• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.77-78
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• 2000

We verified the charged static electricity on LCD glass influences upon the etching uniformity of dry etching process by plasma. In the TFT-LCD manufacturing process, we mainly paid attention to eliminate the static electricity for TFT reliability. The static electricity caused the serious ununiformity of etching surface profile and etching rate in the dry etch process. Through our experiment on the made static electricity from -200V to -1000V, it was confirmed that the static electricity on LCD glass caused the etching rate variation of $1.5%{\sim}15%$. We recommend the etching process equipment for LCD manufacturing have to establish the soft X-ray exposure module system for eliminating the static electricity inside the loading and unloading chamber.

• Journal of Information Display
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• v.1 no.1
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• pp.52-58
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• 2000

We observed that static electricity has an influence on the etching unformity of dry etching process. When the static electricity was applied from-200[V]to-1000[V] on glass substrates, the etching rate uniformity was changed to 1.5%-15%. In this experiment, the soft X-ray to neutralize static electricity was adopted as ore of neutralization methods. As an experimental result, soft X-ray irradiation improved neutralization capability on the surface of LCD glass substrate within the short time, about 15-30sec. The difference of etching rate uniformity was below 0.5%.

• Textile Coloration and Finishing
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• v.9 no.6
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• pp.10-17
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• 1997

In order to improve the anti-static property of several hydrophobic fibers by sputter etching, polyester, polypropylene and poly(p-phenylene sulfide) have been etched by sputtering in the presence of argon gas and the resulting anti-static property investigated by half time decay, the time of water permeation, weight loss rate and scanning electron microscope(SEM). The temporary change and durability of anti-static property of samples treated with sputter etching were evaluated. The results were as follows; 1) Half time decay of samples treated with sputter etching were decreased about 18~38%. According to increasing sputter etching time, half time decay is decreased. 2) The wettability and weight loss rate of treated samples were increased remarkably. According to the SEM photographs, many microcraters on the substrate surface by the sputter etching were observed. 3) Although the washing treatment and the time elapsed after treatment are allowed longer, the variation of half time decay hardly can find.

• Journal of the Korean Ceramic Society
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• v.37 no.1
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• pp.82-89
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• 2000

In lithium silicate photosensitive glass-ceramics, the relationship between lithography time and crystallization, and the effect of addition of mineral acid in etching rate and pattern shape were investigated. Irradiation times for micropatterning were less than 5 minutes in which Ce3+ ions in glass were changed rapidly to Ce4+ with ultra violet light. Overexposure to ultra brought about blot of pattern by diffiraction of light. Addition of mineral acid to HF enhanced etching rate as compared with HF solution only. The addition of H2SO4 especially increased the etching rate by 70%. But the mixed solution also increased the etching rate of the noncrystallized portion of the glass and this resulted in heavy etching. Etching with ultrasonic wave showed higher etching rate than that with the static or fluid method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1296-1299
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• 2004

MIM capacitor has been investigated for the next generation DRAM. Conventional poly-Si bottom electrode cannot satisfy the requirement of electrical properties and comparability to the high k materials. New bottom electrode material such as ruthenium has been suggested in the fabrication of MIM structure capacitor. However, the ruthenium has to be planarized due to the backend scalability. For the planarization CMP has been widely used in the manufacture of integrated circuit. In this research, ruthenium thin film was Polished by CMP with cerium ammonium nitrate (CAN)base slurry. HNO3 was added on the CAN solution as an additive. In the various concentration of chemical and alumina abrasive, ruthenium surface was etched and polished. After static etching and polishing, etching and removal rate was investigated. Also microroughness of surface was observed by AFM. The etching and removal rate depended on the concentration of CAN, and HNO3 accelerated the etching and polishing of ruthenium. The reasonable removal rate and microroughness of surface was achieved in the 1wt% alumina slurry.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.3
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• pp.319-325
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• 2017

Through silicon via (TSV) technology is extensively used in 3D IC integrations. The special structure of the TSV is realized by CMP (Chemically Mechanical Polishing) process with a high Cu removal rate and, low dishing, yielding fine topography without defects. In this study, we investigated the electrochemical behavior of copper slurries with various inhibitors in the Cu CMP process for advanced TSV applications. One of the slurries was carried out for the most promising process with a high removal rate (${\sim}18000{\AA}/Min$ @ 3 psi) and low dishing (${\sim}800{\AA}$), providing good microstructure. The effects of pH value and $H_2O_2$ concentration on the slurry corrosion potential and Cu static etching rate (SER) were also examined. The slurry formula with a pH of 6 and 2% $H_2O_2$, hadthe lowest SER (${\sim}75{\AA}/Min$) and was the best for TSV CMP. A novel Cu TSV CMP process was developed with two CMPs and an additional annealing step after some of the bulk Cu had been removed, effectively improving the condition of the TSV Cu surface and preventing the formation of crack defects by variations in wafer stress during TSV process integration.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.132-135
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• 2004

현재 사용 되고 있는 Cu CMP slurry에서 pH 적정제의 역할은 slurry의 연마 거동을 결정 하는 중요한 요소이다. 일반적으로 사용 되고 있는 적정제로는 $NH_4OH$, KOH가 있다. 구리 CMP용 슬러리내에서 CMP 공정 중에 과산화수소 $(H_2O_2)$의 영향에 관한 연구는 있으나, 과산화수소의 농도 (vol %) 변화에 따라서 pH적정제가 하는 역할과 반응이 CMP 공정중에 미치는 영향에 관해서 연구된 바 없다. 이 논문에서는 pH 적정제가 과산화수소의 농도에 따라서 산성, 중성, 염기성에서 어떠한 변화를 일으키는지에 관해서 dynamic etch rate과 removal rate을 비교 하였고, static etch rate을 이용하여 Cu 표면이 etching 되는 속도를 비교 하였다. 그 결과, 산성과 중성에서는 $NH_4OH$와 KOH의 경향성은 비슷하였으나, 염기성에서는 KOH를 첨가한 경우 변화가 나타나지 않았다. 따라서, pH가 염기성으로 갈수록 과산화수소의 저 농도에서 $NH_4OH$의 영향이 더 커짐을 알 수 있었다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.3
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• pp.116-120
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• 2006

We have investigated plasma spray coated $Al_2O_3$ layers on Al-60 series substrates for development of wafer electrostatic chuck in semiconductor dry etching system. Samples were prepared without/with cooling bar on backside of samples, at various distances, and with different powder feed rates. There were many cracks and pores in the $Al_2O_3$ layers coated on Al-60 series substrates without cooling bar on the backside of samples. But the cracks and pores were almost disappeared in the $Al_2O_3$ layers on Al-60 series substrates coated with cooling bar on the back side of samples, 15 g/min. powder feed rate and various 60, 70, 80 mm working distances. Then the surface morphology was not changed with various working distances of 60, 70, 80 mm. When the powder feed rate was changed from 15 g/min to 20 g/min, the crack did not appear, but few pores appeared. Also the $Al_2O_3$ layer was coated with many small splats compared with $Al_2O_3$ layer coated with 15 g/min powder feed rate. The deposited rate of $Al_2O_3$ layer was higher when the process was done without cooling bar on the back side of sample than that with cooling bar on the back side of sample.