2}$ buffer layer and $YBa_{2}$$Cu_{3}$ $O_{7}$(YBCO) films were deposited in-situ on the low angle (~$35^{\circ}$)steps formed on the substrates. Typical 5-$\mu$m-wide junction has $R_{N}$ of 4 $\Omega$ and $I_{c}$ of 60 $\mu$A with $I_{c}$$R_{N}$ product of 240 $\mu$V at 77 K. According to applied bias current, depth of voltage modulation was changed and maximum voltage was measured 100~300 fT/$\checkmark$ Hz at 100 Hz, and about 1.5 pT/$\checkmark$ Hz at 1 Hz. For ac bias reversal method, field noise was decreased in the 1/f region. The QRS peak of magneto-cardiogram was measured 50 pT in the magnetically shielded room.

• Korean Journal of Materials Research
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• v.9 no.1
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• pp.86-91
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• 1999

We have fabricated high-$\textrm{T}_c$ superconducting $\textrm{YBa}_{2}\textrm{Cu}_{3}\textrm{O}_{7-x}$(YBCO) grain boundary junctions at a step-edge on (001) $\textrm{SrTiO}_3$(STO) substrates. A diamond-like carbon (DLC) film grown by plasma enhanced chemical vapor deposition were used as an ion milling mask to make steps on the STO (100) single crystal and was removed by an oxygen reactive ion etch process. The c-axis oriented YBCO and TO thin films were deposited epitaxially on the STO substrate with a step-edge by pulsed laser deposition. The grain boundary junctions were formed at the top and the bottom of the step. The junctions worked at temperatures above 77 K, and had I\ulcornerR\ulcorner products of 7.5mV at 16K and 0.3 mV at 77K, respectively. The I-V characteristics of these junctions showed the shape of the two noisy resistively shunted junction model.

• 한국초전도학회:학술대회논문집
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• v.13
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• pp.58-58
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• 2003

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.87-90
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• 1999

We have studied the annealing effects of 570 (SrTiO$_3$) single crystal substrate and the I-V properties of step-edge junctions after Ar ion milling. YBa$_2Cu_3O_7$ (YBCO) thin films are fabricated on the substrates by using pulsed laser deposition (PLD) and photolithography. The surface of Ar ion milled substrate was characterized with atomic force microscope (AFM) and scanning electron microscope (SEM) images. After the substrate was damaged by milling, the critical current density of YBCO thin films deposited on the substrate was lowered. The annealing of the damaged substrate at about 1000 $^{\circ}C$ recovered the critical current density to that before the milling. Futhermore the annealing helped junction formation due to high quality film and increased the yield rate for the fabrication of high quality step-edge junction.

• Korean Journal of Materials Research
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• v.13 no.6
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• pp.369-373
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• 2003

Magneto-optic Kerr Effect(MOKE), AFM and magnetoresistance measurements have been carried out on as-deposited and annealed Magnetic Tunnel Junctions(MTJs) with junction sizes 180, 250, 320 and 380 $\mu\textrm{m}$ in order to investigate the correlation among interlayer exchange coupling, surface roughness and junction size. Relatively irregular variations of coercivity $H_{c}$ (∼17.5 Oe) and interlayer exchange coupling $H_{E}$ (∼17.5 Oe) are observed over the junction in as-deposited sample prepared by DC magnetron sputtering. After annealing at $200^{\circ}C$, $H_{c}$ decreases to 15 Oe, while $H_{ E}$ increases to 20 Oe with smooth local variation. $H_{E}$ shows very good correlation with surface roughness across the junction in agreement with Neel's orange peel coupling. The increasing slope per $\mu\textrm{m}$ of normalized $H_{c}$ and $H_{E}$ are same near junction edge along free-layer direction irrespective of junction size, giving relatively uniform $H_{c}$ and $H_{ E}$ for wider junction size. Thickness profiles of the junctions measured with $\alpha$-step show increasingly flat top surface for larger junctions, indicating better uniformity for large. junctions in agreement with the normalized$ H_{c}$ and H$/_{E}$ curves. TMR ratios also increase with increasing junction size, indicating improvement for larger uniform junctions.

• 한국초전도학회:학술대회논문집
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• v.12
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• pp.32-32
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• 2002

• 한국초전도학회:학술대회논문집
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• v.10
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• pp.155-159
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• 2000

YBCO step-edge dc SQUID magnetometers on sapphire substrates have been fabricated. CeO2 buffer layer and YBCO films were deposited in situ on the low angle (${\sim}$35$^{\circ}$) steps formed on the sapphire substrates. Typical 5-${\mu}$m-wide junction has R$_n$ of 5 ${\omega}$ and I$_c$ of 50 ${\mu}$A with large I$_c$R$_n$ product of 250 ${\mu}$V at 77K. According to applied bias current, depth of voltage modulation was changed and maximum voltage was measured 16 ${\mu}$V. Field noise of do SQUID was measured 100${\sim}$300 fT/${\surd}^{Hz}$ in the 1 $^{kHz}$, and about 1.5 pT/${\surd}^{Hz}$ in the 1/f region. For ac bias reversal method, field noise was decreased in the 1/f region. The QRS peak of magnetocardiogram was measured 50 pT in the magnetically shielded room.