• Journal of radiological science and technology
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• v.37 no.4
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• pp.253-259
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• 2014

Large volume of $6{\times}6{\times}12mm^3$ CdZnTe ${\gamma}$-ray detector was fabricated with CdZnTe single crystals grown by Traveling Heater Method (THM) to evaluate the energy resolution of 662 keV in $^{137}Cs$. Hole tailing effect which originated from the large mobility difference in electron and hole degrade energy resolution of radiation detector and its effects become more severe for a large volume detectors. Generally, single carrier collection technique is very useful method to remove/minimize hole tailing effect and thereby improvement in energy resolution. Virtual Frisch-grid technique is also one of single charge collection method through weighting potential engineering and it is very simple and easily applicable one. In this paper, we characterized CZT detector grown by THM and evaluated the effectiveness of virtual Frisch-grid technique for a high energy gamma-ray detector. The proper position and width of virtual Frisch-grid was determined from electric field simulation using ANSYS Maxwell ver. 14.0. Energy resolution of 2.2% was achieved for the 662 keV ${\gamma}$-peak of $^{137}Cs$ with virtual Frisch-grid CdZnTe detector.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.125-128
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• 1998

Electroluminescent(EL) devices based on organic thin films have attracted lots of interests in large-area light-emitting display. One of the problems of such device is a lifetime, where a degradation of the cell is possibly due to an organic layer's thickness, morphology and interface with electrode. In this study, light-emitting organic electroluminescent devices were fabricated using Alq$_3$(8-hydroxyquinolinate aluminum) and TPD(N,N'-diphenyl-N,N'-bis(3-methylphenyl)-[1-1'-biphenyl]-4,4'-diamine).Where Alq$_3$ is an electron-transport and emissive layer, TPD is a hole-transport layer. The cell structure is ITO/TPD/Alq$_3$/Al and the cell is fabricated by vacuum evaporation method. In a measurement of current-voltage characteristics, we obtained a turn-on voltage at about 9 V. And we used other buffer layer of PPy(Polypyrrole) with ITO/PPy/TPD/Alq$_3$/Al structure. We observed a surface morphology by AFM(Atomic Force Microscopy), UV/visible absorption spectrum, and PL(Photoluminescence) spectrum. We obtained the UV/visible absorption peak at 358nm in TPD and at 359nm in Alq$_3$, and at 225nm and the PL peaks at 410nm in TPD and at 510nm in Alq$_3$ and at 350nm. We also studied EL spectrum in the cell structure of ITO/TPD/Alq$_3$/Al and ITO/PPy/TPD/Alq$_3$/Al and we observed the EL spectrum peak at 510nm from our cell

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.229.2-229.2
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• 2016

본 연구에서는 Host와 Dopant $Ir(ppy)_3$의 도핑 위치 변화에 따른 bottom emission 인광 OLED를 제작하여 발광 효율 및 특성을 분석하였다. 소자의 EML은 $Ir(ppy)_3/CBP$와 $CBP/Ir(ppy)_3$ 순으로 증착하여 제작하였다. $Ir(ppy)_3/CBP$은 낮은 구동 전압에서 큰 전류밀도와 큰 luminance을 측정하였고, 반대로 $CBP/Ir(ppy)_3$은 높은 구동 전압에서 $CBP/Ir(ppy)_3$은 큰 전류밀도와 큰 luminance가 측정되었다. 이는 $Ir(ppy)_3/CBP$에서 HTL과 EML 사이에 hole direct injection이 발생으로 Hole이 증가하지만 charge balance 불일치로 roll-off가 발생하고, $CBP/Ir(ppy)_3$에서 electron direct injection에 의한 electron 증가로 charge balance가 향상된다. EL spectrum 측정에서 $Ir(ppy)_3$은 파장 512nm 발광이 일어나고, CBP와 NPB은 각각 파장 380nm, 433nm로 분석된다. 각 물질의 triplet의 전달은 energy level이 큰 곳에서 작은 곳으로 전달되는데 이러한 이유로 전압에 따른 recombination zone 변화로 각 물질에서 나오는 파장의 intensity가 달라지는 것을 확인하였다. $Ir(ppy)_3/CBP$은 낮은 전류 밀도에서는 CBP의 영향으로 380nm 파장대가 크고, 높은 전류 밀도에서는 $Ir(ppy)_3$의 영향으로 512nm 파장대가 크게 나오는 것을 확인했고, $CBP/Ir(ppy)_3$에서는 낮은 전류 밀도에서 512nm 파장대가 커지고, 큰 전류 밀도에서는 CBP에서 NPB로의 triplet 에너지 전달의 증가로 433nm 파장대가 커지는 것을 확인하였다.

• The Bulletin of The Korean Astronomical Society
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• v.39 no.2
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• pp.71.1-71.1
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• 2014

The black hole occupation fraction in dwarf galaxies can provide an important clue for understanding the black hole seed formation. As a pilot feasibility study, we performed a KVN radio monitoring campaign over 8 months for 4 dwarf galaxies. Two galaxies (IC10 and NGC1569) are detected at 22 GHz, respectively with 39 mJy, 83 mJy. The measured flux (rms) variability is 13% and 8%, respectively for IC10 and NGC1569, while the mean flux uncertainty is 25% and 12%. Thus, the detection of the radio flux variability is at best marginal. Detecting flux variability of faint sources (i.e., 22 GHz flux < 200 mJy) seems challenging with the KVN single dishes. Combining with the 1.4 GHz flux measurements from the NVSS, we find that these two galaxies have a steep spectrum, supporting that the radio sources are AGNs. Instead of a monitoring, single-epoch multi-band observations can be effective for identifying radio AGNs by providing the constraint of the radio continuum slope.

• The Bulletin of The Korean Astronomical Society
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• v.35 no.1
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• pp.80-80
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• 2010

About 50% of Active Galactic Nuclei(AGNs) are found to be red and dust-obscured. They are believed to be in an early dusty stage of AGNs evolution or affected by dust torus in the direction of line of sight. However, optical spectrum is affected by dust extinction, making it difficult to study their properties, such as FWHM and luminosity. In order to reveal the mass of central Black Hole(BH) in red AGN, we establish a new BH mass estimator for typical type1 AGNs using Near InfraRed(NIR) hydrogen line($P_{\alpha}$ and $P_{\beta}$), since these lines are at longer wavelength, less affected by dust extinction than optical hydrogen lines, such as $H_{\alpha}$ and $H_{\alpha}$. To derive the new empirical formula, we use a sample of well-known 36 AGN with a wide BH mass range of $10^6-10^9\;M_{\odot}$, where $M_{BH}s$ are estimated by reverberation mapping method and single epoch method. The $P_{\alpha}/P_{\beta}$ luminosities and FWHMs are derived by analyzing IRTF NIR spectra or taken from literature values. We show that luminosities and FWHMs of these lines correlate well with those of Balmer lines. Suggesting that Paschen and Balmer broad lines are originated from same region. Finally, we present the new $M_{BH}$ formula that are based on $P_{\alpha}/P_{\beta}$ luminosity and FWHM. We hope that our result will be used for investigating red AGNs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.9
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• pp.781-785
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• 2009

We have fabricated simple triple-layer blue-emitting phosphorescent organic light emitting diodes (OLEDs) using different thicknesses (25 and 55 nm) of 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) electron transport layers. 1,1-bis[4-bis (4-methylphenyl)- aminophenyllcyclohexane (TAPC), bis[(4,6-di-fluorophenyl)-pyridinate-$N,C^{2'}$]picolinate (FIrpic) and N,N' -dicarbazolyl-3,5-benzene (mCP) were used as hole transport, blue guest and host materials, respectively. The driving voltage, electroluminescence (EL) efficiency and emission characteristics of devices were investigated. The maximum EL efficiency was 20 cd/A in the device with 55 nm BCP layer, which efficiency was about 33% higher than the device with 25 nm BCP layer. The higher efficiency in the 55 nm BCP device resulted from the enhanced electron-hole balance. In the EL spectrum of blue phosphorescent OLED with BCP layer, the relative intensity between 470 and 500 nm peaks was related to the location of emission zone.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.10
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• pp.871-877
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• 1998

Electroluminescent(EL) devices based on organic materials have been of great interest due to their possible applications for large-area flat-panel displays, where they are attractive because of their capability of multicolor emission, and low operation voltage. In this study, glass substrate/ITO/Eu(TTA)$_3$(phen)/Al, glass substrate/ITO/Eu(TTA)$_3$(phen)/Al and glass substrate/ITO/Eu(TTA)$_3$(phen)/AlQ$_3$/Al structures were fabricated by vacuum evaporation method, where aromatic diamine(TPD) was used as a hole transporting material, Eu(TTA)$_3$(phen) as an emitting material, and Tris(8-hydroxyquinoline) aluminu-m(AlQ$_3$) as an electron transporting layer. Electrolumescent(EL) and I-V characteristics of Eu(TTA)$_3$-(-phen) were investigated. These structures show the red EL spectra, which are almost the same at the PL spectrum of Eu(TTA)$_3$(phen). I-V characteristics of this structure show that turn-on voltage was 9V and current density was 0.01A/㎤ at a operation voltage of 9V. Electrical transporting phenomena of these structures were explained using the trapped-charge-limited current model with I-V characteristics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.60-62
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• 2004

CdTe nanoparticles were synthesized in aqueous solution by colloidal method. The absorption and photoluminescence(PL) spectrum of the synthesized CdTe nanoparticles revealed the strong exitonic peak in the visible region. Electroluminescence of CdTe nanoparticles were observed in the structure of Al/CdTe/PVK/ITO and Al/CdTe/PEDOT/ITO that were fabricated by spin coating of polyvinylcarvazole(PVK), poly(3,4-ethylenedioxythiophene(PEDOT) and CdTe nanoparticles. The turn-on voltages of Al/CdTe/PVK/ITO and Al/CdTe/PEDOT/ITO for electroluminescence were 5V and 6V, respectively. We identified that the reduction of turn-on voltage resulted from the increase of hole injection into the hole transport layer due to lower ionization energy of PEDOT.

• Journal of the Semiconductor & Display Technology
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• v.22 no.1
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• pp.94-98
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• 2023

In the case of high-speed data transmission on high multilayer boards, signal coherence is a problem, especially due to the via hole, and a solution to improve return loss or insertion loss by applying a back drill to the via hole is being proposed. In this paper, Near-Field Electromagnetic measurements were made on a high multilayer board to determine how the presence or absence of back drill affects signal consistency. For this purpose, we used a signal generator, spectrum analyzer, and EMC scanner on a test board to determine if it is possible to distinguish between areas with and without back drill in the via holes of the stubs on the board. Also, we analyzed the measured value of S11, S21 and EMC etc. for how much it improves the signal attenuation of the stub with back drill. Through this, we knew that less electromagnetic waves are generated the stub via with back drill. At future research, we will analyze how much it improves the signal loss and electromagnetic waves due to the depth of back drill.

• The Bulletin of The Korean Astronomical Society
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• v.42 no.2
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• pp.44.3-45
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• 2017

To date, luminous quasars at z ~ 6 have been found to be in maximal accretion with the Eddington ratios, ${\lambda}Edd$ ~ 1, suggesting enhanced nuclear activities in the early universe. However, this may not be the whole picture of supermassive black hole (SMBH) growth since previous studies have not reached on faint quasars that are more likely to harbor SMBHs with low ${\lambda}Edd$. To understand the accretion activities in quasars at high redshift, we obtained the deep near-infrared (NIR) spectrum of a quasar, IMS J2204+0112, one of the few faintest quasars that have been identified at z ~ 6. From the NIR spectrum, we find that IMS J2204+0112 harbors a SMBH with about a billion solar mass, with ${\log}({\lambda}Edd)=-0.91$. This is the lowest accretion rate found so far for quasars at z ~ 6, but a common value among quasars at z ~ 2. The inclusion of this object in the ${\lambda}Edd$ analysis gives the intrinsic ${\lambda}Edd$ distribution of z ~ 6 quasars, which is lower than previous results that are based on bright quasars, but it is still higher than ${\lambda}Edd$ of z ~ 2 quasars. Although the number statistics needs to be improved in future, the low peak ${\lambda}Edd$ value is consistent with the SMBH growth from a massive black hole seed (~ 105 Msun) or from a stellar mass black hole through short-duration super-Eddington accretion events (${\lambda}Edd$ > 10).