• Title/Summary/Keyword: stead spectrum

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Efficiency Improvement of an Electronic Ballast for HID Lamps (HID 램프용 전자식 안정기의 효율 개선)

  • 이성희;이치환;권우현
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.16 no.2
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    • pp.9-17
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    • 2002
  • A high-efficiency electronic ballast for HID lamps is presented. The ballast consists of a PFC and a resonant inverter. To reduce losses of the ballast, DC link voltage should be determined by taking into account the peak voltage of lamp and the maximum flux density should be kept 0.2[T] on all of inductors. AR inductor at bridge diode is employed in order to remove currant harmonics from PFC. An inductor is connected in series with an electrolytic capacitor at DC link to reject high-frequency current. The acoustic resonance is eliminated using the stead spectrum technique. The electronic ballast for 250[W] metal-halide discharge lamp is implemented and 96[%] efficiency, no acoustic resonance and low conducted EMI level are accomplished.

Fabrication of Diffraction Grating Mold Using Dot Pattern (도트 패턴을 이용한 회절 격자 금형 제작)

  • Noh, Ji-Whan;Lee, Jae-Hoon;Sohn, Hyon-Kee;Suh, Jeong;Shin, Dong-Sig;Joung, Young-Un
    • Laser Solutions
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    • v.9 no.3
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    • pp.1-5
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    • 2006
  • Diffraction grating is the optical device which has periodic pattern. Decorative logotypes is the one of application of diffraction grating. In this paper diffraction grating for decorative logotype is fabricated by dot pattern in stead of line pattern. A metallic mold for diffraction gratings is fabricated with a mode-locked 12 ps Nd:YVO4 laser. Laser pulses with a wavelength of 355nm are irradiated on the surface of NOK 80, a mold material, to generate dot patterns. In order to minimize the dot diameter, laser power is set just above the ablation threshold of NOK 80. Results show that the spectrum from the fabricated mold is good enough for some industrial application

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Fabrication of diffraction grating mold using dot pattern (도트 패턴을 이용한 회절 격자 금형 제작)

  • Noh, Ji-Whan;Lee, Jae-Hoon;Sohn, Hyon-Kee;Suh, Jeong;Shin, Dong-Sig;Joung, Youn-Gun
    • Proceedings of the Korean Society of Laser Processing Conference
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    • 2006.11a
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    • pp.114-117
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    • 2006
  • Diffraction grating is the optical device which has periodic pattern. Decorative logotypes is the one of application of diffraction grating. In this paper diffraction grating for decorative logotype is fabricated by dot pattern in stead of line pattern. A metallic mold for diffraction gratings is fabricated with a mode-locked 12 ps $Nd:YVO_4$ laser. Laser pulses with a wavelength of 355nm are irradiated on the surface of NOK 80, a mold material, to generate dot patterns. In order to minimize the dot diameter, laser power is set just above the ablation threshold of NOK 80. Results show that the spectrum from the fabricated mold is good enough for some industrial application.

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A Study on Performance Improvement of FIR Digital Filter using Modified Window Function (변형된 창함수를 이용한 FIR 디지털 필터의 성능 향상에 관한 연구)

  • Kim, Nam-Ho;Ku, Bon-Seok
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2007.06a
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    • pp.758-761
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    • 2007
  • Digital signal processing technique is applied in wide fields such as speech processing, image processing and spectrum analysis. Therefore, in order to do frequency selective operation digital filter is used in stead of analog filter and sharp filter characteristics can be implemented. Since finite impulse response (FIR) digital filter as nonrecursive type represents linear phase response characteristics and is always stable and is used in fields regarding wave information importantly such as data transmission. And due to frequency characteristics, in order to remove the Gibbs phenomenon generating around a discontinuous point, filter is designed through window function method. Therefore, in this paper to improve performance of FIR digital filter, a modified window function was applied. And the proposed method was compared with conventional methods using peak side-lobe and transition properties in simulations.

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Studies on the Optical and the Electrical Characterization of Organic Electroluminescence Devices of Europium Complex Fabricated with PVD(Physical Vopor Deposition) Technique (진공 증착법에 의하여 제작한 Europium complex 유기 박막 전기발광소자의 광학적.전기적 특성에 관한 연구.)

  • Lee, Myeong-Ho;Lee, Han-Seong;Kim, Yeong-Gwan;Kim, Jeong-Su
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.48 no.5
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    • pp.285-295
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    • 1999
  • Electroluminescent(EL) devices based on organic materials have been of great interest due to their possible applications for large-area flat-panel displays. They are attractive because of their capability of multi-color emission, and low operation voltage. An approach to realize such device characteristics is to use active layers of lanthanide complexes with their inherent extremely sharp emission bands in stead of commonly known organic dyes. In general, organic molecular compounds show emission due to their $\pi$-$\pi*$ transitions resulting in luminescence bandwidths of about 80 to 100nm. Spin statistic estimations lead to an internal quantum efficiency of dye-based EL devices limited to 25%. On the contrary, the fluorescence of lanthanide complexes is based on an intramolecular energy transfer from the triplet of the organic ligand to the 4f energy states of the ion. Therefore, theoretical internal quantum efficiency is principally not limited. In this study, Powders of TPD, $Eu(TTA)_3(phen) and AlQ_3$ in a boat were subsequently heated to their sublimation temperatures to obtain the growth rates of 0.2~0.3nm/s. Organic electrolumnescent devices(OELD) with a structure of $glass substrate/ITO/Eu(TTA)_3(phen)/AI, glass substrate/ITO/TPD/Eu(TTA)_3(phen)/AI and glass substrate/ITO/TPD/Eu(TTA)_3(phen)/AIQ_3AI$ structures were fabricated by vacuum evaporation method, where aromatic diamine(TPD) was used as a hole transporting material, $Eu(TTA)_3(phen)$ as an emitting material, and Tris(8-hydroxyquinoline)Aluminum$(AlQ_3)$ as an electron transporting layer. Electroluminescent(EL) and current density-voltage(J-V) characteristics of these OELDs with various thickness of $Eu(TTA)_3(phen)$ layer were investigated. The triple-layer structure devices show the red EL spectrum at the wavelength of 613nm, which is almost the same as the photoluminescent(PL) spectrum of $Eu(TTA)_3(phen)$.It was found from the J-V characteristics of these devices that the current density is not dependent on the applied field, but on the electric field.

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