• 한국재료학회:학술대회논문집
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• 한국재료학회 1992년도 춘계학술발표회
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• pp.76-77
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• 1992

• 한국광학회:학술대회논문집
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• 한국광학회 2004년도 하계학술발표회
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• pp.226-227
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• 2004

• 한국진공학회:학술대회논문집
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• 한국진공학회 2006년도 제30회 학술논문발표회 초록집
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• pp.183-183
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• 2006

• 한국광학회:학술대회논문집
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• 한국광학회 1997년도 Advance Program of 14th optics andquantum Electronics conference, 1997제14 회 광학 및 양자전자 학술 발표회 논문 요약집
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• pp.16-16
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• 1997

• 반도체디스플레이기술학회지
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• 제17권3호
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• pp.70-74
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• 2018

In typical spectroscopic ellipsometry, the optical and geometrical properties of thin film and nano pattern can be obtained by measuring the polarization state of light reflected/transmitted from the object by rotating a analyzer or a compensator. We proposed a snapshot spectroscopic ellipsometric system based on a modified Michelson interferometer to overcome the time-consuring measurement principle due to rotating part. The proposed system provides spectral ellipsometric parameters (psi, delta) in real time by using a single spectral interference signal generated in the interferometric polarization module. However, it has a long-term stability problem resulting in delta(k) drift. In this paper, it is experimentally proved that the drift problem is caused by anisotropic refractive index change of the beam intersection layer in beam splitter of interferometer.

• 한국광학회지
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• 제8권4호
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• pp.277-282
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• 1997

광학소자나 전자소자의 코팅에 많이 이용되고 있는 Diamond-like Carbon(DLC) 박막의 복소굴절율을 광학적 방법을 사용하여 구하였다. PECVD(Plasma enhanced CVD)법에 의해 Si(100)기판과 비정질실리카 기판위에 각각 성장시킨 DLC 박막을 분광타원해석기와 분광광도계를 이용하여 타원해석 스펙트럼과 광투과율 스펙트럼을 측정하고, Sellmeier 분산관계식과 양자역학적 진동자 모델을 이용하여 분석하였다. 비정질실리카 위에 증착된 DLC 박막의 광투과영역에서 분광타원해석분석으로 굴절률 및 박막의 유효두께를 구하고 광흡수영역에서 투과스펙트럼을 역방계산하여 소광계수를 구한 뒤, 이 소광계수 스펙트럼에 최적 근사하는 양자역학적 분산식의 계수들을 회귀분석법으로 결정하여 복소굴절율을 구하였다. 그리고 모델링방법을 타워해석 스펙트럼에 적용하여 Si기판과 비정질이산화규소 기판위에 증착된 DLC 박막의 조밀도, 표면거칠기 등 박막상수를 박막의 성장조건에 따라 분석하였다.

• 신재생에너지
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• 제4권2호
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• pp.68-73
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• 2008

It is very important that constitution of good hetero-junction interface with a high quality amorphous silicon thin films on very cleaned c-Si wafer for making high efficiency hetero-junction solar cells. For achieving the high efficiency solar cells, the inspection and management of c-Si wafer surface conditions are essential subjects. In this experiment, we analyzed the c-Si wafer surface very sensitively using Spectroscopic Ellipsometer for < ${\varepsilon}2$ > and u-PCD for effective carrier life time, so we accomplished < ${\varepsilon}2$ > value 43.02 at 4.25eV by optimizing the cleaning process which is representative of c-Si wafer surface conditions very well. We carried out that the deposition of high quality hydrogenated silicon amorphous thin films by RF-PECVD systems having high density and low crystallinity which are results of effective medium approximation modeling and fitting using spectroscopic ellipsometer. We reached the cell efficiency 12.67% and 14.30% on flat and textured CZ c-Si wafer each under AM1.5G irradiation, adopting the optimized cleaning and deposition conditions that we made. As a result, we confirmed that spectroscopic ellipsometry is very useful analyzing methode for hetero-junction solar cells which need to very thin and high quality multi layer structure.

• 한국전기전자재료학회논문지
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• 제23권3호
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• pp.228-233
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• 2010

We studied the optical characteristics correlated with low dielectric constants of low-k SiOCH thin films through ellipsometry. The low-k SiOCH thin films were prepared by CCP-PECVD method using BTMSM(Bis-trimethylsilylmethane) precursors deposited on p-Si wafer. The Si-O-CHx, Si-O-Si, Si-CHx, CHx and Si-H bonding groups were specified by FTIR spectroscopic spectra, and the groups coupled with the nano-porous structural organic/inorganic hybrid-type of SiOCH thin films which has extremely low dielectric constant close to 2.0. The structural groups includes highly dense pore as well as ions in SiOCH thin films affecting to complex refraction characteristics of single layer on the p-Si wafer. The structural complexity originate the complex refractive constants of the films, and resulted the elliptical polarization of the incident linearly polarized light source of Xe-light source in the range from 190 nm to 2100 nm. Phase difference and amplitude ratio between s wave and p wave propagating through SiOCH thin film was studied. After annealing, the amplitude of p wave was reduced more than s wave, and phase difference between p and s wave was also reduced.

• Journal of the Optical Society of Korea
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• 제18권4호
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• pp.350-358
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• 2014

The collapse of Langmuir monolayers of arachidic acid (AA) on water at various rates of molecular area compression has been investigated in situ by imaging ellipsometry (IE). The thickness of the collapsed AA molecules, which are inherently inhomogeneous, was determined by IE with a spatial resolution of a few microns. For the analysis, we determined the dielectric function of AA monolayers from 380 to 1690 nm by conventional spectroscopic ellipsometry. Compression rates ranged from 0.23 to $0.94{\AA}^2/min$. A change of multilayer domains was observed in the in situ IE images. Lower compression rates resulted in more uniform collapsed films. Our experimental results correspond with previous theoretical simulations.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제36회 동계학술대회 초록집
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• pp.156-156
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• 2009