• Title/Summary/Keyword: solution coating method

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Effect of HF and Plasma Treated Glass Surface on Vapor Phase-Polymerized Poly(3,4-ethylenedioxythiophene) Thin Film : Part I

  • Lee, Joonwoo;Kim, Sungsoo
    • Journal of Integrative Natural Science
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    • v.6 no.4
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    • pp.211-214
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    • 2013
  • In this study, in order to investigate how consecutive treatments of glass surface with HF acid and water vapor/Ar plasma affect the quality of 3-aminopropyltriethoxysilane self-assembled monolayer (APS-SAM), poly(3,4-ethylenedioxythiophene) (PEDOT) thin films were vapor phase-polymerized immediately after spin coating of FeCl3 and poly-urethane diol-mixed oxidant solution on the monolayer surfaces prepared at various treatment conditions. For the film characterization, various poweful tools were used, e.g., FE-SEM, an optical microscope, four point probe, and a contact angle analyzer. The characterization revealed that HF treatment is not desirable for the synthesis of a high quality PEDOT thin film via vapor phase polymerization method. Rather, sole treatment with plasma noticeably improved the quality of APS-SAM on glass surface. As a result, a highly dense and smooth PEDOT thin film was grown on uniform oxidant film-coated APS monolayer surface.

The Surface and Electrical Properties of BST Thin Films Prepared by Sol-Gel Method (Sol-Gel 방법에 의한 BST 박막의 표면 및 전기적 특성)

  • 홍경진;조재철
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.6
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    • pp.504-510
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    • 2002
  • Recently, thin film capacitors of high dielectric constant and low leakage current are applied to integrated devices. In this study, (Ba, Sr)$TiO_3$ (BST) thin films for low cost were prepared by Sol-Gel method. BST solution was spin-coated on Pt/$SiO_2$/Si substrate at 4,000 rpm for 10 seconds. Coating process was repeated 3 times and then sintered at $700^{\circ}C$ for 30 minutes. Structural and electrical characteristics of each specimen were analyzed by TG-DTA, SEM, fractal phenomenon, voltage-current and dielectric factor. Thickness of BST ceramics thin films are about 2,600~2,800 ${\AA}$ at depositing 3 times. Dielectric constant of thin films was decreased in 1 kHz~1 MHz. Dielectric constant and loss to frequency were 250 and 0.02 in $(Ba_{0.7}Sr_{0.3})TiO_3$ (BST3). Leakage current of BST3 was $10^{-9}\sim10^{-11}$/ A under 3 V.

Fabrication of ZnO Nanorod/polystyrene Nanosphere Hybrid Nanostructures by Hydrothermal Method for Energy Generation Applications (에너지 발생소자응용을 위한 수열합성법기반 ZnO 나노로드/Polystylene 하이브리드 나노구조 제조)

  • Baek, Seong-Ho;Park, Il-Kyu
    • Journal of Powder Materials
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    • v.22 no.6
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    • pp.391-395
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    • 2015
  • We report on the successful fabrication of ZnO nanorod (NR)/polystyrene (PS) nanosphere hybrid nanostructure by combining drop coating and hydrothermal methods. Especially, by adopting an atomic layer deposition method for seed layer formation, very uniform ZnO NR structure is grown on the complicated PS surfaces. By using zinc nitrate hexahydrate $[Zn(NO_3)_2{\cdot}6H_2O]$ and hexamine $[(CH_2)_6N_4]$ as sources for Zn and O in hydrothermal process, hexagonal shaped single crystal ZnO NRs are synthesized without dissolution of PS in hydrothermal solution. X-ray diffraction results show that the ZnO NRs are grown along c-axis with single crystalline structure and there is no trace of impurities or unintentionally formed intermetallic compounds. Photoluminescence spectrum measured at room temperature for the ZnO NRs on flat Si and PS show typical two emission bands, which are corresponding to the band-edge and deep level emissions in ZnO crystal. Based on these structural and optical investigations, we confirm that the ZnO NRs can be grown well even on the complicated PS surface morphology to form the chestnut-shaped hybrid nanostructures for the energy generation and storage applications.

Preparation and ferroelectric properties of the $Pb(Zr_{0.52}Ti_{0.48})O_3$ thin film by Sol-Gel method (SoI-Gel법에 의한 $Pb(Zr_{0.52}Ti_{0.48})O_3$박막의 제조 및 강유전 특성)

  • 정장호;박인길;류기원;배선기;이영희
    • Electrical & Electronic Materials
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    • v.8 no.5
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    • pp.606-610
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    • 1995
  • In this study, Pb(Z $r_{0.52}$ $Ti_{0.48}$) $O_{3}$ ceramic thin films were fabricated from an alkoxide-based by Sol-Gel method. Pb(Z $r_{0.52}$ $Ti_{0.48}$) $O_{3}$ stock solution was made and spin-coated on the Pt/ $SiO_{2}$/Si substrate at 4000[rpm] for 30[sec.]. Coated specimens were chied at 400[.deg. C] for 10[min]. The coating process was repeated 6 times and then heat-treated at 500-800[.deg. C] and 1 hour. The final thickness of the thin films were about 4800[.angs.]. The ferroelectric perovskite phases precipitated under the sintering of 700[.deg. C] for 1 hour. Pb(Z $r_{0.52}$ $Ti_{0.48}$) $O_{3}$ thin films sintered at 700[.deg. C] for 1 hour showed good dielectric and ferroelectric properties.

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Effect of nano size $Y_2O_3$ addition on the superconducting properties and microstructure of YBCO thin film prepared by TFA-MOD method. (TFA-MOD 방법에 의한 YBCO 박막제조에서 nano size $Y_2O_3$ 첨가효과)

  • Park Jin-A;Kim Byung-Joo;Hong Gye-Won;Lee Hee-Gyoun;Yoo Jai-Moo;Kim Young-Kuk
    • Progress in Superconductivity and Cryogenics
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    • v.8 no.3
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    • pp.13-17
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    • 2006
  • The effect of the addition of the nano size $Y_2O_3$ powder on the microstructurte and superconducting properties of YBCO thin film deposited on LAO single crystalline substrate by TFA-MOD method was studied. Nano size $Y_2O_3$ powder was added to the stoichiometric precursor solution with a cation ratio of Y : Ba . Cu = 1 : 2 : 3 prepared using TFA as chelating agent. Precursor solutions with and without $Y_2O_3$ addition were coated on $LaAlO_3(100)$ single crystalline substrates by dip coating method. Calcination and conversion heat treatments were performed in controlled atmosphere containing moisture Current carrying capacity(Jc) of YBCO film was enhanced about 50% by $Y_2O_3$ doping and it is thought to be due to the better connectivity of YBCO grains and/or the flux pinning by the $Y_2O_3$ particles embedded in YBCO grains.

Corrosion behaviors of Cp-Ti and Ti-6Al-4V alloys by TiN coating (TiN 코팅된 Ti 및 Ti-6Al-4V합금의 부식거동)

  • Lee, Soon-Hyun;Jung, Yoong-Hun;Choi, Han-Chul;Ko, Yeong-Mu
    • Journal of Technologic Dentistry
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    • v.30 no.1
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    • pp.25-31
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    • 2008
  • Cp-Ti and Ti-6Al-4V alloys commonly used dental implant materials, particularly for orthopaedic and osteosynthesis because of its suitable mechanical properties and excellent biocompatibility. This alloys have excellent corrosion behavior in the clinical environment. The first factor to decide the success of dental implantation is sufficient osseointegration and high corrosion resistance between on implant fixture and its surrounding bone tissue. In this study, in order to increase corrosion resistance and biocompatibility of Cp-Ti and Ti-6Al-4V alloy that surface of manufactured alloy was coated with TiN by RF-magnetron sputtering method. The electrochemical behavior of TiN coated Cp-Ti and Ti-6Al-4V alloy were investigated using potentiodynamic (EG&G Co, PARSTAT 2273. USA) and potentiostatic test (250mV) in 0.9% NaCl solution at 36.5 $\pm$ 1$^{\circ}C$. These results are as follows : 1. From the microstructure analysis, Cp-Ti showed the acicular structure of $\alpha$-phase and Ti-6Al-4V showed the micro-acicular structure of ${\alpha}+{\beta}$ phase. 2. From the potentiodynamic test, Ecorr value of Cp-Ti and Ti-6Al-4V alloys showed -702.48mV and -319.87mV, respectively. Ti-6Al-4V alloy value was higher than Cp-Ti alloy. 3. From the analysis of TiN and coated layer, TIN coated surface showed columnar structure with 800 nm thickness. 4. The corrosion resistance of TiN coated Cp-Ti and Ti-6Al-4V alloys were higher than those of the non-coated Ti alloys in 0.9% NaCl solution from potentiodynamic test, indicating better protective effect. 5. The passivation current density of TiN coated Cp-Ti and Ti-6Al-4V alloys were smaller than that of the noncoated implant fixture in 0.9% NaCl solution, indicating the good protective effect resulting from more compact and homogeneous layer formation.

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Characteristics and Deposition of CuInS2 film for thin solar cells via sol-gel method0 (Sol-gel법에 의한 박막태양전지용 CuInS2 박막의 증착과 특성)

  • Lee, Sang-Hyun;Lee, Seung-Yup;Park, Byung-Ok
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.21 no.4
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    • pp.158-163
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    • 2011
  • $CuInS_2$ thin films were prepared using a sol-gel spin-coating method. That makes large scale substrate coating, simple equipment, easy composition control available. The structural and optical properties of $CuInS_2$ thin films that include less toxic materials (S) instead of Se, tetragonal chalcopyrite structure. Copper acetate monohydrate ($Cu(CH_3COO)_2{\cdot}H2O$) and indium acetate ($In(CH_3COO)_3$) were dissolved into 2-propanol and l-propanol, respectively. The two solutions were mixed into a starting solution. The solution was dropped onto glass substrate, rotated at 3000 rpm, and dried at $300^{\circ}C$ for Cu-In as-grown films. The as-grown films were sulfurized inside a graphite container box and chalcopyrite phase of $CuInS_2$ was observed. To determine the optical properties measured optical transmittance of visible light region (380~770 nm) were less than 30 % in the overall. The XRD pattern shows that main peak was observed at Cu/In ratio 1.0 and its orientation was (112). As annealing temperature increases, the intensity of (112) plane increases. The unit cell constant are a = 5.5032 and c = 11.1064 $\AA$, and this was well matched with JCPDS card. The optical transmittance of visible region was below than 30 %.

The Effect of Mg Precursors on Optical and Structural Characteristics of Sol-Gel Processed Mg0.3Zn0.7O Thin Films (졸-겔법으로 성장시킨 Mg0.3Zn0.7O 박막의 Mg 전구체의 종류에 따른 광학적·구조적 특성에 관한 연구)

  • Yeom, Ahram;Kim, Hong Seung;Jang, Nak Won;Yun, Young;Ahn, Hyung Soo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.33 no.3
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    • pp.214-218
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    • 2020
  • In this study, MgxZn1-xO thin films, which can be applied not only to active layers of light-emitting devices (LEDs), such as UV-LEDs, but also to solar cells, high mobility field-effect transistors, and power semiconductor devices, are fabricated using the sol-gel method. ZnO and Mg0.3Zn0.7O solution synthesized by the sol-gel method and the thin film were grown by spin coating on a Si (100) substrate and sapphire substrate. The solutions are synthesized by dissolving precursor materials in 2-methoxyethanol (2-ME) solvent, and then monoethanolamine (MEA) was added to the mixed solution as a sol stabilizer. Zinc acetate dihydrate is used as a ZnO precursor, while Mg nitrate hexahydrate and Mg acetate tetrahydrate are used as an MgO precursor. Then, the optical and structural characteristics of the fabricated thin films are compared. The molar concentration of the Zn precursor in the solvent is fixed at 0.3 M, and the amount of the Mg precursor is 30% of Mg2+/Zn2+. The optical characteristics are measured using an UV-vis spectrophotometer, and the transmittance of each wavelength is measured. Structural characteristics are measured using X-ray diffraction (XRD) and transmission electron microscopy (TEM). Composition analyses are performed using energy dispersive X-ray spectroscopy (EDS). The Mg0.3Zn0.7O thin film was well formed at the ratio of the Mg precursor added regardless of the type of Mg precursor, and the c-axis of the thin film was decreased, while the band gap was increased to 3.56 eV.

Self-patterning Technique of Photosensitive La0.5Sr0.5CoO3 Electrode on Ferroelectric Sr0.9Bi2.1Ta2O9 Thin Films

  • Lim, Jong-Chun;Lim, Tae-Young;Auh, Keun-Ho;Park, Won-Kyu;Kim, Byong-Ho
    • Journal of the Korean Ceramic Society
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    • v.41 no.1
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    • pp.13-18
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    • 2004
  • $La_{0.5}Sr_{0.5}CoO_3$ (LSCO) electrodes were prepared on ferroelectric $Sr_{0.9}Bi_{2.1}Ta_2O_9$(SBT) thin films by spin coating method using photosensitive sol-gel solution. Self-patterning technique of photosensitive sol-gel solution has advantages such as simple manufacturing process compared to photoresist/dry etching process. Lanthanum(III) 2-methoxyethoxide, Stronitium diethoxide. Cobalu(II)2-methoxyethoxide were used as starting materials for LSCO electrode. UV irradiation on LSCO thin films lead to decrease solubility by M-O-M bond formation and the solubility difference allows us to obtain self-patternine. There was little composition change of the LSCO thin films between before leaching and after leaching in 2-methoxyethanol. The lowest resistivity of LSCO thin films deposited on $SiO_2$/Si substrate was $1.1{\times}10^{-2}{\Omega}cm$ when the thin film was ennealed at $740^{\circ}C$. The values of Pr/Ps and 2Pr of LSCO/SBT/Pt capacitor on the applied voltage of 5V were 0.51, 8.89 ${\mu}C/cm^2$, respectively.

Large-Scale Synthesis of Plate-Type ZnO Crystal with High Photocatalytic Activity (광촉매 활성이 우수한 판상형 ZnO 결정의 대용량 합성)

  • Kim, Da-Jung;Kim, Bo-Mi;Joe, Ara;Shim, Kyu-Dong;Han, Hyo-Won;Noh, Gyung-Hyun;Jang, Eue-Soon
    • Journal of the Korean Chemical Society
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    • v.59 no.2
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    • pp.148-155
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    • 2015
  • ZnO nanoplates were prepared by seed-mediated soft-solution process. Photocatalytic property of ZnO nanoplates was superior to that of conventional ZnO nanoparticles owing to the enhanced (0001) plane with large defect sites. In addition, we found that silica coating method could provide to reduce cytotoxicity of ZnO nanoplates. Finally, we have successfully synthesized for the first time large-scale synthesis of plate-type ZnO as few hundreds gram scale for industrial applications through controlling various reagents of growth solution.