• 한국생물환경조절학회:학술대회논문집
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• 한국생물환경조절학회 2001년도 봄 학술발표논문집
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• pp.51-56
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• 2001

This study was carried out to research the effect of nutrient composition and GA4＋7 on growth, flower quality and bulb development in special hydroponics of cut tulip. Flowering of 'Cassini' was markedly accelerated by standard+GA4＋7, K200＋GA4＋7, N250＋GA4＋7 treatment, last internode was increased by N250 as compared with other treatment. For 'Christmas Marvel', flowering was promoted by K250＋GA4＋7, last infernode and total length were also increased with K250＋GA4＋7 as compared to other treatment. For 'Golden Apeldoorn', flowering was accelerated by K200＋GA4＋7, last internode was increased with N300＋GA4＋7 treatment and total length was increased in N250＋GA4＋7 treatment as compared with the standard plants. Bulb weight and number of 'Cassini', 'Christmas Marvel'and 'Golden Apeldoorn' were decreased by GA4＋7 as compared to non-treatment, and bulb diameter was not affected by GA4＋7.

• 한국정밀공학회지
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• 제20권11호
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• pp.117-126
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• 2003

GA(genetic algorithm) has a powerful searching ability and is comparatively easy to use and to apply as well. By that reason, GA is in the spotlight these days as an optimization skill for mechanical systems.$^1$However, GA has a low efficiency caused by a huge amount of repetitive computation and an inefficiency that GA meanders near the optimum. It also can be shown a phenomenon such as genetic drifting which converges to a wrong solution.$^{8}$ These defects are the reasons why GA is not widdy applied to real world problems. However, the low efficiency problem and the meandering problem of GA can be overcomed by introducing parallel computation$^{7}$ and gray code$^4$, respectively. Standard GA(SGA)$^{9}$ works fine on small to medium scale problems. However, SGA done not work well for large-scale problems. Large-scale problems with more than 500-bit of sere's have never been tested and published in papers. In the result of using the SGA, the powerful searching ability of SGA doesn't have no effect on optimizing the problem that has 96 design valuables and 1536 bits of gene's length. So it converges to a solution which is not considered as a global optimum. Therefore, this study proposes ExpGA(experience GA) which is a new genetic algorithm made by applying a new probability parameter called by the experience value. Furthermore, this study finds the solution throughout the whole field searching, with applying ExpGA which is a optimization technique for the structure having genetic drifting by the standard GA and not making a optimization close to the best fitted value. In addition to them, this study also makes a research about the possibility of GA as a optimization technique of large-scale design variable problems.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.334-337
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• 2002

The Quantum Hall Resistance(QHR) device which consists of GaAs/AlGaAs heterojunction structure is used for the realization of QHR Standard based on QHE. In order to characterize electrical contact resistances and dissipations of the device, it is slowly cooled down for eliminating thermal shock and unwanted noise. Then, the two properties are measured under 1.5 K and 5.15 T. Contact resistances are all within 1.2 Ω and longitudinal resistivities are all within 1 mΩ up to DC 90${\mu}$A. The results mean the device is operated well to realize the QHR Standard. To confirm it, the QHR Standard having the device is compared using a direct current comparator bridge with a 1 Ω resistance standard which the calibrated value is known from QHR standards maintained by other countries. The difference between them is agreed well within measurement uncertainty. It is thus considered that the properties of the device is estimated well and has good performance.

• 전자공학회논문지D
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• 제35D권7호
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• pp.88-93
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• 1998

For the self-aligned AlGaAs/GaAs HBTs, the surface states at the interface between the extrinsic base surface and the passivation nitride is a major cause of degradation of dc characteristics. In this paper the degradation mechanisms of self-aligned AlGaAs/GaAs HBT were analyzed, and GaAs HBTs, which employed an InGaP ledge emitter structure formed by the nonself-aligned process to cover the surface of the extrinsic base and reduce the surface states, produced high reliability. Accoridng to the acceleration lifetime test, the nonself-aligned InGaP/GaAs HBTs produced very reliable dc characteristics comparing with the self-aligned AlGaAs/GaAs HBTs. The activation energy was 1.97eV and MTTF $4.8{\times}10^{8}$ hrs at $140^{\circ}C$ which satisfied the MIL standard.

• Child Health Nursing Research
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• 제13권4호
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• pp.436-443
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• 2007

Purpose: An exploratory study was done to examine the validity of the new Ballard scale with extended scoring system(eNBS) in estimating gestational age(AG) in full-term newborns. Method: The eNBS scoring system was extended to include all numbers of total score of NBS and GA to allow a 3-days variation in GA estimatio compared to the original scale which has a 2-week variation due to the application of a 5-score interval for the total NBS score and only even numbers for GA. GA by eNBS(GA-eNBS) was compared with GA by LMP(GA-LMP) and GA by standard NBS(GA-sNBS) in 133 full-term newborns. Difference between GA-LMP and GA-eNBS was analyzed for each GA. Results: Positive correlations were observed in GA-sNBS and GA-eNBS with GA-LMP. There was no difference between GA-LMP and GA-eNBS at 39GA and 40GA. At 37GA and 38GA, GA-eNBS overestimated GA-LMP up to 1 week, while underestimating up to 1 week at 41GA. Conclusions: The accuracy of eNBS was validated within 3 days of variation in GA estimation at 39-40GA. Overestimation by eNBS suggests the possible acceleration of fetal maturity in premature newborns, while underestimation, of the deceleration of fetal maturity in postterm newborns.

• 한국진공학회지
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• 제1권1호
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• pp.121-125
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• 1992

Secondary Ion Mass Spectrometry (SIMS) is widely known as highly sensitive a surface analysis technique. Efforts for quantification have been hindered, however, by the presence of matrix effects. Here we describe a new technique for the quantitative analysis of AlxGa1-xAs. Instead of Al+, Ga+, As+ ions, CsX+ ions (X=Al, Ga, As) have been detected. Intensity of these molecular ions appears to be much less affected by matrix effects. We have successfully accomplished the compositional analysis with standard deviation better than 2 percent.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.366-370
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• 2002

GaAs has become a very popular material for the fabrication of high frequency, low noise and microwave power devices. GaAs devices are also well suited for high temperature operation because of the large band gap of this material. The standard GaAs technology and device structures have to be modified for stable operation at high temperature. In this paper, AlGaAs/GaAs HBT considering stable ohmic contact at high temperature as well as thermal effect such as self-heating effect are introduced. All the data obtained study will be used as input data for the simulator and the result will be compared with an analytical model available in this study,

• 전자공학회논문지A
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• 제30A권3호
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• pp.61-66
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• 1993

The interface properties of Fluoride/GaAs structures were investigated. It was foung that rapid thermal annealing(RTA) typically 800-850$^{\circ}C$for 1 min, was useful for improving the interface properties of that structures. The analysis by means of SIMS indicated that interdiffusion of each constitutional atom through the interface was negligible. The interfacial atom bonding model for RTA treatment was proposed. Bases on these results, inversion-type GaAs MISFET was fabricated using standard planar technologies.

• 한국전기전자재료학회논문지
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• 제21권10호
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• pp.885-888
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• 2008

We present simulation results on DC characteristics of AlGaN/GaN HEMTs having trench shaped source/drain Ohmic electrodes. In order to reduce the contact resistance in the source and drain region of the conventional AlGaN/GaN HEMTs and thereby to increase their DC output power, we applied narrow-shaped-trench electrode schemes whose size varies from $0.5{\mu}m$ to $1{\mu}m$ to the standard AlGaN/GaN HEMT structure. As a result, we found that the drain current was increased by 13 % at the same gate bias condition and the transconductance (gm) was improved by 11 % for the proposed AlGaN/GaN HEMT, compared with those of the conventional AlGaN/GaN HEMTs.

• Electronic Materials Letters
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• 제14권6호
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• pp.784-792
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• 2018

In this letter, a standard deviation based optimization technique has been applied on High Resolution X-ray Diffraction symmetric and asymmetric scan results to accurately determine the Aluminum molar fraction and lattice relaxation of Molecular Beam Epitaxy grown compositionally graded Aluminum Gallium Nitride (AlGaN)/Aluminum Nitride/Gallium Nitride (GaN) heterostructures. Mathews-Blakeslee critical thickness model has been applied in an alternative way to determine the partially relaxed AlGaN epilayer thicknesses. The coupling coefficient determination has been presented in a different perspective involving sample tilt method by off set between the asymmetric planes of GaN and AlGaN. Sample tilt is further increased to determine mosaic tilt ranging between $0.01^{\circ}$ and $0.1^{\circ}$.