• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.464-466
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• 2000

AIN thin films have been prepared by reactive sputtering method, using facing targets sputtering system with a DC power supply which can deposit a high quality thin film and control deposition condition in all range of nitrogen. The crystallographic characteristics of AIN thin films on N$_2$/Ar ratio was investigated by alpha-step and X-ray diffraction. As a result, the AIN film deposited at the pressure ratio of the nitrogen of 30% revealed strong X-ray diffraction intensity under substrate temperature 25$^{\circ}C$ and applied current 0.4A.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.897-900
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• 2000

Annealing dependencies of the fatigue properties of SrBi$_2$Ta$_2$$O_{9}$ thin films were observed as function of substrate temperature(400-50$0^{\circ}C$) by the rf magnetron sputtering method. With increasing annealing temperature from $600^{\circ}C$ to 85$0^{\circ}C$, flourite phase was crystalized to $650^{\circ}C$ and Bi-layered perovskite phase was crystalized above $700^{\circ}C$. The fatigue characteristics of SBT thin films deposited on Pt/TiO$_2$/SiO$_2$/Si substrate did not change up to 101o switching cycles.s.

• Electrical & Electronic Materials
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• v.9 no.7
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• pp.727-732
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• 1996

In the present paper, the Cu films 4.mu.m thick were deposited by RF magnetron sputtering method on Si wafer. The Cu films deposited at a condition of 100W, 10mtorr exhibited a low electrical resistivity of 2.3.mu..ohm..cm and densed microstructure, poor adhesion. The Cu films grown by 200W, 20mtorr showed a good adhesion property and higher electrical resistivity of 7.mu..ohm..cm because of porous columnar microstructure. Therefore, The Cu films were deposited by double layer deposition method using RF magnetron sputtering on Si wafer. The dependence of the electrical resistivity, adhesion, and reflectance in the CU films [C $U_{4-d}$(low resistivity) / C $U_{d}$(high adhesion) / Si-wafer] on the thickness of d has been investigated. The films formed with this deposition methods had the low electrical resistivity of about 2.6.mu..ohm..cm and high adhesion of about 700g/cm.m.m.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1480-1483
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• 2005

Transparent thin composite films (TCFs) were deposited on OLED devices by means of RF sputtering method and their passivation-properties were evaluated by comparing to the e-beam evaporating method. This composite film formed by mixed ratio of MgO (3wt %): $SiO_2$ (1wt %) was developed from pallet as a source of e-beam evaporator to 6-inch size target for sputtering in order to apply for large-sized organic display devices. Water Vapor Transmission Rates (WVTR) of the deposited films were measured as a function of thickness to assess the effectiveness of this film as a passivation layer and it applied to real devices. From this study, we can confirm that the passivation layer formed by TCFs using RF sputtering method sufficiently shows the potentiality of application to passivation layer for organic display devices.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.65 no.3
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• pp.216-218
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• 2016

In this study, we used not chemical and physical synthesis method but the solution plasma sputtering method in the synthesis of silver nano-particles. Synthesis of all the silver nano-particles was conducted for 1hour in 360 ml of distilled water and characteristics of changing the input voltage and frequency of the synthesised silver nano-particles by using the solution plasma sputtering method were analyzed through FE-SEM(Field Emission-Scanning Electron Microscope). We changed the input voltage from 8 kV to 10 kV in steps of 1 kV, input frequency from 20 kHz to 30 kHz in steps of 5 kHz in the solution plasma reactor with the advanced device which can control the DC voltage and frequency. We confirmed that the size of silver nano-particles were larger according to the change of the input voltage and frequency.

• Proceedings of the Materials Research Society of Korea Conference
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• 1994.11a
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• pp.14-14
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• 1994

• Proceedings of the Materials Research Society of Korea Conference
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• 1999.11a
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• pp.124-124
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• 1999

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.05a
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• pp.96-96
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• 1998

• Proceedings of the Materials Research Society of Korea Conference
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• 2001.05a
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• pp.78-78
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• 2001

• Proceedings of the Materials Research Society of Korea Conference
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• 1995.11a
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• pp.76-76
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• 1995