• Journal of the Korean Solar Energy Society
• /
• v.39 no.1
• /
• pp.11-19
• /
• 2019

Spectroscopic ellipsometry is a powerful tool for analyzing optical properties of material. Ellipsometry measurement results is usually given by change of polarization state of probe light, so the measured result should be properly treated and transformed to meaningful parameters by transformation and modeling of the measurement result. In case of hydrogenated amorphous silicon, Tauc-Lorentz dispersion is usually used to model the measured ellipsometry spectrum. In this paper, modeling of spectroscopic ellipsometry result of hydrogenated amorphous silicon using Tauc-Lorentz dispersion is discussed.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
• /
• 2002.11a
• /
• pp.3-9
• /
• 2002

Rotating compensator spectroscopic ellipsometry의 개발과 그의 응용에 대하여 연구하였다. Spectroscopic ellipsometry는 편광된 빛이 물체의 표면에서 반사된 후 빛의 편광된 상태를 넓은 파장의 영역에 걸쳐서 측정하여 그 물질의 광학적 특성을 알아 낼 수 있는 기술이다. RCSE의 경우 얇은 투명 박막에 보다 정확한 값을 줄 뿐만 아니라, 박막의 균질도를 알 수 있는 편광 정도을 측정을 할 수 있다. 본 장비의 측정 시간은 십여 초 정도이고, 분광 범위는 1.5 eV ~ 4.5 eV이다. RCSE를 이용한 박막의 광학적 물성과 두께 그리고 deep-UV용 감광제의 선폭을 측정하였다.

• Current Optics and Photonics
• /
• v.4 no.4
• /
• pp.345-352
• /
• 2020

We describe a calibration method to improve the accuracy of interferometric snapshot spectroscopic ellipsometry employing a dual-spectrometer sensor scheme. Conventional spectral wavelength calibration of a spectrometer has been performed by using a calibration lamp having multiple peaks at specific wavelength. This paper shows that such a conventional spectrometer calibration method is inappropriate for the proposed interferometric snapshot spectroscopic ellipsometry to obtain highly accurate ellipsometric phase information. And also, systematic error analysis of interferometric snapshot spectroscopic ellipsometry is conducted experimentally.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.11 no.5
• /
• pp.371-377
• /
• 1998

The plasma chemical vapor deposition is one of the most utilized techniques for the diamond growth. As the applications of diamond thin films prepared by plasma chemical vapor deposition(CVD) techniques become more demanding, improved fine-tuning and control of the process are required. The important parameters in diamond film deposition include the substrate temperature, $CO/H_2$gas flow ratio, total gas pressure, and gas excitation power. With the spectroscopic ellipsometry, the substrate temperature as well as the various parameters of the film can be determined without the physical contact and the destructiveness under the extreme environment associated with the diamond film deposition. Through this paper, the important parameters during the diamond film growth using $CO+H_2$are determined and it is shown that $sp^2$ C in the diamond film is greatly reduced.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2006.08a
• /
• pp.1715-1718
• /
• 2006

Evaluating method of the device parameters of liquid crystal display (LCD) by means of the renormalized transmission spectroscopic ellipsometry is demonstrated. Dielectric and elastic constant, threshold voltage, pretilt angle, cell gap and Anchoring strength coefficients can be evaluated from the measurement of ellipsometric parameters measured by the symmetrically oblique incidence transmission ellipsometry (SOITE). Furthermore, rapid evaluating method for rubbed polyimide film is also demonstrated.

• Korean Journal of Optics and Photonics
• /
• v.12 no.6
• /
• pp.472-478
• /
• 2001

We determined the optical constants and thickness of organic electroluminescence thin films using variable angle spectroscopic ellipsometry. Using the measured transmittance spectra and the spectroscopic ellipsomeoy data of the organic films on glass substrates in the optically transparent region, we determined the effective thickness and the refractive indices of organic thin films. Then by applying a numerical inversion method to variable angle spectro-ellipsometry data, we determined the complex refractive index at each wavelength including the optically absorbing region, as well as the thickness and surface micro-roughness of the organic thin films. The calculated transmittance spectra showed a tight agreement with the measured ones, confining the validity of the present model analysis.

• Transactions on Electrical and Electronic Materials
• /
• v.13 no.4
• /
• pp.196-199
• /
• 2012

CdS thin film was prepared on glass substrate by chemical bath deposition in an alkaline solution. The optical properties of CdS thin film were investigated using spectroscopic ellipsometry. The real (${\varepsilon}_1$) and imaginary (${\varepsilon}_2$) parts of the complex dielectric function ${\varepsilon}(E)={\varepsilon}_1(E)+i{\varepsilon}_2(E)$, the refractive index n(E), and the extinction coefficient k(E) of CdS thin film were obtained from spectroscopic ellipsometry. The normal-incidence reflectivity R(E) and absorption coefficient ${\alpha}(E)$ of CdS thin film were obtained using the refractive index and extinction coefficient. The critical points $E_0$ and $E_1$ of CdS thin film were shown in spectra of the dielectric function and optical constants of refractive index, extinction coefficient, normal-incidence reflectivity, and absorption coefficient. The dispersion of refractive index was analyzed by the Wemple-DiDomenico single-oscillator model.

• Bulletin of the Korean Chemical Society
• /
• v.26 no.6
• /
• pp.947-951
• /
• 2005

Rotating compensator multichannel spectroscopic ellipsometry has been employed to determine the optical functions of various liquids used in chemistry. We attempted three different measurement configurations: (1) air-liquid interface, (2) prism-liquid interface, and (3) liquid-sample interface. In prism-liquid interface, we found that the prism surface had roughness and it should be considered in analysis for accurate results. In liquidsample interface, we had much higher reflection, better sensitivity, and less limitation compared to the other two configurations when crystalline silicon was used as reference sample. We discuss the merit of each configuration and present the optical functions of various liquids. Also we demonstrate Bruggeman effective medium theory to determine the optical properties of mixed liquid.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
• /
• 2004.05a
• /
• pp.169-173
• /
• 2004

Rotating Compensator Ellipsometry에 회전하는 시편 홀더를 갖추었을 때 uniaxial한 시편의 광축과 retardance를 측정하는 것이 매우 간단해진다. 이것은 Dual Rotating Compensator Transmission Ellipsometry의 self-calibration과정과 흡사하기 때문이다. 기존의 ellipsometry가 광학 부품들의 입사면에 대한 방위각을 찾는 복잡한 calibration과정과 비등방성 시편의 고속축의 방향을 찾아야 하는 수고를 필요로 하지만 rotating sample and compensator ellipsometry는 self-calibration과 자동으로 고속축의 방향을 찾기 때문에 매우 편리하다. 우리는 이 기술를 정렬된 액정display panel에 적용하여 ~$0.4^{\circ}$ 의 작은 retardance 간을 측정할 수 있었다.

• 한국신재생에너지학회:학술대회논문집
• /
• 2008.05a
• /
• pp.378-381
• /
• 2008

고효율 a-Si:H/c-Si 이종접합 태양전지를 얻기 위해서는 우수한 c-Si wafer 위에 고품질의 비정질 실리콘박막을 통한 heterointerface를 형성하는 것이 매우 중요하다. 이를 달성하기 위해서는 공정중에 오염되기 쉬운 Si wafer 표면 상태를 정확히 검사하고 잘 관리하여야 한다. 본 연구에서는 세정 및 표면산화에 따른 Si wafer 상태를 Spectroscopic Ellipsometry 및 u-PCD를 이용하여 분석하였으며, <$\varepsilon$2> @4.25eV 값이 Si wafer 상태를 잘 나타내고 있음을 확인하였고 세정 최적화 할 경우 그 값이 43.02에 도달하였다. 또한 RF-PECVD로 증착된a-Si:H 박막을 EMA 모델링을 통해 분석한 결과 낮은 결정성과 높은 밀도를 가지는 a-Si:H를 얻을 수 있었으며, 이를 이종접합 태양전지에 적용한 결과 Flat wafer상에서 10.88%, textured wafer 적용하여 13.23%의 변환효율을 얻었다. 결론적으로 Spectroscopic Ellipsometry가 매우 얇고 고품질의 다층 박막이 필요한 이종접합 태양전지 분석에 있어 매우 유용한 방법임이 확인되었다.