• Title/Summary/Keyword: spin-structure

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Electrical Properties of Manganite Thin Films Prepared by Spin Spray Method (스핀 스프레이 법으로 제조한 망가나이트 박막의 전기적 특성)

  • Jeon, Chang Jun;Jeong, Young Hun;Yun, Ji Sun;Park, Woon Ik;Paik, Jong Hoo;Hong, Youn Woo;Cho, Jeong Ho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.30 no.1
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    • pp.17-22
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    • 2017
  • Effects of pH value and deposition time on the electrical properties of (NMC) Ni-Mn-Cu-O and (NMCC) Ni-Mn-Cu-Co-O thin films were investigated. The NMC and NMCC films were prepared by spin spray method. The crystal structure and thickness of the annealed films were changed by the pH value and deposition time, respectively. A single phase of cubic spinel structure was confirmed for the annealed films deposited from solutions with pH 7.6. The resistivity of the annealed films was affected by the crystal structure and microstructure. The TCR (temperature coefficient of resistance) was dependent on the $Mn^{3+}/Mn^{4+}$. Typically, the resistivity of $70.5{\Omega}{\cdot}cm$ and TCR of -3.56%/K at room temperature were obtained for NMCC films deposited from solutions with pH 7.6 for 5 min, and annealed at $450^{\circ}C$ for 3 h.

Exchange bias in NiFe/FeMn/NiFe multilayers

  • Sankaranarayanan, V.K.;Lee, Y.W.;Shalyguina, E.E.;Kim, C.G.;kim, C.O.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.05a
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    • pp.55-58
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    • 2003
  • FeMn based spin valves often consist of a NiFe/FeMn/NiFe trilayer structure. We have investigated the evolution of exchange bias at the bottom and top interfaces in the NiFe(5nm)/FeMn(x)/NiFe(5nm) trilayer structure as a function of FeMn thickness in the range 3 nm to 30 nm. The XRD results indicate (111) textured growth for NiFe and FeMn layers. The magnetization studies using VSM show two hysteresis loops corresponding to the bottom NiFe seed layer and top NiFe layers with greater bias for the bottom NiFe layer, for FeMn thickness equal to and above 5 nm. The larger exchange bias for the bottom seed layer is confirmed by the surface sensitive MOKE hysteresis loop measurements which show gradual weakening of the MOKE hysteresis loop for the bottom NiFe layer with increasing FeMn thickness. The observed large exchange bias in a spin valve structure is usually attributed to the pinning NiFe layer on top of the FeMn layer, even when a NiFe seed layer of a few nm thickness is present, whereas, in reality it may be arising from the bottom seed layer, as shown by the present study.

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