• Korean Journal of Materials Research
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• v.28 no.11
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• pp.659-662
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• 2018

We report the properties of infrared photodetectors based on two kinds of quantum dots(QDs): i) 2.0 ML InAs QDs by the Stranski-Krastanov growth mode(SK QDs) and ii) sub-monolayer QDs by $4{\times}[0.3ML/1nm\;In_{0.15}Ga_{0.85}As]$ deposition(SML QDs). The QD infrared photodetector(QDIP) structure of $n^+-n^-(QDs)-n^+$ is epitaxially grown on GaAs (100) wafers using molecular-beam epitaxy. Both the bottom and top contact GaAs layers are Si doped at $2{\times}10^{18}/cm^3$. The QD layers are grown with Si doping of $2{\times}10^{17}/cm^3$ and capped by an $In_{0.15}Ga_{0.85}As$ layer at $495^{\circ}C$. The photoluminescence peak(1.24 eV) of the SML QDIP is blue-shifted with respect to that (1.04 eV) of SK QDIPs, suggesting that the electron ground state of SML QDIP is higher than that of the SK QDIP. As a result, the photoresponse regime(${\sim}9-14{\mu}m$) of the SML QDIP is longer than that (${\sim}6-12{\mu}m$) of the SK QDIP. The dark current of the SML QDIP is two orders of magnitude smaller value than that of the SK QDIP because of the inserted $Al_{0.08}Ga_{0.92}As$ layer.

• Journal of Environmental Health Sciences
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• v.39 no.3
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• pp.248-255
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• 2013

Objectives: The purpose of this paper is to define the level of recycling standards and its process in paper scrap. As pollution is increased by improperly treated paper scrap, the government has recently strengthened the management of the paper scrap. Methods: In this study, the current status of paper scrap recycling was investigated through a 2012 field survey, and the classification and recycling standards for paper scrap in developed countries and institutions were also investigated through a literature review in order to introduce optimal recycling standards. Results: As a result, the contents of contaminants were identified as the most important recycling standard, and the contents of contaminants in paper scrap was measured at less than 1.0% at most companies. The recycling standard for paper scrap was determined to be below 3% contaminants in the case of paper and 5% in the case of board. In this study, recycling stage was determined by considering regulations on resources and practices in the field. Conclusions: The recycling standard for paper scrap was determined to be below 3% and 5% contaminants for paper and board, respectively.

• Journal of Korean Medical classics
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• v.22 no.3
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• pp.107-131
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• 2009

After having comparison, the Bunchon-ga in nine books -"Chimguchwiyeong(鍼灸聚英)", "Nengmunjeonsudong-injihyeol(凌門傳授銅人指穴)", "Chimgumundae(針灸問對)", "Gyeongrakgo(經絡考)", "Gyeongrakhoepyeon(經絡匯編)", "Geumchimbijeon(金針秘傳)", "Jagusimbeop-yogyeol(刺灸心法要訣)", "Chimgubongwon(鍼灸逢源)" "Chimgusinseo(鍼灸神書)", and invested the difference based on "Chimguhak(鍼灸學)", "WHO standard acupuncture point location" I got some conclusion like below. Two kinds of Bunchon-ga are similar in "Chimguchwiyeong", "Nengmunjeonsudong-injihyeol", and also in "Gyeongrakgo(經絡考)", "Gyeongrakhoepyeon(經絡匯編)", and "Geumchimbijeon(金針秘傳)" Bunchon-ga of twelve meridian is different from their order - Stomach meridian(胃經), Bladder meridian(膀胱經), Kidney meridian(腎經), Triple Energizer meridian(三焦經), and Gallbladder meridian(膽經). In nine kinds of Bunchon-ga, missing acupuncture points(漏落穴) are generally located on the first line of Bladder meridian(膀胱經) - from Daejeo(大杼) to Baekhwansu(白環兪), and Pungsi(風市), Haegye(解谿), Yangsi(羊矢), Geummaek(急脈) are not appeared in them, Hyeopdang(脇堂), Michung(眉衝), Yanghyeol(陽穴) are recorded. There are some parts adapted different way of proportional bone chon - from Yanggok(陽谿) to Gokji(曲池) in Large Intestine meridian[大腸經], from Sanggu(商丘) to Umreungcheon(陰陵泉) in Spleen meridian[脾經], and from Oegwan(外關) to Sadok(四瀆) in Triple Energizer meridian[三焦經]. The acupuncture points explained by structure, there are many different finger chons between some books. Bunchon on breast and abdomen, is generally explained by vertical, horizontal finger chon based on Governor vessel[任脈], vertical explanations of each book have little difference opinions, but horizontal have many. Especially, the locations of Eunmum(殷門), Bukeuk(浮郄) and Wiyang(委陽) are extremely different from "Chimguhak(鍼灸學)", and "WHO standard acupuncture point locations".

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.5
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• pp.1-5
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• 2011

In this paper, we optimize the gate field plate structure to improve breakdown characteristics of AlGaN/GaN HEMT by two-dimensional device simulator. We have simulated using three parameters such as field-plate length, types of insulator, and insulator thickness and thereby we checked change of the electric field distribution and breakdown voltage characteristics. As optimizing field-plate structure, electric fields concentrated near the gate edge and field-plate edge are effectively dispersed. Therefore, avalanche effect is decresed, so breakdown voltage characteristic is increased. As a result breakdown characteristics of optimized gate field-plate structure are increased by about 300% compared to those of the standard structure.

• Journal of Communications and Networks
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• v.15 no.5
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• pp.486-495
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• 2013

In this article, we suggest a two-dimensional genetic algorithm (GA) method that applies a cognitive radio (CR) decision engine which determines the optimal transmission parameters for multicarrier communication systems. Because a CR is capable of sensing the previous environmental communication information, CR decision engine plays the role of optimizing the individual transmission parameters. In order to obtain the allowable transmission power of multicarrier based CR system demands interference analysis a priori, for the sake of efficient optimization, a two-dimensionalGA structure is proposed in this paper which enhances the computational complexity. Combined with the fitness objective evaluation standard, we focus on two multi-objective optimization methods: The conventional GA applied with the multi-objective fitness approach and the non-dominated sorting GA with Pareto-optimal sorting fronts. After comparing the convergence performance of these algorithms, the transmission power of each subcarrier is proposed as non-interference emission with its optimal values in multicarrier based CR system.

• Proceedings of the KIEE Conference
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• 1999.07b
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• pp.507-509
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• 1999

In this paper, we propose a new fuzzy model identification method that can yield a successful fuzzy rule base for fundamental approximations. The method in this paper uses a set of input-output data and is based on a hybrid messy genetic algorithm (mGA) with a fine-tuning scheme. The mGA processes variable-length strings, while standard GAs work with a fixed-length coding scheme. For successfully identifying a complex nonlinear system, we first use the mGA, which coarsely optimizes the structure and the parameters of the fuzzy inference system, and then the gradient descent method which tine tunes the identified fuzzy model. In order to demonstrate the superiority and efficiency of the proposed scheme, we finally show its application to a nonlinear approximation.

• Archives of Pharmacal Research
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• v.13 no.2
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• pp.174-179
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• 1990

Second derivative (D2) spectrometry using ion-pair extraction technique was development for the determination of total glycyrrhetic acid (GA) in Glycyrrhizae Radix, Glycyr-rhizin (G) obtained from Glycyrrhizae Radix was hydrolyzed into GA in 2 N-HCI and methanol (1:1) and extracted from aqueous phase in the form of an ion-pair complex with tetrapentylammonium bromide (TPA) as a counter ion. Maximum D2 amplitude (Z value) was obtained when 1000-fold or greater molar ratio of TPA was used at pH 11. Reaction an effective extraction solvent of the ion-pair complex. The linearity of standard curve of ion-pair GA was obtained in the range of 4.120 $\mu$g/ml as GA. Assayed contents of GA in dry powder by D2 UV spectrometry and HPLC method were 5.31 $\pm$ 0.04% and 5.20 $\pm$ 0.008%, respectively.

• Proceedings of the Korean Magnestics Society Conference
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• 2002.12a
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• pp.146-147
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• 2002

III-V magnetic semiconductors initiated by GaMnAs growth at low temperatures via molecular beam epitaxy (MBE) has been a hot issue recently for their possible application to spntronics. GaMnN may be one of the candidates for room temperature operating ferromagnetic semiconductors as proposed by a theoretical calculation, However, since GaN was grown at very high temperatures above ∼750$^{\circ}C$ even with MBE, it is expected that the incorporation of Mn into GaN will be limited. (omitted)

• Bulletin of the Korean Chemical Society
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• v.16 no.7
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• pp.588-591
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• 1995

Single crystals of (ZnSe)1-x(CuMSe2)x (M=Al, Ga, or In) were grown by chemical vapor transport technique. Powdered polycrystalline samples of (ZnSe)1-x(CuMSe2)x (M=Al, Ga, or In) were also prepared by the direct combination of the elements. The chemical composition of these single crystals was determined by comparing their lattice parameters with those of the standard polycrystalline samples. The IR transmission range of single crystals of (ZnSe)1-x(CuMSe2)x (M=Al, Ga, or In) is slightly narrower than that observed for pure ZnSe. However, these materials still show good transmission in the long-wavelength IR range. The addition of small amounts of CuMSe2 (M=Al, Ga, or In) considerably increases the hardness of ZnSe.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.62-62
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• 2003

고밀도 유도결합 플라즈마(high density inductively coupled plasma) 식각은 GaAs 이종접합 양극성 트랜지스터(HBTs)와 고속전자 이동도 트랜지스터(HEMTs)와 같은 GaAs 기반 반도체의 정교한 패턴을 형성하는데 더욱 많이 이용되고 있다 본 연구는 고밀도 플라즈마 소스(source)인 평판형(planar) 고밀도 유도결합 플라즈마 식각장치를 이용하여 $BCl_3$ 와 $BCl_3/Ar$ 가스에 따른 GaAs 식각결과를 비교 분석하였다. 공정변수는 ICP 소스 파워를 0-500W, RIE 척(chuck) 파워를 0-150W, 공정압력을 0-15 mTorr 이었다. 그리고 가스 유량은 20sccm(standard cubic centimeter per minute)으로 고정시킨 상태에서 Ar 첨가 비율에 따른 GaAs의 식각결과를 관찰하였다. 공정 결과는 식각률(etch rate), GaAs 대 PR의 선택도(selectivity), 표면 거칠기(roughness)와 식각후 표면에 남아 있는 잔류 가스등을 분석하였다. 20 $BCl_3$ 플라즈마를 이용한 GaAs 식각률 보다 Ar이 첨가된 (20-x) $BC1_3/x Ar$ 플라즈마의 식각률이 더 우수하다는 것을 알 수 있었다. 식각률 증가는 Ar 가스의 첨가로 인한 GaAs 반도체와 Ar 플라즈마의 충돌로 나타난 결과로 예측된다. $BCl_3$ 와 $BC1_3/Ar$ 플라즈마에 노출된 GaAs 반도체 모두 표면이 평탄하였고 수직 측벽도 또한 우수하였다. 그리고 표면에 잔류하는 성분은 Ga와 As 이외에 $Cl_2$ 계열의 불순물이 거의 발견되지 않아 매우 깨끗함을 확인하였다. 이번 발표에서는 $BCl_3$ 와 $BCl_3/Ar$ 플라즈마를 이용한 GaAs의 건식식각 비교에 대해 상세하게 보고 할 것이다.