• Journal of Integrative Natural Science
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• v.11 no.4
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• pp.209-211
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• 2018

A zinc oxide thin film doped with aluminum was deposited by RF sputtering. The deposition temperature of the sputter chamber was kept constant at $350^{\circ}C$, the power supplied to the chamber was 75 W, the oxygen flow rate was changed to 10 sccm and 20 sccm, and the thin film deposition time was changed to 120 and 180 minutes. The structures of the deposited zinc oxide thin films were analyzed by van der Waals method using an X-ray diffractometer. As a result of X-ray diffraction, the amount of oxygen supplied to the zinc oxide thin film increased, and the surface growth of the (002), (400), (110), and (103) planes showed a change with increasing deposition time. Moreover, as the amount of oxygen supplied to the zinc oxide thin film increased, their shape was observed to be coarse, and the thin film' s particles shape was correlated with the oxygen chemical defect introduced.

• Transactions on Electrical and Electronic Materials
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• v.5 no.1
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• pp.11-14
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• 2004

An rf triode magnetron sputtering system is designed and installed its construction in vacuum chamber. In order to calibrate the rf triode magnetron sputtering for thin films deposition processes, the effects of different glow discharge conditions were investigated in terms of the deposition rate measurements. The basic parameters for calibrating experiment in this sputtering system are rf power input, gas pressure, plasma current, and target-to-substrate distance. Because a knowledge of the deposition rate is necessary to control film thickness and to evaluate optimal conditions which are an important consideration in preparing better thin films, the deposition rates of copper as a testing material under the various sputtering conditions are investigated. Furthermore, a triode sputtering system designed in our team is simulated by the SIMION program. As a result, it is sure that the simulation of electron trajectories in the sputtering system is confined directly above the target surface by the force of E${\times}$B field. Finally, some teats with the above 4 different sputtering conditions demonstrate that the deposition rate of rf triode magnetron sputtering is relatively higher than that of the conventional sputtering system. This means that the higher deposition rate is probably caused by a high ion density in the triode and magnetron system. The erosion area of target surface bombarded by Ar ion is sputtered widely on the whole target except on both magnet sides. Therefore, the designed rf triode magnetron sputtering is a powerful deposition system.

• Proceedings of the KSME Conference
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• 2007.05a
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• pp.1617-1620
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• 2007

This paper presents a magnetostrictive transpositioner and its fabrication process. To get a transposition movement without shifting or twisting, it is designed as an array type. To fabricate the suggested design, micromachining and selective DC magnetron sputtering processes are combined. TbDyFe film is sputter-deposited on the back side of the bulk micromachined transpositioner, with the condition as: Ar gas pressure below $1.2{\times}10^{-9}$ torr, DC input power of 180W and heating temperature of up to $250^{\circ}C$ for the wireless control of each array component. After the sputter process, magnetization and magnetostriction of each sample are measured. X-ray diffraction studies are also carried out to determine the film structure and thickness of the sputtered film. For the operation, each component of the actuator has same length and out-of-plane motion. Each component is actuated by externally applied magnetic fields up to 0.5T and motion of the device made upward movement. As a result, deflections of the device due to the movement for the external magnetic fields are observed.

• Korean Journal of Materials Research
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• v.2 no.6
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• pp.443-451
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• 1992

Effects of various pretreatments on the nucleation of CVD-W deposited on the reactively sputter-deposited TiN was investigated. Incubation period of nucleation and deposition rate decreased by the pretreatment of Ar rf-sputter etching for the depth below 300k, but they increased for the etchig depth over 200A. The preteatment of Ar ion implantation decreased the incubation period of nucleation, but increased deposition rate. Also Si$H_4$flushing pretreatment decreased the incubation period of nucleation slightly due to the absorption of Si by TiN surface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.307-310
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• 2000

Antimony doped tin oxide (ATO) thin films were deposited at room temperature by ion-beam sputter deposition (IBSD) technique in oxidizing atmosphere utilizing Sb and Sn metal targets. Effect of Sb doping concentration, film thickness and heat treatment on electrical and optical properties was investigated. The thickness of as-deposited films was controlled approximately to $1500{\AA}$ or $2000{\AA}$, and Sb concentration to 10.8 and 14.9 wt%, as determined by SEM and XPS analyses. Heat treatment was performed at the temperature from $400^{\circ}C$ to $600^{\circ}C$ in flowing $O_2$ or forming gas. The resulting ATO films showed widely changing electrical resistivity and optical transmittance values in the visible spectrum depending on the composition, thickness and firing condition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.301-301
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• 2008

Ion beam (IB)-induced alignment of inorganic materials has been investigated intensively as it provides controllability in a nonstop process for producing high-resolution displays[1][2]. LC orientation via ion-beam (IB) irradiation on the nitrogen doped diamond like carbon (NDLC) thin film deposited by physical deposition method-sputtering was embodied. The NDLC thin film that was deposited by sputter showed uniform LC alignment at the 1200eV of the ion beam intensity. The pretilt angle of LC on NDLC thin films was measured with various IB exposure time and angle. The maximum pretilt angle were showed with IB irradiation angle of $45^{\circ}$ and exposure time of 62.5 sec, respectively. To show NDLC thin film stability in high temperature, thermal stability test was proceeded. The uppermost of the thermal stability of NDLC thin film was $200^{\circ}C$. In this investigation, the electro-optical (EO) characteristics of LC on NDLC thin film were measured.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.73-73
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• 1999

A large area negative metal ion beam source is developed. Kinetic ion beam of the incident metal ions yields a whole nucleation and growth phenomena compared to the conventional thin film deposition processes. At the initial deposition step one can engineer the surface and interface by tuning the energy of the incident metal ion beams. Smoothness and shallow implantation can be tailored according to the desired application process. Surface chemistry and nucleation process is also controlled by the energy of the direct metal ion beams. Each individual metal ion beams with specific energy undergoes super-thermodynamic reactions and nucleation. degree of formation of tetrahedral Sp3 carbon films and beta-carbon nitride directly depends on the energy of the ion beams. Grain size and formation of polycrystalline Si, at temperatures lower than 500deg. C is obtained and controlled by the energy of the incident Si-ion beams. The large area metal ion source combines the advantages of those magnetron sputter and SKIONs prior cesium activated metal ion source. The ion beam source produces uniform amorphous diamond films over 6 diameter. The films are now investigated for applications such as field emission display emitter materials, protective coatings for computer hard disk and head, and other protective optical coatings. The performance of the ion beam source and recent applications will be presented.

• Bulletin of the Korean Chemical Society
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• v.33 no.7
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• pp.2333-2337
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• 2012

We report the synthesis and thermal annealing of Si-core/ZnO-shell nanorods using a two-step process comprising the metal-assisted electroless etching of Si and the sputter deposition of ZnO. Transmission electron microscopy and X-ray diffraction analysis showed that the cores of the annealed core-shell nanorods were single crystal diamond cubic-type Si, whereas the shells of the annealed core-shell nanorods were single crystal wurtzite-type ZnO. The PL spectra of Si nanorods consisted of a broad red emission band and a weaker blue emission band. The major emission band of Si nanorods was shifted from 700 nm (in the red region) to 440 nm (in the violet region) by ZnO coating. The violet emission of the core-shell nanorods was enhanced in intensity considerably by annealing in an oxidizing atmosphere. The origin of the PL enhancement by annealing is also discussed.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2008.11a
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• pp.15-16
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• 2008

In case manufacturing COF, through hole should be made to be used for a pathway connecting the conductive layers of its both faces. In case Cu-plating inside of through hole with electroless plating way, contact between Cu and PI film gets bad to be fell apart from PI by the impact of applying to the electric devices. Therefore, after sputtering is applying on inner through hole, then a method to perform electroplating process. In this study, after changing sputtering condition to manufacture FCCL, we looked the changeability of the upper PI and inner hole Cu layers. Making use of RF Magnetron sputtering equipment, we coated Cu thin film and Cu-plated on it through electroplating. After cold-mounting the completed FCCL, we examined hole section through an optical microscope. From the result of test, with parameters deposition pressure and deposition time, both the thickness of the hole plated layer and PI plated upper layer increased at regular rate, increasing the thickness of Cu sputter layer. However, from the result of test in increasing RF-power, we could know the increment rate of hole plated layer is considerably greater than that of PI plated upper layer. Therefore, we finally acquired good result; if you want only to increase the plated layer of inner hole, it's much better to increase RF-power.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.612-614
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• 1993

Sputtering requires a way to bombard the target with sufficient momentum. Positive ions are the most convenient source since their energy and momentum can be controlled by applying a potential to the target. Although many types of discharges have been used for sputtering, magnetrons are now the most widely used because of the high ion current densities. Namely, plasma near the target electrode is confined by magnetic field using permanent magnet, so that the collision probability is increased. It is important to develop RF magnetron sputtering system which has many excellent merits compared with conventional methods. Our study aims to develop 1 kW RF source(13.56 MHz, TR type) and to accumulate the design and construction technology of RF magnetron sputter-deposition system. We developed 1 kW RF sputtering system to deposit thin film. These films are deposited by this RF source matched by auto-matching system using primarily argon gas. Target of Au, Ni, Al, and $SiO_2$ was well deposited on the argon pressure of 5-10 mTorr.