• 제목/요약/키워드: solid dielectric

검색결과 328건 처리시간 0.027초

Dielectric Barrier Discharge for Ultraviolet Light Generation and Its Efficient Driving Inverter Circuit

  • Oleg, Kudryavtsev;Ahmed, Tarek;Nakaoka, Mutsuo
    • KIEE International Transactions on Electrophysics and Applications
    • /
    • 제4C권3호
    • /
    • pp.101-105
    • /
    • 2004
  • The efficient power MOSFET inverter applied for a simple and low cost power supply is proposed for driving the dielectric barrier discharge (DBD) lamp load. For decades, the DBD phenomenon has been used for ozone gas production in industry. In this research, the ultraviolet and visible light sources utilizing the DBD lamp is considered as the load for solid-state high frequency power supply. It is found that the simple voltage-source single-ended quasi-resonant ZVS inverter with only one active power switch could effectively drive this load with the output power up to 700 W. The pulse density modulation based control scheme for the single-ended quasi-resonant ZVS inverter using a low voltage and high current power MOSFET switching device is proposed to provide a linear power regulation characteristic in the wide range 0-100% of the full power as compared with the conventional control based Royer type parallel resonant inverter type power supplies.

고체유전체의 쌍극자분극 완화시간 측정에 의한 유전특성의 연구 (A study on the dielectric properties by measurement of relaxation time of dipole polarization in solid dielectrics)

  • 박중순;서장수;김병인;국상훈
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 1992년도 춘계학술대회 논문집
    • /
    • pp.125-129
    • /
    • 1992
  • When relaxation time will be distributed, TSC observed in the experimental procedure was analysed by using a potential model having two equilibrium positions and equations of dielectric properties was derived. Calculation of distribution was made by matrix method and compared/confirmed values obtained by TSC and alternating current which have a correspondence with each other. In this measurement, distribution of activation energy and relaxation time was determined by TSC peak at around 147k/364 of which center is 10$\^$-4/ sec/10$\^$5/ sec respectively at room temperature and also obtained dielctric loss factor at the range of 10$\^$-7/-10$\^$5/Hz. It seems that low temperature peak is local dispersion and high temperature peak have a relation to dielectric transition of the material.

  • PDF

$TiO_2$ 첨가에 따른 $Mg_4Ta_2O_9$ 세라믹스의 마이크로파 유전특성과 유전체 공진기 거동에 관한 연구 (Study on the Microwave Dielectric Properties and Dielectric Resonator Performance of the $Mg_4Ta_2O_9$ Ceramics with $TiO_2$ Addition)

  • 최의선;류기원;이영희;김재식
    • 전기학회논문지
    • /
    • 제56권4호
    • /
    • pp.756-760
    • /
    • 2007
  • The $(1-x)Mg_4Ta_2O_9-xwt%TiO_2\;(x=5\sim20)$ microwave dielectric ceramics were prepared by solid-state reaction method and sintered at $1450^{\circ}C$. According to the X-ray diffraction data, the $Mg_4Ta_2O_9-xwt%TiO_2$ ceramics had main phase of $Mg_4Ta_2O_9$ and $MgTi_2O_5$ peaks were added by increasing of $TiO_2$ addition. Microwave dielectric properties of the $Mg_4Ta_2O_9-xwt%TiO_2$ ceramics were influenced by $MgTi_2O_5$ phase and properties of $TiO_2$. There was a little decrement of the quality factor from 116,800GHz of pure $Mg_4Ta_2O_9$ to 100,100GHz of 15wt% $TiO_2$ added one. But there was excellent improvement in temperature coefficient of the resonant frequency (TCRF) by addition of 15wt% $TiO_2$. The dielectric constant quality factor and TCRF of the $Mg_4Ta_2O_9-xwt%TiO_2$ ceramics sintered at $1450^{\circ}C$ were $13.08\sim16.41,\;45,000\sim165,410GHz,\;-24.82\sim+3.88ppm/^{\circ}C$, respectively, depending on the value of x. Simulated dielectric resonator (DR) with $Mg_4Ta_2O_9-15wt%TiO_2$ ceramics had the operating frequency of 11.97GHz and $S_{2,1}$ of -35.034dB.

(1-x)Ba($Mg_{1/3}Ta_{2/3})O_3$-xBa($Co_{1/3}Nb_{2/3})O_3$(x=0.25~0.5) 세라믹스의 구조 및 마이크로파 유전특성 (The structural and Microwave Dielectric Properties of (1-x)Ba($Mg_{1/3}Ta_{2/3})O_3$-xBa($Co_{1/3}Nb_{2/3})O_3$(x=0.25~0.5) Ceramics)

  • 황태광;최의선;임인호;이영희
    • 한국전기전자재료학회논문지
    • /
    • 제14권3호
    • /
    • pp.197-201
    • /
    • 2001
  • The microwave dielectric properties of (1-x)Ba(Mg$_{1}$3/Ta$_{2}$3/)O$_3$-xBa(Co$_{1}$3/Nb$_{2}$3)O$_3$(x=0.25~0.5) ceramics depending on the Ba(Co$_{1}$3/Nb$_{2}$3/)O$_3$[BCN] contents and the possibility of application as a microwave dielectric resonator were investigated. The specimens were prepared by he conventional mixed oxide method using there sintering temperature of 1575$^{\circ}C$. It was found that Ba(Mg$_{1}$3/Ta$_{2}$3/)O$_3$[BMT] and BCN formed a solid solution with complex perovskite structure. As the mole fraction of BCN increased, dielectric constant increased while temperature coefficient of resonant frequency decreased. The highest value of quality factor, Qxf$_{0}$=138,205GHz, obtained in the sample of 0.9BMT-0.1BCN ceramics. In the range of x$\geq$0.4, the dielectric constant was about 30. The 0.55BMT-0.45BCN ceramics showed excellent microwave dielectric properties with $\varepsilon$$_{r}$=30.84, Qxf$_{0}$=75,325GHz and $\tau$$_{f}$=2.9015ppm/$^{\circ}C$.EX>.EX>.

  • PDF

Dielectric properties and microstructures of (CaxSr1-x)ZrO3 ceramics

  • Li, Yu-De;Chen, Jian-Ming;Lee, Ying-Chieh
    • Journal of Ceramic Processing Research
    • /
    • 제19권6호
    • /
    • pp.461-466
    • /
    • 2018
  • The effects of Ca/Sr ratio and the sintering temperature on the properties of $(Ca_xSr_{(1-x)})ZrO_3$ (CSZ) ceramics were investigated in this study. CSZ ceramics were prepared using solid-state reaction process, which were sintered in air at temperatures ranging from $1350^{\circ}C$ to $1450^{\circ}C$. Their structures were characterized by X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM), and Transmission Electron Microscopy (TEM). The change in Ca/Sr ratio significantly affected the crystalline phase and the dielectric properties of the $(Ca_xSr_{(1-x)})ZrO_3$ ceramics. The secondary phase, $Ca_{0.15}Zr_{0.85}O_{1.85}$, was observed and increased correspondingly with the rising of sintering temperatures. In order to understand the effects of secondary phase on the dielectric properties of CSZ ceramics, the $Ca_{0.15}Zr_{0.85}O_{1.85}$ phase was prepared individually using solidstate method. The $Ca_{0.15}Zr_{0.85}O_{1.85}$ ceramics sintered at $1500^{\circ}C$ for 2 hours possessed a dielectric constant (${\varepsilon}_r$) of 21.7, a dielectric loss ($tan{\delta}$) of $49.510^{-4}$ and an Insulation Resistance (IR) of $2.1{\times}10^{10}{\Omega}$. The ($Ca_{0.7}Sr_{0.3})ZrO_3$ ceramics exhibited the best dielectric properties, with a permittivity of 29, a dielectric loss ($tan{\delta}$) of $2.7{\times}10^{-4}$, and an Insulation Resistance (IR) of $2.6{\times}10^{12}{\Omega}$.

Effect of (Al, Nb) Co-Doping on the Complex Dielectric Properties and Electric Modulus of BaTiO3-Based Ceramics

  • Ziheng Huang;Ruifeng Niu; Depeng Wang;Weitian Wang
    • 한국재료학회지
    • /
    • 제34권7호
    • /
    • pp.321-329
    • /
    • 2024
  • In this work, a series of BaTiO3-based ceramic materials, Ba(Al0.5Nb0.5)xTi1-xO3 (x = 0, 0.04, 0.06, 0.08), were synthesized using a standard solid-state reaction technique. X-ray diffraction profiles indicated that the Al+Nb co-doping into BaTiO3 does not change the crystal structure significantly with a doping concentration up to 8 %. The doping ions exist in Al3+ and Nb5+ chemical states, as revealed by X-ray photoelectron spectroscopy. The frequency-dependent complex dielectric properties and electric modulus were studied in the temperature range of 100~380 K. A colossal dielectric permittivity (>1.5 × 104) and low dielectric loss (<0.01) were demonstrated at the optimal dopant concentration x = 0.04. The observed dielectric behavior of Ba(Al0.5Nb0.5)xTi1-xO3 ceramics can be attributed to the Universal Dielectric Response. The complex electric modulus spectra indicated the grains exhibited a significant decrease in capacitance and permittivity with increasing co-doping concentration. Our results provide insight into the roles of donor and acceptor co-doping on the properties of BaTiO3-based ceramics, which is important for dielectric and energy storage applications.

캐비티 공진기를 이용한 반고체 상태 물질의 복소 비유전율 측정 방법 (Method for Measurement of Complex Relative Permittivity of Semi-Solid Materials Using Novel Cavity Resonator Design)

  • 박래승;장지현;박병덕;김준환;박상복;정용식;천창율
    • 한국전자파학회논문지
    • /
    • 제25권8호
    • /
    • pp.872-878
    • /
    • 2014
  • 본 논문은 새로운 캐비티 공진기 구조를 이용한 반고체 상태 물질의 복소 비유전율 측정 방법을 제안하고 있다. 윗면에 개구면이 존재하고, Ground 판이 분리되어 있는 구조를 이용하여 반고체 상태 물질도 캐비티 내부에 위치할 수 있도록 했다. 공진주파수의 변화와 Critical-Points Method를 이용해 실험적으로 증류수와 0.9 % 식염수의 복소 비유전율을 측정하였으며, 측정값을 Cole-Cole Equation을 통해 이론값과 비교했다.

펄스 레이저 증착법으로 제작된 다강체 $0.7BiFeO_3-0.3BaTiO_3$ 박막의 특성 연구 (Preparation and Characterization of Multiferroic $0.7BiFeO_3-0.3BaTiO_3$ Thin Films by Pulsed Laser Deposition)

  • 김경만;;;조영걸;이희영
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2009년도 추계학술대회 논문집
    • /
    • pp.88-88
    • /
    • 2009
  • $BiFeO_3$(BFO), when forming a solid solution with $BaTiO_3$(BTO), shows structural transformations over the entire compositional range, which not only gives a way to increase structural stability and electrical resistivity but also applies a means to have better ferromagnetic ordering. In this respect, we have prepared and studied 0.7BFO-0.3BTO thin films on $Pt(111)/TiO_2/SiO_2/Si$ substrates by pulsed laser deposition. Various deposition parameters, such as deposition temperature and oxygen pressure, have been optimized to get better quality films. Based on the X-ray diffraction results, thin films were successfully deposited at the temperature of $600^{\circ}C$ and an oxygen partial pressure of 10mTorr. The dielectric, ferroelectric, and magnetic properties have then been characterized. It was found that the films deposited under lower oxygen pressure corresponded to lower leakage current. Magnetism measurement showed an induced ferromagnetism. The microstructures associated with. the magnetic and dielectric properties of this mixed-perovskite solid solutions were observed by transmission electron. microscopy, which revealed the existence of complicated ferroelectric domains, suggested that the weak spontaneous magnetization was closely associated with the decrease in the extent of rhombohedral distortion by a partial substitution of $BaTiO_3$ for $BiFeO_3$.

  • PDF