• Title/Summary/Keyword: spin-polarized current

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Electromagnetic Resonant Tunneling System: Double-Magnetic Barriers

  • Kim, Nammee
    • Applied Science and Convergence Technology
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    • v.23 no.3
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    • pp.128-133
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    • 2014

  • We study the ballistic spin transport properties in a two-dimensional electron gas system in the presence of magnetic barriers using a transfer matrix method. We concentrate on the size-effect of the magnetic barriers parallel to a two-dimensional electron gas plane. We calculate the transmission probability of the ballistic spin transport in the magnetic barrier structure while varying the width of the magnetic barriers. It is shown that resonant tunneling oscillation is affected by the width and height of the magnetic barriers sensitively as well as by the inter-spacing of the barriers. We also consider the effect of additional electrostatic modulation on the top of the magnetic barriers, which could enhance the current spin polarization. Because all-semiconductor-based devices are free from the resistance mismatch problem, a resonant tunneling structure using the two-dimensional electron gas system with electric-magnetic modulation would play an important role in future spintronics applications. From the results here, we provide information on the physical parameters of a device to produce well-defined spin-polarized current.

  • https://doi.org/10.5757/ASCT.2014.23.3.128 인용 PDF

Spin injection and transport properties of Co/Au/Y$Ba_2$$Cu_3$$O_y$ tunnel junctions

  • Lee, Kiejin;Kim, Sunmi;Ishibashi, Takauki;Cha, Deokjoon
    • Progress in Superconductivity
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    • v.3 no.1
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    • pp.70-73
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    • 2001

  • We report the spin injection and transport properties of three terminal devices of Co/Au/$YBa_2$$Cu_3$$O_{y}$(F/N/S) tunnel junctions by injection of spin-polarized quaiparticles using a cobalt ferromagnetic injector. The observed current gain depends on the thickness of Au interlayer and is directly related to the nonequilibrium magnetization due to spin relaxation effects. The tunnel characteristic of a F/N/S tunnel junctions exhibited a zero bias conductance peak (ZBCP). The suppression of the ZBCP was observed due to the suppression of Andreev reflection at the interface, which is due to the spin scattering processes at the interface between a ferromagnetic and a d-wave superconductor.r.

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Comparative Measurement of Transverse Nuclear Magnetization of Polarized 129Xe and 131Xe by Spin-exchange Optical Pumping

  • Yu, Ye Jin;Min, Seong Ho;Moon, Han Seb
    • Current Optics and Photonics
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    • v.4 no.6
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    • pp.466-471
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    • 2020

  • We analyze the transverse nuclear magnetizations of 129Xe and 131Xe in a vapor cell containing natural Xe, 87Rb, and buffer gases. Th e Xe atoms are polarized th rough spin-exch ange optical pumping (SEOP) with Rb atoms under low-magnetic-field conditions. From the free-induction-decay (FID) signal, we measure the nuclear magnetization of the Xe atoms in the Xe-Rb vapor cell. Furthermore, we measure the dependence of the gyromagnetic ratio on the magnetization of 129Xe and 131Xe by examining the amplitude of the FID signal of each isotope, and we evaluate the relationship between the magnetic field gradient and transverse relaxation rate for both of the 129Xe and 131Xe isotopes.

  • https://doi.org/10.3807/COPP.2020.4.6.466 인용 PDF KSCI

Using Electron-beam Resists as Ion Milling Mask for Fabrication of Spin Transfer Devices

  • Nguyen Hoang Yen Thi;Yi, Hyun-Jung;Shin, Kyung-Ho
    • Journal of Magnetics
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    • v.12 no.1
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    • pp.12-16
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    • 2007

  • Magnetic excitation and reversal by a spin polarized current via spin transfer have been a central research topic in spintronics due to its application potential. Special techniques are required to fabricate nano-scale magnetic layers in which the effect can be observed and studied. This work discusses the possibility of using electron-beam resists, the nano-scale patterning media, as ion milling mask in a subtractive fabrication method. The possibility is demonstrated by two resists, one positive tone, the ZEP 520A, and one negative tone, the ma-N2403. The advantage and the key points for success of this process will be also addressed.

  • https://doi.org/10.4283/JMAG.2007.12.1.012 인용 PDF KSCI