• 생물정신의학
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• 제10권2호
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• pp.168-176
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• 2003

Objectives:We investigated the characteristics of P300 generators in obsessive-compulsive disorder(OCD) patients by using voxel-based statistical parametric mapping of current density images. Methods:P300 generators, produced by a rare target tone of 1500Hz under a frequent non-target tone of 1,000Hz, were measured in 15 right-handed OCD patients and 15 controls. Low Resolution Electromagnetic Tomography(LORETA), using a realistic head model of the boundary element method based on individual MRI, was applied to the 128-channel EEG. Statistical parametric mapping(SPM) was applied for the statistical analysis. Results:We found that both groups had the mean current density of P300 in the parietal, temporal and prefrontal lobe. There was a trend for decreased current density in the prefrontal area in OCD patients. The statistical comparison showed current density increase in the supraparietal area, a statistically significant longer P300 latency and a trend for reduced P300 amplitude in OCD patients. Conclusion:It suggests that P300 source of both groups exists in multiple brain regions at the same time. And both groups had no statistically significant differences in the current density of P300 except for increased current density in the supraparietal area in OCD patients. But, considering the statistically significant longer P300 latency, a trend for reduced P300 amplitude and relative mean current density reduction in the prefrontal area in OCD patients, this study suggests that the frontal lobe may have a reduced normal inhibitory process in OCD patients.

• 한국정밀공학회지
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• 제18권12호
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• pp.73-81
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• 2001

The MIAB welding uses a rotating arc as its heat source and is known as an efficient method fur pipe butt welding. The arc is rotated around the weld line by the electro-magnetic force resulting from the interaction of arc current and magnetic field. The electro-magnetic force is affected by magnetic flux density, arc current, and arc length. Especially, the magnetic flux density is an important factor on arc rotation and weld quality. This paper presents a 2D finite element model for the analysis of magnetic flux density in the actual welding conditions. The magnetic flux density is mainly dependent on gap between two pipes, the position of coil from gap center, exciting current, and relative permeability. Thus, the relations between magnetic flux density and main factors were investigated through experiment and analysis. Experiments were performed for the steel pipes(48.1mm O.D and 2.0mm thickness). The analysis results of magnetic flux density reveal that it increases with increasing exciting current, increasing relative permeability, decreasing distance from gap center to coil, and decreasing gap size. It is considered that the results of this study can be used as important data on the design of coil system and MIAB welding system.

• Transactions on Electrical and Electronic Materials
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• 제6권3호
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• pp.115-118
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• 2005

Organic photovoltaic properties were studied in $CuPc/C_{60}$ and $ZnPc/C_{60}$ heterojunction structure by varying the organic layer thicknesses. Current density-voltage characteristics of organic photovoltaic cells were measured using Keithley 236 source-measure unit and a 500 W xenon lamp (ORIEL 66021) for a light source. From the analyses of current-voltage characteristics such as short-circuit current density, open-circuit voltage and power conversion efficiency, optimum thickness of the organic layer were obtained.

• Nuclear Engineering and Technology
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• 제56권1호
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• pp.70-77
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• 2024

A low energy ion irradiation system based on the deuterium arc ion source with a high perveance of 1 µP for a single extraction aperture has been successfully developed for the investigation of ion irradiation on plasma-facing components including the first mirror of plasma optical diagnostics system. Under the optimum operating condition for mirror testing, the ion source has a beam energy of 200 eV and a current density of 3.7 mA/cm². The ion source comprises a magnetic cusp-type plasma source, an extraction system, a target system with a Faraday cup, and a power supply control system to ensure stable long time operation. Operation parameters of plasma source such as pressure, filament current, and arc power with D₂ discharge gas were optimized for beam extraction by measuring plasma parameters with a Langmuir probe. The diode electrode extraction system was designed by IGUN simulation to optimize for 1 µP perveance. It was successfully demonstrated that the ion beam current of ~4 mA can be extracted through the 10 mm aperture from the developed ion source. The target system with the Faraday cup is also developed to measure the beam current. With the assistance of the power control system, ion beams are extracted while maintaining a consistent arc power for more than 10 min of continuous operation.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2010년도 추계학술대회 논문집
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• pp.539-540
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• 2010

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 춘계학술대회 논문집 전기기기 및 에너지변환시스템부문
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• pp.226-228
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• 2006

This paper presents the two lossless auxiliary inducors-assisted voltage source type half bridge(single ended push pull:SEPP) series resonant high frequency inverter for induction heated fixing roller in copy and printing machines. The simple high-frequency inverter treated here can completely achieve stable zero current soft switching (ZCS) commutation forwide its output power regulation ranges and load variations under constant high frequency pulse density modulation (PDM) scheme. Its transient and steady state operatprinciple is originally described and discussed for a constant high-frequency PDM control strategy under a stable ZCS operation commutation, together with its output effective power regulation charactertics-based on the high frequency PDM strategy. The experimenoperating performances of this voltage source SEPP ZCS-PDM series resonant high frequency inverter using IGBTs are illustrated as compared with computer simulation results and experimenones. Its power losses analysis and actual efficiency are evaluated and discussed on the basis of simulation and experimental results. The feasible effectiveness of this high frequency inverter appliimplemented here is proved from the practical point of view.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 추계종합학술대회 논문집
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• pp.573-576
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• 1998

In this paper, we analyzed electric field density and plasma condition to ICP reactor geometry structure, to generate plasma, to maintain plasma uniformity of large area LCD panel in ICP reactor also, we simulated electric field density for all kind existence current (antena and plasma current) in ICP reactor to analyze plasma antena structure

• 한국안전학회지
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• 제14권3호
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• pp.134-139
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• 1999

In this study, PSII(plasma source ion implantation) was used to improve the biocompatibility of bone-anchored Ti implant. According to potentiodynamic anodic polarization test in deaerated Hank's solution, open circuit potential of ion implanted specimens were increased compare to that of unimplanted specimen ; besides, passive current density and critical anodic current density of ion implanted specimens were lower than unimplanted specimen.

• JSTS:Journal of Semiconductor Technology and Science
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• 제7권3호
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• pp.196-208
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• 2007

An analytical model is proposed for an optically controlled Metal Semiconductor Field Effect Transistor (MESFET), known as Optical Field Effect Transistor (OPFET) considering the diffusion fabrication process. The electrical parameters such as threshold voltage, drain-source current, gate capacitances and switching response have been determined for the dark and various illuminated conditions. The Photovoltaic effect due to photogenerated carriers under illumination is shown to modulate the channel cross-section, which in turn significantly changes the threshold voltage, drainsource current, the gate capacitances and the device switching speed. The threshold voltage $V_T$ is reduced under optical illumination condition, which leads the device to change the device property from enhancement mode to depletion mode depending on photon impurity flux density. The resulting I-V characteristics show that the drain-source current IDS for different gate-source voltage $V_{gs}$ is significantly increased with optical illumination for photon flux densities of ${\Phi}=10^{15}\;and\;10^{17}/cm^2s$ compared to the dark condition. Further more, the drain-source current as a function of drain-source voltage $V_{DS}$ is evaluated to find the I-V characteristics for various pinch-off voltages $V_P$ for optimization of impurity flux density $Q_{Diff}$ by diffusion process. The resulting I-V characteristics also show that the diffusion process introduces less process-induced damage compared to ion implantation, which suffers from current reduction due to a large number of defects introduced by the ion implantation process. Further the results show significant increase in gate-source capacitance $C_{gs}$ and gate-drain capacitance $C_{gd}$ for optical illuminations, where the photo-induced voltage has a significant role on gate capacitances. The switching time ${\tau}$ of the OPFET device is computed for dark and illumination conditions. The switching time ${\tau}$ is greatly reduced by optical illumination and is also a function of device active layer thickness and corresponding impurity flux density $Q_{Diff}$. Thus it is shown that the diffusion process shows great potential for improvement of optoelectronic devices in quantum efficiency and other performance areas.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.234.1-234.1
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• 2014

Many studies have been investigated on high density plasma source (Electron Cyclotron Resonance[ECR], Inductively Coupled Plasma[ICP], Helicon plasma) for large area source after It is announced that productivity of plasma process depends on plasma density. Among them, Some researchers have been studied on multiple sources In this study, we attempted to determine the possibility of multiple inductively coupled plasma (ICP), and helicon plasma sources for large-area processes. Experiments were performed with the one and two coils to measure plasma and electrical parameters, and a circuit simulation was performed to measure the current at each coil in the 2-coil experiment. Based on the result, we could determine the possibility of multiple ICP sources due to a direct change of impedance due to current and saturation of impedance due to the skin-depth effect. However, a helicon plasma source is difficult to adapt to the multiple sources due to the consistent change of real impedance due to mode transition and the low uniformity of the B-field confinement. As a result, it is expected that ICP can be adapted to multiple source for large-area processes.