• Korean Chemical Engineering Research
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• v.53 no.6
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• pp.762-769
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• 2015

The titania ($TiO_2$) nanoparticles with a diameter 2?3 nm were synthesized by controlling hydrolysis of titanium tetraisopropoxide (TTIP) in acid solution. Organic-inorganic hybrid coating solutions were prepared by reacting the titania nanoparticles with 3-glycidoxypropyl trimethoxysilane (GPTMS) by the sol-gel method. The hard coating films with high refractive index were obtained by curing thermally at $120^{\circ}C$ after spin-coating the coating solutions on the polycarbonate (PC) sheets. The coating films showed high optical transparency of 90% in the visible range and exhibited a pencil hardness of 2H. Also, the refractive index at 633 nm wavelength of coating films enhanced from 1.502 to 1.584 as the weight content of titania nanoparticles in the coating solutions increased from 4% to 25%.

• Korean Chemical Engineering Research
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• v.52 no.3
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• pp.388-394
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• 2014

Inorganic-organic hybrid coating solutions were synthesized using titania sol from titanium isopropoxide (TTIP) as an inorganic component and mixture of two or three types of silane coupling agents, such as methacryloxypropyl trimethoxysilane (MPTMS), aminopropyl triethoxysilane (APS), glycidoxypropyl trimethoxysilane (GPTMS) and vinyltriethoxysilane (VTES) as an organic component. The hard coating films were obtained by spin-coating on the polycarbonate sheets and curing the inorganic-organic hybrid coating solutions. The coating films made from the mixture of two types of silane coupling agents showed poor pencil hardness and adhesion, while those from the mixture of three types of silane coupling agents exhibited an improved pencil hardness of 2H~4H and adhesion of 5B. The refractive indexes of coating films were increased from 1.56 to 1.63 at 550 nm by increasing the content of titania sols from 20 to 30 g.

• Korean Chemical Engineering Research
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• v.55 no.6
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• pp.830-836
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• 2017

Hydrophilic coating solutions were prepared by reacting a silane coupling agent, GPTMS (3-glycidoxypropyl trimethoxysilane) with colloidal silica. Hydrophilic coating films were also obtained by depositing the hydrophilic coating solutions on polycarbonate substrates by spin-coating and subsequently by thermal curing at $120^{\circ}C$. During this process, the effect of average particle sizes of colloidal silica was studied on the properties of coating films. As a result, coating film, prepared from colloidal silica with average particle size of 25 nm, showed a low contact angle of $20^{\circ}$ and a good pencil hardness of H. On the other hand, coating films, prepared from colloidal silica with average particle sizes of 15 nm and 45 nm, exhibited high contact angles of $27^{\circ}$ and $36^{\circ}$ and pencil hardness of H and B, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.388-388
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• 2010

In this study, Ferroelectric vinylidene fluoride-trifluoroethylene (VF2-TrFE) copolymer films were directly deposited on degenerated Si (n+, $0.002\;{\Omega}{\cdot}cm$) using by spin coating method. A 1~5 wt% diluted solution of purified vinylidene fluoride-trifluoroethylene (VF2:TrFE = 70:30) in a dimethylformamide (DMF) solvent were prepared and deposited on silicon wafers at a spin rate of 2000 ~ 4000 rpm for 2 ~ 30 seconds. After annealing in a vacuum ambient at 100 ~ $200^{\circ}C$ for 60 min, upper aluminum electrodes were deposited by vacuum evaporation for electrical measurement. X-ray diffraction results showed that the VF2-TrFE films on Si substrates had $\beta$-phase of copolymer structures. The capacitance on highly doped Si wafer showed hysteresis behavior like a butterfly shape and this result indicates clearly that the copolymer films have ferroelectric properties. The typical measured remnant polarization ($P_r$) and coercive filed ($E_c$) values were about $5.7\;{\mu}C/cm^2$ and 710 kV/em, respectively, in an applied electric field of ${\pm}$ 1.5 MV/em. The gate leakage current densities measured at room temperature was less than $7{\times}10^{-7}\; A/cm^2$ under a field of 1 MV/cm.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1719-1721
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• 1996

This paper describes the thermally stimulated current(TSC) of PAAS spin coated film and the electrical properties of pre TSC measurement and after TSC test specimens. The TSC measurement were performed from room temperature to about $280^{\circ}C$ and the temperature was increased by $5^{\circ}C/min$ automatically. It shows that two peaks of TSC are observed at about $50^{\circ}C$ and about $160^{\circ}C$. Result of this measurement indicate that one peak; $50^{\circ}C$ is from alkyl group; other peak at $160^{\circ}C$ is due to alkyl and C-O group of PAAS. Addition to larger peak at about $160^{\circ}C$ is due to dipolemoment of PAAS film. This result is proved by DSC measurement of PAAS film. The electrical properties of pre and after TSC were measured by currant-voltage(l-V) characteristics. The current-voltage characteristics after TSC specimens are increased the conductivity. The electrical properties of pre-after TSC measurement specimen is in the middle of imidization of PAAS. Because of this result a thermal imidization was performed at $300^{\circ}C$ for 1 hour.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.134-134
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• 2012

We investigated the interface of poly (3-hexylthiophene) (P3HT) and C61-butyric acid methylester (PCBM) by using photoelectron spectroscopy (PES). These are the most widely used materials for bulk heterojunction (BHJ) organic solar cells due to their high efficiency. Study of the BHJ interfaces is difficult because the organic films are typically prepared by spin coating in ambient conditions. This is incompatible with the interface electronic structure probes such as PES, which requires ultrahigh vacuum conditions. Study of interface requires gradual deposition of thin films that is also incompatible with the spin coating process. In this work, we used electrospray vacuum deposition (EVD) technique to deposit P3HT and PCBM in high vacuum conditions. EVD allows us to form polymer thin films onto ITO substrate in a step-wise manner directly from solutions and to use PES without exposing the sample to the ambient condition. Although the morphology of the EVD deposited P3HT films observed by optical and atomic force microscopes is quite different from that of the spin coated ones, the valence region spectra were similar. PCBM was deposited on the P3HT film in a similar manner and the energy level alignment between these two materials was studied. We discuss the relation between Voc of P3HT:PCBM solar cell and HOMO-LUMO energy offset obtained in this study.

• Electrical & Electronic Materials
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• v.9 no.10
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• pp.991-1000
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• 1996

PbTiO$_{3}$-PbZrO$_{3}$-Pb(Ni$_{1}$3/Nb$_{2}$3/O$_{3}$) (PZT-PNN) thin films were prepared from corresponding metal organics partially stabilized with diethanolamine by the sol-gel spin coating method. Each mol ratio of PT:PZ:PNN solutions were #1(50:40:10), #2(50:30:20), #3(45:35:20), #4(40:40:20), #5(40:50:10), #6(35:45:20) and #7(30:50:20) respectively. The spin-coated PZT-PNN films were heat-treated at 350.deg. C for decomposition of residual organics, and were sintered from 450.deg. C to 750.deg. C for crystallization. The substrates, such as Pt and Pt/TiN/Ti/TiN/Si were used for the spin coating of PZT PNN films. The perovskite phase was observed in the PZT-PNN films heat-treated at 500.deg. C. The crystalline of the PZT-PNN films was optimized at the sintering of 700.deg. C. By the result of AES analysis, It is confirmed that the films of TiN/Ti/TiN was a good diffusion barrier and that co-diffusion into the each films was not observed.

• Journal of Adhesion and Interface
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• v.23 no.4
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• pp.116-121
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• 2022

OFET have require fine patterning technology for organic semiconductor solution process to be used in actual electronics. In this study, we compared and analyzed the soft lithography method which can form fine patterns more than the conventional spin coating method in order to confirm that it can have better electrical characteristics. The soft lithography method produced a flexible master mold using nano patterns on compact disc surfaces and obtained a 650 nm wide 2,7-Dioctyl [1] benzothieno [3,2-b] [1] benzo thiophene (C_8-BTBT) nanowires. As a result, the field-effect mobility of devices fabricated by the spin coating method was 0.0036 cm²/Vs and mobility of devices produced by soft lithography method was 0.086 cm²/Vs, which was about 20 times higher than spin-coated devices and has better electrical performance.

• Korean Journal of Materials Research
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• v.21 no.4
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• pp.236-241
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• 2011

Polysilazane and silazane-based precursor films were deposited on stacked TiN/Ti/TEOS/Si-substrate by spin-coating, then annealed at $150{\sim}400^{\circ}C$, integrated further to form the top electrode and pad, and finally characterized. The precursor solutions were composed of 20% perhydro-polysilazane ($SiH_2NH$)n, and 20% hydropolymethyl silazane ($SiHCH_3NH$)n in dibutyl ether. Annealing of the precursor films led to the compositional change of the two chemicals into silicon (di)oxides, which was confirmed by Fourier transform infrared spectroscopy (FTIR) spectra. It is thought that the different results that were obtained originated from the fact that the two precursors, despite having the same synthetic route and annealing conditions, had different chemical properties. Electrical measurement indicated that under 0.6MV/cm, a larger capacitance of $2.776{\times}10^{-11}$ F and a lower leakage current of 0.4 pA were obtained from the polysilazane-based dielectric films, as compared to $9.457{\times}10^{-12}$ F and 2.4 pA from the silazane-based film, thus producing a higher dielectric constant of 5.48 compared to 3.96. FTIR indicated that these superior electrical properties are directly correlated to the amount of Si-O bonds and the improved chemical bonding structures of the spin-on dielectric films, which were derived from a precursor without C. The chemical properties of the precursor films affected both the formation and the electrical properties of the spin-on dielectric film.

• Journal of the Korean Vacuum Society
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• v.20 no.3
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• pp.182-188
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• 2011

Polysilazane and polymethylsilazane based precursor films were deposited on Si-substrate by spin-coating, subsequently annealed at $150{\sim}850^{\circ}C$, and characterized. Structural analysis, shrink, compositional change, etch rate, and gap-filling were observed. Annealing the precursor films led to formation of spin-on dielectric films. C-containing precursor films showed that less loss of N, H, and C while less gain of O than that of C-free precursor films at $400^{\circ}C$, but more loss of N, H, and C while more gain of O at $850^{\circ}C$. Thus polysilazane based precursor films exhibited less reduction in thickness of 14.5% than silazane based one of 15.6% at $400^{\circ}C$ but more 37.4% than 19.4% at $850^{\circ}C$. FTIR indicated that C induced smaller amount of Si-O bond, non-uniform property, and lower resistance to chemical etching.