• Journal of the Semiconductor & Display Technology
• /
• v.2 no.2
• /
• pp.1-4
• /
• 2003

We have developed a rotating compensator spectroscopic ellipsometer (RCSE). As the ellipsometry measures a change in the polarization state of a light wave upon non-normal reflection from surface, the degree of sensitivity is enhanced greatly through the detection of relative phase change. RCSE acquires additional information from the non-ideal surface of sample and operates over the photon energy range from 1.5 to 4.5 eV. We applied RCSE to measure the optical properties of films and the line-width of patterned PR films on crystalline silicon.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.8 no.2
• /
• pp.240-248
• /
• 1998

The plasma chemical vapor deposition is one of the most utilized techniques for the diamond growth. As the applications of diamond thin films prepared by plasma chemical vapor deposition(CVD) techniques become more demanding, improved fine-tuning and control of the process are required. The important parameters in diamond film deposition include the substrate temperature, $CH_4/H_2$ gas flow ratio, total, gas pressure, and gas excitation power. With the spectroscopic ellipsometry, the substrate temperature as well as the various parameters of the film can be determined without the physical contact and the destructiveness under the extreme environment associated with the diamond film deposition. It is introduced how the real-time spectroscopic ellipsometry is used and the data are analyzed with the view of getting the growth condition and the accompanied features for a good quality of diamond films. And it is determined the important parameters during the diamond film growth, which include the final sample will be measured with Raman spectroscopy to confirm the diamond component included in the film.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2005.07a
• /
• pp.191-194
• /
• 2005

Evaluating methods of the polar and/or azimuthal anchoring strength coefficients by means of the renormalized transmission spectroscopic ellipsometry are demonstrated. The Anchoring strength coefficients can be evaluated from the measurement of ellipsometric parameters measured by the oblique incident transmission ellipsometry, where the effect of multiplebeam interference is eliminated. The device parameters such as the pretilt angle and cell gap can be determined simultaneously even in the case of the twisted nematic liquid crystal sample cells.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2009.10a
• /
• pp.250-253
• /
• 2009

Effective methods for monitoring the quality of polycrystalline silicon (poly-Si) films are discussed. Raman spectroscopy is typically used to determine crystallinity of poly-Si, but this method has limitations for data gathering on large substrates for mass production of poly-Si TFT backplanes. Spectroscopic ellipsometry is proposed as an alternative for fast and simple estimation of poly-Si quality on large substrates. By using both ellipsometry and Raman spectroscopy, it is possible to determine whether the quality and uniformity of the poly-Si films meet the criteria required for mass production of TFT backplanes for AMOLED panels.

• Korean Journal of Optics and Photonics
• /
• v.14 no.3
• /
• pp.272-278
• /
• 2003

We studied patterned ITO layers of PDP thin films on glass substrates using spectroscopic ellipsometry. The optical property of ITO is expressed with the optical model based on two Lorentz oscillators. The effect of patterned ITO is calculated by taking the weighted average of reflectance in proportion to ITO coverage. The relative coverage of ITO is determined by using the model analysis of spectroellipsometric data. The difference of ITO coverage obtained by the best-fit model analysis of ellipsometric spectra to the expected one is critically examined and suggestions are made to minimize the observed discrepancy.

• Korean Journal of Optics and Photonics
• /
• v.1 no.1
• /
• pp.73-86
• /
• 1990

The technique of Spectroscopic Ellipsometry (SE) has been examined with emphasis on its inherent sensitivity to the existence of thin films or surface equivalents. A brief review of related theories like the Fresnel reflection coefficients, the effect of a multilayer upon reflectivities, together with the validity of the effective medium theory and the modelling procedure, is followed by a short description of the experimental setup of a rotating polarizer type SE as well as the necessful expressions which lead to tan and cos. Out of its numerous, successful applications, a few are exampled to convince a reader that SE can be applied to a variety of research fields related to surface, interface and thin films. Specifically, those are adsorption and/or desorption on metals or semiconductors, oxidation process, formation of passivation layers on an electrode, thickness determination, interface between semiconductor and its oxide, semiconductor heterojunctions, surface microroughness, void distribution of dielectric, optical thin films, depth profile of multilayered samples, in-situ or in-vitro characterization of a solid surface immersed in electrolyte during electrochemical, chemical, or biological treatments, and so on. It is expected that the potential capability of SE will be widely utilized in a very near future, taking advantage of its sensitivity to thin films or surface equivalents, and its nondestructive, nonperturbing characteristics.

• Journal of the Semiconductor & Display Technology
• /
• v.3 no.1
• /
• pp.31-34
• /
• 2004

We develop Mueller-matrix spectroscopic ellipsometry based on dual compensator configuration. This technique is very powerful for measuring surface anisotropy in nano-scale, especially when materials show depolarization. Dual-rotating compensator configuration is adopted with the rotational ratio of 5:3 originally developed by Collins et al[1]. The instrument can provide 250-point spectra over the wavelength range from 230 nm to 820 nm in one irradiance waveform with minimum acquisition time of Tc=10 s. In this work, the results obtained in transmission modes are presented for the initial attempt. We present calibration procedures to diagnose the system from the utilized data collected in transmission mode without sample. We expect that the instrument will have important applications in thin films and surfaces that have anisotropy and inhomogeneity.

• Proceedings of the Optical Society of Korea Conference
• /
• 2001.02a
• /
• pp.256-259
• /
• 2001

Rotating-compensator type ellipsometer was developed for spectroscopic measurements. For accurate data reduction, the azimuths of transmission axises of polarizer and analyzer, and the angular position of the fast axis of compensator should be determined through calibration process. In this paper, we present various calibration methods.

• Proceedings of the Korean Vacuum Society Conference
• /
• 1997.07a
• /
• pp.152-153
• /
• 1997

• Proceedings of the Optical Society of Korea Conference
• /
• 2001.08a
• /
• pp.46-47
• /
• 2001