• 한국벤처창업학회:학술대회논문집
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• 2007.11a
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• pp.111-140
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• 2007

This paper was analyzed to improve internal corporate venture system in public companies. The problems of internal corporate venture systems in a public company were as follows: First, lack of the CEO's willingness in venture business was shown. The culture of venture business also was not mature; Second, the employees were behind the effort to develop their business ability; Third, the objective views are needed to screening venture items and evaluation; Fourth, to measure performance of internal corporate venture, a clear basis and measure system were needed. Fifth, the reward was restricted; Finally, the mother-company did not invest any money for the spin-outed ventures The results of the paper were as follows: First, the CEO's support and effusion of venture culture were needed for successful internal corporate venture system; Second, a public company has to provide education program for venture and information--sharing system; Third, outside consultant may be utilized in finding venture items and feasibility evaluation. Fourth, each venture team may be provided a clear object and specific evaluation system based on characteristic of each team; Fifth, performance-base reward system is needed to enhance motivation; Finally, the public company has to provide find for the spin-off venture by utilizing government system and forming venture capital funds.

• Journal of the Korea Institute of Information Security & Cryptology
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• v.27 no.2
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• pp.281-292
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• 2017

It is demanded to promote research and development of cyber weapons system and core technology in response to the ongoing cyber attack of North Korea. In this paper, core technologies of the future cyber weapon system are developed and the factors affecting the realization timing of core technologies were analyzed. 9 core technology groups and 36 core technologies are derived. Afterwards, these core technology groups are compared to the operation phase of the joint cyber warfare guideline and the cyber kill chain of Lockheed Martin. As a result of the comparison, it is confirmed that the core technology groups cover all phases of the aforementioned tactics. The results of regression analyses performed on the degree of influence by each factor regarding the moment of core technology realization show that the moment of core technology realization approaches more quickly as factors such as technology level of the most advanced country, technology level of South Korea, technology transfer possibility from the military sector to the non-military sector(spin-off factor), and technology transfer possibility from the non-military sector to the military sector(spin-on factor) increase. On the contrary, the moment of core technology realization is delayed as the degree at which the advanced countries keep their core technologies from transferring decrease. The results also confirm that the moment of core technology realization is not significantly correlated to the economic ripple effect factor. This study is meaningful in that it extract core technologies of cyber weapon system in accordance with revision of force development directive and join cyber warfare guideline, which incorporated cyber weapon system into formal weapon system. Furthermore, the study is significant because it indicates the influential factor of the moment of core technology realization.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.348-348
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• 2014

차세대 디스플레이 구동 회로 소자를 위한 재료로서, Amorphous Oxide Semiconductor (AOS)가 주목받고 있다. AOS는 기존의 Amorphous Silicon과 비교하여 뛰어난 이동도를 가지고 있으며, 넓은 밴드 갭에 의한 투명한 광학적 특성을 가지고 있다. 이러한 장점을 이용하여, AOS 박막은 thin film transistor (TFT)의 active channel로 이용 되고 있다. 하지만, AOS를 이용한 TFT의 경우, 시간이 경과함에 따라 $O_2$ 및 $H_2O$ 흡착에 의해 전기적 특성이 변하는 현상이 있다. 이러한 현상은 소자의 신뢰성에 있어 중요한 문제가 된다. 이러한 문제를 연구하기 위해 본 논문에서는, AOS 박막을 이용하여 bottom 게이트형 TFT를 제작하였다. 이를 위해 먼저, p-type Si 위에 건식산화방식으로 $SiO_2$(100 nm)를 성장시켜 게이트 산화막으로 이용하였다. 그리고 Zn과 Sn이 1: 2의 조성비를 가진 ZnSnO (ZTO) 용액을 제조한 후, 게이트 산화막 위에 spin coating 하였다. Splin coating된 용액에 남아 있는 솔벤트를 제거하기 위해 10분 동안 $230^{\circ}C$로 열처리를 한 후, 포토리소그래피와 에칭 공정을 이용하여 ZTO active channel을 형성하였다. 그 후, 박막 내에 남아 있는 불순물을 제거하고 ZTO TFT의 전기적인 특성을 향상시키기 위하여, $600^{\circ}C$의 열처리를 30분 동안 진행 하여 junctionless형 TFT 제작을 완료 하였다. 제작된 소자의 시간 경과에 따른 열화를 확인하기 위하여, 대기 중에서 2시간마다 HP-4156B 장비를 이용하여 전기적인 특성을 확인 하였으며, 이러한 열화는 후처리 공정을 통하여 회복시킬 수 있었다. 열화의 회복을 위한 후처리 공정으로, 퍼니스를 이용한 고온에서의 열처리와 microwave를 이용하여 저온 처리를 이용하였다. 결과적으로, TFT는 소자가 제작된 이후, 시간에 경과함에 따라서 on/off ratio가 감소하여 열화되는 경향을 보여 주었다. 이러한 현상은, TFT 소자의 ZTO back-channel에 대기 중에 있는 $O_2$ 및 $H_2O$의 분자의 물리적인 흡착으로 인한 것으로 보인다. 그리고 추가적인 후처리 공정들에 통해서, 다시 on/off ratio가 회복 되는 현상을 확인 하였다. 이러한 추가적인 후처리 공정은, 열화된 소자에 퍼니스에 의한 고온에서의 장시간 열처리, microwave를 이용한 저온에서 장시간 열처리, 그리고 microwave를 이용한 저온에서의 단 시간 처리를 수행 하였으며, 모든 소자에서 성공적으로 열화 되었던 전기적 특성이 회복됨을 확인 할 수 있었다. 이러한 결과는, 저온임에도 불구하고, microwave를 이용함으로 인하여, 물리적으로 흡착된 $O_2$ 및 $H_2O$가 짧은 시간 안에 ZTO TFT의 back-channel로부터 탈착이 가능함과 동시에 소자의 특성을 회복 가능 함 의미한다.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.200-200
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• 2010

In recent times, metal oxide semiconductors thin films transistor (TFT), such as zinc and indium based oxide TFTs, have attracted considerable attention because of their several advantageous electrical and optical properties. There are many deposition methods for fabrication of ZnO-based materials such as chemical vapor deposition, RF/DC sputtering and pulsed laser deposition. However, these vacuum process require expensive equipment and result in high manufacturing costs. Also, the methods is difficult to fabricate various multicomponent oxide semiconductor. Recently, several groups report solution processed metal oxide TFTs for low cost and non vacuum process. In this study, we have newly developed solution-processed TFTs based on Ti-related multi-component transparent oxide, i. e., InTiO as the active layer. We propose new multicomponent oxide, Titanium indium oxide(TiInO), to fabricate the high performance TFT through the sol-gel method. We investigated the influence of relative compositions of Ti on the electrical properties. Indium nitrate hydrate [$In(NO^3).xH_2O$] and Titanium isobutoxide [$C_{16}H_{36}O_4Ti$] were dissolved in acetylacetone. Then monoethanolamine (MEA) and acetic acid ($CH_3COOH$) were added to the solution. The molar concentration of indium was kept as 0.1 mol concentration and the amount of Ti was varied according to weighting percent (0, 5, 10%). The complex solutions become clear and homogeneous after stirring for 24 hours. Heavily boron (p+) doped Si wafer with 100nm thermally grown $SiO_2$ serve as the gate and gate dielectric of the TFT, respectively. TiInO thin films were deposited using the sol-gel solution by the spin-coating method. After coating, the films annealed in a tube furnace at $500^{\circ}C$ for 1hour under oxygen ambient. The 5% Ti-doped InO TFT had a field-effect mobility $1.15cm^2/V{\cdot}S$, a threshold voltage of 4.73 V, an on/off current ratio grater than $10^7$, and a subthreshold slop of 0.49 V/dec. The 10% Ti-doped InO TFT had a field-effect mobility $1.03\;cm^2/V{\cdot}S$, a threshold voltage of 1.87 V, an on/off current ration grater than $10^7$, and a subthreshold slop of 0.67 V/dec.

• Journal of Microbiology and Biotechnology
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• v.18 no.4
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• pp.676-681
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• 2008

To obtain a natural antioxidant from a marine biomass, this study investigated the antioxidative activity of methanolic extracts from the marine brown alga, Ishige okamurae collected off Jeju Island. A potent free radical scavenging activity was detected in the ethyl acetate fraction containing polyphenolic compounds, and the potent antioxidant elucidated as a kind of phlorotannin, diphlorethohydroxycarmalol, by NMR and mass spectroscopic data. The free radical scavenging activities of the diphlorethohydroxycarmalol were investigated in relation to 1,1-diphenyl-2-picrylhydrazyl (DPPH), alkyl, and hydroxyl radicals using an electron spin resonance (ESR) system. The diphlorethohydroxycarmalol was found to scavenge DPPH ($IC_{50}=3.41{\mu}M$) and alkyl ($IC_{50}=4.92{\mu}M$) radicals more effectively than the commercial antioxidant, ascorbic acid. Therefore, these results present diphlorethohydroxycarmalol as a new phlorotannin with a potent antioxidative activity that could be useful in cosmetics, foods, and pharmaceuticals.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.307.2-307.2
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• 2016

In this study, we synthesized Au nanoparticles (AuNPs) in polyacrylonitrile (PAN) thin films using a simple annealing process in the solid phase. The synthetic conditions were systematically controlled and optimized by varying the concentration of the Au salt solution and the annealing temperature. X-ray photoelectron spectroscopy (XPS) confirmed their chemical state, and transmission electron microscopy (TEM) verified the successful synthesis, size, and density of AuNPs. Au nanoparticles were generated from the thermal decomposition of the Au salt and stabilized during the cyclization of the PAN matrix. For actual device applications, previous synthetic techniques have required the synthesis of AuNPs in a liquid phase and an additional process to form the thin film layer, such as spin-coating, dip-coating, Langmuir-Blodgett, or high vacuum deposition. In contrast, our one-step synthesis could produce gold nanoparticles from the Au salt contained in a solid matrix with an easy heat treatment. The PAN:AuNPs composite was used as the charge trap layer of an organic nano-floating gate memory (ONFGM). The memory devices exhibited a high on/off ratio (over $10^6$), large hysteresis windows (76.7 V), and a stable endurance performance (>3000 cycles), indicating that our stabilized PAN:AuNPs composite film is a potential charge trap medium for next generation organic nano-floating gate memory transistors.

• Asia-Pacific Journal of Business Venturing and Entrepreneurship
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• v.11 no.3
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• pp.27-35
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• 2016

Ministry of Science, ICT and Future Planning have boosted up launching more 'GRI(Government Research Institute) Spin-off High-tech startup' to accelerate the technology commercialization of GRI technologies via the alternative of high-tech startup since 2101. This paper is proposing to found the global platform of accommodating more successful high-tech startup with diagnosing the current policy platform of launching GRI high-tech startup. This paper deliver the outcomes of case study including FGI research over developing the ideas of the experts for the policy line-up of starting from GRI technologies-Hardware Manufacture-BtoB-Global. The research result suggests that the focus of policy should falls not on the quantitative goals, but on more disruptive successful case through utilizing uprising private equity investment in the early stage of business. One of the best policy brought by this research is 'Inbound Globalization Strategy of bringing global early stage investors in Korea for incubation and investment rather than sending out our startup to global without validation by global investor.

• Journal of Information Technology Applications and Management
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• v.27 no.1
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• pp.187-198
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• 2020

With the development of technology and the creation of an entertainment environment for leisure, various marketing strategies are being used in the film industry. Among them, the use of the credit cookie of ending credits was very effective in producing the series. The ending credit is the time it takes to show the names of the people who made the movie, which is meaningless to the audience. There is a cost to produce a ending credit but It wasn't made because no revenue was generated. The credit cookie was inserted into this ending credit area, which brought new pleasure to the audience. Most of them were epilogue images showing the story behind the movie, NG images showing the NG situation during film production, and In videos mentioned in the movie but not shown in the movie itself. As various ideas about credit cookie were connected with marketing, a series movie and a spin-off foretelling the derivative works after the screening work were produced and have a new meaning. As a result, the time of ending credits, which had no commercial value, became the methodology of the most powerful promotional strategy. Looking at the difference between live-action film and animation in producing such credit cookie, unlike live-action films that edit the remaining parts after shooting, the NG video of the animation has a lot of time and money to produce. So, it hasn't try very well, and it seems to have been actively produced when moving from 2D animation to 3D animation. This is because 3D animation, which has already been modeled, can create new NG scenes by simply adding animating based on the layout of the created scene. Since it is possible to produce an episode movie at a low cost and time, and to use the scenes of the movie after the production, it will be necessary to strategically produce credit cookie for promotion in animation.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.180-180
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• 2015

Solution processed Resistive random access memory (ReRAM)은 간단한 공정 과정, 고집적도, 저렴한 가격, 대면적화 플라즈마 데미지 최소화 등의 장점으로 차세대 비휘발성 메모리로 써 많은 관심을 받고 있으며, 주로 high-k 물질인 HfOx, TiOx, ZnO 가 이용 된다. IGZO와 ZTO와 같은 산화물 반도체는 높은 이동도, 대면적화, 넓은 밴드갭으로 인하여 투명한 장점으로 LCDs (Liquid crystal displays)에 이용 가능하며, 최근에는 IGZO와 ZTO에서 Resistive Switching (RS) 특성을 확인한 논문이 보고되면서 IGZO와 ZTO를 ReRAM의 switching medium와 TFT의 active material로써 동시에 활용하는 것에 많은 관심을 받고 있다. 이와 같은 산화물 반도체는 flat panel display 회로에 TFT와 ReRAM의 active layer로써 집적가능 하며 systems-on-panels (SOP)에 적용 가능하다. 하지만 IGZO 보다는 ZTO가 In과 Ga을 포함하지 않기 때문에 저렴하다. 그러므로 IGZO를 대신하는 물질로 ZTO가 각광 받고 있다. 본 실험에서는 ZTO film에 Al을 doping하여 메모리 특성을 평가하였다. 실험 방법으로는 p-type Si에 습식산화를 통하여 SiO2를 300 nm 성장시킨 기판을 사용하였다. 그리고 Electron beam evaporator를 이용하여 Ti를 10 nm, Pt를 100 nm 증착 한다. 용액은 Zn와 Tin의 비율을 1:1로 고정한 후 Al의 비율을 0, 0.1, 0.2의 비율로 용액을 각각 제작하였다. 이 용액을 이용하여 Pt 위에 spin coating방법을 이용하여 1000 rpm 10초, 6000 rpm 30초의 조건으로 AZTO (Al-ZnO-Tin-Oxide) 박막을 증착한 뒤, solvent 및 불순물 제거를 위하여 $250^{\circ}C$의 온도로 30분 동안 열처리를 진행하였다. 이후 Electron beam evaporator를 이용하여 top electrode인 Ti를 100 nm 증착하였다. 제작된 메모리의 전기적 특성은 HP 4156B semiconductor parameter analyzer를 이용하여 측정하였다. 측정 결과, AZTO (0:1:1, 0.1:1:1, 0.2:1:1)를 이용하여 제작한 ReRAM에서 RS특성을 얻었으며 104 s이상의 신뢰성 있는 data retention특성을 확인하였다. 그리고 Al의 비율이 증가할수록 on/off ratio가 증가하고 endurance 특성이 향상되는 것을 확인하였다. 결론적으로 Al을 doping함으로써 ZTO film의 메모리 특성을 향상 시켰으며 AZTO film을 메모리와 트랜지스터의 active layer로써 활용 가능할 것으로 기대된다.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.211.1-211.1
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• 2015

최근 용액 공정을 이용한 산화물 반도체에 대한 연구가 활발히 진행되고 있다. 넓은 밴드갭을 가지고 있는 산화물 반도체는 높은 투과율을 가지고 있어 투명 디스플레이에 적용이 가능하다. 기존의 박막 진공증착 방법은 진공상태를 유지하기 위한 장비의 가격이 비싸며, 대면적의 어려움, 높은 생산단가 등으로 생산율이 높지 않다. 하지만 용액 공정을 이용하면 대기압에서 증착이 가능하고 대면적화가 가능하다. 그리고 각각의 조성비를 조절하는 것이 가능하다. 이러한 장점에도 불구하고, 소자의 신뢰성이나 저온공정은 중요한 이슈이다. Instability는 threshold voltage (Vth)의 shift 및 on/off switching의 신뢰성과 관련된 parameter이다. 용액은 소자의 전기적 특성을 열화 시키는 수분 과 탄소계열의 불순물을 다량 포함 하고 있어 고품질의 박막을 형성하기 위해서는 고온의 열처리가 필요하다. 기존의 열처리는 고온에서 장시간 이루어지기 때문에 유리나 플라스틱, 종이 기판의 소자에서는 불가능하지만 $100^{\circ}C$ 이하의 저온 공정인 microwave를 이용하면 유리, 플라스틱, 종이 기판에서도 적용이 가능하다. 본 연구에서는 산화물 반도체 중에서 InGaZnO (IGZO)를 용액 공정으로 제작한 juctionless thin-film transistor를 제작하여 기존의 열처리를 이용하여 처리한 소자와 microwave를 이용해서 열처리한 소자의 전기적 특성을 한 달 동안 관찰 하였다. 또한 In:Zn의 비율을 고정한 후 Ga의 비율을 달리하여 특성을 비교하였다. 먼저 p-type bulk silicon 위에 SiO2 산화막이 100 nm 증착된 기판에 RCA 클리닝을 진행 하였고, solution InGaZnO 용액을 spin coating 방식으로 증착하였다. Coating 후에, solvent와 수분을 제거하기 위해서 $180^{\circ}C$에서 10분 동안 baking공정을 하였다. 이후 furnace열처리와 microwave열처리를 비교하기 위해 post-deposition-annealing (PDA)으로 furnace N2 분위기에서 $600^{\circ}C$에서 30분, microwave를 1800 W로 2분 동안 각각의 샘플에 진행하였다. 또한, HP 4156B semiconductor parameter analyzer를 이용하여 제작된 TFT의 transfer curve를 측정하였다. 그 결과, microwave 열처리한 소자의 경우 기존의 furnace 열처리 소자와 비교하여 높은 mobility, 낮은 hysteresis 값을 나타내었으며, 1달간 소자의 특성을 관찰하였을 때 microwave 열처리한 소자의 경우 전기적 특성이 거의 변하지 않는 것을 확인하였다. 따라서 향후 용액공정, 저온공정을 요구하는 소자 공정에 있어 열처리방법으로 microwave를 이용한 활용이 기대된다.