• 제목/요약/키워드: spectrum hole

검색결과 147건 처리시간 0.027초

인지무선 네트워크에서의 채널예측기반 MAC 프로토콜 (Channel Prediction based MAC Protocol in Cognitive Radio Networks.)

  • 축문민;박형근
    • 전기학회논문지
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    • 제59권10호
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    • pp.1914-1916
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    • 2010
  • Cognitive radio MAC protocol should allow secondary users to access unused or under-utilized spectrum without interference to primary users. For cognitive MAC protocol, one of the important issues is how to select the channel opportunities for secondary users. In this paper, we propose a novel cognitive MAC protocol to allocate channel opportunities for the secondary users based on the prediction of future availability. The proposed MAC protocol can reduce the interference to primary users and increase throughput using multiple channels.

Thermal Properties of Graphene

  • Yoon, Du-Hee;Lee, Jae-Ung;Son, Young-Woo;Cheong, Hyeon-Sik
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제40회 동계학술대회 초록집
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    • pp.14-14
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    • 2011
  • Graphene is known to possess excellent thermal properties, including high thermal conductivity, that make it a prime candidate material for heat management in ultra large scale integrated circuits. For device applications, the key parameters are the thermal expansion coefficient and the thermal conductivity. There has been no reliable experimental determination on the thermal expansion coefficient of graphene whereas the estimates of the thermal conductivity vary widely. In this work, we estimate the thermal expansion coefficient of graphene on silicon dioxide by measuring the temperature dependence of the Raman spectrum. The shift of the Raman peaks due to heating or cooling results from both the intrinsic temperature dependence of the Raman spectrum of graphene and the strain on the graphene film due to the thermal expansion mismatch with silicon dioxide. By carefully comparing the experimental data against theoretical calculations, it is possible to determine the thermal expansion coefficient. The thermal conductivity is measured by estimating the thermal profile of a graphene film suspended over a circular hole of the substrate.

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컴퓨터 시각에 의한 사과 결점 검출 (Detection of Apple Defects Using Machine Vision)

  • 서상룡;성제훈
    • Journal of Biosystems Engineering
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    • 제22권2호
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    • pp.217-226
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    • 1997
  • This study was to develop a machine vision system to detect and to discriminate 5 kinds of apple surface defectbruise, decay. fleck, worm hole and scar. To detect the defects from an image of apple, thresholding technique was applied to images on various frames (R, G, B, H, S and I) of the color machine vision and an image of near infrared (NIR). To discriminate the detected region of defect, various features of the 5 kind defect regions were extracted from the 4 kinds of images selected above. The features were size of area, roundness, axes length ratio, mean and valiance of pixel values, standard deviation of real part of amplitude spectrum in frequency domain obtained by Fourier transform of pixel data and mean and standard deviation of power spectrum obtained by the same transform of pixel data. Routines to discriminate the defects from the features of image were developed and tested to prove their validity. The test resulted that I-frame and NIR images were the most desirable. Accuracies of the two images to discriminate the defects were noted as 76% and 77%, respectively.

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Electroluminescent Devices Using a Polymer of Regulated Conjugation Length and a Polymer Blend

  • Zyung, Tae-Hyoung;Jung, Sang-Don
    • ETRI Journal
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    • 제18권3호
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    • pp.181-193
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    • 1996
  • A blue light emitting device has been successfully fabricated using a polymer with regulated conjugation length containing trimethylsilyl substituted phenylenevinylene units. Electroluminescence from the device has an emission maximum at 470 nm. The device shows typical diode characteristics with operating voltage of 20 V and the light becomes visible at a current density of less than $0.5;mA/cm^2$. The electroluminescence spectrum is virtually identical with the photoluminescence spectrum, indicating that the radiation mechanisms are the same for both. A light emitting device using the blend of a large band gap polymer and a small band gap polymer was also fabricated. Light emission from the small band gap polymer shows much improved quantum efficiency, but there is no light emission from the large band gap polymer. Quantum efficiency of the blend increases up to about two orders of magnitude greater than that of the small band gap polymer with increasing proportion of the large band gap polymer. The improvement in quantum efficiency is interpreted in terms of exciton transfer and the hole blocking behaviour of the large band gap polymer. Finally, we have fabricated a patterned flexible light emitting device using the high quantum efficiency polymer blend system.

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Effects of Black Hole Mass Spectrum in Dynamics of Globular Clusters

  • Park, Dawoo;Kim, Chunglee;Lee, Hyung Mok;Bae, Yeong-Bok
    • 천문학회보
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    • 제39권1호
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    • pp.80-80
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    • 2014
  • Dynamics of a globular cluster (GC) is dominated by behaviors of high-mass components such as neutron stars or black holes (BHs). Massive components in a cluster are segregated into the cluster core and some of them are ejected by dynamical interactions. In this study, we perform N-body simulations of GCs adapting two BH mass components, $10M_{\odot}$ and $20M_{\odot}$. Previous studies which mostly assume single-mass BHs suggested a rapid collapsing and escaping of BHs. A cluster with a two-component BH mass spectrum, however, retains a large fraction of $10M_{\odot}$ BHs longer. In addition to their roles in cluster dynamics, massive components in binaries are one of important sources of gravitational waves (GWs). We investigate properties of BH binaries escaped from the cluster and discuss their implications for GW detection.

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The Rheological and Mechanical Model for Relaxation Spectra of Polydisperse Polymers

  • Kim, Nam Jeong;Kim, Eung Ryul;Hahn Sang Joon
    • Bulletin of the Korean Chemical Society
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    • 제13권4호
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    • pp.413-419
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    • 1992
  • The theoretical equation for the relaxation spectrum of nonlinear viscoelastic polymeric material was derived from the Ree-Eyring and Maxwell non-Newtonian model. This model consists of infinite number of hyperbolic sine law Maxwell elements coupled in parallel plus a spring without a dashpot. Infinite number of nonlinear viscoelastic Maxwell elements can be used by specifying distribution of relaxation times, hole volumes, molecular weights, crystallite size and conformational size, etc. The experimentals of stress relaxation were carried out using the tensile tester with the solvent chamber. The relaxation spectra of nylon 6 filament fibers in various electrolytic solutions were obtained by applying the experimental stress relaxation curves to the theoretical equation of relaxation spectrum. The determination of relaxation spectra was performed from computer calculation.

다공 초음속 분류소음에 관한 실험적 연구 (An Experimental Study on the Supersonic Jet Noise from Multihole)

  • 권영필;서기원
    • 설비공학논문집
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    • 제4권2호
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    • pp.96-105
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    • 1992
  • The objective of this paper is to study experimentally on the noise characteristics of supersonic jet from multihole orifice in the range of jet pressure from $at_g$ to $at_g$ in the reverberation room. At first, the single orifice jets are investigated for various hole diameter from 3.8mm to 10mm. Through the noise spectrum, the turbulent mixing noise and the shock associated noise is analyzed. The noise for confined jets into a tube of diameter 30mm or 90mm with length 2m is investigated in comparision with that for the free jets. The sound power level is measured and compared with thoretical models for free jet. At second, multihole orifice jets are investigated to study the effect of multijet on noise reduction. The spectrum and power level of multijets are measured and compared with single jets. The multi-jets in a confined pipe are also investigated. It is found that the noise spectrum is significantly altered by increasing the number of jet with decrease in jet diameter and also by confining the jet into tube.

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QD-LED용 무기계 홀전도층 NiO 박막 증착 연구 (Depositon of NiO films for Inorganic Hole-transporting Layer in QD-LED)

  • 정국채;오승균;김영국;최철진
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 하계학술대회 논문집
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    • pp.330-330
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    • 2009
  • For the high-performance Quantum dots-Light Emitting Diodes in the near-infrared and visible spectrum, adequate electro- and hole-transporting layers are required. The operation lifetimes of typical materials used in OLEDs are very limited and degraded especially by the oxygen and humid atmosphere. In this work, NiO was selected as a possible hole-transporting layer replacing the TPD film used in QD-LEDs. About 40-nm-thick NiO films have been deposited by the rf-sputtering method on various technical substrates such as FTO/glass, ITO/glass, and ITO/PEN. For the balance of charge carriers and quenching consideration, the resistivity of the deposited NiO films was investigated controlling the oxygen in the sputtering gas. NiO films were fabricated at room temperature and about 6mTorr using pure Ar, 2.5%-, 5%-, and 10%-mixed $O_2$ in Ar respectively. We also investigated the rf-power dependence on NiO films in the range of 80 ~ 200 Watts. The resistivity of the samples was varied from highly conductive to resistive state. Also discussed are the surface roughness of NiO films to provide the smooth surface for the deposition of QDs.

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Layer Thickness-dependent Electrical and Optical Properties of Bottom- and Top-emission Organic Light-emitting Diodes

  • An, Hui-Chul;Na, Su-Hwan;Joo, Hyun-Woo;Kim, Tae-Wan
    • Transactions on Electrical and Electronic Materials
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    • 제10권1호
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    • pp.28-30
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    • 2009
  • We have studied organic layer-thickness dependent electrical and optical properties of bottom- and top-emission devices. Bottom-emission device was made in a structure of ITO(170 nm)/TPD(x nm)/$Alq_3$(y nm)/LiF(0.5 nm)/Al(100 nm), and a top-emission device in a structure of glass/Al(100 nm)/TPD(x nm)/$Alq_3$(y nm)/LiF(0.5 nm)/Al(25 nm). A hole-transport layer of TPD (N,N'-diphenyl-N,N'-di(m-tolyl)-benzidine) was thermally deposited in a range of 35 nm and 65 nm, and an emissive layer of $Alq_3$ (tris-(8-hydroxyquinoline) aluminum) was successively deposited in a range of 50 nm and 100 nm. Thickness ratio between the hole-transport layer and the emissive layer was maintained to be 2:3, and a whole layer thickness was made to be in a range of 85 and 165 nm. From the current density-luminance-voltage characteristics of the bottom-emission devices, a proper thickness of the organic layer (55 nm thick TPD and 85 nm thick $Alq_3$ layer) was able to be determined. From the view-angle dependent emission spectrum of the bottom-emission device, the peak wavelength of the spectrum does not shift as the view angle increases. However, for the top-emission device, there is a blue shift in peak wavelength as the view angle increases when the total layer thickness is thicker than 140 nm. This blue shift is thought to be due to a microcavity effect in organic light-emitting diodes.

전자-정공 효과(Core-Hole Effect) 적용에 따른 SiO2 고압상들의 전자구조 및 O K-edge X-선 Raman 산란 스펙트럼 계산 결과 분석 (Core-hole Effect on Partial Electronic Density of State and O K-edge x-ray Raman Scattering Spectra of High-Pressure SiO2 Phases)

  • 김훈;이유수;이성근
    • 한국광물학회지
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    • 제30권2호
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    • pp.59-70
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    • 2017
  • $SiO_2$는 지각과 맨틀을 구성하는 풍부한 물질로 고압 상태의 $SiO_2$ 원자구조를 결정짓는 전자구조적 특성에 대한 상세한 이해는 지구 내부의 탄성과 열역학적 성질에 대한 통찰을 제공한다. $SiO_2$처럼 경원소(low-z)로 이루어진 지구 물질의 고압상 전자구조는 in situ 고압 XRS (x-ray Raman scattering) 실험을 통해 연구되어 왔다. 하지만 기존의 고압 실험 방법으로는 물질의 국소 원자구조와 XRS 스펙트럼 간 상관관계를 밝히는데 한계가 있다. 이를 극복하고 더 높은 압력에서 존재하는 $SiO_2$에 대한 XRS 정보를 얻기 위해 밀도 범함수 이론(density functional theory; DFT)에 기반을 둔 제1원리(ab initio) 계산법을 이용한 XRS 스펙트럼 계산 연구들이 진행되고 있다. 비탄성 X-선 산란에 의하여 원자핵 주변 1s 오비탈에 만들어지는 전자-정공(core-hole)은 경원소 물질의 국소 전자구조에 크게 영향을 미치기 때문에 O K-edge XRS 스펙트럼 형태를 계산할 때 중요하게 고려해야 한다. 본 연구에서는 온-퍼텐셜 선형보충파(full-potential linearized augmented plane wave; FP-LAPW) 방법론에 기반하는 WIEN2k 프로그램을 사용하여 ${\alpha}-quartz$, ${\alpha}-cristobalite$ 그리고 $CaCl_2$-구조를 갖는 $SiO_2$에 대한 O 원자 전자 오비탈의 부분 상태밀도(partial density of states; PDOS)와 O K-edge XRS 스펙트럼을 계산하였다. 또한, $CaCl_2$-구조를 갖는 $SiO_2$의 O 원자 PDOS의 전자-정공 효과의 적용 여부에 따른 차이를 비교하여, 원자핵 부근 전자구조 변화에 따른 PDOS의 피크 세기와 위치 변화가 크게 나타났다는 사실을 확인할 수 있었다. 또한 계산된 각 $SiO_2$ 구조의 O K-edge XRS 스펙트럼이 각 $SiO_2$ 구조에서 계산된 O 원자의 $p^*$ 오비탈의 PDOS 결과와 매우 유사한 형태를 갖고 있음을 확인하였다. 이는 O K-edge XRS 스펙트럼이 갖는 대부분의 특징적인 피크들이 O 원자의 점유 1s 오비탈에서 $2p^*$ 오비탈로의 전자전이에 기인하기 때문이다. 본 연구의 결과는 $SiO_2$에 대한 정확한 O K-edge XRS 스펙트럼을 계산하는데 있어 전자-정공 효과를 고려해야 한다는 사실을 보여준다. 또한, 실험적으로는 재현이 어려운 고압 환경에 존재하는 $CaCl_2$-구조를 갖는 $SiO_2$ (~63 GPa)에 대한 O K-edge XRS 스펙트럼 계산을 통해, 제1원리 계산이 고압상 물질의 물성 연구에 이용될 수 있다는 사실을 보여준다.